CN106252187B - 在带电粒子显微镜中分析样品表面改性的方法 - Google Patents
在带电粒子显微镜中分析样品表面改性的方法 Download PDFInfo
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- CN106252187B CN106252187B CN201610400193.9A CN201610400193A CN106252187B CN 106252187 B CN106252187 B CN 106252187B CN 201610400193 A CN201610400193 A CN 201610400193A CN 106252187 B CN106252187 B CN 106252187B
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- 230000004048 modification Effects 0.000 title claims abstract description 67
- 238000012986 modification Methods 0.000 title claims abstract description 67
- 238000000034 method Methods 0.000 title claims abstract description 59
- 239000002245 particle Substances 0.000 title claims abstract description 34
- 239000000463 material Substances 0.000 claims abstract description 27
- 230000008569 process Effects 0.000 claims abstract description 17
- 230000008021 deposition Effects 0.000 claims abstract description 15
- 230000005855 radiation Effects 0.000 claims abstract description 15
- 238000003384 imaging method Methods 0.000 claims abstract description 14
- 230000004044 response Effects 0.000 claims abstract description 8
- 230000004907 flux Effects 0.000 claims abstract description 6
- 238000005286 illumination Methods 0.000 claims abstract description 4
- 238000011524 similarity measure Methods 0.000 claims abstract 3
- 238000005530 etching Methods 0.000 claims description 8
- 238000011065 in-situ storage Methods 0.000 claims description 7
- 230000008859 change Effects 0.000 claims description 5
- 238000005520 cutting process Methods 0.000 claims description 5
- 238000003801 milling Methods 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims 1
- 150000002500 ions Chemical class 0.000 description 13
- 238000000151 deposition Methods 0.000 description 10
- 238000010894 electron beam technology Methods 0.000 description 7
- 230000004075 alteration Effects 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
- 238000001888 ion beam-induced deposition Methods 0.000 description 5
- 239000000654 additive Substances 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 4
- 210000004556 brain Anatomy 0.000 description 4
- 238000011066 ex-situ storage Methods 0.000 description 4
- 238000010884 ion-beam technique Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000010606 normalization Methods 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000005430 electron energy loss spectroscopy Methods 0.000 description 3
- 238000000313 electron-beam-induced deposition Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000011835 investigation Methods 0.000 description 3
- 230000033001 locomotion Effects 0.000 description 3
- 238000000386 microscopy Methods 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- 241000252073 Anguilliformes Species 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000005315 distribution function Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001493 electron microscopy Methods 0.000 description 2
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 230000000116 mitigating effect Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000004611 spectroscopical analysis Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- -1 Ga ions or He ions) Chemical class 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ZVLDJSZFKQJMKD-UHFFFAOYSA-N [Li].[Si] Chemical compound [Li].[Si] ZVLDJSZFKQJMKD-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000005136 cathodoluminescence Methods 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000013213 extrapolation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000000829 induction skull melting Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000005332 obsidian Substances 0.000 description 1
- 238000003909 pattern recognition Methods 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000013139 quantization Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 238000001350 scanning transmission electron microscopy Methods 0.000 description 1
- 239000011163 secondary particle Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000003319 supportive effect Effects 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
- H01J37/3005—Observing the objects or the point of impact on the object
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/261—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/206—Modifying objects while observing
- H01J2237/2067—Surface alteration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/22—Treatment of data
- H01J2237/221—Image processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/24495—Signal processing, e.g. mixing of two or more signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
- H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP15171227.0 | 2015-06-09 | ||
| EP15171227.0A EP3104155A1 (en) | 2015-06-09 | 2015-06-09 | Method of analyzing surface modification of a specimen in a charged-particle microscope |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106252187A CN106252187A (zh) | 2016-12-21 |
| CN106252187B true CN106252187B (zh) | 2020-12-01 |
Family
ID=53365913
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610400193.9A Active CN106252187B (zh) | 2015-06-09 | 2016-06-08 | 在带电粒子显微镜中分析样品表面改性的方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US10115561B2 (enExample) |
| EP (2) | EP3104155A1 (enExample) |
| JP (1) | JP6692217B2 (enExample) |
| CN (1) | CN106252187B (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3249676B1 (en) * | 2016-05-27 | 2018-10-03 | FEI Company | Dual-beam charged-particle microscope with in situ deposition functionality |
| EP3518270A1 (en) * | 2018-01-25 | 2019-07-31 | FEI Company | Innovative imaging technique in transmission charged particle microscopy |
| CN110415203A (zh) * | 2018-04-26 | 2019-11-05 | 比亚迪股份有限公司 | 图片检测方法、装置和电子设备 |
| EP3591685A1 (en) * | 2018-07-06 | 2020-01-08 | FEI Company | Electron microscope with improved imaging resolution |
| DE102018120630B3 (de) * | 2018-08-23 | 2019-10-31 | Carl Zeiss Microscopy Gmbh | Verfahren zum Bearbeiten eines Objekts und Programm zur Steuerung eines Partikelstrahlsystems |
| EP3647763B1 (en) * | 2018-10-29 | 2021-07-14 | FEI Company | A method of preparing a biological sample for study in an analysis device |
| DE102019210452A1 (de) * | 2019-07-16 | 2021-01-21 | Carl Zeiss Microscopy Gmbh | Verfahren und Vorrichtung zum Erfassen von Volumeninformationen dreidimensionaler Proben |
| US10921268B1 (en) * | 2019-09-09 | 2021-02-16 | Fei Company | Methods and devices for preparing sample for cryogenic electron microscopy |
| SE543979C2 (en) * | 2019-09-20 | 2021-10-12 | Metso Outotec Finland Oy | Mining Equipment Inspection System, Mining Equipment Inspection Method, and Mining Equipment Inspection Device |
| US20210374467A1 (en) * | 2020-05-29 | 2021-12-02 | Fei Company | Correlated slice and view image annotation for machine learning |
| US11282670B1 (en) * | 2020-12-29 | 2022-03-22 | Fei Company | Slice depth reconstruction of charged particle images using model simulation for improved generation of 3D sample images |
| EP4024039B1 (en) * | 2020-12-30 | 2023-10-25 | FEI Company | Data acquisition and processing techniques for three-dimensional reconstruction |
| DE102021124099B4 (de) * | 2021-09-17 | 2023-09-28 | Carl Zeiss Multisem Gmbh | Verfahren zum Betreiben eines Vielstrahl-Teilchenmikroskops in einem Kontrast-Betriebsmodus mit defokussierter Strahlführung, Computerprogramprodukt und Vielstrahlteilchenmikroskop |
| DE102021214447A1 (de) * | 2021-12-15 | 2023-06-15 | Carl Zeiss Smt Gmbh | Elektronenmikroskop zum Untersuchen einer Probe |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6175417B1 (en) * | 1998-02-13 | 2001-01-16 | Micron Technology, Inc. | Method and apparatus for detecting defects in the manufacture of an electronic device |
| CN103839743A (zh) * | 2012-11-27 | 2014-06-04 | Fei公司 | 采样样本和显示获得的信息的方法 |
| CN104217910A (zh) * | 2013-04-25 | 2014-12-17 | Fei公司 | 在透射电子显微镜中使用相位片的方法 |
| EP2869328A1 (en) * | 2013-10-29 | 2015-05-06 | Fei Company | Differential imaging with pattern recognition for process automation of cross sectioning applications |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP3648384B2 (ja) * | 1998-07-03 | 2005-05-18 | 株式会社日立製作所 | 集束イオンビーム加工方法及び加工装置 |
| US6399944B1 (en) | 1999-07-09 | 2002-06-04 | Fei Company | Measurement of film thickness by inelastic electron scattering |
| US6322672B1 (en) | 2000-03-10 | 2001-11-27 | Fei Company | Method and apparatus for milling copper interconnects in a charged particle beam system |
| EP1419418A4 (en) | 2001-07-27 | 2006-11-29 | Fei Co | ELECTRON BEAM PROCESSING |
| US20040121069A1 (en) | 2002-08-08 | 2004-06-24 | Ferranti David C. | Repairing defects on photomasks using a charged particle beam and topographical data from a scanning probe microscope |
| US7388218B2 (en) | 2005-04-04 | 2008-06-17 | Fei Company | Subsurface imaging using an electron beam |
| US7670956B2 (en) | 2005-04-08 | 2010-03-02 | Fei Company | Beam-induced etching |
| US7476858B2 (en) | 2005-10-26 | 2009-01-13 | Aspex Corporation | Particle detection auditing system and method |
| CN102149509B (zh) | 2008-07-09 | 2014-08-20 | Fei公司 | 用于激光加工的方法和设备 |
| CN102394209B (zh) | 2008-10-31 | 2015-01-14 | Fei公司 | 样本厚度的测量和终点确定 |
| WO2011127327A2 (en) | 2010-04-07 | 2011-10-13 | Fei Company | Combination laser and charged particle beam system |
| JP5764380B2 (ja) | 2010-04-29 | 2015-08-19 | エフ イー アイ カンパニFei Company | Sem画像化法 |
| EP2707893B1 (en) * | 2011-05-13 | 2019-01-16 | Fibics Incorporated | Microscopy imaging method and system |
| WO2014014446A1 (en) * | 2012-07-16 | 2014-01-23 | Fei Company | Endpointing for focused ion beam processing |
| US10465293B2 (en) * | 2012-08-31 | 2019-11-05 | Fei Company | Dose-based end-pointing for low-kV FIB milling TEM sample preparation |
| DE102012217761B4 (de) * | 2012-09-28 | 2020-02-06 | Carl Zeiss Microscopy Gmbh | Verfahren zur Vermeidung von Artefakten beim Serial Block Face Imaging |
| EP2824445B1 (en) | 2013-07-08 | 2016-03-02 | Fei Company | Charged-particle microscopy combined with raman spectroscopy |
| EP2838107B1 (en) * | 2013-08-14 | 2016-06-01 | Fei Company | Circuit probe for charged particle beam system |
| EP2963672A1 (en) | 2014-06-30 | 2016-01-06 | FEI Company | Computational scanning microscopy with improved resolution |
| US9601303B2 (en) * | 2015-08-12 | 2017-03-21 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Charged particle beam device and method for inspecting and/or imaging a sample |
-
2015
- 2015-06-09 EP EP15171227.0A patent/EP3104155A1/en not_active Withdrawn
-
2016
- 2016-06-01 EP EP16172498.4A patent/EP3104392A1/en not_active Withdrawn
- 2016-06-08 CN CN201610400193.9A patent/CN106252187B/zh active Active
- 2016-06-08 US US15/177,242 patent/US10115561B2/en active Active
- 2016-06-08 JP JP2016114894A patent/JP6692217B2/ja active Active
-
2018
- 2018-10-09 US US16/155,297 patent/US10811223B2/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6175417B1 (en) * | 1998-02-13 | 2001-01-16 | Micron Technology, Inc. | Method and apparatus for detecting defects in the manufacture of an electronic device |
| CN103839743A (zh) * | 2012-11-27 | 2014-06-04 | Fei公司 | 采样样本和显示获得的信息的方法 |
| CN104217910A (zh) * | 2013-04-25 | 2014-12-17 | Fei公司 | 在透射电子显微镜中使用相位片的方法 |
| EP2869328A1 (en) * | 2013-10-29 | 2015-05-06 | Fei Company | Differential imaging with pattern recognition for process automation of cross sectioning applications |
Also Published As
| Publication number | Publication date |
|---|---|
| EP3104155A1 (en) | 2016-12-14 |
| JP6692217B2 (ja) | 2020-05-13 |
| US10115561B2 (en) | 2018-10-30 |
| EP3104392A1 (en) | 2016-12-14 |
| US20160365224A1 (en) | 2016-12-15 |
| US10811223B2 (en) | 2020-10-20 |
| CN106252187A (zh) | 2016-12-21 |
| US20190051492A1 (en) | 2019-02-14 |
| JP2017004948A (ja) | 2017-01-05 |
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