JP2017004948A5 - - Google Patents

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JP2017004948A5
JP2017004948A5 JP2016114894A JP2016114894A JP2017004948A5 JP 2017004948 A5 JP2017004948 A5 JP 2017004948A5 JP 2016114894 A JP2016114894 A JP 2016114894A JP 2016114894 A JP2016114894 A JP 2016114894A JP 2017004948 A5 JP2017004948 A5 JP 2017004948A5
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image
sample
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performance index
similarity
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JP2016114894A
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Japanese (ja)
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JP6692217B2 (ja
JP2017004948A (ja
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Priority claimed from EP15171227.0A external-priority patent/EP3104155A1/en
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JP2016114894A 2015-06-09 2016-06-08 荷電粒子顕微鏡において、試料の表面修正を分析する方法 Active JP6692217B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP15171227.0 2015-06-09
EP15171227.0A EP3104155A1 (en) 2015-06-09 2015-06-09 Method of analyzing surface modification of a specimen in a charged-particle microscope

Publications (3)

Publication Number Publication Date
JP2017004948A JP2017004948A (ja) 2017-01-05
JP2017004948A5 true JP2017004948A5 (enExample) 2019-07-11
JP6692217B2 JP6692217B2 (ja) 2020-05-13

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ID=53365913

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JP2016114894A Active JP6692217B2 (ja) 2015-06-09 2016-06-08 荷電粒子顕微鏡において、試料の表面修正を分析する方法

Country Status (4)

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US (2) US10115561B2 (enExample)
EP (2) EP3104155A1 (enExample)
JP (1) JP6692217B2 (enExample)
CN (1) CN106252187B (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3249676B1 (en) * 2016-05-27 2018-10-03 FEI Company Dual-beam charged-particle microscope with in situ deposition functionality
EP3518270A1 (en) * 2018-01-25 2019-07-31 FEI Company Innovative imaging technique in transmission charged particle microscopy
CN110415203A (zh) * 2018-04-26 2019-11-05 比亚迪股份有限公司 图片检测方法、装置和电子设备
EP3591685A1 (en) * 2018-07-06 2020-01-08 FEI Company Electron microscope with improved imaging resolution
DE102018120630B3 (de) * 2018-08-23 2019-10-31 Carl Zeiss Microscopy Gmbh Verfahren zum Bearbeiten eines Objekts und Programm zur Steuerung eines Partikelstrahlsystems
EP3647763B1 (en) * 2018-10-29 2021-07-14 FEI Company A method of preparing a biological sample for study in an analysis device
DE102019210452A1 (de) * 2019-07-16 2021-01-21 Carl Zeiss Microscopy Gmbh Verfahren und Vorrichtung zum Erfassen von Volumeninformationen dreidimensionaler Proben
US10921268B1 (en) * 2019-09-09 2021-02-16 Fei Company Methods and devices for preparing sample for cryogenic electron microscopy
SE543979C2 (en) * 2019-09-20 2021-10-12 Metso Outotec Finland Oy Mining Equipment Inspection System, Mining Equipment Inspection Method, and Mining Equipment Inspection Device
US20210374467A1 (en) * 2020-05-29 2021-12-02 Fei Company Correlated slice and view image annotation for machine learning
US11282670B1 (en) * 2020-12-29 2022-03-22 Fei Company Slice depth reconstruction of charged particle images using model simulation for improved generation of 3D sample images
EP4024039B1 (en) * 2020-12-30 2023-10-25 FEI Company Data acquisition and processing techniques for three-dimensional reconstruction
DE102021124099B4 (de) * 2021-09-17 2023-09-28 Carl Zeiss Multisem Gmbh Verfahren zum Betreiben eines Vielstrahl-Teilchenmikroskops in einem Kontrast-Betriebsmodus mit defokussierter Strahlführung, Computerprogramprodukt und Vielstrahlteilchenmikroskop
DE102021214447A1 (de) * 2021-12-15 2023-06-15 Carl Zeiss Smt Gmbh Elektronenmikroskop zum Untersuchen einer Probe

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6452677B1 (en) * 1998-02-13 2002-09-17 Micron Technology Inc. Method and apparatus for detecting defects in the manufacture of an electronic device
JP3648384B2 (ja) * 1998-07-03 2005-05-18 株式会社日立製作所 集束イオンビーム加工方法及び加工装置
US6399944B1 (en) 1999-07-09 2002-06-04 Fei Company Measurement of film thickness by inelastic electron scattering
US6322672B1 (en) 2000-03-10 2001-11-27 Fei Company Method and apparatus for milling copper interconnects in a charged particle beam system
EP1419418A4 (en) 2001-07-27 2006-11-29 Fei Co ELECTRON BEAM PROCESSING
US20040121069A1 (en) 2002-08-08 2004-06-24 Ferranti David C. Repairing defects on photomasks using a charged particle beam and topographical data from a scanning probe microscope
US7388218B2 (en) 2005-04-04 2008-06-17 Fei Company Subsurface imaging using an electron beam
US7670956B2 (en) 2005-04-08 2010-03-02 Fei Company Beam-induced etching
US7476858B2 (en) 2005-10-26 2009-01-13 Aspex Corporation Particle detection auditing system and method
CN102149509B (zh) 2008-07-09 2014-08-20 Fei公司 用于激光加工的方法和设备
CN102394209B (zh) 2008-10-31 2015-01-14 Fei公司 样本厚度的测量和终点确定
WO2011127327A2 (en) 2010-04-07 2011-10-13 Fei Company Combination laser and charged particle beam system
JP5764380B2 (ja) 2010-04-29 2015-08-19 エフ イー アイ カンパニＦｅｉ Ｃｏｍｐａｎｙ Ｓｅｍ画像化法
EP2707893B1 (en) * 2011-05-13 2019-01-16 Fibics Incorporated Microscopy imaging method and system
WO2014014446A1 (en) * 2012-07-16 2014-01-23 Fei Company Endpointing for focused ion beam processing
US10465293B2 (en) * 2012-08-31 2019-11-05 Fei Company Dose-based end-pointing for low-kV FIB milling TEM sample preparation
DE102012217761B4 (de) * 2012-09-28 2020-02-06 Carl Zeiss Microscopy Gmbh Verfahren zur Vermeidung von Artefakten beim Serial Block Face Imaging
EP2735866A1 (en) * 2012-11-27 2014-05-28 Fei Company Method of sampling a sample and displaying obtained information
JP6286270B2 (ja) * 2013-04-25 2018-02-28 エフ イー アイ カンパニＦｅｉ Ｃｏｍｐａｎｙ 透過型電子顕微鏡内で位相版を用いる方法
EP2824445B1 (en) 2013-07-08 2016-03-02 Fei Company Charged-particle microscopy combined with raman spectroscopy
EP2838107B1 (en) * 2013-08-14 2016-06-01 Fei Company Circuit probe for charged particle beam system
JP6556993B2 (ja) * 2013-10-29 2019-08-07 エフ・イ−・アイ・カンパニー 断面形成用途のプロセス自動化のためのパターン認識を伴う差分画像化
EP2963672A1 (en) 2014-06-30 2016-01-06 FEI Company Computational scanning microscopy with improved resolution
US9601303B2 (en) * 2015-08-12 2017-03-21 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device and method for inspecting and/or imaging a sample

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