JP6685653B2 - 固体撮像装置の製造方法 - Google Patents

固体撮像装置の製造方法 Download PDF

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Publication number
JP6685653B2
JP6685653B2 JP2015099485A JP2015099485A JP6685653B2 JP 6685653 B2 JP6685653 B2 JP 6685653B2 JP 2015099485 A JP2015099485 A JP 2015099485A JP 2015099485 A JP2015099485 A JP 2015099485A JP 6685653 B2 JP6685653 B2 JP 6685653B2
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Japan
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region
layer
film
state imaging
imaging device
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JP2015099485A
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Japanese (ja)
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JP2016219468A (ja
JP2016219468A5 (enExample
Inventor
順也 玉木
順也 玉木
敦 鹿海
敦 鹿海
北村　慎吾
慎吾 北村
剛宏 豊田
剛宏 豊田
政樹 栗原
政樹 栗原
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Canon Inc
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Canon Inc
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Priority to JP2015099485A priority Critical patent/JP6685653B2/ja
Priority to US15/149,767 priority patent/US9837463B2/en
Publication of JP2016219468A publication Critical patent/JP2016219468A/ja
Publication of JP2016219468A5 publication Critical patent/JP2016219468A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings

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  • Solid State Image Pick-Up Elements (AREA)
JP2015099485A 2015-05-14 2015-05-14 固体撮像装置の製造方法 Active JP6685653B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2015099485A JP6685653B2 (ja) 2015-05-14 2015-05-14 固体撮像装置の製造方法
US15/149,767 US9837463B2 (en) 2015-05-14 2016-05-09 Solid-state imaging device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015099485A JP6685653B2 (ja) 2015-05-14 2015-05-14 固体撮像装置の製造方法

Publications (3)

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JP2016219468A JP2016219468A (ja) 2016-12-22
JP2016219468A5 JP2016219468A5 (enExample) 2018-06-21
JP6685653B2 true JP6685653B2 (ja) 2020-04-22

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US (1) US9837463B2 (enExample)
JP (1) JP6685653B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110291636B (zh) * 2017-02-21 2023-07-18 索尼半导体解决方案公司 成像器件和电子装置
CN109524427A (zh) * 2018-10-26 2019-03-26 上海华力集成电路制造有限公司 Cis的内部透镜的制造方法
US10985199B2 (en) 2018-10-31 2021-04-20 Taiwan Semiconductor Manufacturing Company Ltd. Image sensor having stress releasing structure and method of forming same
KR102639539B1 (ko) 2018-11-05 2024-02-26 삼성전자주식회사 이미지 센서 및 이의 형성 방법
JP7301530B2 (ja) * 2018-11-30 2023-07-03 キヤノン株式会社 光学装置および機器
US20230326942A1 (en) * 2022-04-08 2023-10-12 Visera Technologies Company Limited Image sensor

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3809708B2 (ja) 1997-07-15 2006-08-16 ソニー株式会社 固体撮像素子並びにその製造方法
JP4873001B2 (ja) * 2008-12-10 2012-02-08 ソニー株式会社 固体撮像装置とその製造方法、電子機器並びに半導体装置
JP5493461B2 (ja) * 2009-05-12 2014-05-14 ソニー株式会社 固体撮像装置、電子機器及び固体撮像装置の製造方法
JP5853351B2 (ja) * 2010-03-25 2016-02-09 ソニー株式会社 半導体装置、半導体装置の製造方法、及び電子機器
JP2012182426A (ja) * 2011-02-09 2012-09-20 Canon Inc 固体撮像装置、固体撮像装置を用いた撮像システム及び固体撮像装置の製造方法

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US9837463B2 (en) 2017-12-05
JP2016219468A (ja) 2016-12-22
US20160336369A1 (en) 2016-11-17

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