JP6683503B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP6683503B2
JP6683503B2 JP2016039310A JP2016039310A JP6683503B2 JP 6683503 B2 JP6683503 B2 JP 6683503B2 JP 2016039310 A JP2016039310 A JP 2016039310A JP 2016039310 A JP2016039310 A JP 2016039310A JP 6683503 B2 JP6683503 B2 JP 6683503B2
Authority
JP
Japan
Prior art keywords
insulator
transistor
conductor
oxide
oxide layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2016039310A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016167591A5 (ja
JP2016167591A (ja
Inventor
山崎　舜平
舜平 山崎
岡崎　豊
豊 岡崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of JP2016167591A publication Critical patent/JP2016167591A/ja
Publication of JP2016167591A5 publication Critical patent/JP2016167591A5/ja
Application granted granted Critical
Publication of JP6683503B2 publication Critical patent/JP6683503B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Non-Volatile Memory (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP2016039310A 2015-03-03 2016-03-01 半導体装置 Active JP6683503B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015040858 2015-03-03
JP2015040858 2015-03-03

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2020055298A Division JP2020115556A (ja) 2015-03-03 2020-03-26 半導体装置

Publications (3)

Publication Number Publication Date
JP2016167591A JP2016167591A (ja) 2016-09-15
JP2016167591A5 JP2016167591A5 (ja) 2019-04-04
JP6683503B2 true JP6683503B2 (ja) 2020-04-22

Family

ID=56897745

Family Applications (5)

Application Number Title Priority Date Filing Date
JP2016039310A Active JP6683503B2 (ja) 2015-03-03 2016-03-01 半導体装置
JP2020055298A Withdrawn JP2020115556A (ja) 2015-03-03 2020-03-26 半導体装置
JP2022016905A Withdrawn JP2022062195A (ja) 2015-03-03 2022-02-07 半導体装置
JP2023186416A Active JP7559181B2 (ja) 2015-03-03 2023-10-31 半導体装置
JP2024161040A Pending JP2025016437A (ja) 2015-03-03 2024-09-18 半導体装置

Family Applications After (4)

Application Number Title Priority Date Filing Date
JP2020055298A Withdrawn JP2020115556A (ja) 2015-03-03 2020-03-26 半導体装置
JP2022016905A Withdrawn JP2022062195A (ja) 2015-03-03 2022-02-07 半導体装置
JP2023186416A Active JP7559181B2 (ja) 2015-03-03 2023-10-31 半導体装置
JP2024161040A Pending JP2025016437A (ja) 2015-03-03 2024-09-18 半導体装置

Country Status (1)

Country Link
JP (5) JP6683503B2 (enrdf_load_stackoverflow)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6871722B2 (ja) * 2016-11-17 2021-05-12 株式会社半導体エネルギー研究所 半導体装置
US20190348537A1 (en) * 2016-12-27 2019-11-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP2018206828A (ja) * 2017-05-31 2018-12-27 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
US11056491B2 (en) 2017-06-27 2021-07-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
WO2019025912A1 (en) * 2017-08-04 2019-02-07 Semiconductor Energy Laboratory Co., Ltd. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
KR102630641B1 (ko) 2018-01-25 2024-01-30 삼성디스플레이 주식회사 표시장치 및 그의 제조방법
KR20200138305A (ko) 2018-03-29 2020-12-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치 및 전자 기기
US11636809B2 (en) 2019-11-29 2023-04-25 Chengdu Boe Optoelectronics Technology Co., Ltd. Display substrate and display device
EP4089740A1 (en) * 2019-11-29 2022-11-16 BOE Technology Group Co., Ltd. Array substrate and manufacturing method therefor, display device and display substrate
KR20210086898A (ko) 2019-12-31 2021-07-09 삼성디스플레이 주식회사 표시 장치 및 그 제조방법
JP2023055740A (ja) * 2021-12-17 2023-04-18 株式会社半導体エネルギー研究所 剥離方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100890957B1 (ko) * 2002-12-19 2009-03-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치 및 표시장치의 제작 방법
JP5046529B2 (ja) * 2005-02-25 2012-10-10 株式会社半導体エネルギー研究所 半導体装置
JP2009238866A (ja) * 2008-03-26 2009-10-15 Fuji Electric Device Technology Co Ltd 半導体装置の製造方法
JP5460108B2 (ja) * 2008-04-18 2014-04-02 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
US8766269B2 (en) * 2009-07-02 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, lighting device, and electronic device
CN102792677B (zh) * 2010-03-08 2015-08-05 株式会社半导体能源研究所 半导体器件及其制造方法
WO2011145468A1 (en) * 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
TWI597842B (zh) * 2011-03-25 2017-09-01 半導體能源研究所股份有限公司 場效電晶體及包含該場效電晶體之記憶體與半導體電路
US9093538B2 (en) * 2011-04-08 2015-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8446171B2 (en) * 2011-04-29 2013-05-21 Semiconductor Energy Laboratory Co., Ltd. Signal processing unit
TWI556319B (zh) * 2011-11-30 2016-11-01 半導體能源研究所股份有限公司 半導體裝置的製造方法
KR102097171B1 (ko) * 2012-01-20 2020-04-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9099560B2 (en) * 2012-01-20 2015-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR102330543B1 (ko) 2012-04-13 2021-11-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6026844B2 (ja) * 2012-10-17 2016-11-16 株式会社半導体エネルギー研究所 半導体装置
KR102238682B1 (ko) * 2013-02-28 2021-04-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치와 그 제작 방법
JP6376788B2 (ja) 2013-03-26 2018-08-22 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US20150008428A1 (en) * 2013-07-08 2015-01-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP6322503B2 (ja) * 2013-07-16 2018-05-09 株式会社半導体エネルギー研究所 半導体装置
TWI632688B (zh) * 2013-07-25 2018-08-11 半導體能源研究所股份有限公司 半導體裝置以及半導體裝置的製造方法
JP2015053477A (ja) * 2013-08-05 2015-03-19 株式会社半導体エネルギー研究所 半導体装置および半導体装置の作製方法
US9443987B2 (en) * 2013-08-23 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Also Published As

Publication number Publication date
JP2022062195A (ja) 2022-04-19
JP2025016437A (ja) 2025-02-04
JP2024012439A (ja) 2024-01-30
JP7559181B2 (ja) 2024-10-01
JP2016167591A (ja) 2016-09-15
JP2020115556A (ja) 2020-07-30

Similar Documents

Publication Publication Date Title
JP7646898B2 (ja) 半導体装置
JP7059423B2 (ja) 半導体装置
JP7559181B2 (ja) 半導体装置
CN107046040B (zh) 半导体装置及电子设备
JP6894718B2 (ja) 半導体装置、電子機器、半導体ウエハ
JP6887243B2 (ja) トランジスタ、半導体装置、電子機器及び半導ウエハ
JP6969881B2 (ja) 半導体装置、及び電子機器
US10050152B2 (en) Transistor, semiconductor device, and electronic device
JP2017168838A (ja) トランジスタ、電子機器
JP2016167590A (ja) トランジスタ、トランジスタの作製方法、半導体装置および電子機器

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190219

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20190219

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20191209

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20191217

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20200128

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20200310

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20200326

R150 Certificate of patent or registration of utility model

Ref document number: 6683503

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250