JP6680790B2 - ハイブリッド型ヘテロ構造発光デバイス - Google Patents
ハイブリッド型ヘテロ構造発光デバイス Download PDFInfo
- Publication number
- JP6680790B2 JP6680790B2 JP2017538175A JP2017538175A JP6680790B2 JP 6680790 B2 JP6680790 B2 JP 6680790B2 JP 2017538175 A JP2017538175 A JP 2017538175A JP 2017538175 A JP2017538175 A JP 2017538175A JP 6680790 B2 JP6680790 B2 JP 6680790B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor material
- light emitting
- current tunneling
- active region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 claims description 197
- 239000000463 material Substances 0.000 claims description 166
- 230000005641 tunneling Effects 0.000 claims description 117
- 238000002347 injection Methods 0.000 claims description 99
- 239000007924 injection Substances 0.000 claims description 99
- 239000013078 crystal Substances 0.000 claims description 48
- 238000000034 method Methods 0.000 claims description 35
- 229910010272 inorganic material Inorganic materials 0.000 claims description 30
- 239000011147 inorganic material Substances 0.000 claims description 30
- 230000004888 barrier function Effects 0.000 claims description 23
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 150000004767 nitrides Chemical class 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 18
- 229910002704 AlGaN Inorganic materials 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 13
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 description 34
- 238000001020 plasma etching Methods 0.000 description 18
- 238000000231 atomic layer deposition Methods 0.000 description 14
- 230000008569 process Effects 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 238000012546 transfer Methods 0.000 description 11
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 125000006850 spacer group Chemical group 0.000 description 9
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000000137 annealing Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 238000009616 inductively coupled plasma Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 239000004038 photonic crystal Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 229910052752 metalloid Inorganic materials 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 3
- 229910052809 inorganic oxide Inorganic materials 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 239000000908 ammonium hydroxide Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000010023 transfer printing Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000000089 atomic force micrograph Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0083—Processes for devices with an active region comprising only II-VI compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3095—Tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
- H01L33/0016—Devices characterised by their operation having p-n or hi-lo junctions having at least two p-n junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/11—Comprising a photonic bandgap structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Description
本願は、2014年10月6日に出願された米国特許出願第14/506,975号の優先権を主張し、その全内容を引用により本明細書に援用する。
本発明は、米国空軍/空軍科学研究局(USAF/AFOSR)によって与えられたFA9550−09−1−0482の下での政府の支援によってなされた。政府は本発明に一定の権利を有する。
Si−GaNハイブリッドLEDの製造プロセスを、サファイア基板上に未ドープInGaN/GaN多重量子井戸(MQW)層及びGaN n層を成長させることから始めた。有機金属気相成長(MOCVD)システムを使用してInGaN/GaN i−n層構造を成長させた。この構造は、厚さ1.0μmの未ドープGaNバッファ層と、厚さ2μmのSiドープn−GaN(n=3×1018cm-3)と、5ペアのIn0.2Ga0.8N/GaN(2nm/8nm)MQW活性層とから構成されていた。このMQW構造は、450nm〜470nmの所望の発光波長を達成するように設計した。次に、原子層堆積(ALD)システムを使用して、電流トンネリング層としての薄い酸化アルミニウム層をMQWの上に堆積させた。この酸化物堆積に先立って、InGaN/GaN構造を希水酸化アンモニウム酸溶液(DI水:NH4OH=10:1)中に10分間浸漬し、次いで脱イオン(DI)水すすぎ液中ですすいで自然酸化物フリーの表面を得た。
Si−AlNハイブリッドLEDの製造プロセスを、AlN基板上に未ドープAlGaN/AlN多重量子井戸(MQW)層及びAlGaN n層を成長させることから始めた。c面InGaN/GaN i−n層構造は、全て、有機金属化学蒸着(MOCVD)システムを使用して成長させた。MQW構造は、厚さ400nmのAlN未ドープホモエピ層及び厚さ600nmのn型Al0.8Ga0.2N層と、厚さ2nmのAl0.65Ga0.35N量子井戸と、厚さ3nmのAlN障壁から構成された。p型Si層をAlGaN/AlN MQWトップ層上に転移印刷する前に、原子層堆積(ALD)システムを使用して電流トンネリング層としての薄い酸化アルミニウム層をMQW上に堆積させた。酸化物堆積に先立って、AlGaN/AlN構造を希水酸化アンモニウム酸溶液(DI水:NH4OH=10:1)中に10分間浸漬し、次いで脱イオン(DI)水すすぎ液中ですすいで自然酸化物フリーの表面を得た。
Si−InGaAsPハイブリッドLEDの製造プロセスを、InP基板上に未ドープInGaAsP多重量子井戸(MQW)層を成長させることから始めた。有機金属気相成長(MOCVD)システムを使用して、未ドープの厚さ7.5nmの8ペアのIn0.485Ga0.515As0.83P0.17量子井戸及びIn0.76Ga0.24As0.83P0.17障壁から構成されるInGaAsP MQWと、MQW層の下方のInP/InGaAs n型層を成長させた。MQW構造は、1550nm〜1560nmの所望の発光波長を達成するように設計した。高度にドープされたp型Si層をInGaAsP MQW上に転移印刷する前に、原子層堆積(ALD)システムを使用して電流トンネリング層としての薄い酸化アルミニウム層を堆積させた。酸化物堆積に先立って、試料を緩衝化酸化物エッチング(BOE)溶液中に1分間浸漬し、次いで脱イオン(DI)水すすぎ液中ですすいで自然酸化物フリーの表面を得た。
本発明に関連する発明の実施態様の一部を以下に示す。
[態様1]
単結晶p型ドープ半導体材料を含む正孔注入層と;
単結晶n型ドープ半導体材料を含む電子注入層と;
前記正孔注入層と前記電子注入層の間に配置された、真性半導体材料を含む発光活性領域であって、交互の障壁層と量子井戸層とを含む多重量子井戸構造を含む発光活性領域と;
前記正孔注入層と前記発光活性領域の間に前記正孔注入層及び前記発光活性領域と接触して配置された又は前記電子注入層と前記発光活性領域の間に前記電子注入層及び前記発光活性領域と接触して配置された電流トンネリング層であって、前記ドープ半導体材料のバンドギャップ及びそれが接触している真性半導体材料のバンドギャップよりも広いバンドギャップを有する無機材料を含む電流トンネリング層と;
を含み、
前記電流トンネリング層と前記ドープ半導体材料の間の界面及び前記電流トンネリング層と前記真性半導体材料の間の界面はエピタキシャル構造を有さない、発光デバイス。
[態様2]
前記無機材料が、前記ドープ半導体材料の自然酸化物でも、前記ドープ半導体材料と接触している真性半導体材料の自然酸化物でもない、態様1に記載のデバイス。
[態様3]
前記無機材料が酸化アルミニウムである、態様2に記載のデバイス。
[態様4]
前記無機材料が窒化物である、態様1に記載のデバイス。
[態様5]
前記電流トンネリング層が、前記正孔注入層と前記発光活性領域の間に前記正孔注入層及び前記発光活性領域と接触して配置されている、態様1に記載のデバイス。
[態様6]
前記p型ドープ半導体材料がp型のIV族半導体又はIII−V族半導体である、態様5に記載のデバイス。
[態様7]
前記p型のIV族半導体がp型シリコンである、態様6に記載のデバイス。
[態様8]
前記電流トンネリング層が1つの酸化アルミニウム層である、態様7に記載のデバイス。
[態様9]
前記p型のIV族半導体がp型ゲルマニウムである、態様6に記載のデバイス。
[態様10]
前記電流トンネリング層が1つの酸化アルミニウム層である、態様9に記載のデバイス。
[態様11]
前記真性半導体材料はIII−V族半導体材料である、態様6に記載のデバイス。
[態様12]
前記障壁層がAlN層であり、前記量子井戸層がAlGaN層である、態様1に記載のデバイス。
[態様13]
前記障壁層がInP層であり、前記量子井戸層がInGaAs層である、態様1に記載のデバイス。
[態様14]
前記障壁層がGaN層であり、前記量子井戸層がInGaN層である、態様1に記載のデバイス。
[態様15]
前記デバイスが、
前記正孔注入層と前記発光活性領域の間に配置された第1の電流トンネリング層、及び
前記電子注入層と前記発光活性領域の間に前記電子注入層及び前記発光活性領域と接触して配置された第2の電流トンネリング層、
を含み、
前記第1の電流トンネリング層は、前記p型ドープ半導体材料のバンドギャップ及びそれが接触している真性半導体材料のバンドギャップよりも広いバンドギャップを有する無機材料を含み、当該第1の電流トンネリング層と前記p型ドープ半導体材料の間の界面及び当該第1の電流トンネリング層と前記真性半導体材料の間の界面がエピタキシャル構造を有さず、
前記第2の電流トンネリング層は、前記n型ドープ半導体材料のバンドギャップ及びそれが接触している真性半導体材料のバンドギャップよりも広いバンドギャップを有する無機材料を含み、当該第2の電流トンネリング層と前記n型ドープ半導体材料の間の界面及び当該第2の電流トンネリング層と前記真性半導体材料の間の界面がエピタキシャル構造を有さない、態様1に記載のデバイス。
[態様16]
前記p型ドープ半導体材料がp型ドープIV族半導体であり、前記n型ドープ半導体材料がn型ドープIV族半導体であり、前記真性半導体材料が真性III−V族半導体である、態様15に記載のデバイス。
[態様17]
前記無機材料が、前記ドープ半導体材料の自然酸化物でも、前記ドープ半導体材料と接触している真性半導体材料の自然酸化物でもない、態様16に記載の発光デバイス。
[態様18]
前記無機材料が酸化アルミニウムである、態様17に記載のデバイス。
[態様19]
前記無機材料が窒化物である、態様17に記載のデバイス。
[態様20]
発光デバイスの製造方法であって、
単結晶n型ドープ半導体材料を含む電子注入層、及び
前記電子注入層上の真性半導体材料を含む発光活性領域であって、交互の障壁層と量子井戸層とを含む多重量子井戸構造を含む発光活性領域、
を含む多層半導体ヘテロ構造を用意する工程;
前記発光活性領域上に電流トンネリング層を堆積させる工程;
単結晶p型ドープ半導体材料を含む正孔注入層を前記電流トンネリング層上に転移させる工程;及び
前記正孔注入層を前記電流トンネリング層に接合させる工程;
を含み、
前記電流トンネリング層が、前記p型ドープ半導体材料のバンドギャップ及びそれが接触している真性半導体材料のバンドギャップよりも広いバンドギャップを有する無機材料を含み、
さらに、前記電流トンネリング層と前記p型ドープ半導体材料の間の界面及び前記電流トンネリング層と前記真性半導体材料の間の界面がエピタキシャル構造を有さない、発光デバイスの製造方法。
Claims (13)
- 単結晶p型ドープシリコンを含む正孔注入層と;
単結晶n型ドープ半導体材料を含む電子注入層と;
前記正孔注入層と前記電子注入層の間に配置された、真性III族窒化物半導体材料を含む発光活性領域であって、交互の障壁層と量子井戸層とを含む多重量子井戸構造を含む発光活性領域と;
前記正孔注入層と前記発光活性領域の間に前記正孔注入層及び前記発光活性領域と接触して配置された電流トンネリング層であって、前記p型ドープシリコンのバンドギャップ及びそれが接触している真性III族窒化物半導体材料のバンドギャップよりも広いバンドギャップを有する無機材料を含む電流トンネリング層と;
を含み、
前記電流トンネリング層と前記p型ドープシリコンの間の界面及び前記電流トンネリング層と前記真性III族窒化物半導体材料の間の界面はエピタキシャル構造を有さない、発光デバイス。 - 前記無機材料が、前記p型ドープシリコンの自然酸化物でも、前記ドープ半導体材料と接触している真性III族窒化物半導体材料の自然酸化物でもない、請求項1に記載のデバイス。
- 前記無機材料が酸化アルミニウムである、請求項2に記載のデバイス。
- 前記無機材料が窒化物である、請求項1に記載のデバイス。
- 前記障壁層がAlN層であり、前記量子井戸層がAlGaN層である、請求項1に記載のデバイス。
- 前記障壁層がGaN層であり、前記量子井戸層がInGaN層である、請求項1に記載のデバイス。
- 単結晶p型ドープシリコンを含む正孔注入層と;
単結晶n型ドープ半導体材料を含む電子注入層と;
前記正孔注入層と前記電子注入層の間に配置された、真性III族窒化物半導体材料を含む発光活性領域であって、交互の障壁層と量子井戸層とを含む多重量子井戸構造を含む発光活性領域と;
前記正孔注入層と前記発光活性領域の間に配置された第1の電流トンネリング層、及び
前記電子注入層と前記発光活性領域の間に前記電子注入層及び前記発光活性領域と接触して配置された第2の電流トンネリング層と;
を含み、
前記第1の電流トンネリング層は、前記p型ドープシリコンのバンドギャップ及びそれが接触している真性III族窒化物半導体材料のバンドギャップよりも広いバンドギャップを有する無機材料を含み、当該第1の電流トンネリング層と前記p型ドープシリコンの間の界面及び当該第1の電流トンネリング層と前記真性III族窒化物半導体材料の間の界面がエピタキシャル構造を有さず、
前記第2の電流トンネリング層は、前記n型ドープ半導体材料のバンドギャップ及びそれが接触している真性半導体材料のバンドギャップよりも広いバンドギャップを有する無機材料を含み、当該第2の電流トンネリング層と前記n型ドープ半導体材料の間の界面及び当該第2の電流トンネリング層と前記真性半導体材料の間の界面がエピタキシャル構造を有さない、発光デバイス。 - 前記無機材料が、前記ドープ半導体材料の自然酸化物でも、前記ドープ半導体材料と接触している真性半導体材料の自然酸化物でもない、請求項7に記載の発光デバイス。
- 前記無機材料が酸化アルミニウムである、請求項8に記載のデバイス。
- 前記無機材料が窒化物である、請求項8に記載のデバイス。
- 発光デバイスの製造方法であって、
単結晶n型ドープ半導体材料を含む電子注入層、及び
前記電子注入層上の真性III族窒化物半導体材料を含む発光活性領域であって、交互の障壁層と量子井戸層とを含む多重量子井戸構造を含む発光活性領域、
を含む多層半導体ヘテロ構造を用意する工程;
前記発光活性領域上に電流トンネリング層を堆積させる工程;
単結晶p型ドープシリコンを含む正孔注入層を前記電流トンネリング層上に転移させる工程;及び
前記正孔注入層を前記電流トンネリング層に接合させる工程;
を含み、
前記電流トンネリング層が、前記p型ドープシリコンのバンドギャップ及びそれが接触している真性III族窒化物半導体材料のバンドギャップよりも広いバンドギャップを有する無機材料を含み、
さらに、前記電流トンネリング層と前記p型ドープシリコンの間の界面及び前記電流トンネリング層と前記真性III族窒化物半導体材料の間の界面がエピタキシャル構造を有さない、発光デバイスの製造方法。 - 前記真性半導体材料が、GaN、AlN、AlGaN、InGaN、InAlN及びAlGaInNからなる群から選ばれる、請求項1に記載の発光デバイス。
- 前記真性半導体材料が、GaN、AlN、AlGaN、InGaN、InAlN及びAlGaInNからなる群から選ばれる、請求項11に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/506,975 | 2014-10-06 | ||
US14/506,975 US9425351B2 (en) | 2014-10-06 | 2014-10-06 | Hybrid heterostructure light emitting devices |
PCT/US2015/054018 WO2016057403A1 (en) | 2014-10-06 | 2015-10-05 | Hybrid heterostructure light-emitting devices |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017531327A JP2017531327A (ja) | 2017-10-19 |
JP6680790B2 true JP6680790B2 (ja) | 2020-04-15 |
Family
ID=55653607
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017538175A Active JP6680790B2 (ja) | 2014-10-06 | 2015-10-05 | ハイブリッド型ヘテロ構造発光デバイス |
Country Status (6)
Country | Link |
---|---|
US (1) | US9425351B2 (ja) |
EP (1) | EP3204965B1 (ja) |
JP (1) | JP6680790B2 (ja) |
KR (1) | KR101995923B1 (ja) |
CN (1) | CN106688111B (ja) |
WO (1) | WO2016057403A1 (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9508891B2 (en) * | 2014-11-21 | 2016-11-29 | Epistar Corporation | Method for making light-emitting device |
US9899556B2 (en) | 2015-09-14 | 2018-02-20 | Wisconsin Alumni Research Foundation | Hybrid tandem solar cells with improved tunnel junction structures |
DE102016015056A1 (de) * | 2016-12-17 | 2018-06-21 | 3-5 Power Electronics GmbH | Herstellungsverfahren eines Schichtstapels aus einem p+-Substrat, einer p--Schicht, einer n--Schicht und einer dritten Schicht |
US10043941B1 (en) | 2017-01-31 | 2018-08-07 | International Business Machines Corporation | Light emitting diode having improved quantum efficiency at low injection current |
US10347790B2 (en) | 2017-03-24 | 2019-07-09 | Wisconsin Alumni Research Foundation | Group III-V nitride-based light emitting devices having multilayered P-type contacts |
US10217897B1 (en) * | 2017-10-06 | 2019-02-26 | Wisconsin Alumni Research Foundation | Aluminum nitride-aluminum oxide layers for enhancing the efficiency of group III-nitride light-emitting devices |
CN108233181B (zh) * | 2017-12-28 | 2019-12-24 | 南京邮电大学 | 集成谐振光栅微腔的悬空GaN薄膜激光器及其制备方法 |
US10874876B2 (en) | 2018-01-26 | 2020-12-29 | International Business Machines Corporation | Multiple light sources integrated in a neural probe for multi-wavelength activation |
US10297714B1 (en) * | 2018-04-05 | 2019-05-21 | Wisconsin Alumni Research Foundation | Heterogeneous tunneling junctions for hole injection in nitride based light-emitting devices |
US10879420B2 (en) | 2018-07-09 | 2020-12-29 | University Of Iowa Research Foundation | Cascaded superlattice LED system |
US10497817B1 (en) * | 2018-07-09 | 2019-12-03 | Wisconsin Alumni Research Foundation | P-n diodes and p-n-p heterojunction bipolar transistors with diamond collectors and current tunneling layers |
CN110767786A (zh) * | 2018-07-25 | 2020-02-07 | 隆达电子股份有限公司 | 发光二极管装置 |
CN113764554B (zh) * | 2021-07-19 | 2023-08-15 | 西安电子科技大学芜湖研究院 | 基于Si纳米线高浓度p型层的发光二极管及制备方法 |
DE102021133904A1 (de) * | 2021-12-20 | 2023-06-22 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterlaser und verfahren zur herstellung eines halbleiterlasers |
CN116469977A (zh) * | 2023-06-19 | 2023-07-21 | 江西兆驰半导体有限公司 | 一种多量子阱层及其制备方法、外延片及发光二极管 |
Family Cites Families (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4590501A (en) * | 1983-09-15 | 1986-05-20 | Codenoll Technology Corporation | Edge-emitting light emitting diode |
JPH0783027B2 (ja) * | 1986-04-30 | 1995-09-06 | 株式会社日立製作所 | 半導体装置 |
JPS63153883A (ja) * | 1986-12-17 | 1988-06-27 | Nec Corp | 量子井戸型半導体発光素子 |
NL8701497A (nl) * | 1987-06-26 | 1989-01-16 | Philips Nv | Halfgeleiderinrichting voor het opwekken van electromagnetische straling. |
JPH0467689A (ja) * | 1990-07-06 | 1992-03-03 | Hitachi Cable Ltd | トンネル接合発光素子 |
JP3868136B2 (ja) * | 1999-01-20 | 2007-01-17 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体発光素子 |
US6482711B1 (en) | 1999-10-28 | 2002-11-19 | Hrl Laboratories, Llc | InPSb/InAs BJT device and method of making |
KR100395660B1 (ko) * | 2000-11-10 | 2003-08-25 | 주식회사 옵토웰 | 터널접합층을 갖는 질화물반도체 발광소자 제조방법 |
US7030428B2 (en) | 2001-12-03 | 2006-04-18 | Cree, Inc. | Strain balanced nitride heterojunction transistors |
JP3573737B2 (ja) | 2002-01-18 | 2004-10-06 | Nec化合物デバイス株式会社 | ヘテロ接合バイポーラ・トランジスタおよび半導体集積回路 |
JP2004014587A (ja) * | 2002-06-04 | 2004-01-15 | Hitachi Cable Ltd | 窒化物系化合物半導体エピタキシャルウエハ及び発光素子 |
US7019383B2 (en) | 2003-02-26 | 2006-03-28 | Skyworks Solutions, Inc. | Gallium arsenide HBT having increased performance and method for its fabrication |
US6992337B2 (en) | 2004-04-02 | 2006-01-31 | Agilent Technologies, Inc. | Gallium arsenide antimonide (GaAsSB)/indium phosphide (InP) heterojunction bipolar transistor (HBT) having reduced tunneling probability |
KR100616596B1 (ko) * | 2004-07-09 | 2006-08-28 | 삼성전기주식회사 | 질화물 반도체 소자 및 제조방법 |
KR100664985B1 (ko) | 2004-10-26 | 2007-01-09 | 삼성전기주식회사 | 질화물계 반도체 소자 |
US7196349B2 (en) | 2005-02-17 | 2007-03-27 | Bae Systems Information And Electronic Systems Integration Inc. | Resonant cavity enhanced multi-quantum well light modulator and detector |
KR20050081207A (ko) | 2005-07-28 | 2005-08-18 | 장구현 | 터널 정션 배리어층을 사용한 단결정 질화물계 반도체 성장및 이를 이용한 고품위 질화물계 발광소자 제작 |
JP2009510763A (ja) * | 2005-09-30 | 2009-03-12 | ソウル オプト デバイス カンパニー リミテッド | 発光ダイオード |
JP2007103689A (ja) | 2005-10-05 | 2007-04-19 | Matsushita Electric Ind Co Ltd | 半導体発光装置 |
KR100794304B1 (ko) | 2005-12-16 | 2008-01-11 | 삼성전자주식회사 | 광학 소자 및 그 제조 방법 |
US7354809B2 (en) | 2006-02-13 | 2008-04-08 | Wisconsin Alumi Research Foundation | Method for double-sided processing of thin film transistors |
GB2453464B (en) | 2006-05-23 | 2011-08-31 | Univ Meijo | Light-emitting semiconductor device |
JP4962840B2 (ja) * | 2006-06-05 | 2012-06-27 | 信越半導体株式会社 | 発光素子及びその製造方法 |
US7777290B2 (en) | 2006-06-13 | 2010-08-17 | Wisconsin Alumni Research Foundation | PIN diodes for photodetection and high-speed, high-resolution image sensing |
JP5641173B2 (ja) | 2009-02-27 | 2014-12-17 | 独立行政法人理化学研究所 | 光半導体素子及びその製造方法 |
US8217410B2 (en) | 2009-03-27 | 2012-07-10 | Wisconsin Alumni Research Foundation | Hybrid vertical cavity light emitting sources |
KR101706915B1 (ko) | 2009-05-12 | 2017-02-15 | 더 보드 오브 트러스티즈 오브 더 유니버시티 오브 일리노이 | 변형가능 및 반투과 디스플레이를 위한 초박형, 미세구조 무기발광다이오드의 인쇄 어셈블리 |
US8232617B2 (en) | 2009-06-04 | 2012-07-31 | Wisconsin Alumni Research Foundation | Flexible lateral pin diodes and three-dimensional arrays and imaging devices made therefrom |
JP4686625B2 (ja) * | 2009-08-03 | 2011-05-25 | 株式会社東芝 | 半導体発光装置の製造方法 |
US20120161104A1 (en) * | 2009-08-31 | 2012-06-28 | Ushio Denki Kabushiki Kaisha | Ultraviolet irradiation device |
CN102097553A (zh) * | 2010-12-03 | 2011-06-15 | 北京工业大学 | 一种基于蓝宝石衬底的单芯片白光发光二极管 |
US9059362B2 (en) * | 2011-08-30 | 2015-06-16 | Fuji Xerox Co., Ltd. | Light emitting element, light emitting element array, optical writing head, and image forming apparatus |
US8692264B2 (en) * | 2012-03-07 | 2014-04-08 | Fuji Xerox Co., Ltd. | Light-emitting element, method of manufacturing light-emitting element, self-scanning light-emitting element array, optical writing head, and image forming apparatus |
US9705030B2 (en) | 2012-04-18 | 2017-07-11 | Technische Universität Berlin | UV LED with tunnel-injection layer |
US8866154B2 (en) | 2013-03-14 | 2014-10-21 | Wisconsin Alumni Research Foundation | Lattice mismatched heterojunction structures and devices made therefrom |
JP2015188048A (ja) * | 2014-03-10 | 2015-10-29 | 株式会社東芝 | 窒化物半導体積層体および半導体発光素子 |
-
2014
- 2014-10-06 US US14/506,975 patent/US9425351B2/en active Active
-
2015
- 2015-10-05 KR KR1020177007858A patent/KR101995923B1/ko active IP Right Grant
- 2015-10-05 EP EP15848458.4A patent/EP3204965B1/en active Active
- 2015-10-05 WO PCT/US2015/054018 patent/WO2016057403A1/en active Application Filing
- 2015-10-05 JP JP2017538175A patent/JP6680790B2/ja active Active
- 2015-10-05 CN CN201580050773.3A patent/CN106688111B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
EP3204965B1 (en) | 2020-11-25 |
US20160204306A1 (en) | 2016-07-14 |
US9425351B2 (en) | 2016-08-23 |
EP3204965A4 (en) | 2018-05-02 |
CN106688111B (zh) | 2019-07-26 |
KR20170066352A (ko) | 2017-06-14 |
EP3204965A1 (en) | 2017-08-16 |
KR101995923B1 (ko) | 2019-07-03 |
CN106688111A (zh) | 2017-05-17 |
WO2016057403A1 (en) | 2016-04-14 |
JP2017531327A (ja) | 2017-10-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6680790B2 (ja) | ハイブリッド型ヘテロ構造発光デバイス | |
KR102299465B1 (ko) | 다층 p형 접촉자를 갖는 III-V족 질화물계 발광 소자 | |
JP6484076B2 (ja) | 光デバイス | |
JP4860024B2 (ja) | InXAlYGaZN発光素子及びその製造方法 | |
JP4975204B2 (ja) | AlxGayInzN構造の組立方法 | |
US8866154B2 (en) | Lattice mismatched heterojunction structures and devices made therefrom | |
US8815618B2 (en) | Light-emitting diode on a conductive substrate | |
KR102587949B1 (ko) | 질화물 기반의 발광 장치에서 정공 주입을 위한 이종 터널링 접합 | |
CN107910750B (zh) | 一种半导体激光器材料的制备方法 | |
KR101161264B1 (ko) | 기판 재사용을 위한 반도체 소자 제조 방법 | |
US8148732B2 (en) | Carbon-containing semiconductor substrate | |
TW201413783A (zh) | 碳化矽紋層 | |
JP4834920B2 (ja) | 半導体素子の製造方法 | |
JP2006287120A (ja) | 発光素子及びその製造方法 | |
US8895328B2 (en) | Fabrication method of light-emitting device | |
JP2002261076A (ja) | 窒化物系半導体の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180711 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190604 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20190531 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190902 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200218 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200319 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6680790 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |