JP6659160B2 - 半導体素子のパワーサイクル評価試験制御装置 - Google Patents

半導体素子のパワーサイクル評価試験制御装置 Download PDF

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JP6659160B2
JP6659160B2 JP2016049120A JP2016049120A JP6659160B2 JP 6659160 B2 JP6659160 B2 JP 6659160B2 JP 2016049120 A JP2016049120 A JP 2016049120A JP 2016049120 A JP2016049120 A JP 2016049120A JP 6659160 B2 JP6659160 B2 JP 6659160B2
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temperature
heat
chip
power
power cycle
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JP2016049120A
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Japanese (ja)
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JP2017166824A (ja
JP2017166824A5 (enExample
Inventor
馬殿　進路
進路 馬殿
祐樹 奥東
祐樹 奥東
石川　裕之
裕之 石川
松村　圭
圭 松村
真嗣 高田
真嗣 高田
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication of JP2017166824A5 publication Critical patent/JP2017166824A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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  • Testing Of Individual Semiconductor Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP2016049120A 2016-03-14 2016-03-14 半導体素子のパワーサイクル評価試験制御装置 Active JP6659160B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2016049120A JP6659160B2 (ja) 2016-03-14 2016-03-14 半導体素子のパワーサイクル評価試験制御装置

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JP2016049120A JP6659160B2 (ja) 2016-03-14 2016-03-14 半導体素子のパワーサイクル評価試験制御装置

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JP2017166824A JP2017166824A (ja) 2017-09-21
JP2017166824A5 JP2017166824A5 (enExample) 2018-10-04
JP6659160B2 true JP6659160B2 (ja) 2020-03-04

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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7056318B2 (ja) * 2018-03-30 2022-04-19 日本電気株式会社 冷却評価システムおよび冷却評価方法
CN111238669B (zh) * 2018-11-29 2022-05-13 拓荆科技股份有限公司 用于半导体射频处理装置的温度测量方法
CN110502842B (zh) * 2019-08-26 2023-05-30 阳光电源股份有限公司 功率半导体模块的热模型建模方法及其应用方法和装置
KR20210133375A (ko) * 2020-04-28 2021-11-08 현대자동차주식회사 파워 모듈의 전력 반도체 소자 정션 온도 추정 방법 및 장치
CN113721122B (zh) * 2020-05-25 2024-04-05 中车永济电机有限公司 焊层寿命失效的测试方法
CN112285595B (zh) * 2020-10-15 2023-10-10 深圳市南北半导体有限责任公司 一种led灯珠的循环测试方法
CN113113370A (zh) * 2021-03-31 2021-07-13 杭州芯耘光电科技有限公司 一种双循环散热系统及其控制方法
CN114152863B (zh) * 2021-11-27 2023-12-08 北京工业大学 一种智能可控温的GaN功率循环实验装置
CN118191550B (zh) * 2024-05-15 2024-07-19 天津海瑞电子科技有限公司 功率模块循环测试方法
CN118330271A (zh) * 2024-06-14 2024-07-12 浙江杭可仪器有限公司 一种测试平台外置的igbt功率循环测试设备

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4418772B2 (ja) * 2005-04-28 2010-02-24 富士通マイクロエレクトロニクス株式会社 温度制御装置
JP4321539B2 (ja) * 2006-03-28 2009-08-26 住友電気工業株式会社 デバイス評価装置およびデバイス評価方法
JP6047474B2 (ja) * 2013-09-25 2016-12-21 エスペック株式会社 環境試験装置

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JP2017166824A (ja) 2017-09-21

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