JP6656752B2 - パッケージウェーハの加工方法 - Google Patents
パッケージウェーハの加工方法 Download PDFInfo
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- JP6656752B2 JP6656752B2 JP2016010993A JP2016010993A JP6656752B2 JP 6656752 B2 JP6656752 B2 JP 6656752B2 JP 2016010993 A JP2016010993 A JP 2016010993A JP 2016010993 A JP2016010993 A JP 2016010993A JP 6656752 B2 JP6656752 B2 JP 6656752B2
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- 238000003672 processing method Methods 0.000 title claims description 7
- 238000012545 processing Methods 0.000 claims description 102
- 239000011347 resin Substances 0.000 claims description 57
- 229920005989 resin Polymers 0.000 claims description 57
- 238000007789 sealing Methods 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 22
- 238000012937 correction Methods 0.000 claims description 16
- 230000001678 irradiating effect Effects 0.000 claims description 12
- 238000003384 imaging method Methods 0.000 claims description 10
- 230000002093 peripheral effect Effects 0.000 claims description 10
- 238000003754 machining Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 132
- 238000004140 cleaning Methods 0.000 description 7
- 239000012530 fluid Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/03—Observing, e.g. monitoring, the workpiece
- B23K26/032—Observing, e.g. monitoring, the workpiece using optical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Dicing (AREA)
- Laser Beam Processing (AREA)
Description
13 ウェーハ
13a 表面
13b 裏面
15,15c 分割予定ライン(ストリート)
15a,15a−1,15a−2 第1分割予定ライン
15b 第2分割予定ライン
17 デバイス
19,19a キーパターン
19b,19d 第1キーパターン
19c,19e 第2キーパターン
21 樹脂
23 電極
25,25a 加工溝
31 ダイシングテープ(粘着テープ)
33 フレーム
2 加工装置
4 基台
4a 突出部
6 支持構造
6a 支持アーム
8 カセットエレベータ
10 カセット
12 仮置き機構
12a,12b ガイドレール
14 搬送ユニット
16 移動機構(加工送り機構、割り出し送り機構)
18 Y軸ガイドレール
20 Y軸移動テーブル
22 Y軸ボールネジ
24 Y軸パルスモータ
26 X軸ガイドレール
28 X軸移動テーブル
30 X軸ボールネジ
32 テーブルベース
34 保持テーブル(チャックテーブル)
34a 保持面
36 クランプ
38 レーザー光線照射ユニット
40 カメラ(撮像ユニット)
42 洗浄ユニット
44 スピンナテーブル
46 噴射ノズル
48 制御ユニット
Claims (2)
- 表面に形成された交差する複数の分割予定ラインによって区画された領域にキーパターンを有するデバイスが形成され、表面の外周部を除いた領域が樹脂で封止されたパッケージウェーハを保持する回転可能な保持テーブルと、該保持テーブルに保持されたパッケージウェーハに対して吸収性を有する波長のパルスレーザー光線を照射するレーザー光線照射ユニットと、該保持テーブルと該レーザー光線照射ユニットとをX軸方向に相対的に加工送りする加工送り機構と、該保持テーブルと該レーザー光線照射ユニットとをX軸方向に垂直なY軸方向に相対的に割り出し送りする割り出し送り機構と、パッケージウェーハの加工すべき領域を撮像して検出する撮像ユニットと、各構成要素を制御する制御ユニットと、を備える加工装置を用いてパッケージウェーハを加工するパッケージウェーハの加工方法であって、
該キーパターンの位置を示すキーパターン位置情報と、該キーパターンから最寄りの該分割予定ラインまでの距離を示す距離情報と、隣接する2本の分割予定ラインの間隔を示す間隔情報と、該樹脂で封止された樹脂封止領域の位置を示す樹脂封止領域位置情報と、を該制御ユニットに登録するとともに、登録された該キーパターン位置情報、該距離情報、該間隔情報、及び該樹脂封止領域位置情報から、該樹脂封止領域より外側で露出するキーパターンである露出キーパターンの位置を該制御ユニットが割り出す登録ステップと、
該登録ステップの後、該保持テーブルに保持されたパッケージウェーハの複数の露出キーパターンを該撮像ユニットで撮像して検出し、検出された該露出キーパターンを用いて該分割予定ラインの向きを該X軸方向に平行に調整するアライメントステップと、
該アライメントステップの後、該保持テーブルに保持されたパッケージウェーハを該分割予定ラインに沿って該レーザー光線照射ユニットで加工し、パッケージウェーハに加工溝を形成する加工ステップと、を備え、
該加工ステップは、
該加工溝と、該加工溝に対応する該分割予定ラインの最寄りの該露出キーパターンと、を所定のタイミングで撮像して検出し、該加工溝から該露出キーパターンまでの距離と、該登録ステップで登録された該距離情報が示す該加工溝に対応する該分割予定ラインから最寄りの該キーパターンまでの距離と、の差をずれ量として測定するずれ量測定ステップと、
該ずれ量に応じて該割り出し送り機構の送り量を補正する補正ステップと、
該補正ステップで補正された送り量で該保持テーブルと該レーザー光線照射ユニットとを相対的に割り出し送りする割り出し送りステップと、を含むことを特徴とするパッケージウェーハの加工方法。 - 該ずれ量測定ステップでは、該樹脂に形成された該加工溝を撮像して検出することを特徴とする請求項1に記載のパッケージウェーハの加工方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016010993A JP6656752B2 (ja) | 2016-01-22 | 2016-01-22 | パッケージウェーハの加工方法 |
TW105140457A TWI697060B (zh) | 2016-01-22 | 2016-12-07 | 封裝晶圓之加工方法 |
SG10201700215TA SG10201700215TA (en) | 2016-01-22 | 2017-01-11 | Package wafer processing method |
MYPI2017700120A MY177239A (en) | 2016-01-22 | 2017-01-12 | Package wafer processing method |
US15/412,807 US9875948B2 (en) | 2016-01-22 | 2017-01-23 | Package wafer processing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016010993A JP6656752B2 (ja) | 2016-01-22 | 2016-01-22 | パッケージウェーハの加工方法 |
Publications (2)
Publication Number | Publication Date |
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JP2017130628A JP2017130628A (ja) | 2017-07-27 |
JP6656752B2 true JP6656752B2 (ja) | 2020-03-04 |
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Family Applications (1)
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JP2016010993A Active JP6656752B2 (ja) | 2016-01-22 | 2016-01-22 | パッケージウェーハの加工方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9875948B2 (ja) |
JP (1) | JP6656752B2 (ja) |
MY (1) | MY177239A (ja) |
SG (1) | SG10201700215TA (ja) |
TW (1) | TWI697060B (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20170287768A1 (en) * | 2016-03-29 | 2017-10-05 | Veeco Precision Surface Processing Llc | Apparatus and Method to Improve Plasma Dicing and Backmetal Cleaving Process |
JP6738687B2 (ja) * | 2016-08-25 | 2020-08-12 | 株式会社ディスコ | パッケージウエーハの加工方法 |
JP2018125479A (ja) * | 2017-02-03 | 2018-08-09 | 株式会社ディスコ | ウェーハの加工方法 |
KR102217780B1 (ko) | 2018-06-12 | 2021-02-19 | 피에스케이홀딩스 (주) | 정렬 장치 |
JP7208036B2 (ja) * | 2019-01-29 | 2023-01-18 | 株式会社ディスコ | ウエーハのアライメント方法 |
JP7296840B2 (ja) * | 2019-09-26 | 2023-06-23 | 株式会社ディスコ | レーザー加工方法 |
US11901232B2 (en) | 2020-06-22 | 2024-02-13 | Applied Materials, Inc. | Automatic kerf offset mapping and correction system for laser dicing |
JP7455014B2 (ja) | 2020-07-10 | 2024-03-25 | 株式会社ディスコ | 加工装置 |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP4640715B2 (ja) * | 2000-07-14 | 2011-03-02 | 株式会社ディスコ | アライメント方法及びアライメント装置 |
JP2006186263A (ja) * | 2004-12-28 | 2006-07-13 | Disco Abrasive Syst Ltd | 被加工物保持装置 |
JP2009170501A (ja) * | 2008-01-11 | 2009-07-30 | Disco Abrasive Syst Ltd | 切削装置 |
JP5171294B2 (ja) * | 2008-02-06 | 2013-03-27 | 株式会社ディスコ | レーザ加工方法 |
JP5686545B2 (ja) * | 2010-07-26 | 2015-03-18 | 株式会社ディスコ | 切削方法 |
JP5948034B2 (ja) * | 2011-09-27 | 2016-07-06 | 株式会社ディスコ | アライメント方法 |
JP5957238B2 (ja) | 2012-02-21 | 2016-07-27 | 株式会社ディスコ | 切削装置 |
US9431360B2 (en) * | 2014-05-27 | 2016-08-30 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure and manufacturing method thereof |
JP6339514B2 (ja) * | 2015-03-25 | 2018-06-06 | Towa株式会社 | 切断装置及び切断方法 |
JP6559074B2 (ja) * | 2016-01-28 | 2019-08-14 | 株式会社ディスコ | パッケージウェーハの加工方法 |
-
2016
- 2016-01-22 JP JP2016010993A patent/JP6656752B2/ja active Active
- 2016-12-07 TW TW105140457A patent/TWI697060B/zh active
-
2017
- 2017-01-11 SG SG10201700215TA patent/SG10201700215TA/en unknown
- 2017-01-12 MY MYPI2017700120A patent/MY177239A/en unknown
- 2017-01-23 US US15/412,807 patent/US9875948B2/en active Active
Also Published As
Publication number | Publication date |
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SG10201700215TA (en) | 2017-08-30 |
US20170213774A1 (en) | 2017-07-27 |
JP2017130628A (ja) | 2017-07-27 |
TWI697060B (zh) | 2020-06-21 |
MY177239A (en) | 2020-09-09 |
TW201737377A (zh) | 2017-10-16 |
US9875948B2 (en) | 2018-01-23 |
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