JP6649353B2 - 酸化物薄膜トランジスタ及びその製造方法と、これを用いた表示パネルおよび表示装置 - Google Patents
酸化物薄膜トランジスタ及びその製造方法と、これを用いた表示パネルおよび表示装置 Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims description 74
- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 239000004065 semiconductor Substances 0.000 claims description 174
- 239000010408 film Substances 0.000 claims description 110
- 229910052751 metal Inorganic materials 0.000 claims description 105
- 239000002184 metal Substances 0.000 claims description 105
- 239000004020 conductor Substances 0.000 claims description 69
- 238000000034 method Methods 0.000 claims description 43
- 238000000151 deposition Methods 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 11
- 239000011810 insulating material Substances 0.000 claims description 10
- 239000010936 titanium Substances 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- ZPZCREMGFMRIRR-UHFFFAOYSA-N molybdenum titanium Chemical compound [Ti].[Mo] ZPZCREMGFMRIRR-UHFFFAOYSA-N 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims 2
- 239000000956 alloy Substances 0.000 claims 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 230000008569 process Effects 0.000 description 23
- 239000010410 layer Substances 0.000 description 13
- 239000004973 liquid crystal related substance Substances 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 229910052738 indium Inorganic materials 0.000 description 7
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 238000006722 reduction reaction Methods 0.000 description 6
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 239000011651 chromium Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
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Description
Claims (9)
- 金属を含んだ金属絶縁膜と、
前記金属絶縁膜と隣接する結晶性酸化物半導体と、
金属からなるゲートと、
前記結晶性酸化物半導体と前記ゲートとの間に備えられるゲート絶縁膜と、
前記結晶性酸化物半導体の一側端に備えられた第1導体部と、
前記結晶性酸化物半導体の他側端に備えられた第2導体部と、
前記結晶性酸化物半導体の上に備えられ、且つ該結晶性酸化物半導体と同じ結晶性及び同じ方向性を有する補助的な結晶性酸化物半導体と
を含み、
前記結晶性酸化物半導体は前記金属絶縁膜の表面に由来する結晶性方向性を有し、
前記金属絶縁膜は、チタン(Ti)又はモリブデン-チタン合金(MoTi)合金を含む、
酸化物薄膜トランジスタ。 - 前記金属絶縁膜は、基板に備えられ、
前記結晶性酸化物半導体は、前記金属絶縁膜上に備えられ、
前記ゲート絶縁膜は、前記結晶性酸化物半導体上に備えられ、
前記ゲートは、前記ゲート絶縁膜上に備えられる
請求項1に記載の酸化物薄膜トランジスタ。 - 前記ゲートは、基板に備えられ、
前記ゲート絶縁膜は、前記ゲート上に備えられ、
前記結晶性酸化物半導体は、前記ゲート絶縁膜上に備えられ、
前記金属絶縁膜は、前記結晶性酸化物半導体上に備えられる
請求項1に記載の酸化物薄膜トランジスタ。 - 前記結晶性酸化物半導体は、一側方向に配置して方向性を有している
請求項1に記載の酸化物薄膜トランジスタ。 - ゲートパルスが供給されるゲートラインと、
データ電圧が供給されるデータラインと、
前記ゲートラインと前記データラインによって定義されるピクセルと
を含み、
前記ピクセルのそれぞれは、少なくとも1つの酸化物薄膜トランジスタであって、金属を含んだ金属絶縁膜と、前記金属絶縁膜と隣接する結晶性酸化物半導体と、金属からなるゲートと、前記結晶性酸化物半導体と前記ゲートとの間に備えられるゲート絶縁膜と、前記結晶性酸化物半導体の一側端に備えられた第1導体部と、前記結晶性酸化物半導体の他側端に備えられた第2導体部と、前記結晶性酸化物半導体の上に備えられ、且つ該結晶性酸化物半導体と同じ結晶性及び同じ方向性を有する補助的な結晶性酸化物半導体とを含み、前記結晶性酸化物半導体は前記金属絶縁膜の表面に由来する結晶性方向性を有し、前記金属絶縁膜は、チタン(Ti)又はモリブデン-チタン合金(MoTi)合金を含む酸化物薄膜トランジスタを備える、
表示パネル。 - 請求項5に記載された表示パネルと、
前記表示パネルに備えられたゲートラインにゲートパルスを供給するゲートドライバと、
前記表示パネルに備えられたデータラインにデータ電圧を供給するデータドライバと、
前記ゲートドライバと前記データドライバを制御する制御部と
を含む表示装置。 - 金属と酸化物半導体を蒸着する工程と、
前記金属とアモルファスを有する前記酸化物半導体に熱を加え、前記酸化物半導体を結晶性酸化物半導体に変換させる工程と、
前記結晶性酸化物半導体に第1電極と第2電極を接続する工程と
を含み、
前記結晶性酸化物半導体に前記第1電極と前記第2電極を接続する工程は、
前記結晶性酸化物半導体上にゲート絶縁膜物質を蒸着する工程と、
前記ゲート絶縁膜物質上にゲート物質を蒸着する工程と、
前記ゲート絶縁膜物質と前記ゲート物質をエッチングしてゲート絶縁膜とゲートを形成する工程と、
前記ゲート絶縁膜と前記ゲートをカバーするように絶縁膜を蒸着する工程と、
前記絶縁膜に、前記結晶性酸化物半導体の一側端に備えられた第1導体部を露出させる第1コンタクトホール及び前記結晶性酸化物半導体の他側端に備えられた第2導体部を露出させる第2コンタクトホールを形成する工程と、
前記絶縁膜上に、前記第1コンタクトホールを通じて前記第1導体部と接続した第1電極および前記第2コンタクトホールを通じて前記第2導体部と接続した第2電極を形成する工程と
を含む、
酸化物薄膜トランジスタの製造方法。 - 前記金属と前記酸化物半導体を蒸着する工程は、
基板に金属を蒸着させる工程と、
有機金属化学蒸着(MOCVD)方式を利用して、前記金属上に酸化物半導体を蒸着する工程と
を含む、請求項7に記載の酸化物薄膜トランジスタの製造方法。 - 前記金属と前記酸化物半導体を蒸着する工程は、
基板にゲートを蒸着させる工程と、
前記ゲートをカバーするように、ゲート絶縁膜を蒸着させる工程と、
前記ゲート絶縁膜上に有機金属化学蒸着(MOCVD)方式を利用して、前記金属上に酸化物半導体を蒸着する工程と、
前記酸化物半導体上に金属を蒸着させる工程と
を含む、請求項7に記載の酸化物薄膜トランジスタの製造方法。
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Application Number | Priority Date | Filing Date | Title |
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KR10-2016-0184468 | 2016-12-30 | ||
KR1020160184468A KR20180079086A (ko) | 2016-12-30 | 2016-12-30 | 산화물 박막트랜지스터 및 그 제조 방법과, 이를 이용한 표시패널 및 표시장치 |
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JP2018110227A JP2018110227A (ja) | 2018-07-12 |
JP6649353B2 true JP6649353B2 (ja) | 2020-02-19 |
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Country | Link |
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US (1) | US10453944B2 (ja) |
JP (1) | JP6649353B2 (ja) |
KR (1) | KR20180079086A (ja) |
CN (1) | CN108269853B (ja) |
DE (1) | DE102017130736B4 (ja) |
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CN112242406A (zh) * | 2020-10-09 | 2021-01-19 | Tcl华星光电技术有限公司 | 阵列基板及其制作方法、显示装置 |
KR20220083910A (ko) | 2020-12-11 | 2022-06-21 | 삼성디스플레이 주식회사 | 표시 장치 |
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JP2004247373A (ja) * | 2003-02-12 | 2004-09-02 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
TWI475616B (zh) | 2008-12-26 | 2015-03-01 | Semiconductor Energy Lab | 半導體裝置及其製造方法 |
KR101578694B1 (ko) * | 2009-06-02 | 2015-12-21 | 엘지디스플레이 주식회사 | 산화물 박막 트랜지스터의 제조방법 |
WO2011074407A1 (en) * | 2009-12-18 | 2011-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
CN102760697B (zh) * | 2011-04-27 | 2016-08-03 | 株式会社半导体能源研究所 | 半导体装置的制造方法 |
JP6006975B2 (ja) * | 2011-05-19 | 2016-10-12 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP4982620B1 (ja) * | 2011-07-29 | 2012-07-25 | 富士フイルム株式会社 | 電界効果型トランジスタの製造方法、並びに、電界効果型トランジスタ、表示装置、イメージセンサ及びx線センサ |
CN202423298U (zh) * | 2011-12-31 | 2012-09-05 | 京东方科技集团股份有限公司 | 一种tft、阵列基板以及显示器件 |
IN2015DN01663A (ja) * | 2012-08-03 | 2015-07-03 | Semiconductor Energy Lab | |
US9285923B2 (en) * | 2012-12-19 | 2016-03-15 | Sharp Laboratories Of America, Inc. | Touch sensitive display system |
CN105393360B (zh) * | 2013-07-16 | 2018-11-23 | 住友金属矿山株式会社 | 氧化物半导体薄膜和薄膜晶体管 |
CN104241299B (zh) * | 2014-09-02 | 2017-02-15 | 深圳市华星光电技术有限公司 | 氧化物半导体tft基板的制作方法及结构 |
US9285913B1 (en) * | 2014-12-31 | 2016-03-15 | Lg Display Co., Ltd. | Display device and driving method thereof |
KR102284296B1 (ko) * | 2015-01-13 | 2021-08-03 | 삼성디스플레이 주식회사 | 표시 장치 및 이를 이용한 표시 패널의 구동 방법 |
WO2017002672A1 (ja) * | 2015-06-29 | 2017-01-05 | シャープ株式会社 | 半導体装置およびその製造方法 |
WO2017018241A1 (ja) * | 2015-07-24 | 2017-02-02 | シャープ株式会社 | 表示装置およびその駆動方法 |
WO2017064590A1 (en) * | 2015-10-12 | 2017-04-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
CN106098560B (zh) * | 2016-06-22 | 2019-03-12 | 深圳市华星光电技术有限公司 | 顶栅型薄膜晶体管的制作方法 |
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CN108269853A (zh) | 2018-07-10 |
JP2018110227A (ja) | 2018-07-12 |
DE102017130736A1 (de) | 2018-07-05 |
US20180190798A1 (en) | 2018-07-05 |
DE102017130736B4 (de) | 2021-12-09 |
CN108269853B (zh) | 2020-12-11 |
US10453944B2 (en) | 2019-10-22 |
KR20180079086A (ko) | 2018-07-10 |
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