JP6632470B2 - カーボン膜の成膜方法および成膜装置 - Google Patents
カーボン膜の成膜方法および成膜装置 Download PDFInfo
- Publication number
- JP6632470B2 JP6632470B2 JP2016103493A JP2016103493A JP6632470B2 JP 6632470 B2 JP6632470 B2 JP 6632470B2 JP 2016103493 A JP2016103493 A JP 2016103493A JP 2016103493 A JP2016103493 A JP 2016103493A JP 6632470 B2 JP6632470 B2 JP 6632470B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- film
- boron
- forming
- carbon film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims description 103
- 229910052799 carbon Inorganic materials 0.000 title claims description 103
- 238000000034 method Methods 0.000 title claims description 56
- 239000010408 film Substances 0.000 claims description 161
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 58
- 229910052796 boron Inorganic materials 0.000 claims description 58
- 229930195733 hydrocarbon Natural products 0.000 claims description 33
- 150000002430 hydrocarbons Chemical class 0.000 claims description 33
- 239000004215 Carbon black (E152) Substances 0.000 claims description 32
- 239000010409 thin film Substances 0.000 claims description 26
- 238000000197 pyrolysis Methods 0.000 claims description 24
- 229910052736 halogen Inorganic materials 0.000 claims description 18
- 150000002367 halogens Chemical class 0.000 claims description 18
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 14
- 229910052582 BN Inorganic materials 0.000 claims description 12
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 12
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 claims description 12
- 230000007246 mechanism Effects 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 11
- 238000005121 nitriding Methods 0.000 claims description 11
- 238000002230 thermal chemical vapour deposition Methods 0.000 claims description 11
- 238000003860 storage Methods 0.000 claims description 10
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 238000011068 loading method Methods 0.000 claims description 7
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 6
- 229910000085 borane Inorganic materials 0.000 claims description 6
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 3
- 230000003247 decreasing effect Effects 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 182
- 239000010410 layer Substances 0.000 description 34
- 235000012431 wafers Nutrition 0.000 description 28
- 239000000460 chlorine Substances 0.000 description 23
- 230000008569 process Effects 0.000 description 19
- 230000015572 biosynthetic process Effects 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 5
- 229910052801 chlorine Inorganic materials 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 4
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 238000001179 sorption measurement Methods 0.000 description 4
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 3
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 3
- 239000005977 Ethylene Substances 0.000 description 3
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 3
- 229910052794 bromium Inorganic materials 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 239000011630 iodine Substances 0.000 description 3
- 229910052740 iodine Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 230000009257 reactivity Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- RRHGJUQNOFWUDK-UHFFFAOYSA-N Isoprene Chemical compound CC(=C)C=C RRHGJUQNOFWUDK-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- CFOAUMXQOCBWNJ-UHFFFAOYSA-N [B].[Si] Chemical compound [B].[Si] CFOAUMXQOCBWNJ-UHFFFAOYSA-N 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 239000011553 magnetic fluid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- MWWATHDPGQKSAR-UHFFFAOYSA-N propyne Chemical compound CC#C MWWATHDPGQKSAR-UHFFFAOYSA-N 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02269—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by thermal evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0209—Pretreatment of the material to be coated by heating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02304—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Carbon And Carbon Compounds (AREA)
- Robotics (AREA)
Description
前記シード層を形成した後、前記処理室内に、炭化水素系カーボンソースガス、および、ハロゲン元素を含み、前記炭化水素系カーボンソースガスの熱分解温度を降下させる熱分解温度降下ガスを供給し、前記炭化水素系カーボンソースガスを、その熱分解温度よりも低い温度に加熱して熱分解させ、熱CVDにより前記被処理体上にカーボン膜を成膜する工程とを有し、前記カーボン膜はアモルファスカーボン膜であり、前記ボロン系薄膜からなるシード層は、前記被処理体の前記カーボン膜の下地と熱分解温度降下ガスのハロゲン元素との反応を抑制し、前記ボロン系薄膜からなるシード層を形成する際の成膜温度は、200〜300℃であることを特徴とするカーボン膜の成膜方法を提供する。
CnH2n+2
CmH2m
CmH2m−2
の少なくとも一つの分子式で表わされる炭化水素を含むガス(ただし、nは1以上の自然数、mは2以上の自然数)を好適に用いることができる。
図1は本発明の成膜方法を実施することができる成膜装置の一例を概略的に示す断面図である。
CnH2n+2
CmH2m
CmH2m−2
の少なくとも一つの分子式で表わされる炭化水素を含むガスを挙げることができる(ただし、nは1以上の自然数、mは2以上の自然数)。
ベンゼンガス(C6H6)
が含まれていてもよい。
メタンガス(CH4)
エタンガス(C2H6)
プロパンガス(C3H8)
ブタンガス(C4H10:他の異性体も含む)
ペンタンガス(C5H12:他の異性体も含む)
などを挙げることができる。
エチレンガス(C2H4)
プロピレンガス(C3H6:他の異性体も含む)
ブチレンガス(C4H8:他の異性体も含む)
ペンテンガス(C5H10:他の異性体も含む)
などを挙げることができる。
アセチレンガス(C2H2)
プロピンガス(C3H4:他の異性体も含む)
ブタジエンガス(C4H6:他の異性体も含む)
イソプレンガス(C5H8:他の異性体も含む)
などを挙げることができる。
次に、図1の成膜装置により実施される、本発明のカーボン膜の成膜方法の一実施形態について説明する。
・ステップ2
成膜温度:200〜300℃
処理室内の圧力:0.1〜5.0Torr(13.3〜666.7Pa)
ガス流量:
ボロン膜の場合
B2H6ガス流量:100〜1000sccm(mL/min)
窒化ボロン膜の場合
B2H6ガス流量:100〜1000sccm(mL/min)
NH3ガス流量:100〜1000sccm(mL/min)
成膜温度:300〜600℃(より好ましくは350〜400℃)
処理室内の圧力:1〜100Torr(133〜13300Pa)
炭化水素系カーボンソースガス流量:100〜2000sccm(mL/min)
熱分解温度降下ガス流量:20〜200sccm(mL/min)
炭化水素系カーボンソースガス/熱分解温度降下ガス流量比(分圧比):2〜100
カーボン膜の膜厚:2.0〜500nm
・ステップ2
ボロン含有ガス:B2H6
窒化ガス:NH3
ガス流量比:B2H6/NH3=700/100sccm
成膜温度:300℃
処理室内圧力:0.5Torr(66.5Pa)
シード層の厚さ:1.0nm
炭化水素系カーボンソースガス:ブタジエン(C4H6)
熱分解温度降下ガス:Cl2
ガス流量比:C4H6/Cl2=100/50sccm
成膜温度:350℃
処理室内圧力:1.5Torr(200Pa)
カーボン膜の膜厚:100nm
以下、実験例について説明する。
ここでは、ベアシリコンウエハ上に下地として、それぞれ熱酸化膜(Th−Ox)、アモルファスシリコン膜(a−Si)、ボロンシリコン膜(BSiLT)、SiN膜(SiN)を形成し、その上にシード層として窒化ボロン膜を形成した後、炭化水素系カーボンソースガスとしてブタジエン(C4H6)を用い、熱分解温度降下ガスとしてCl2ガスを用いてアモルファスカーボン膜を成膜したサンプルA〜Dについて、テープテストによりカーボン膜の密着性を把握した。比較のために、ベアシリコンウエハ上に直接アミノシラン系ガスによるシード層を形成し、その上に同様にアモルファスカーボン膜を成膜したサンプルE、および下地としてSiO2膜を形成し、その上にアミノシラン系ガスによるシード層を形成した後、その上に同様にアモルファスカーボン膜を成膜したサンプルFについても同様にテープテストによりカーボン膜の密着性を把握した。
C4H6ガス流量:100sccm
Cl2ガス流量:50sccm
成膜温度:350℃
処理室内圧力:1.5Torr(200Pa)
膜厚:50nm
B2H6ガス流量:700sccm
NH3ガス流量:100sccm
成膜温度:300℃
処理室内圧力:0.5Torr(66.5Pa)
時間:2.5min
シード層の厚さ:1nm未満
アミノシラン系ガス:BTBAS(ビスターシャリブチルアミノシラン)
流量:100sccm
処理温度:400℃
処理室内圧力:0.1Torr(13Pa)
処理時間:5min
以上、本発明の実施形態について説明したが、この発明は、上記の実施形態に限定されることはなく、その趣旨を逸脱しない範囲で種々変形可能である。
2;シリコン酸化膜
3;アモルファスシリコン膜
4;シード層
5;カーボン膜
100;成膜装置
107;排気装置
112;ウエハボート
130;処理ガス供給機構
131a;炭化水素系カーボンソースガス供給源
131b;熱分解温度降下ガス供給源
131d;シードガス供給源
150;制御部
S;処理室
W;半導体ウエハ(被処理体)
Claims (10)
- 被処理体上にカーボン膜を成膜するカーボン膜の成膜方法であって、
被処理体を処理室内に搬入する工程と、
前記処理室内に、ボロン含有ガスを含むガスを供給し、前記被処理体の表面に、ボロン系薄膜からなるシード層を形成する工程と、
前記シード層を形成した後、前記処理室内に、炭化水素系カーボンソースガス、および、ハロゲン元素を含み、前記炭化水素系カーボンソースガスの熱分解温度を降下させる熱分解温度降下ガスを供給し、前記炭化水素系カーボンソースガスを、その熱分解温度よりも低い温度に加熱して熱分解させ、熱CVDにより前記被処理体上にカーボン膜を成膜する工程と
を有し、
前記カーボン膜はアモルファスカーボン膜であり、
前記ボロン系薄膜からなるシード層は、前記被処理体の前記カーボン膜の下地と熱分解温度降下ガスのハロゲン元素との反応を抑制し、前記ボロン系薄膜からなるシード層を形成する際の成膜温度は、200〜300℃であることを特徴とするカーボン膜の成膜方法。 - 前記シード層を構成する前記ボロン系薄膜は、ボロン膜、または化学量論組成もしくはボロンリッチの窒化ボロン膜であることを特徴とする請求項1に記載のカーボン膜の成膜方法。
- 前記ボロン系薄膜がボロン膜の場合、ボロン含有ガスを含むガスとして、ボラン系ガスおよび三塩化ボロンガスの少なくとも1種を用いることを特徴とする請求項2に記載のカーボン膜の成膜方法。
- 前記ボロン系薄膜が化学量論組成もしくはボロンリッチの窒化ボロン膜である場合、前記ボロン含有ガスを含むガスとして、ボラン系ガスおよび三塩化ボロンガスの少なくとも1種、および窒化ガスを用いることを特徴とする請求項2に記載のカーボン膜の成膜方法。
- 前記ボロン系薄膜からなるシード層の厚さは、0.5〜3.0nmであることを特徴とする請求項1から請求項4のいずれか1項に記載のカーボン膜の成膜方法。
- 前記カーボン膜を成膜する際の成膜温度は、300〜600℃であることを特徴とする請求項1から請求項5のいずれか1項に記載のカーボン膜の成膜方法。
- 前記熱分解温度降下ガスは、Cl2ガスであることを特徴とする請求項1から請求項6のいずれか1項に記載のカーボン膜の成膜方法。
- 前記炭化水素系カーボンソースガスが、
CnH2n+2
CmH2m
CmH2m−2
の少なくとも一つの分子式で表わされる炭化水素を含むガス(ただし、nは1以上の自然数、mは2以上の自然数)であることを特徴とする請求項1から請求項7のいずれか1項に記載のカーボン膜の成膜方法。 - 被処理体上に、カーボン膜を成膜する成膜装置であって、
前記カーボン膜が形成される被処理体を収容する処理室と、
前記処理室内に、処理に使用するガスを供給する処理ガス供給機構と、
前記処理室内に収容された前記被処理体を加熱する加熱装置と、
前記処理室内に被処理体を搬入する搬入機構と、
上記請求項1から請求項8のいずれか1項に記載のカーボン膜の成膜方法が実施されるように、前記処理ガス供給機構、前記加熱装置、および前記搬入機構を制御する制御部と
を具備することを特徴とするカーボン膜の成膜装置。 - コンピュータ上で動作し、カーボン膜の成膜装置を制御するためのプログラムが記憶された記憶媒体であって、前記プログラムは、実行時に、請求項1から請求項8のいずれかのカーボン膜の成膜方法が行われるように、コンピュータに前記カーボン膜の成膜装置を制御させることを特徴とする記憶媒体。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016103493A JP6632470B2 (ja) | 2016-05-24 | 2016-05-24 | カーボン膜の成膜方法および成膜装置 |
TW106116544A TWI675930B (zh) | 2016-05-24 | 2017-05-19 | 碳膜之成膜方法及成膜裝置 |
KR1020170062142A KR102120529B1 (ko) | 2016-05-24 | 2017-05-19 | 카본 막의 성막 방법, 카본 막의 성막 장치 및 기억 매체 |
US15/601,245 US11011369B2 (en) | 2016-05-24 | 2017-05-22 | Carbon film forming method, carbon film forming apparatus, and storage medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016103493A JP6632470B2 (ja) | 2016-05-24 | 2016-05-24 | カーボン膜の成膜方法および成膜装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017210640A JP2017210640A (ja) | 2017-11-30 |
JP6632470B2 true JP6632470B2 (ja) | 2020-01-22 |
Family
ID=60418174
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016103493A Active JP6632470B2 (ja) | 2016-05-24 | 2016-05-24 | カーボン膜の成膜方法および成膜装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US11011369B2 (ja) |
JP (1) | JP6632470B2 (ja) |
KR (1) | KR102120529B1 (ja) |
TW (1) | TWI675930B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11702751B2 (en) | 2019-08-15 | 2023-07-18 | Applied Materials, Inc. | Non-conformal high selectivity film for etch critical dimension control |
JP2022114918A (ja) * | 2021-01-27 | 2022-08-08 | 東京エレクトロン株式会社 | 窒化ホウ素膜の成膜方法及び成膜装置 |
CN113151801B (zh) * | 2021-03-03 | 2022-12-27 | 电子科技大学 | 一种自支撑悬浮碳膜制备方法 |
JP2022159644A (ja) | 2021-04-05 | 2022-10-18 | 東京エレクトロン株式会社 | 成膜方法及び処理装置 |
JP2023113464A (ja) | 2022-02-03 | 2023-08-16 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2569423B2 (ja) * | 1993-12-15 | 1997-01-08 | 科学技術庁無機材質研究所長 | 窒化ホウ素の気相合成法 |
JP5121090B2 (ja) | 2000-02-17 | 2013-01-16 | アプライド マテリアルズ インコーポレイテッド | アモルファスカーボン層の堆積方法 |
JP5459115B2 (ja) | 2010-07-08 | 2014-04-02 | 三菱電機株式会社 | カーボン膜成膜装置 |
JP6045975B2 (ja) * | 2012-07-09 | 2016-12-14 | 東京エレクトロン株式会社 | カーボン膜の成膜方法および成膜装置 |
KR20140114199A (ko) * | 2013-03-18 | 2014-09-26 | 삼성전자주식회사 | 이종 적층 구조체 및 그 제조방법, 및 상기 이종 적층 구조체를 구비하는 전기소자 |
TWI720106B (zh) * | 2016-01-16 | 2021-03-01 | 美商應用材料股份有限公司 | Pecvd含鎢硬遮罩膜及製造方法 |
-
2016
- 2016-05-24 JP JP2016103493A patent/JP6632470B2/ja active Active
-
2017
- 2017-05-19 KR KR1020170062142A patent/KR102120529B1/ko active IP Right Grant
- 2017-05-19 TW TW106116544A patent/TWI675930B/zh active
- 2017-05-22 US US15/601,245 patent/US11011369B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
KR102120529B1 (ko) | 2020-06-08 |
KR20170132674A (ko) | 2017-12-04 |
TW201812066A (zh) | 2018-04-01 |
US11011369B2 (en) | 2021-05-18 |
TWI675930B (zh) | 2019-11-01 |
US20170345644A1 (en) | 2017-11-30 |
JP2017210640A (ja) | 2017-11-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6632470B2 (ja) | カーボン膜の成膜方法および成膜装置 | |
KR101751599B1 (ko) | 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램 | |
JP6045975B2 (ja) | カーボン膜の成膜方法および成膜装置 | |
JP5883049B2 (ja) | 半導体装置の製造方法、基板処理装置、プログラムおよび記録媒体 | |
US8592324B2 (en) | Method for forming laminated structure including amorphous carbon film | |
JP6347705B2 (ja) | 半導体装置の製造方法、基板処理装置およびプログラム | |
JP5886366B2 (ja) | 半導体装置の製造方法、基板処理装置、プログラムおよび記録媒体 | |
JP6320129B2 (ja) | 半導体装置の製造方法、基板処理装置およびプログラム | |
TWI796256B (zh) | 基板處理方法、半導體裝置之製造方法、基板處理裝置及程式 | |
US12049694B2 (en) | Method for depositing boron nitride film and film deposition apparatus | |
JP2017212294A (ja) | カーボン膜の成膜方法および成膜装置 | |
US20230245882A1 (en) | Deposition method and deposition apparatus | |
US20220246429A1 (en) | Carbon film deposition method and deposition apparatus | |
JP2016153518A (ja) | カーボン膜の成膜方法および成膜装置 | |
US20220319843A1 (en) | Method for forming film and processing apparatus |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20181018 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20190626 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190702 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190805 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190903 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20191002 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20191112 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20191210 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6632470 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |