JP6612015B2 - Substrate processing apparatus and substrate processing method - Google Patents

Description

  Embodiments described herein relate generally to a substrate processing apparatus and a substrate processing method.

  Substrate processing apparatuses are widely used in the manufacturing process of electronic components such as semiconductors and liquid crystal panels. This substrate processing apparatus cleans the surface of a substrate to be processed such as a wafer or a liquid crystal substrate, and removes foreign matters (for example, resist, particles, metal, etc.) from the substrate surface. In this removal step, the substrate surface is cleaned using a chemical solution or physical cleaning (eg, brush, ultrasonic wave, spray, etc.) to remove foreign substances on the substrate surface (see, for example, Patent Document 1).

JP 2007-88381 A

  However, when the foreign matter is removed by the lift-off effect by the chemical solution, the substrate pattern may be thinned by the substrate etching, and material loss may occur. In addition, when foreign matter is removed by physical cleaning, damage to the pattern is likely to occur. For these reasons, the device electrical characteristics fluctuate and deteriorate, resulting in a decrease in yield.

  The problem to be solved by the present invention is to provide a substrate processing apparatus and a substrate processing method capable of improving the yield.

The substrate processing apparatus according to the embodiment
A treatment tank for storing liquid;
A substrate on which a pattern is formed on the first surface and has a light-transmitting property, a second surface facing the first surface, with the first surface closely contacting the liquid surface of the liquid in the processing tank. A holding part that holds the liquid in a state above the liquid level;
An XY axis moving mechanism that supports the processing tank and moves the processing tank in the X-axis direction and the Y-axis direction orthogonal to the X-axis direction in a horizontal plane, and the X-axis moving mechanism and the X-axis moving mechanism together with the X-axis moving mechanism. A first movement mechanism having a Z-axis movement mechanism that moves in the Z-axis direction orthogonal to the axial direction and the Y-axis direction;
A second moving mechanism that is provided on the XY axis moving mechanism, supports the holding portion, and moves the holding portion in the Z-axis direction;
An irradiation unit that irradiates the processing target substrate held by the holding unit with laser light from the second surface side, and generates bubbles in the liquid near the interface between the processing target substrate and the liquid;
When the laser beam is applied to the substrate to be processed by the irradiation unit, the first surface of the substrate to be processed is in close contact with the liquid level of the liquid in the processing bath. A fluidizing section for causing the liquid to flow and applying an external force to the bubbles on the first surface of the substrate to be processed generated by the irradiation of the laser beam;
Have

The substrate processing method according to the embodiment includes:
A substrate processing method for processing a substrate using the substrate processing apparatus described above,
The processed substrate on which the pattern has a formed light-transmitting on the first surface, the first surface is brought into close contact with the liquid surface of the liquid in the processing bath, opposite to the first surface a step of holding a state where the second surface is above the liquid surface,
To retained the processed substrate, a step to produce said second radiating the laser beam from the surface side, the bubbles in the liquid in the vicinity of the interface between the said processed substrate liquid,
Upon irradiation of the laser light to the processing object substrate, in a state that is close contact with the surface of the liquid of the first surface is the processing bath of the processing target substrate, the liquid in the processing bath Applying an external force to the bubbles on the first surface of the substrate to be processed, which is caused to flow by the laser light irradiation;
Have

The substrate processing method according to the embodiment includes:
A substrate processing method for processing a substrate using the substrate processing apparatus according to claim 1,
The processed substrate on which the pattern has a formed light-transmitting on the first surface, the first surface is brought into close contact with the liquid surface of the chemical in the processing bath, opposite to the first surface wherein Holding the second surface in a state above the liquid surface of the chemical solution;
To the processing target substrate held in intimate contact with the first surface to the liquid surface of the liquid chemical in the processing bath, a laser beam is irradiated from the second surface side opposite to the first surface, Generating bubbles in the chemical solution in the vicinity of the interface between the substrate to be treated and the chemical solution;
Upon irradiation of the laser light to the processing object substrate, under conditions which are in close contact with the liquid surface of the chemical solution of the first surface is the processing bath of the processing target substrate, the chemical solution in the processing tank Applying an external force to the bubbles on the first surface of the substrate to be processed, which is caused to flow by the laser light irradiation;
After irradiation of the laser beam, a step of replacing the chemical liquid of the processing bath in pure water,
Wherein the first surface is brought into close contact with the liquid surface of the pure water in the processing bath, said second surface facing said first surface is held in a state that is above the liquid level of the pure water to processed substrate, irradiating a laser beam from the second surface side opposite to the first surface,
Have

  According to the present invention, the yield can be improved.

It is a figure which shows schematic structure of the substrate processing apparatus which concerns on 1st Embodiment. It is a figure for demonstrating the laser focus position which concerns on 1st Embodiment. It is a figure for demonstrating the foreign material removal by the laser cleaning process which concerns on 1st Embodiment. It is a flowchart which shows the flow of the board | substrate process which concerns on 1st Embodiment. It is a figure which shows schematic structure of the substrate processing apparatus which concerns on 2nd Embodiment. It is a figure which shows schematic structure of the substrate processing apparatus which concerns on 3rd Embodiment. It is a figure which shows schematic structure of the substrate processing apparatus which concerns on 4th Embodiment. It is a figure which shows schematic structure of the substrate processing apparatus which concerns on 5th Embodiment. It is a figure which shows schematic structure of the substrate processing apparatus which concerns on 6th Embodiment.

(First embodiment)
A first embodiment will be described with reference to FIGS.

  As shown in FIG. 1, a substrate processing apparatus 1A according to the first embodiment includes a processing tank 2 that stores a chemical solution, and a first moving mechanism 3 that moves the processing tank 2 in a planar direction and a vertical direction thereof. The holding unit 4A that holds the processing target substrate W, the second moving mechanism 5 that moves the holding unit 4A in the vertical direction, the storage tank 6 that stores the chemical solution supplied to the processing tank 2, and the holding unit 4A The irradiation unit 7 that irradiates the processing target substrate W with the laser light L and the control unit 8 that controls each unit are provided.

  The processing tank 2 is an open storage section that stores a cleaning liquid that is a liquid such as a chemical liquid or ultrapure water (DIW). The treatment tank 2 is connected with a first liquid supply pipe 9, a second liquid supply pipe 10 and a gas supply pipe 11 connected to the inside of the treatment tank 2, and further with a liquid circulation pipe 12 and a liquid discharge pipe 13. Has been.

  The first liquid supply pipe 9 is a pipe for supplying a chemical solution into the processing tank 2, one end of which is connected to the side surface of the processing tank 2, and the other end is connected to the upper part of the storage tank 6. Yes. In the middle of the first liquid supply pipe 9, a pump 9a serving as a driving source for supplying chemical liquid, an adjustment valve (for example, an electromagnetic valve) 9b for adjusting the flow rate of the chemical liquid, a flow meter 9c for measuring the flow rate, and a chemical liquid A filter 9d for removing impurities, a check valve 9e for making the flow direction of the chemical liquid in one direction, and the like are provided. The pump 9a, the regulating valve 9b, and the like are electrically connected to the control unit 8 and are driven according to control by the control unit 8. When the adjustment valve 9b is opened, the chemical solution in the storage tank 6 is supplied to the processing tank 2 through the first liquid supply pipe 9 at a predetermined flow rate.

  The second liquid supply pipe 10 is a pipe for supplying ultrapure water (DIW) into the processing tank 2, and one end thereof is connected to the side surface of the processing tank 2 on the same side as the first liquid supply pipe 9. The other end is connected to a tank (not shown) for ultrapure water. In the middle of the second liquid supply pipe 10, an adjustment valve (for example, an electromagnetic valve) 10a for adjusting the flow rate of ultrapure water, a flow meter 10b for measuring the flow rate, a filter 10c for removing impurities from the ultrapure water, and an ultrapure water There is provided a check valve 10d or the like that makes the flow direction of pure water one direction. The regulating valve 10 a is electrically connected to the control unit 8 and is driven according to control by the control unit 8. When the regulating valve 10a is opened, ultrapure water in the tank is supplied to the processing tank 2 through the second liquid supply pipe 10 at a predetermined flow rate.

Here, the above-described chemical liquid and ultrapure water function as a cleaning liquid (processing liquid) for removing foreign substances (for example, resist, particles, metal, etc.) from the processing target substrate W. As the chemical solution, for example, an acid / alkali diluted chemical solution or the like can be used. Examples of the acid / alkaline diluent include H ₂ O ₂ , H ₃ PO ₄ , HCl, HNO ₃ , H ₂ SO ₄ , CH ₃ COOH, NH ₃ OH, and IPA.

The gas supply pipe 11 is a pipe for supplying a gas (for example, N ₂ ) into the processing tank 2, and one end thereof is connected to the side surface of the processing tank 2 on the same side as the liquid supply pipes 9 and 10. The other end is connected to a gas tank (not shown). In the middle of the gas supply pipe 11, an on-off valve (for example, an electromagnetic valve) 11 a that opens and closes the gas supply pipe 11, a flow meter 11 b that measures the flow rate, a filter 11 c that removes impurities from the gas, and a gas flow direction are set. A check valve 11d or the like is provided in the direction. The on-off valve 11 a is electrically connected to the control unit 8 and is driven according to control by the control unit 8. When the on-off valve 11a is opened, the gas in the tank is supplied to the processing tank 2 via the gas supply pipe 11 at a predetermined flow rate.

Here, for example, H ₂ or O ₂ can be used as the gas other than N ₂ . This gas is supplied to the space above the chemical solution or ultrapure water in the treatment tank 2 to temporarily create an inert atmosphere, and the treatment atmosphere is made constant.

  The liquid circulation pipe 12 is a pipe for returning the chemical solution in the processing tank 2 to the storage tank 6, and one end of the liquid circulation pipe 12 is opposite to the side surface to which the liquid supply pipes 9, 10, and 11 are connected in the processing tank 2. The other end is connected to the upper part of the storage tank 6. In the middle of the liquid circulation pipe 12, an on-off valve (for example, an electromagnetic valve) 12a for opening and closing the liquid circulation pipe 12 is provided. The on-off valve 12 a is electrically connected to the control unit 8 and is driven according to control by the control unit 8. During the cleaning process with the chemical liquid, the on-off valve 12a is in an open state, and when the chemical liquid in the processing tank 2 exceeds a certain amount due to the supply of the chemical liquid, the surplus chemical liquid flows through the liquid circulation pipe 12 and returns to the storage tank 6. .

  In the middle of this liquid circulation pipe 12, a waste liquid pipe 12b for waste liquid is connected. In the middle of the waste liquid pipe 12b, an open / close valve (for example, an electromagnetic valve) 12c for opening and closing the waste liquid pipe 12b is provided. The on-off valve 12 c is electrically connected to the control unit 8 and is driven according to control by the control unit 8. During the cleaning process with ultrapure water, the on-off valve 12c is in an open state, and when the ultrapure water in the processing tank 2 exceeds a certain amount due to the supply of ultrapure water, the excess ultrapure water is supplied to the liquid circulation pipe 12. In addition, a part of the waste liquid flows through the waste pipe 12b and is discharged.

  The liquid discharge pipe 13 is a pipe for discharging a cleaning liquid such as a chemical solution or ultrapure water in the processing tank, and one end thereof is connected to the bottom surface of the processing tank 2 near the opposite side surface described above. The other end is connected to the downstream side of the on-off valve 12c in the waste liquid pipe 12b. An opening / closing valve (for example, an electromagnetic valve) 13 a for opening and closing the liquid discharge pipe 13 is provided in the middle of the liquid discharge pipe 13. The on-off valve 13 a is electrically connected to the control unit 8 and opens and closes the liquid discharge pipe 13 in accordance with control by the control unit 8. After the cleaning process, when the on-off valve 13a is opened, the chemical solution or ultrapure water in the processing tank 2 flows through the liquid discharge pipe 13 and part of the waste liquid pipe 12b and is discharged.

  The first moving mechanism 3 supports the processing tank 2 and moves in the X-axis direction and the Y-axis direction orthogonal to the X-axis direction in the horizontal plane, and the processing together with the XY-axis moving mechanism 3a. The tank 2 is configured by a Z-axis moving mechanism 3b that moves the tank 2 in the Z-axis direction orthogonal to the XY-axis direction. The XY axis moving mechanism 3a and the Z axis moving mechanism 3b are electrically connected to the control unit 8, and the processing tank 2 is moved in the X axis direction, the Y axis direction, and the Z axis direction according to control by the control unit 8. Move.

  As the XY axis moving mechanism 3a, for example, a feed screw type mechanism using a servo motor as a drive source or a linear motor type mechanism using a linear motor as a drive source can be used. In addition, as the Z-axis moving mechanism 3b, for example, a jack-type mechanism using a servo motor as a drive source can be used.

  The holding unit 4A includes a support member 4a that supports the processing target substrate W, and a pair of holding members 4b and 4c that hold the support member 4a so as to be movable in the vertical direction (Z-axis direction).

  Here, a pattern Wb is formed on the front surface (lower surface in FIG. 1) Wa of the processing target substrate W. Note that the surface on which the pattern Wb is formed is the first surface, and the surface opposite to the first surface is the second surface. Further, the pattern Wb is formed not in the entire surface Wa of the processing target substrate W but in a central region narrower than the surface region, and a frame region in which the pattern Wb is not formed is generated. Such a processing target substrate W has translucency, and is a substrate through which the laser light L emitted from the irradiation unit 7 is transmitted.

  The support member 4a has, for example, a rectangular opening (through hole) so that the pattern Wb on the surface Wa of the processing target substrate W is exposed in a state where the frame region of the surface Wa of the processing target substrate W is supported. It is formed in a frame shape.

  Each holding member 4b and 4c holds the supporting member 4a from both sides thereof, and is moved in the vertical direction (up-and-down direction), that is, the Z-axis direction by the second moving mechanism 5 to move the chemical solution or ultrapure water in the processing tank 2 The substrate to be processed W on the support member 4a is formed so that it can be immersed in the cleaning liquid.

  The second moving mechanism 5 includes a pair of Z-axis moving mechanisms 5a and 5b that support the holding unit 4A and move the processing target substrate W in the Z-axis direction together with the holding unit 4A. The pair of Z-axis moving mechanisms 5a and 5b are provided so as to sandwich the processing tank 2 on the XY-axis moving mechanism 3a of the first moving mechanism 3, and hold the holding members 4b and 4c of the holding portion 4A. ing. These Z-axis moving mechanisms 5a and 5b are electrically connected to the control unit 8, and move the substrate W to be processed along with the holding unit 4A in the Z-axis direction according to control by the control unit 8.

  Here, the above-described processing target substrate W is brought into close contact with the liquid surface in the processing tank 2 by the movement of the holding unit 4A by the second moving mechanism 5 (as shown in FIG. 1, the processing target substrate W). The pattern Wb on the front surface Wa and the half of the side surface of the substrate are immersed in the cleaning liquid in the processing tank 2) and the substrate unloading position above the opening of the processing tank 2. The close contact means that at least the surface Wa on which the pattern Wb of the substrate W is formed is immersed in the liquid, and the surface facing the surface Wa (the upper surface shown in FIG. 1) is above the liquid surface. In some cases.

  The storage tank 6 is an open storage section that stores a chemical solution. One end of each of the first liquid supply pipe 9 and the liquid circulation pipe 12 is connected to the storage tank 6, and the chemical solution in the storage tank 6 passes through the first liquid supply pipe 9. After being supplied into the processing tank 2, it passes through the liquid circulation pipe 12 and returns to the storage tank 6. This circulation is performed during a cleaning process using a chemical solution.

  The irradiation unit 7 includes a laser oscillation unit 7a that emits a laser beam L and an optical system 7b that irradiates the processing target substrate W held by the holding unit 4A with the emitted laser beam L. The irradiation unit 7 is supported by a support body (not shown) so as to be able to irradiate the laser beam L toward the processing target substrate W on the holding unit 4A above the processing tank 2 having an upper surface opening.

  The laser oscillation unit 7a is connected to a power source, and emits laser light L by power supply from the power source. The laser oscillation unit 7 a is electrically connected to the control unit 8 and emits laser light L in accordance with control by the control unit 8. As the laser type, for example, any of solid, liquid, gas, semiconductor, free electron, chemical laser, and the like can be used.

  The optical system 7b has a predetermined position such as a mirror that reflects the laser light L emitted from the laser oscillation unit 7a toward the processing target substrate W held by the holding unit 4A, and an interface between the processing target substrate W and the cleaning liquid. And a lens for condensing the laser beam L. Note that the optical axis of the laser beam L can be tilted in the range where the total reflection does not occur from the vertical to the surface of the processing target substrate W.

  Here, as shown in FIG. 2, the focal point of the laser beam L is set at the surface Wa of the processing target substrate W, that is, at the interface between the processing target substrate W and the cleaning liquid. However, it is not limited to this interface position, and the focal point of the laser beam L may be within the range A1 (within the range) from the surface Wa of the substrate W to be processed to the height of the pattern Wb, The surface A of the substrate W may be within a range A2 in which an amount of heat that generates bubbles in the cleaning liquid in the vicinity of the substrate interface can be given by irradiation with the laser light L.

  When such a laser beam L passes through the substrate to be processed W, as shown in FIG. 3, the cleaning liquid entering the pattern Wb on the surface Wa of the substrate to be processed W is heated, and this heating causes the bubble B1 near the substrate interface. Occurs. At this time, even if the foreign matter B2 is sandwiched and fixed between the adjacent patterns Wb, the volume of the bubble B1 is expanded by heating, and the foreign matter B2 is pushed out from between the patterns Wb by the external force due to the volume expansion. In this way, the laser light L passes through the processing target substrate W to heat the cleaning liquid in the vicinity of the substrate interface, and the foreign matter on the surface Wa of the processing target substrate W is removed using the external force generated by the bubbles B1 generated on the substrate surface. Is possible (laser cleaning). Thereby, foreign matters can be reliably removed from the surface Wa of the processing target substrate W.

  In addition to the continuous laser, a pulsed laser can be used as the irradiation unit 7. In this case, it is possible to remove the foreign matter from the surface of the processing target substrate W by causing the foreign matter to be vibrated by generation, expansion, contraction, etc. of the bubble by the pulse, and the foreign matter removal efficiency can be improved. However, in the treatment process with ultrapure water or pure water, laser irradiation may or may not be performed.

In addition, as the cleaning liquid, pure water having turbidity in which fine bubbles are generated in the liquid, gas (for example, H ₂ , N ₂ , O _2, etc.) supersaturated liquid, gas saturated liquid, or the like can be used. It is. In this case, bubble generation (bubble generation) by laser irradiation can be promoted. Note that the gas may not be actively supplied as long as O ₂ contained in the atmosphere is sufficient. Further, by adding a chemical solution to ultrapure water, the cleaning liquid transmission spectrum can be adjusted, and the transmission region of the laser light L can be changed.

  Returning to FIG. 1, the control unit 8 includes a microcomputer that centrally controls each unit, and a storage unit that stores various processing information and various programs related to substrate cleaning. The control unit 8 controls various processes such as a laser cleaning process in a chemical solution and a laser cleaning process in ultrapure water (pure water) based on various processing information and various programs.

  Next, substrate processing (substrate processing step) performed by the above-described substrate processing apparatus 1A will be described with reference to FIG. The chemical liquid circulates from the storage tank 6 to the processing tank 2 and from the processing tank 2 to the storage tank 6. Since impurities in the chemical solution are removed by the filter 9d during this circulation, the chemical solution is kept clean.

  As shown in FIG. 4, first, the processing target substrate W is moved from the substrate unloading position to the cleaning processing position (see FIG. 1) by the movement of the holding unit 4 </ b> A (step S <b> 1), and then the laser light L from the irradiation unit 7. Is executed (step S2).

  Specifically, the processing target substrate W is moved by the second moving mechanism 5 together with the holding unit 4A, and is stopped at the cleaning processing position positioned in close contact with the liquid level of the chemical solution in the processing tank 2. Thereafter, the laser beam L is scanned along the surface Wa of the processing target substrate W, and the entire region where the pattern Wb is formed on the surface Wa is irradiated (scanning irradiation). At this time, the processing target substrate W is moved in the X axis direction and the Y axis direction together with the processing tank 2 by the XY axis moving mechanism 3a, so that the laser light L and the processing target substrate W are relatively moved, and the laser scanning described above is performed. Is called. Further, the processing target substrate W is moved together with the processing tank 2 in the Z-axis direction by the Z-axis moving mechanism 3b so that the separation distance from the irradiation unit 7 becomes a predetermined distance. Thereby, the focus position during irradiation of the laser beam L is maintained.

During the laser cleaning process for the chemical solution described above, the on-off valve 11a of the gas supply pipe 11 is opened, and gas (for example, N ₂ ) is supplied to the processing tank 2 so that the processing in the processing tank 2 is performed. The atmosphere is kept constant.

  Further, in the process before step S2, in the case where it is grasped where the foreign matter exists on the surface Wa of the processing target substrate W by an inspection unit (not shown), the part or a predetermined range including the part is included. May be irradiated with laser light L (spot irradiation).

  After completion of the irradiation with the laser beam L in the above-described step S2, the circulation of the chemical solution is stopped, the inside of the processing tank 2 is replaced with the ultrapure water from the chemical solution (step S3), and the irradiation with the laser beam L is executed again after the replacement is completed. (Step S4).

  Specifically, after the laser irradiation in step S2 is completed, the pump 9a is stopped, and the adjustment valve 9b of the first liquid supply pipe 9 and the on-off valve 12a of the liquid circulation pipe 12 are changed from the open state to the processing tank 2. The chemical supply is stopped. Next, the adjustment valve 10a of the second liquid supply pipe 10 is changed from the closed state to the open state, supply of ultrapure water to the treatment tank 2 is started, and the on-off valve 13a of the liquid discharge pipe 13 is opened from the closed state. The chemical solution in the treatment tank 2 is discharged and replaced with ultrapure water. After this replacement is completed, the on-off valve 13a of the liquid discharge pipe 13 is changed from the open state to the closed state, and the on-off valve 12c of the waste liquid pipe 12b is changed from the closed state to the open state.

  In the irradiation with the laser beam L after the replacement is completed, the laser beam L is scanned along the surface Wa of the substrate W to be processed and irradiated to the entire region where the pattern Wb is formed on the surface Wa, as described above. . The processing target substrate W is also moved in the X-axis direction and the Y-axis direction by the XY-axis moving mechanism 3a together with the processing tank 2, and the Z-axis moving mechanism 3b is set so that the separation distance from the irradiation unit 7 becomes a predetermined distance. It moves with the processing tank 2 in the Z-axis direction.

  After completion of the laser beam L irradiation in step S4 described above, the processing target substrate W is moved from the cleaning processing position to the substrate unloading position by the movement of the holding unit 4A (step S5), and then the next processing target substrate W is cleaned. For the treatment, the inside of the treatment tank 2 is replaced with the chemical solution from the ultrapure water, and the circulation of the chemical solution is started after the substitution is completed (step S6).

  Specifically, after completion of the laser irradiation in step S4, the processing target substrate W is moved by the second moving mechanism 5 together with the holding unit 4A, and is stopped at the substrate unloading position for unloading the substrate from the cleaning processing position. Thereafter, the regulating valve 10a of the second liquid supply pipe 10 and the open / close valve 12c of the waste liquid pipe 12b are changed from the open state to the closed state, and the supply of ultrapure water to the treatment tank 2 is stopped. Next, the regulating valve 9b of the first liquid supply pipe 9 is changed from the closed state to the open state, the pump 9a is started, the supply of the chemical liquid to the treatment tank 2 is started, and the on-off valve 13a of the liquid discharge pipe 13 is further turned on. From the closed state to the open state, the ultrapure water in the treatment tank 2 is discharged and replaced with the chemical solution. After this replacement is completed, the on-off valve 13 a of the liquid discharge pipe 13 is changed from the open state to the closed state, the on-off valve 12 a of the liquid circulation pipe 12 is changed from the closed state to the open state, and the chemical solution in the treatment tank 2 passes through the liquid circulation pipe 12. Then, returning to the storage tank 6, the circulation of the chemical solution is started.

  In such a substrate processing step, the laser light L passes through the processing target substrate W during the cleaning process using the chemical solution or ultrapure water. At this time, the surface Wa of the processing target substrate W, that is, the cleaning liquid in the vicinity of the substrate interface is locally heated, and bubbles (bubble B1) are generated in the vicinity of the substrate interface by this heating (see FIG. 3). Thereafter, the foreign matter is removed from the surface Wa of the processing target substrate W by the external force due to the volume expansion of the bubbles, so that the foreign matter can be reliably removed from the surface Wa of the processing target substrate W.

  In particular, the processing target substrate W through which the laser light L passes is located at a cleaning processing position where the processing target substrate W is in close contact with the liquid surface of the cleaning liquid, and functions as a liquid level stabilizing substrate that stabilizes the liquid level of the cleaning liquid. For this reason, since the laser beam L is prevented from being scattered by fluctuations in the cleaning solution, the cleaning solution in the vicinity of the interface of the processing target substrate W is locally heated by the laser beam L irradiated through the substrate and generated in the cleaning solution. It is possible to perform cleaning using an external force generated by the bubbles.

  Moreover, since the chemical solution is circulating, the chemical solution in the processing tank 2 flows. The external force due to this flow is also applied to the bubbles on the surface Wa of the processing target substrate W, and also to foreign matters, so that foreign matters can be removed more reliably and the foreign matter removal efficiency can be improved compared to the case where the chemical solution is not flowing. Can be made.

  As described above, according to the first embodiment, the surface (first surface) Wa of the processing target substrate W is brought into close contact with the liquid surface in the processing tank 2 to hold the processing target substrate W, and The held processing target substrate W is irradiated with the laser light L from the back surface (second surface) which is the opposite surface facing the front surface Wa. Thereby, the liquid level of the cleaning liquid is stabilized, and the cleaning liquid in the vicinity of the interface of the processing target substrate W can be locally heated by laser irradiation. By this heating, bubbles are generated and expanded near the interface of the processing target substrate W, and the foreign matter attached to the pattern Wb is removed by the external force due to the volume expansion of the bubbles. In this way, it is possible to suppress material loss with a thin pattern compared to the lift-off effect due to the chemical solution, and further suppress damage to the processing target substrate W compared to physical cleaning such as brush, ultrasonic wave, spray, etc. Is possible. As a result, fluctuation and deterioration of device electrical characteristics can be prevented and yield can be improved.

  In the first embodiment described above, the processing tank 2 is moved in a horizontal plane, the processing target substrate W and the irradiation unit 7 are relatively moved, and laser irradiation is performed on the surface Wa of the processing target substrate W. However, the present invention is not limited to this. For example, the irradiation unit 7 may be moved to relatively move the processing target substrate W and the irradiation unit 7, and laser irradiation may be performed on the surface Wa of the processing target substrate W. Or you may perform laser irradiation with respect to the surface Wa of the process target board | substrate W, using a galvanometer mirror for the mirror (reflecting mirror) of the irradiation part 7. FIG. That is, the laser beam L may be irradiated to an arbitrary position on the substrate surface by moving three axes (X axis, Y axis, and Z axis), or by changing the optical axis of the laser beam L, You may make it irradiate the laser beam L to the arbitrary positions on the surface.

  In the first embodiment described above, the laser cleaning process is executed in both the chemical solution and the ultrapure water cleaning process. However, the present invention is not limited to this. For example, only one of them is used. A laser cleaning process may be executed.

  Further, in the first embodiment described above, the substrate Wa is arranged with the surface Wa, which is the pattern surface, facing downward with respect to the liquid surface and in close contact with the liquid surface, and the laser L is irradiated from above. However, the present invention is not limited to this, and the substrate W is placed upside down with respect to the embodiment, that is, the surface Wa which is the pattern surface is directed upward with respect to the liquid surface, and is in close contact with the liquid surface. You may make it irradiate L.

(Second Embodiment)
A second embodiment will be described with reference to FIG.

  In the second embodiment, differences from the first embodiment will be described, the same parts as those described in the first embodiment will be denoted by the same reference numerals, and the description thereof will also be omitted.

  As shown in FIG. 5, in the substrate processing apparatus 1 </ b> B according to the second embodiment, the holding unit 4 </ b> B functions as a lid that closes the opening of the processing tank 2 while holding the processing target substrate W. Similar to the support member 4a according to the first embodiment, the holding portion 4B exposes the pattern Wb on the surface Wa of the processing target substrate W while supporting the frame region of the surface Wa of the processing target substrate W. For example, it is formed in a frame shape having a rectangular opening (through hole).

  The first liquid supply pipe 9 is formed so as to discharge the chemical liquid from the tip which is one end thereof, and the tip is provided on the fixed block 21 with the tip facing upward. Thereby, the chemical liquid is discharged and supplied from the front end of the first liquid supply pipe 9 to the surface Wa of the processing target substrate W on the holding unit 4B, and is fixed to the surface Wa of the processing target substrate W on the holding unit 4B. The space with the block 21 is filled with a chemical solution to form a liquid film.

  The second liquid supply pipe 10 is formed so as to discharge ultrapure water (DIW) from the tip which is one end thereof, and the tip is installed on the fixed block 21 with the tip facing upward. Thereby, ultrapure water is discharged and supplied from the tip of the second liquid supply pipe 10 to the surface Wa of the processing target substrate W on the holding unit 4B, and the surface Wa of the processing target substrate W on the holding unit 4B. And the fixed block 21 are filled with ultrapure water to form a liquid film.

The gas supply pipe 11 is formed so as to discharge gas (for example, N ₂ ) from the tip which is one end thereof, and the tip is installed on the fixed block 21 with the tip facing upward. Thereby, gas is discharged from the front end of the gas supply pipe 11 and supplied to the space between the surface Wa of the processing target substrate W on the holding unit 4B and the fixed block 21, and this gas supply is performed by supplying the cleaning liquid. It is executed at the same time.

  The fixed block 21 is provided on the bottom surface of the processing tank 2, and holds the first liquid supply pipe 9, the second liquid supply pipe 10, and the gas supply pipe 11 in a built-in manner. The separation distance between the fixed block 21 and the surface Wa of the processing target substrate W on the holding unit 4B is such that the space is supplied from the first liquid supply pipe 9 or the second liquid supply pipe 10 in the cleaning liquid (chemical liquid or superfluid). It is set to be filled with pure water.

  Here, in the second embodiment, the chemical liquid is not circulated (reused), and the liquid circulation pipe 12, the on-off valve 12a, the waste liquid pipe 12b, the on-off valve 12c, and the like according to the first embodiment are omitted. It has been. The chemical solution may be reused by circulating the chemical solution. Further, since the movement of the holding portion 4B is not necessary, the second moving mechanism 5 is omitted. Furthermore, since the separation distance between the fixed block 21 and the surface Wa of the processing target substrate W on the holding unit 4B is set as described above, the processing tank 2 is downsized as compared with the first embodiment. .

In the substrate processing apparatus 1B described above, the regulating valve 9b of the first liquid supply pipe 9, the on-off valve 11a of the gas supply pipe 11, and the on-off valve 13a of the liquid discharge pipe 13 are changed from the closed state to the open state, and the pump 9a is started. Then, supply of the chemical solution and gas (for example, N ₂ ) to the surface Wa of the processing target substrate W on the holding unit 4B is started. The chemical liquid is discharged from the first liquid supply pipe 9, and further, the gas is discharged from the gas supply pipe 11 and supplied to the surface Wa of the processing target substrate W on the holding unit 4B. At this time, the space between the surface Wa of the processing target substrate W on the holding unit 4B and the fixed block 21 is filled with the chemical solution. The chemical liquid flowing out from the space is discharged from the liquid discharge pipe 13.

  During the cleaning process using the chemical solution, the irradiation of the laser beam L by the irradiation unit 7 is executed in the same manner as in the first embodiment. After completion of the irradiation with the laser light L, the pump 9a is stopped, the adjustment valve 9b of the first liquid supply pipe 9 is changed from the open state to the closed state, and the supply of the chemical liquid is stopped. Next, the regulating valve 10a of the second liquid supply pipe 10 is changed from the closed state to the open state, and supply of ultrapure water to the surface Wa of the processing target substrate W on the holding unit 4B is started. In addition, supply of gas is continued. The ultrapure water is discharged from the second liquid supply pipe 10 and supplied to the surface Wa of the processing target substrate W on the holding unit 4B. At this time, the space between the surface Wa of the processing target substrate W on the holding unit 4B and the fixed block 21 is filled with ultrapure water. The ultrapure water that has flowed out of the space is discharged from the liquid discharge pipe 13.

  During the cleaning process with ultrapure water, the irradiation of the laser beam L by the irradiation unit 7 is performed as in the first embodiment. After the irradiation with the laser light L is completed, the regulating valve 10a of the second liquid supply pipe 10 and the on-off valve 11a of the gas supply pipe 11 are changed from the open state to the supply of ultrapure water and gas. However, in the treatment process with ultrapure water or pure water, laser irradiation may or may not be performed.

  Even in such a substrate processing step, the liquid surface of the cleaning liquid is stabilized as in the first embodiment, and the cleaning liquid in the vicinity of the interface of the processing target substrate W can be locally heated by irradiation with the laser light L. By this heating, bubbles are generated and expanded near the interface of the processing target substrate W, and the foreign matter attached to the pattern Wb can be removed by the external force due to the volume expansion of the bubbles. Further, it is possible to actively dissolve the gas in the cleaning liquid in the treatment tank 2 by supplying the gas, so that the cleaning liquid becomes, for example, a gas saturated liquid, and it is possible to promote bubble generation (bubble generation) by laser irradiation.

  Further, since the cleaning liquid is discharged and supplied, the cleaning liquid accumulated in the space between the surface Wa of the processing target substrate W on the holding unit 4B and the fixed block 21 also flows. Since the external force due to this flow is applied to bubbles and foreign matter on the surface Wa of the processing target substrate W, the foreign matter can be more reliably removed and the foreign matter removal efficiency can be improved as compared with the case where the cleaning liquid is not flowing. be able to.

  As described above, according to the second embodiment, the same effect as that of the first embodiment can be obtained. Further, by supplying the cleaning liquid to the surface Wa of the processing target substrate W from below, the cleaning liquid and the liquid replacement performance can be improved as compared with the case where the cleaning liquid is stored in the processing tank 2.

(Third embodiment)
A third embodiment will be described with reference to FIG.

  In the third embodiment, differences from the first embodiment will be described, and the same parts as those described in the first embodiment will be denoted by the same reference numerals, and the description thereof will also be omitted.

  As shown in FIG. 6, in the substrate processing apparatus 1 </ b> C according to the third embodiment, the holding unit 4 </ b> C functions as a lid that closes the opening of the processing tank 2 while holding the processing target substrate W, 2 and one. One end of the liquid circulation pipe 12 is connected to the holding portion 4 </ b> C, that is, the upper surface of the processing tank 2.

  As in the support member 4a according to the first embodiment, the holding unit 4C exposes the pattern Wb on the surface Wa of the processing target substrate W while supporting the frame region of the surface Wa of the processing target substrate W. Thus, for example, it is formed in a frame shape having a rectangular opening (through hole).

  A sealing member 31 such as an O-ring is provided around the opening of the holding portion 4C. The sealing member 31 is a member that contacts the frame region of the surface Wa of the processing target substrate W on the holding unit 4C and maintains the airtightness in the processing bath 2.

  Further, a fixing member 32 for fixing the processing target substrate W on the holding unit 4C is provided on the upper surface of the holding unit 4C. The fixing member 32 is a member that maintains the airtightness in the processing tank 2 together with the sealing member 31 by fixing the processing target substrate W on the holding portion 4C so as to be pressed.

  A thermometer 33 for measuring the temperature of the cleaning liquid in the processing tank 2 is attached to the processing tank 2. The thermometer 33 is electrically connected to the control unit 8 and sends the measured temperature to the control unit 8 as temperature information.

  In the substrate processing apparatus 1C described above, the regulating valve 9b of the first liquid supply pipe 9, the on-off valve 11a of the gas supply pipe 11, and the on-off valve 12a of the liquid circulation pipe 12 are changed from the closed state to the open state, and the pump 9a is started. Then, supply of the chemical solution and gas to the treatment tank 2 is started. The chemical liquid is supplied from the first liquid supply pipe 9 into the processing tank 2, and the gas is supplied from the gas supply pipe 11 into the processing tank 2. The chemical solution in the processing tank 2 returns to the storage tank 6 through the liquid circulation pipe 12. At this time, when the on-off valve 12a of the liquid circulation pipe 12 is changed from the open state to the closed state, the chemical solution in the processing tank 2 is pressurized by the pressure of the pump 9a. Thereby, the solubility of the gas with respect to a chemical | medical solution improves, and if the on-off valve 12a of the liquid circulation piping 12 is made into an open state from a closed state and a pressure is released, the chemical | medical solution in the processing tank 2 will become a gas supersaturated liquid.

  After releasing the pressure, the irradiation of the laser beam L by the irradiation unit 7 is executed in the same manner as in the first embodiment. After completion of the irradiation with the laser light L, the pump 9a is stopped, the adjustment valve 9b of the first liquid supply pipe 9 is changed from the open state to the closed state, and the supply of the chemical liquid is stopped. Next, the adjustment valve 10a of the second liquid supply pipe 10 is changed from the closed state to the open state, the supply of ultrapure water to the treatment tank 2 is started, and the on-off valve 13a of the liquid discharge pipe 13 is changed from the closed state. The chemical solution in the treatment tank 2 is discharged and replaced with ultrapure water. After the replacement is completed, the on-off valve 13a of the liquid discharge pipe 13 is changed from the open state to the closed state. In addition, since supply of gas is continued, the ultrapure water in the processing tank 2 is pressurized by the pressure by gas supply. Thereby, the solubility of the gas with respect to the ultrapure water is improved, and when the on-off valve 12c of the waste liquid pipe 12b is changed from the closed state to the open state and the pressure is released, the ultrapure water in the treatment tank 2 becomes a gas supersaturated liquid. Become.

  After releasing the pressure, the irradiation of the laser beam L by the irradiation unit 7 is executed in the same manner as in the first embodiment. After the irradiation with the laser light L is completed, the regulating valve 10a of the second liquid supply pipe 10 and the on-off valve 11a of the gas supply pipe 11 are changed from the open state to the supply of ultrapure water and gas. However, in the treatment process with ultrapure water or pure water, laser irradiation may or may not be performed.

  Even in such a substrate processing step, the liquid surface of the cleaning liquid is stabilized as in the first embodiment, and the cleaning liquid in the vicinity of the interface of the processing target substrate W can be locally heated by irradiation with the laser light L. By this heating, bubbles are generated and expanded near the interface of the processing target substrate W, and the foreign matter attached to the pattern Wb can be removed by the external force due to the volume expansion of the bubbles. In addition, foreign substances can be more reliably removed by the flow of the chemical liquid in the processing tank 2 than when the chemical liquid is not flowing, and the foreign substance removal efficiency can be improved.

  Further, as described above, since the processing tank 2 functions as a closed chamber, the cleaning liquid can be pressurized in a completely sealed chamber, the solubility of the gas in the cleaning liquid is increased, and bubble generation (bubble generation) by laser irradiation is further promoted. It is possible to improve the foreign matter removal efficiency. In particular, the cleaning liquid in the processing tank 2 can be a gas supersaturated liquid, and the generation of bubbles by laser irradiation can be promoted.

  As described above, according to the third embodiment, the same effect as that of the first embodiment can be obtained. Furthermore, it is possible to pressurize the cleaning liquid, increase the solubility of the gas in the cleaning liquid, and promote bubble generation by laser irradiation. Thereby, the foreign substance removal efficiency can be improved.

(Fourth embodiment)
A fourth embodiment will be described with reference to FIG.

  In the fourth embodiment, differences from the first embodiment will be described, and the same parts as those described in the first embodiment will be denoted by the same reference numerals, and the description thereof will also be omitted.

  As illustrated in FIG. 7, in the substrate processing apparatus 1 </ b> D according to the fourth embodiment, the holding unit 4 </ b> D holds not the processing target substrate W but the substrate 41 having translucency through which the laser light L is transmitted. The substrate 41 is located on the liquid surface of the cleaning liquid in the processing tank 2 and functions as a liquid surface stabilizing substrate that stabilizes the liquid surface. Thereby, it is possible to prevent the laser light L from being scattered due to fluctuations in the liquid surface of the cleaning liquid.

  Further, a support portion 42 that supports the processing target substrate W is provided on the bottom surface in the processing tank 2. The support part 42 includes a plurality of support members 42a and 42b, and the support members 42a and 42b process the surface Wa of the processing target substrate W upward, that is, toward the substrate 41 held by the holding part 4D. The target substrate W is supported almost horizontally.

  A condensing unit 43 that condenses the laser light L is provided on the bottom surface of the processing tank 2. The condensing unit 43 is located below the processing target substrate W, and condenses (refocuses) the laser light L scattered on the lower portion of the processing target substrate W on the surface Wa of the processing target substrate W. As this condensing part 43, for example, an optical mirror having a parabolic curved surface can be used.

  The processing target substrate W is configured to be movable in the plane direction by a moving mechanism (not shown). As the processing target substrate W moves in the X-axis direction or the Y-axis direction, the laser light L and the processing target substrate W move relative to each other, and the laser light L is scanned along the surface Wa of the processing target substrate W. It will be.

  In the above-described substrate processing apparatus 1D, similarly to the first embodiment, the processing target substrate in which the laser light L is supported by the support unit 42 by the irradiation unit 7 during the cleaning process using a cleaning liquid such as a chemical solution or ultrapure water. The surface Wa of W is irradiated. At this time, a part of the laser light L is scattered on the surface Wa of the processing target substrate W, but the scattered laser light L is condensed again on the surface Wa of the processing target substrate W by the condensing unit 43. . Thereby, compared with the case where the condensing part 43 is not provided, the surface Wa of the processing target substrate W, that is, the cleaning liquid near the substrate interface can be heated at a higher temperature. As a result, bubbles are likely to be generated in the vicinity of the substrate interface, so that foreign matters can be more reliably removed from the surface Wa of the processing target substrate W in a shorter time.

  Further, the substrate 41 through which the laser light L is transmitted is located on the liquid surface of the cleaning liquid, and functions as a liquid surface stabilizing substrate that stabilizes the liquid surface of the cleaning liquid. For this reason, since the laser beam L is prevented from being scattered due to fluctuations in the liquid level of the cleaning liquid, the cleaning liquid near the interface of the processing target substrate W is locally heated by the laser light L irradiated through the substrate, and the cleaning liquid Cleaning can be performed using an external force generated by bubbles generated inside. Note that a liquid that transmits laser light is used as the cleaning liquid to be used.

  As described above, according to the fourth embodiment, the same effect as that of the first embodiment can be obtained. That is, the processing target substrate W supported by the support unit 42 is irradiated with the laser light L with the substrate 41 held on the liquid level of the cleaning liquid in the processing tank 2 by the holding unit 4D. Thereby, the liquid level of the cleaning liquid is stabilized, and the cleaning liquid in the vicinity of the interface of the processing target substrate W can be locally heated by laser irradiation. Due to this heating, bubbles are generated and expanded in the vicinity of the interface of the substrate to be processed W, so that the foreign matter attached to the pattern Wb can be removed by external force due to the volume expansion or buoyancy of the bubbles. As a result, similarly to the first embodiment, fluctuation and deterioration of device electrical characteristics can be prevented, and an improvement in yield can be realized.

  Further, by condensing the scattered laser light L on the surface Wa of the processing target substrate W, the surface Wa of the processing target substrate W, that is, the cleaning liquid near the substrate interface can be heated at a higher temperature. As a result, bubbles are likely to be generated in the vicinity of the substrate interface, so that the cleaning time can be shortened and the foreign matter removal efficiency can be reliably improved.

(Fifth embodiment)
A fifth embodiment will be described with reference to FIG.

  In the fifth embodiment, differences from the first embodiment will be described, and the same parts as those described in the first embodiment will be denoted by the same reference numerals, and the description thereof will also be omitted.

  As shown in FIG. 8, the substrate processing apparatus 1 </ b> E according to the fifth embodiment has an outer tank 2 a outside the processing tank 2. The outer tub 2a is a tub that is open at the top, and is formed so as to accommodate the processing tank 2 therein and to store the chemical solution overflowed from the processing tank 2. The support member 4a ′ of the substrate W is the same mechanism except that the support position of the support member 4a is the side surface of the substrate in the holding unit 4A according to the first embodiment. For example, a frame having a rectangular opening so that the pattern Wb on the surface Wa of the processing target substrate W is exposed in a state where the side surface is supported by the support member 4a ′ (the moving mechanism 5 in the vertical direction is omitted). It is formed in the shape.

  The first liquid supply pipe 9 is formed so as to supply the chemical liquid from the tip, which is one end thereof, to the processing tank 2. When the chemical liquid is stored in the processing tank 2 and overflows, The chemical solution is filled between the opening and the surface Wa of the substrate W. In this state, the surface Wa on which the pattern Wb of the substrate W is formed is in close contact with the chemical solution filled between the opening of the processing tank 2 and the surface Wa of the substrate W.

  The second liquid supply pipe 10 is formed so as to supply ultrapure water (DIW) from the tip which is one end thereof to the treatment tank 2, and the tip is provided on the bottom surface of the treatment tank 2. When the ultrapure water is stored in the processing tank 2 and becomes full and overflows, the ultrapure water is filled between the processing tank 2 and the surface Wa of the substrate W.

  The waste liquid pipe 30 is a pipe for discharging a chemical solution in the processing tank 2 and a cleaning liquid such as ultrapure water, one end of which is connected to the bottom surface of the processing tank 2, and the other end can discharge the cleaning liquid. So as to open downward. An open / close valve 30 a that opens and closes the waste liquid pipe 30 is provided in the middle of the waste liquid pipe 30.

  In this substrate processing apparatus 1E, the regulating valve 9b of the first liquid supply pipe 9 and the on-off valve 13a of the liquid discharge pipe 13 are changed from the closed state to the open state, the pump 9a is started, and the supply of the chemical liquid to the processing tank 2 is started. Is done. At this time, the on-off valve 30a is kept closed. The chemical solution supplied to the processing tank 2 is full and overflows from the processing tank 2 to the outer tank 2a, and the chemical solution is filled between the opening of the processing tank 2 and the surface Wa of the substrate W. . The chemical liquid that has flowed out between the opening of the processing tank 2 and the surface Wa of the substrate W is accumulated in the outer tank 2 a and discharged from the liquid discharge pipe 13.

  During the cleaning process using the chemical solution, the irradiation of the laser beam L by the illumination unit 7 is executed in the same manner as in the first embodiment. After the irradiation of the laser beam L is completed, the pump 9a is stopped, the adjustment valve 9b of the first liquid supply pipe 9 is changed from the open state to the closed state, the on-off valve 30a is opened, and the chemical liquid in the processing tank 2 is discharged as waste liquid. After being drained through the pipe 30, the on-off valve 30a is closed, the adjustment valve 10a of the second liquid supply pipe 10 is changed from the closed state to the open state, and the surface of the processing target substrate W held by the holding unit 4A. Supply of ultrapure water to Wa is started. The ultrapure water supplied to the processing tank 2 is full and overflows from the processing tank 2 to the outer tank 2a, and the ultrapure water is filled between the opening of the processing tank 2 and the surface Wa of the substrate W. It becomes the state. In this state, the surface Wa on which the pattern Wb of the substrate W is formed is in close contact with the ultrapure water filled between the opening of the processing tank 2 and the surface Wa of the substrate W. The ultrapure water that has flowed out between the opening of the processing tank 2 and the surface Wa of the substrate W is accumulated in the outer tank 2 a and discharged from the liquid discharge pipe 13.

  The irradiation of the laser beam L by the irradiation unit 7 may be performed even during the cleaning process with the ultra pure water.

  After completion of the irradiation with the laser light L, the regulating valve 10a of the second liquid supply pipe 10 is changed from the open state to the closed state, and the supply of ultrapure water is stopped.

  Further, the on-off valve 13a of the liquid discharge pipe 13 may be changed from the closed state to the open state simultaneously with the start of supply of the chemical solution or ultrapure water to the treatment tank 2, or the chemical solution overflowed from the treatment tank 2 to the outer tank 2a. Alternatively, after the ultrapure water is stored in the outer tub 2a for a certain time, the on-off valve 13a may be opened to be discharged. The on-off valve 13a is a three-way valve, and it may be drained or the chemical solution may be returned to the storage tank 6.

  Even in such a substrate processing step, as in the first to fourth embodiments, the liquid surface of the cleaning liquid is stabilized, and the cleaning liquid in the vicinity of the interface of the processing target substrate W can be locally heated by irradiation with the laser light L. . By this heating, bubbles are generated and expanded near the interface of the processing target substrate W, and the foreign matter attached to the pattern Wb can be removed by the external force due to the volume expansion of the bubbles.

  In addition, since the cleaning liquid overflows from the processing tank 2 and flows out to the outer tank 2a and is supplied to the surface Wa of the processing target substrate W, the gap between the opening of the processing tank 2 and the surface Wa of the substrate W is filled. Liquid chemicals and ultrapure water flowed. Since the external force due to this flow is also applied to bubbles and foreign matters on the surface Wa of the processing target substrate W, the foreign matter removal efficiency can be further improved as compared with the case where the cleaning liquid is not flowing.

  Further, there is no opportunity for chemicals or ultrapure water to adhere to the side surfaces of the substrate W. Therefore, compared to the case where the entire substrate is immersed and processed, the area that needs to be dried is small, and thus the substrate drying process is more efficient. In addition, the foreign matter adhering to the side surface of the substrate is cleaned. It can also be prevented that it flows and adheres to the W surface Wa side.

  Furthermore, as compared with the substrate processing apparatus 1B of the second embodiment, the tips of the first liquid supply pipe 9 and the second liquid supply pipe 10 are suppressed from being damaged by laser irradiation.

  As described above, according to the fifth embodiment, the same effects as those of the first to fourth embodiments can be obtained.

(Sixth embodiment)
A sixth embodiment will be described with reference to FIG.

  In the sixth embodiment, differences from the first embodiment will be described, and the same parts as those described in the first embodiment will be denoted by the same reference numerals, and the description thereof will also be omitted.

  As shown in FIG. 9, in the substrate processing apparatus 1F according to the sixth embodiment, the holding members 43a and 43b hold the substrate W to be processed with the first surface on which the pattern Wb is formed facing downward. ing. A nozzle 22 is provided so as to face the surface Wa of the substrate W to be processed, and the nozzle 22 is horizontal in at least a region where the pattern Wb on the surface Wa of the substrate W is formed by a moving mechanism (not shown). It is installed so that it can move in the vertical direction and the vertical direction (the support mechanism and moving mechanism of the nozzle 22 are not shown).

  The first liquid supply pipe 9 is formed so as to supply the chemical liquid from the tip which is one end thereof to the nozzle 22, and the tip is provided in the supply path 22 a of the nozzle 22 facing upward. Thereby, the chemical liquid is supplied to the supply path 22a from the tip of the first liquid supply pipe 9 to the surface Wa of the processing target substrate W, and the chemical liquid is discharged from the nozzle 22 and supplied to the surface Wa of the processing target substrate W. The space between the surface Wa of the processing target substrate W and the upper surface of the nozzle 22 is filled with a chemical solution, and a liquid film is formed. That is, when the nozzle 22 faces the surface Wa of the substrate W, the distance between the surface Wa of the substrate W to be processed and the upper surface of the nozzle 22 is such that it can be filled with the chemical discharged from the nozzle 22. The rising position of the nozzle is determined.

  The second liquid supply pipe 10 is formed so as to supply ultrapure water (DIW) from the tip which is one end thereof to the nozzle 22, and the tip of the second liquid supply pipe 10 is provided in the supply path 22 a of the nozzle 22. ing. Thereby, ultrapure water is supplied to the surface Wa of the processing target substrate W from the tip of the second liquid supply pipe 10 to the supply path 22a, and ultrapure water is supplied from the nozzle 22 to the surface Wa of the processing target substrate W. Then, the space between the surface Wa of the processing target substrate W and the upper surface of the nozzle 22 is filled with ultrapure water, and a liquid film is formed.

The gas supply pipe 11 is formed so as to supply gas (for example, N ₂ ) from a tip that is one end thereof, and the tip is provided in the supply path 22 a of the nozzle 22 with the top facing upward. Thereby, gas from the tip of the gas supply pipe 11 is supplied from the nozzle 22 into the space between the surface Wa of the processing target substrate W and the upper surface of the nozzle 22, and this gas supply is performed by supplying a chemical solution or ultrapure water. It is executed at the same time.

  The nozzle 22 is a cylindrical nozzle, and a supply path 22a to which a chemical solution, ultrapure water, or a gas supplied at the same time is supplied is provided in the central portion, and a suction flow path 22b is provided on the outer periphery thereof. ing. The suction channel 22b is connected to the suction pipe 14, and the suction pipe 14 is provided with a suction mechanism (not shown). Since the suction pipe 14 can suck the processing liquid on the surface Wa of the processing target substrate W, the replacement property of the processing liquid can be improved.

  In the pattern Wb formed on the surface Wa of the processing target substrate W, the nozzle 22 moves to a spot where the foreign matter to be removed exists and cleans only that portion. it can. For example, it can be used when a foreign substance removal situation is inspected by the inspection apparatus for the substrate W that has been completely cleaned, and it is found that a foreign substance exists in a part of the substrate W. At this time, the irradiation unit 7 may be moved together with the nozzle. Since only the spot where the foreign matter exists can be processed by the laser beam L, only a part can be processed without processing the entire surface of the substrate W as in the first to fifth embodiments.

  As described above, according to the sixth embodiment, when it is desired to process only a part of the substrate, the same effects as those of the first to fifth embodiments can be obtained.

  In the above-described first to sixth embodiments, when the liquid is flowed, an external force due to this flow is applied to bubbles and foreign matter on the surface Wa of the processing target substrate W, so that the liquid is not flowing. Compared to the above, it is possible to remove foreign matters more reliably, and the effect of improving the foreign matter removal efficiency can be obtained, but the liquid does not necessarily have to flow.

  In the first to fourth embodiments described above, an example in which only the chemical solution is circulated has been described. However, the present invention is not limited to this, and the treatment with ultrapure water is performed while circulating and supplying ultrapure water. Also good.

  As mentioned above, although several embodiment of this invention was described, these embodiment is shown as an example and is not intending limiting the range of invention. For example, the supply of the first treatment liquid, the second treatment liquid, and the like has been described in the embodiment in which the respective supply times do not overlap, but may partially overlap. The above-described novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the spirit of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalents thereof.

DESCRIPTION OF SYMBOLS 1A Substrate processing apparatus 1B Substrate processing apparatus 1C Substrate processing apparatus 1D Substrate processing apparatus 1E Substrate processing apparatus 1F Substrate processing apparatus 2 Processing tank 2a Outer tank 4A Holding part 4B Holding part 4C Holding part 4D Holding part 7 Irradiation part 22 Nozzle 41 Substrate 42 Supporting part 43 Condensing part 43a Holding member 43b Holding member L Laser light W Processing target substrate Wa Surface Wb Pattern

Claims (5)

A treatment tank for storing liquid;
A substrate on which a pattern is formed on the first surface and has a light-transmitting property, a second surface facing the first surface, with the first surface closely contacting the liquid surface of the liquid in the processing tank. A holding part that holds the liquid in a state above the liquid level;
An XY axis moving mechanism that supports the processing tank and moves the processing tank in the X-axis direction and a Y-axis direction perpendicular to the X-axis direction in a horizontal plane, and the X-axis moving mechanism together with the X-axis moving mechanism A first movement mechanism having a Z-axis movement mechanism that moves in the Z-axis direction orthogonal to the axial direction and the Y-axis direction;
A second moving mechanism that is provided on the XY axis moving mechanism, supports the holding portion, and moves the holding portion in the Z-axis direction;
An irradiation unit that irradiates the processing target substrate held by the holding unit with laser light from the second surface side, and generates bubbles in the liquid near the interface between the processing target substrate and the liquid;
When the laser beam is applied to the substrate to be processed by the irradiation unit, the first surface of the substrate to be processed is in close contact with the liquid level of the liquid in the processing bath. A fluidizing section for causing the liquid to flow and applying an external force to the bubbles on the first surface of the substrate to be processed generated by the irradiation of the laser beam;
A substrate processing apparatus comprising: 2. The substrate processing apparatus according to claim 1 , wherein a concentration point of the laser light is within a range of a height of the pattern from the first surface of the substrate to be processed. The substrate processing apparatus according to claim 1 , wherein the liquid is a gas saturated liquid or a gas supersaturated liquid. A substrate processing method for processing a substrate using the substrate processing apparatus according to claim 1,
The processed substrate on which the pattern has a formed light-transmitting on the first surface, the first surface is brought into close contact with the liquid surface of the liquid in the processing bath, opposite to the first surface a step of holding a state where the second surface is above the liquid surface,
To retained the processed substrate, a step to produce said second radiating the laser beam from the surface side, the bubbles in the liquid in the vicinity of the interface between the said processed substrate liquid,
Upon irradiation of the laser light to the processing object substrate, in a state that is close contact with the surface of the liquid of the first surface is the processing bath of the processing target substrate, the liquid in the processing bath Applying an external force to the bubbles on the first surface of the substrate to be processed, which is caused to flow by the laser light irradiation;
A substrate processing method comprising: A substrate processing method for processing a substrate using the substrate processing apparatus according to claim 1,
The processed substrate on which the pattern has a formed light-transmitting on the first surface, the first surface is brought into close contact with the liquid surface of the chemical in the processing bath, opposite to the first surface wherein Holding the second surface in a state above the liquid surface of the chemical solution;
To the processing target substrate held in intimate contact with the first surface to the liquid surface of the liquid chemical in the processing bath, a laser beam is irradiated from the second surface side opposite to the first surface, Generating bubbles in the chemical solution in the vicinity of the interface between the substrate to be treated and the chemical solution;
Upon irradiation of the laser light to the processing object substrate, under conditions which are in close contact with the liquid surface of the chemical solution of the first surface is the processing bath of the processing target substrate, the chemical solution in the processing tank Applying an external force to the bubbles on the first surface of the substrate to be processed, which is caused to flow by the laser light irradiation;
After irradiation of the laser beam, a step of replacing the chemical liquid of the processing bath in pure water,
Wherein the first surface is brought into close contact with the liquid surface of the pure water in the processing bath, said second surface facing said first surface is held in a state that is above the liquid level of the pure water to processed substrate, irradiating a laser beam from the second surface side opposite to the first surface,
A substrate processing method comprising:

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