JP2007059841A - Cleaning apparatus, cleaning method and computer readable storage medium - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a cleaning apparatus capable of effectively removing particles at the edge of a substrate to be treated without destroying a pattern. <P>SOLUTION: When cleaning a wafer W inside a cleaning tub 2 wherein treating liquid to be used for cleaning the wafer W on which the pattern is formed is stored, an ultrasonic wave irradiation unit 10 for irradiating the wafer W with ultrasonic waves is used. The ultrasonic wave irradiation unit 10 is provided with a diaphragm 2b, an ultrasonic vibrator 11 mounted on the diaphragm 2b and a high frequency generation part 12 for supplying the high frequency waves of a frequency capable of outputting the ultrasonic waves of a high straight advance property to the ultrasonic vibrator 11. The ultrasonic vibrator 11 is provided only on a position corresponding to the edge part of the wafer W. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a cleaning apparatus and a cleaning method for immersing and cleaning an object to be processed in a chemical solution tank storing a chemical solution for cleaning, and a computer-readable storage medium for executing the method.

  For example, in the manufacturing process of semiconductor devices, elements such as transistors are formed on a semiconductor wafer (hereinafter simply referred to as a wafer) by various processes, but there are contaminations such as particles, organic contaminants, and metal impurities on the surface. Then, since the performance of the element deteriorates, it is necessary to clean the wafer and remove them. As such a wafer cleaning process, a method in which a predetermined cleaning liquid is stored in a cleaning tank and the wafer is immersed therein is frequently used. Such cleaning treatment includes SPM cleaning (sulfuric acid hydrogen peroxide water cleaning) and APM cleaning (ammonia hydrogen peroxide water cleaning), and has an advantage that particles adhering to the wafer can be effectively removed.

  However, because the wafer edge contacts various members such as guides and transfer mechanisms during processing, a large amount of particles (dust) adhere firmly and cannot be completely removed by the above cleaning. In other words, the remaining particles may be diffused to the wafer when isopropyl alcohol (IPA) is dried after cleaning.

  It is known that megasonic irradiation is effective for removing such particles adhering to the wafer (for example, Patent Document 1). That is, a piezoelectric body is provided in the cleaning tank and the cleaning liquid is irradiated with megasonic ultrasonic waves to remove particles on the wafer.

However, with the recent miniaturization of patterns, irradiation with megasonics often causes pattern destruction, and in many cases, megasonics cannot be used. Alternatively, even if it can be used, its output needs to be considerably reduced, and in this case, particles on the wafer edge cannot be sufficiently removed.
JP 2003-209086 A

  The present invention has been made in view of such circumstances, and a cleaning apparatus and a cleaning method capable of effectively removing dust on an edge of a substrate to be processed without causing pattern collapse, and such a cleaning method. An object is to provide a computer readable storage medium for execution.

  In order to solve the above problems, according to a first aspect of the present invention, a processing tank used for cleaning a substrate to be processed on which a pattern is formed is stored, and a target object is held in the cleaning tank. A processing object holding mechanism, a processing liquid supply mechanism that supplies a processing liquid to the cleaning tank, and an ultrasonic irradiation unit that irradiates the processing target substrate with ultrasonic waves, and the processing target is disposed in the cleaning tank. A cleaning apparatus for supplying a processing liquid to the processing tank and immersing the target substrate in the processing liquid to clean the target object, wherein the ultrasonic irradiation unit is attached to the diaphragm and the diaphragm And a high frequency generator for supplying a high frequency having a frequency capable of outputting a highly straight ultrasonic wave to the ultrasonic vibrator, wherein the ultrasonic vibrator is an edge portion of the object to be processed. The cleaning device is provided only at a position corresponding to Subjected to.

  In the first aspect, the apparatus may further include a drive control unit that controls high-frequency output supplied to the ultrasonic transducer and high-frequency on / off.

  In a second aspect of the present invention, a cleaning tank that stores a processing liquid used for cleaning a substrate to be processed on which a pattern is formed, a target object holding mechanism that holds the target object in the cleaning tank, A treatment liquid supply mechanism for supplying a treatment liquid to the cleaning tank; and an ultrasonic irradiation unit for irradiating the substrate to be processed with ultrasonic waves, and a target object is disposed in the cleaning tank. A cleaning apparatus for supplying a processing liquid and immersing the object to be processed in the processing liquid to clean the object to be processed, wherein the ultrasonic irradiation unit is provided on a portion of the diaphragm corresponding to the substrate to be processed. A plurality of ultrasonic transducers mounted, a high frequency generator for supplying a high frequency to the ultrasonic transducer, and a high frequency capable of outputting ultrasonic waves having a high straightness frequency from the high frequency generator to the ultrasonic transducer Output at the edge of the substrate to be processed. , The pattern forming portion of the target substrate to provide a cleaning apparatus characterized by a control unit for controlling the ultrasonic output from the ultrasonic transducers so as to output the pattern is not destroyed.

  In the first and second aspects, the frequency of the ultrasonic wave is preferably 500 kHz or more. Moreover, it is preferable to further comprise a rotation mechanism for rotating the object to be processed in the cleaning tank. Furthermore, the bottom part of the cleaning tank may be configured as the diaphragm, and the ultrasonic vibrator may be attached to the outside of the bottom part of the cleaning tank.

  According to a third aspect of the present invention, there is provided a cleaning method for cleaning a substrate to be processed on which a pattern is formed with a processing liquid stored in a cleaning tank, wherein only an edge portion of the substrate to be processed is irradiated with ultrasonic waves. There is provided a cleaning method characterized by cleaning a substrate to be processed.

  In this case, the ultrasonic irradiation is performed by generating a high frequency of a vibration plate, an ultrasonic vibrator attached to the vibration plate, and a high frequency of a frequency capable of outputting a highly straight ultrasonic wave to the ultrasonic vibrator. The ultrasonic transducer can be made using an ultrasonic irradiation unit provided only at a position corresponding to the edge portion of the object to be processed.

  According to a fourth aspect of the present invention, there is provided a cleaning method for cleaning a substrate to be processed in which a pattern is formed with a processing liquid stored in a cleaning tank, wherein high-output ultrasonic waves are applied to an edge portion of the substrate to be processed. There is provided a cleaning method characterized in that the substrate to be processed is cleaned while irradiating and irradiating the pattern forming portion of the substrate to be processed with an output of an ultrasonic wave that does not destroy the pattern.

  In this case, the irradiation of the ultrasonic waves includes a vibration plate, a plurality of ultrasonic vibrators mounted on a portion of the vibration plate corresponding to the substrate to be processed, and a high-frequency generator that supplies high frequency to the ultrasonic vibrators And a high frequency capable of outputting ultrasonic waves having a high linearity frequency from the high frequency generator to the ultrasonic transducer, and a high output at the edge portion of the substrate to be processed, and a pattern forming portion of the substrate to be processed. An ultrasonic irradiation unit having a control unit for controlling the ultrasonic output from the ultrasonic transducer so as to obtain a low output that does not destroy the pattern can be used.

  According to a fifth aspect of the present invention, there is provided a computer-readable storage medium storing software that causes a computer to execute a control program, and the software is configured such that any one of the above-described cleaning methods is performed when the program is executed. A computer-readable storage medium is provided for causing a computer to control a cleaning device.

  According to the present invention, it is possible to remove particles by irradiating the edge portion of the substrate on which the pattern is formed by irradiating the ultrasonic wave, and the pattern forming portion is not irradiated with the ultrasonic wave, or the pattern is not destroyed even when irradiated. Since it is an ultrasonic wave with a level of output, particles at the edge portion of the substrate to be processed can be effectively removed without causing pattern destruction.

Hereinafter, embodiments of the present invention will be specifically described. In the present embodiment, an example in which the present invention is applied to a one-pass cleaning apparatus will be described.
FIG. 1 is a plan view showing a cleaning apparatus according to an embodiment of the present invention, FIG. 2 is a sectional view taken along line AA, and FIG. 3 is a sectional view taken along line BB.

  The cleaning apparatus of this embodiment has a housing 1 and a cleaning tank 2 provided therein, and a predetermined processing liquid is stored in the cleaning tank 2. Then, as will be described later, a predetermined treatment liquid is supplied into the cleaning tank 2 through a nozzle 3 (see FIGS. 2 and 3) provided in the cleaning tank 2 from a predetermined supply source. The processing liquid is stored, and a plurality of wafers W are immersed in the processing liquid, and the cleaning process is performed with the processing liquid overflowing from the cleaning tank 2. The overflowed processing liquid flows into an outer tank (not shown). An ultrasonic irradiation unit 10 is provided below the cleaning tank 2 (see FIG. 3).

  In the cleaning tank 2, a plurality of, for example, 50 wafers W are held by the wafer holding member 4. The wafer holding member 4 supports the wafer holding unit 5, and the wafer holding unit 5 that holds the wafer W in the horizontal direction and extends upward from the end of the wafer holding unit 5 along the inner wall of the inner tank 2. The wafer holding part 5 is moved up and down through the support part 6 by a driving mechanism (not shown) so that the wafer W can be taken in and out of the cleaning tank 2. Delivery of the wafer W to the wafer holding member 4 is performed by an appropriate transfer device. The wafer holding unit 5 includes a first holding bar 5a that holds the vicinity of the lower end of the wafer W and a second holding bar 5b that holds the wafer W slightly above. A plurality of grooves for holding the wafer W are formed in the two holding bars 5a and 5b. In the cleaning tank 2, a tank fixing wafer guide 7 fixed to the tank is provided (see FIG. 3), and the wafer W comes into contact when the wafer holding member 4 is lowered. A plurality of wafers W can be rotated by lowering the wafer holding member 4 and bringing the wafer W into contact with the tank fixing wafer guide 7 and further lowering the wafer holding member 4.

  The cleaning tank 2 includes, for example, a side wall portion 2a formed of a material having a high chemical resistance, such as polytetrafluoroethylene (PTFE) or a fluororesin (PFA), and a material having a high resistance to chemicals and sound waves such as an amorphous material. The bottom portion 2b is made of a carbon-based material such as carbon or silicon carbide. Moreover, the bottom part 2b is bolted to the lower end part of the side wall part 4 in the airtight state via the packing. The thickness of the bottom 2b can be set to, for example, 2.0 mm to 10.0 mm when formed of amorphous carbon.

  The ultrasonic irradiation unit 10 includes an ultrasonic vibrator 11, a high-frequency generator 12 that supplies high-frequency power to the vibrator, and a matching circuit 13 that is provided on a power supply line from the high-frequency generator 12 to the ultrasonic vibrator 11. And a drive control unit 14 for individually controlling on / off of the high frequency supplied to the ultrasonic transducer 11 and its output. The high frequency generator 12 incorporates a control mechanism capable of controlling the frequency and power.

  The ultrasonic transducer 11 is configured, for example, as a rectangular plate made of a piezoelectric element, and is attached to the outer portion of the bottom 2 b of the cleaning tank 2. Then, the vibration of the ultrasonic vibrator 11 is supplied to the processing liquid in the cleaning tank 2 through the bottom 2 b of the cleaning tank 2. That is, the bottom 2b functions as a diaphragm.

  As shown in FIG. 4, for example, a total of six ultrasonic transducers 11 are arranged only in the portion corresponding to the edge portion of the wafer W. The high frequency supplied to the ultrasonic transducer 11 is selected to have high straightness. Thereby, it is possible to irradiate only the edge portion of the wafer W with ultrasonic waves. Moreover, since a pattern is destroyed when cavitation occurs, it is required that cavitation does not occur.

  From such a viewpoint, the frequency of the ultrasonic transducer 11 is preferably 500 kHz or more, and more preferably 600 kHz or more. More preferably, it is a megasonic level (1000 kHz or more). High frequency ultrasonic waves are known to have high straightness, and by setting the frequency to 500 kHz or higher, sufficient straightness is achieved and cavitation is hardly generated. Such frequency control is performed by a control mechanism built in the high-frequency generator 12.

  In the present embodiment, the entire bottom portion of the cleaning tank 2 is shown to function as a diaphragm. However, only the portion to which the ultrasonic transducer 11 is attached may function as a diaphragm. Further, a diaphragm may be provided in addition to the bottom of the cleaning tank 2.

  Next, the structure for supplying and discharging the processing liquid in the cleaning apparatus of this embodiment and the control system of the cleaning apparatus will be described with reference to FIG.

Outside the cleaning tank 2 is an outer tank 8 for receiving the overflowed processing liquid. A processing liquid supply pipe 40 for supplying a processing liquid is connected to the nozzle 3 in the cleaning tank 2. A processing liquid supply mechanism 41 is disposed on the other end side of the processing liquid supply pipe 40. The treatment liquid supply mechanism 41 includes an ammonia source 42 for supplying ammonia (NH ₄ OH), a sulfuric acid source 43 for supplying sulfuric acid (H ₂ SO ₄ ), and hydrogen peroxide (H ₂ O ₂ ). A hydrogen peroxide source 44 for supplying and a pure water source 45 for supplying pure water (DIW) are provided. Pipes 46, 47, 48, 49 extending from these are connected to the processing liquid supply pipe 40 via a switching / mixing valve 50. Therefore, by operating the switching / mixing valve 50, these can be cleaned by supplying them alone to the cleaning tank 2 via the pipe 40 and the nozzle 3, and the sulfuric acid hydrogen peroxide solution and ammonia having a predetermined concentration. Hydrogen peroxide water can be prepared and supplied to the cleaning tank 2 via the pipe 40 and the nozzle 3 to realize SPM cleaning and APN cleaning.

  The treatment liquid supply pipe 40 is provided with a temperature control unit 58, a pump 56, and a filter 60 in order from the upstream side. Then, by operating the pump 56, a predetermined processing liquid is fed toward the cleaning tank 2, the processing liquid is heated to a predetermined temperature by the heater 58, and impurities in the history are removed by the filter 60. The treatment liquid is supplied to

  On the other hand, processing liquid discharge pipes 62 and 63 are connected to the bottom of the cleaning tank 2 and the bottom of the outer tank 8, respectively, and are stored in the cleaning tank 2 and the outer tank 8 by operating valves (not shown). The processing liquid that is present can be discharged from the processing liquid discharge pipes 62 and 63.

  Each component of the cleaning apparatus as described above, for example, the switching / mixing valve 50, the pump 56, the heater power supply, the wafer W transfer mechanism, the high frequency generator 12, the drive controller 14 and the like are connected to the process controller 70. The configuration is controlled. Connected to the process controller 70 is a user interface 71 including a keyboard that allows a process manager to input commands to manage the cleaning device, a display that visualizes and displays the operating status of the cleaning device, and the like. .

  Further, the process controller 70 includes a control program for realizing various processes executed by the cleaning device under the control of the process controller 70, and a program for causing each component unit to execute a process according to a processing condition, that is, a recipe. Is stored. The recipe may be stored in a hard disk or a semiconductor memory, or may be set at a predetermined position in the storage unit 72 while being stored in a portable storage medium such as a CDROM or DVD. Furthermore, you may make it transmit a recipe suitably from another apparatus via a dedicated line, for example.

  If necessary, an arbitrary recipe is called from the storage unit 72 by an instruction from the user interface 71 and is executed by the process controller 70, so that a desired process in the cleaning device is performed under the control of the process controller 70. Is done.

Next, an example of a processing operation in the cleaning apparatus configured as described above will be described.
As described above, the cleaning apparatus according to the present embodiment can perform various types of cleaning. Here, APM cleaning in which cleaning is performed using ammonia hydrogen peroxide solution will be described as an example.

  First, when the cleaning tank 2 is empty, the pump 56 is driven to supply pure water (DIW) from the DIW supply source 45 into the cleaning tank 2 through the treatment liquid supply pipe 40 and the nozzle 3. 2 is filled with pure water (DIW). Then, with the wafer holding part 5 of the wafer holding member 4 positioned above the cleaning tank 2, a plurality of, for example, 50 wafers W are transferred from the transfer apparatus (not shown) to the wafer holding part 5 and are driven by a driving mechanism (not shown). The wafer holding member 4 is lowered and the wafer W is immersed in pure water (DIW) in the cleaning tank 2. Then, after the wafer W is immersed in the processing liquid in the cleaning tank 2, cleaning with pure water (DIW) is performed while allowing pure water (DIW) to overflow from the cleaning tank 2.

  When the cleaning with pure water (DIW) is completed, the pure water is discharged from the cleaning tank 2 and the outer tank 8 through the treatment liquid discharge pipes 62 and 63, and then the switching / mixing valve 50 is operated to set a predetermined amount of ammonia. Hydrogen peroxide and pure water are supplied into the cleaning tank 2 to perform APM cleaning.

  APM cleaning has high detergency and good detergency for the entire wafer, but the wafer edge particles that are firmly attached by contacting with a member such as a guide or a transport mechanism during the process may not be sufficiently removed. Is expensive. For this reason, attempts have been made to remove it by ultrasonic waves such as megasonics, but there is a problem that the pattern is destroyed by supplying ultrasonic waves to the pattern forming portion of the wafer. Further, if the output of the ultrasonic wave is reduced to such an extent that the pattern is not destroyed, the particle removal at the wafer edge tends to be insufficient.

  Therefore, in the present embodiment, as described above, the ultrasonic transducer 11 is provided only in the portion corresponding to the edge portion of the wafer W, and ultrasonic waves in a frequency range of high straightness are supplied. For this reason, it is possible to irradiate only the edge portion of the wafer W where there is almost no pattern, effectively cleaning only the edge portion where particles are to be removed, and irradiating the portion where pattern destruction is a concern. Therefore, the pattern can be prevented from being destroyed. High-frequency ultrasonic waves have the property of going straight, so that the desired straightness can be obtained by increasing the frequency. Specifically, as described above, 500 kHz or more is preferable, and 600 kHz or more is more preferable. More preferably, it is a megasonic level (1000 kHz or more). In addition, in such a frequency range, pattern destruction due to cavitation hardly occurs. The desired frequency and output are performed by a control mechanism built in the high frequency generator 12 based on a command from the process controller 70.

  At this time, by rotating the wafer W using the above-described tank-fixed wafer guide 7, ultrasonic waves can be applied to the entire circumference of the wafer edge portion, and particles on the wafer edge portion can be effectively removed.

The rotation operation at this time will be described with reference to FIG.
In the state shown in FIG. 6A, the wafer holding member 4 is in a normal position, and the plurality of wafers W held by the wafer holding unit 5 do not hit the tank fixing wafer guide 7. In this state, the wafer holding member 4 is lowered as shown in FIG. 6B to bring the wafer W into contact with the tank fixing wafer guide 7. When the wafer holding member 4 is further lowered from this state, as shown in FIG. 6C, the wafer W rotates a little with the tank fixed wafer guide 7 as a fulcrum. In this state, the wafer holding member 4 is raised and returned to the position shown in FIG. This operation is repeated as many times as necessary to rotate the wafer at a desired angle. In addition, the wafer W can be rotated more effectively by moving the wafer holding member 4 not only in the vertical direction but also in the horizontal direction.

  After the APM cleaning as described above is performed and the whole of the plurality of wafers W is cleaned, the ammonia hydrogen peroxide solution is discharged from the cleaning tank 2, and then pure water (DIW) is supplied to the cleaning tank 2, Clean with pure water. Thus, the cleaning operation by the cleaning device is completed.

Next, another embodiment of the present invention will be described.
In the above-described embodiment, the case where ultrasonic waves are applied only to the edge portion of the wafer W has been described. However, in this embodiment, ultrasonic waves are applied to the entire surface of the wafer W, and the pattern formation portion of the wafer W is not damaged. The output has a low output, and the edge portion has a high output sufficient for removing particles.

  FIG. 7 is a schematic cross-sectional view showing a cleaning apparatus according to another embodiment. As shown in this figure, an ultrasonic irradiation unit 10 'is provided instead of the ultrasonic irradiation unit 10 of the cleaning apparatus shown in FIG. The ultrasonic irradiation unit 10 ′ has an ultrasonic transducer 11 a corresponding to the edge portion of the wafer W and an ultrasonic transducer 11 b corresponding to the pattern forming portion of the wafer W, which are outside the bottom 2 b of the cleaning tank 2. Affixed to the entire surface. Other configurations are the same as those of the ultrasonic irradiation unit 10. Then, the drive controller 14 supplies an output sufficient for particle removal to the ultrasonic transducer 11 a corresponding to the edge portion of the wafer W, and a pattern is applied to the ultrasonic transducer 11 b corresponding to the pattern forming portion of the wafer W. The output is controlled so that the output does not cause destruction. A command for output control at this time is transmitted from the process controller 70.

  By adopting such a configuration, it is possible to increase the cleaning power to a certain degree even for the pattern forming portion of the wafer W, and it is possible to further improve the cleaning performance as long as pattern destruction does not occur.

  In the cleaning apparatus of FIG. 7, the drive control unit 14 may not supply a high-frequency output to the ultrasonic transducer 11b. In this case, the ultrasonic action similar to that of the previous embodiment can be exerted. .

  In addition, this invention is not limited to the said embodiment, A various deformation | transformation is possible within the range of the thought of this invention. For example, in the above-described embodiment, the one-pass cleaning device has been described as an example. However, the present invention is not limited to this, and any cleaning device that cleans in a cleaning tank is applicable. Moreover, although the example applied to APM washing | cleaning was demonstrated, it cannot be overemphasized that it can apply to the washing | cleaning by other washing | cleaning liquids, such as not only this but SPM washing | cleaning. Furthermore, although the case where the ultrasonic wave was irradiated from the bottom was shown in the said embodiment, the irradiation direction is not limited, For example, you may irradiate from the side and may irradiate from the upper part. Although the case where a semiconductor wafer is applied as an object to be processed has been described in the above embodiment, the present invention can also be applied to a cleaning process for other objects to be processed such as a liquid crystal display (LCD) substrate.

The top view which shows the washing | cleaning apparatus which concerns on one Embodiment of this invention. Sectional drawing by the AA line of FIG. Sectional drawing by the BB line of FIG. The figure for demonstrating the arrangement | positioning state of the ultrasonic transducer | vibrator of the washing | cleaning apparatus shown in FIGS. The schematic diagram shown about the structure for supply and discharge | emission of the process liquid in the washing | cleaning apparatus of one Embodiment of this invention, and the control system of a washing | cleaning apparatus. The schematic diagram explaining an example of substrate rotation operation during cleaning processing in the cleaning device concerning one embodiment of the present invention. Sectional drawing which shows the washing | cleaning apparatus which concerns on other embodiment of this invention.

Explanation of symbols

2; Cleaning tank 3; Nozzle 4; Wafer holding member 5; Wafer holding part 7; Tank fixing wafer guide 10, 10 '; Ultrasonic irradiation unit 11, 11a, 11b; Ultrasonic vibrator 12; Control unit 70; Process controller 72; Storage unit W; Semiconductor wafer

Claims (12)

A cleaning tank in which a processing liquid used for cleaning the substrate to be processed on which the pattern is formed is stored;
A target object holding mechanism for holding a target object in the cleaning tank;
A treatment liquid supply mechanism for supplying a treatment liquid to the cleaning tank;
An ultrasonic irradiation unit for irradiating the substrate to be processed with ultrasonic waves,
In a state in which the object to be processed is arranged in the cleaning tank, the cleaning apparatus supplies the processing liquid to the processing tank and immerses the substrate to be processed in the processing liquid to clean the object to be processed,
The ultrasonic irradiation unit includes:
A diaphragm,
An ultrasonic transducer attached to the diaphragm;
A high-frequency generator that supplies a high frequency of a frequency capable of outputting highly straight ultrasonic waves to the ultrasonic transducer;
The cleaning apparatus according to claim 1, wherein the ultrasonic transducer is provided only at a position corresponding to an edge portion of the object to be processed.   The cleaning apparatus according to claim 1, further comprising a drive control unit that controls high-frequency output supplied to the ultrasonic transducer and on / off of the high frequency. A cleaning tank in which a processing liquid used for cleaning the substrate to be processed on which the pattern is formed is stored;
A target object holding mechanism for holding a target object in the cleaning tank;
A treatment liquid supply mechanism for supplying a treatment liquid to the cleaning tank;
An ultrasonic irradiation unit for irradiating the substrate to be processed with ultrasonic waves,
In a state where the object to be processed is disposed in the cleaning tank, the cleaning apparatus supplies the processing liquid to the processing tank and immerses the object to be processed in the processing liquid to clean the object to be processed,
The ultrasonic irradiation unit includes:
A diaphragm,
A plurality of ultrasonic transducers mounted on a portion of the diaphragm corresponding to the substrate to be processed;
A high frequency generator for supplying a high frequency to the ultrasonic transducer;
The high frequency generator outputs a high frequency capable of outputting an ultrasonic wave having a high linearity frequency to the ultrasonic transducer, and a high output is output at an edge portion of the substrate to be processed, and a pattern is formed at a pattern forming portion of the substrate to be processed. A cleaning apparatus comprising: a control unit that controls an ultrasonic output from the ultrasonic transducer so as to obtain an output that is not destroyed.   The cleaning apparatus according to claim 1, wherein a frequency of the ultrasonic wave is 500 kHz or more.   The cleaning apparatus according to claim 1, further comprising a rotation mechanism that rotates the object to be processed in the cleaning tank.   The bottom part of the said washing tank is comprised as said diaphragm, The said ultrasonic transducer | vibrator is affixed on the outer side of the bottom part of the said washing tank, The any one of Claims 1-5 characterized by the above-mentioned. Cleaning device. A cleaning method for cleaning a substrate to be processed in which a pattern is formed with a processing liquid stored in a cleaning tank,
A cleaning method, comprising: cleaning a substrate to be processed while irradiating only an edge portion of the substrate to be processed with ultrasonic waves.   The ultrasonic irradiation includes a vibration plate, an ultrasonic vibrator mounted on the vibration plate, and a high-frequency generator that supplies a high frequency of a frequency capable of outputting a highly straight ultrasonic wave to the ultrasonic vibrator. The cleaning method according to claim 7, wherein the ultrasonic transducer is made using an ultrasonic irradiation unit provided only at a position corresponding to an edge portion of the object to be processed. A cleaning method for cleaning a substrate to be processed in which a pattern is formed with a processing liquid stored in a cleaning tank,
The substrate to be processed is cleaned while irradiating the edge portion of the substrate to be processed with high output ultrasonic waves and irradiating the pattern forming portion of the substrate to be processed with an output of ultrasonic waves that does not destroy the pattern. How to wash.   The ultrasonic irradiation includes a vibration plate, a plurality of ultrasonic vibrators mounted on a portion of the vibration plate corresponding to the substrate to be processed, a high frequency generator for supplying a high frequency to the ultrasonic vibrator, and the high frequency A high frequency capable of outputting an ultrasonic wave having a high linearity frequency is output from the generator to the ultrasonic vibrator, and the output is high at the edge portion of the substrate to be processed, and the pattern is not destroyed at the pattern forming portion of the substrate to be processed. The cleaning method according to claim 9, wherein the cleaning method is performed using an ultrasonic irradiation unit having a control unit that controls an ultrasonic output from the ultrasonic transducer so that the output is low.   The cleaning method according to claim 7, wherein a frequency of the ultrasonic wave is 500 kHz or more. A computer-readable storage medium storing software for causing a computer to execute a control program,
11. A computer-readable storage medium, wherein the software causes a computer to control a cleaning device so that the cleaning method according to any one of claims 7 to 10 is performed when the program is executed.

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