JP6609109B2 - 熱電変換素子およびその製造方法、および熱電発電装置およびペルチェ装置 - Google Patents
熱電変換素子およびその製造方法、および熱電発電装置およびペルチェ装置 Download PDFInfo
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- JP6609109B2 JP6609109B2 JP2015083899A JP2015083899A JP6609109B2 JP 6609109 B2 JP6609109 B2 JP 6609109B2 JP 2015083899 A JP2015083899 A JP 2015083899A JP 2015083899 A JP2015083899 A JP 2015083899A JP 6609109 B2 JP6609109 B2 JP 6609109B2
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N11/00—Generators or motors not provided for elsewhere; Alleged perpetua mobilia obtained by electric or magnetic means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/857—Thermoelectric active materials comprising compositions changing continuously or discontinuously inside the material
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Hall/Mr Elements (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015083899A JP6609109B2 (ja) | 2015-04-16 | 2015-04-16 | 熱電変換素子およびその製造方法、および熱電発電装置およびペルチェ装置 |
| PCT/JP2016/051215 WO2016166997A1 (fr) | 2015-04-16 | 2016-01-18 | Élément de conversion thermoélectrique et son procédé de production, et dispositif de production d'énergie thermoélectrique et dispositif de peltier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015083899A JP6609109B2 (ja) | 2015-04-16 | 2015-04-16 | 熱電変換素子およびその製造方法、および熱電発電装置およびペルチェ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2016207708A JP2016207708A (ja) | 2016-12-08 |
| JP6609109B2 true JP6609109B2 (ja) | 2019-11-20 |
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| JP2015083899A Active JP6609109B2 (ja) | 2015-04-16 | 2015-04-16 | 熱電変換素子およびその製造方法、および熱電発電装置およびペルチェ装置 |
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| Country | Link |
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| JP (1) | JP6609109B2 (fr) |
| WO (1) | WO2016166997A1 (fr) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017065306A1 (fr) * | 2015-10-16 | 2017-04-20 | 学校法人東京理科大学 | Matériau semi-conducteur, procédé pour générer une porteuse dans une couche conductrice de l'électricité, élément de conversion thermoélectrique et élément de commutation |
| JP6957420B2 (ja) * | 2018-07-18 | 2021-11-02 | 株式会社東芝 | 発電素子、発電モジュール、発電装置及び発電システム |
| US11038048B2 (en) | 2019-10-01 | 2021-06-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Gallium nitride-on-silicon devices |
| WO2022055248A1 (fr) | 2020-09-08 | 2022-03-17 | 한양대학교에리카산학협력단 | Composite thermoélectrique, son procédé de préparation, et dispositif thermoélectrique et dispositif à semi-conducteur comprenant chacun un composite thermoélectrique |
| KR102597072B1 (ko) * | 2020-09-08 | 2023-11-01 | 한양대학교 에리카산학협력단 | 이성분계 산화물 2deg 및 2dhg 열전 소자 기반 능동 냉각 장치 및 그 제조방법 |
| KR102508546B1 (ko) * | 2020-09-08 | 2023-03-09 | 한양대학교 에리카산학협력단 | 2차원 전자 가스 및 2차원 정공 가스 기반의 열전 소자, 및 그 제조방법 |
| WO2024010483A1 (fr) * | 2022-07-06 | 2024-01-11 | Общество С Ограниченной Ответственностью "Технология Твердотельного Охлаждения" | Dispositif de refroidissement à semi-conducteur |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2654828B2 (ja) * | 1989-05-22 | 1997-09-17 | 日本電信電話株式会社 | 量子細線を有する半導体装置及びその製造方法 |
| JPH06310426A (ja) * | 1993-04-21 | 1994-11-04 | Hitachi Ltd | 量子細線構造 |
| JP4872050B2 (ja) * | 2007-11-02 | 2012-02-08 | 株式会社豊田中央研究所 | 熱電素子 |
| JP2010153748A (ja) * | 2008-12-26 | 2010-07-08 | Sanken Electric Co Ltd | 電界効果半導体装置の製造方法 |
| JP2010238699A (ja) * | 2009-03-30 | 2010-10-21 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置 |
| DE112010003214B4 (de) * | 2009-08-07 | 2016-06-16 | Ngk Insulators, Ltd. | Epitaxiesubstrat für eine halbleitervorrichtung, verfahren zur herstellung eines epitaxiesubstrats für eine halbleitervorrichtung, und halbleitervorrichtung |
| JP2011071356A (ja) * | 2009-09-26 | 2011-04-07 | Sanken Electric Co Ltd | 半導体装置 |
| JP5672734B2 (ja) * | 2010-03-25 | 2015-02-18 | 富士通株式会社 | 半導体装置及びその製造方法 |
| US8716141B2 (en) * | 2011-03-04 | 2014-05-06 | Transphorm Inc. | Electrode configurations for semiconductor devices |
| WO2013137957A2 (fr) * | 2011-12-21 | 2013-09-19 | The Regents Of The University Of California | Amélioration de propriétés thermoélectriques par une technique de polarisation |
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2015
- 2015-04-16 JP JP2015083899A patent/JP6609109B2/ja active Active
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2016
- 2016-01-18 WO PCT/JP2016/051215 patent/WO2016166997A1/fr active Application Filing
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| Publication number | Publication date |
|---|---|
| WO2016166997A1 (fr) | 2016-10-20 |
| JP2016207708A (ja) | 2016-12-08 |
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