JP6601512B2 - ヒートシンク付きパワーモジュール用基板及びパワーモジュール - Google Patents

ヒートシンク付きパワーモジュール用基板及びパワーモジュール Download PDF

Info

Publication number
JP6601512B2
JP6601512B2 JP2018009313A JP2018009313A JP6601512B2 JP 6601512 B2 JP6601512 B2 JP 6601512B2 JP 2018009313 A JP2018009313 A JP 2018009313A JP 2018009313 A JP2018009313 A JP 2018009313A JP 6601512 B2 JP6601512 B2 JP 6601512B2
Authority
JP
Japan
Prior art keywords
heat sink
layer
power module
heat
radiation side
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2018009313A
Other languages
English (en)
Japanese (ja)
Other versions
JP2019129208A5 (enExample
JP2019129208A (ja
Inventor
智哉 大開
宗太郎 大井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Corp
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2018009313A priority Critical patent/JP6601512B2/ja
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Priority to CN201980007458.0A priority patent/CN111602238B/zh
Priority to KR1020207020962A priority patent/KR102387210B1/ko
Priority to US16/963,667 priority patent/US11355415B2/en
Priority to PCT/JP2019/002076 priority patent/WO2019146640A1/ja
Priority to EP19743122.4A priority patent/EP3745453B1/en
Priority to TW108102677A priority patent/TWI758579B/zh
Publication of JP2019129208A publication Critical patent/JP2019129208A/ja
Publication of JP2019129208A5 publication Critical patent/JP2019129208A5/ja
Application granted granted Critical
Publication of JP6601512B2 publication Critical patent/JP6601512B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736—Metallic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
    • H01L23/4334—Auxiliary members in encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5386—Geometry or layout of the interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/562—Protection against mechanical damage
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/121—Metallic interlayers based on aluminium
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/16—Silicon interlayers
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/366—Aluminium nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/402—Aluminium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H01L25/072—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/18—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Geometry (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP2018009313A 2018-01-24 2018-01-24 ヒートシンク付きパワーモジュール用基板及びパワーモジュール Active JP6601512B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2018009313A JP6601512B2 (ja) 2018-01-24 2018-01-24 ヒートシンク付きパワーモジュール用基板及びパワーモジュール
KR1020207020962A KR102387210B1 (ko) 2018-01-24 2019-01-23 히트 싱크 부착 파워 모듈용 기판 및 파워 모듈
US16/963,667 US11355415B2 (en) 2018-01-24 2019-01-23 Heat sink-attached power module substrate board and power module
PCT/JP2019/002076 WO2019146640A1 (ja) 2018-01-24 2019-01-23 ヒートシンク付きパワーモジュール用基板及びパワーモジュール
CN201980007458.0A CN111602238B (zh) 2018-01-24 2019-01-23 带散热片的功率模块用基板及功率模块
EP19743122.4A EP3745453B1 (en) 2018-01-24 2019-01-23 Substrate for power module with heat sink, and power module
TW108102677A TWI758579B (zh) 2018-01-24 2019-01-24 附散熱座功率模組用基板及功率模組

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018009313A JP6601512B2 (ja) 2018-01-24 2018-01-24 ヒートシンク付きパワーモジュール用基板及びパワーモジュール

Publications (3)

Publication Number Publication Date
JP2019129208A JP2019129208A (ja) 2019-08-01
JP2019129208A5 JP2019129208A5 (enExample) 2019-09-12
JP6601512B2 true JP6601512B2 (ja) 2019-11-06

Family

ID=67395646

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018009313A Active JP6601512B2 (ja) 2018-01-24 2018-01-24 ヒートシンク付きパワーモジュール用基板及びパワーモジュール

Country Status (7)

Country Link
US (1) US11355415B2 (enExample)
EP (1) EP3745453B1 (enExample)
JP (1) JP6601512B2 (enExample)
KR (1) KR102387210B1 (enExample)
CN (1) CN111602238B (enExample)
TW (1) TWI758579B (enExample)
WO (1) WO2019146640A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021061341A (ja) * 2019-10-08 2021-04-15 昭和電工株式会社 半導体冷却装置
JP7487533B2 (ja) 2020-04-02 2024-05-21 富士電機株式会社 半導体モジュールおよび車両
WO2023032462A1 (ja) * 2021-09-02 2023-03-09 ローム株式会社 半導体装置およびその製造方法
DE102021212232A1 (de) * 2021-10-29 2023-05-04 Zf Friedrichshafen Ag Leistungsmodul und verfahren zum montieren eines leistungsmoduls
DE102022207525A1 (de) 2022-07-22 2024-01-25 Vitesco Technologies Germany Gmbh Leistungsmodul und Verfahren zur Herstellung desselben, Stromrichter mit einem Leistungsmodul
TWI811136B (zh) * 2022-10-17 2023-08-01 創世電股份有限公司 半導體功率元件
TWI836729B (zh) * 2022-11-16 2024-03-21 財團法人工業技術研究院 陶瓷電路板結構及功率模組
JPWO2025027845A1 (enExample) * 2023-08-03 2025-02-06

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003078086A (ja) * 2001-09-04 2003-03-14 Kubota Corp 半導体素子モジュール基板の積層構造
JP5403129B2 (ja) 2012-03-30 2014-01-29 三菱マテリアル株式会社 パワーモジュール用基板、ヒートシンク付パワーモジュール用基板、パワーモジュール、及びパワーモジュール用基板の製造方法
WO2014142310A1 (ja) * 2013-03-14 2014-09-18 三菱マテリアル株式会社 接合体、パワーモジュール用基板、及びヒートシンク付パワーモジュール用基板
JP6621076B2 (ja) * 2013-03-29 2019-12-18 三菱マテリアル株式会社 パワーモジュール用基板、ヒートシンク付パワーモジュール用基板及びパワーモジュール
CN105580131B (zh) * 2013-10-10 2021-03-12 三菱综合材料株式会社 自带散热器的功率模块用基板及其制造方法
JP5892281B2 (ja) 2014-04-25 2016-03-23 三菱マテリアル株式会社 ヒートシンク付きパワーモジュール用基板及びパワーモジュール
JP6384112B2 (ja) 2014-04-25 2018-09-05 三菱マテリアル株式会社 パワーモジュール用基板及びヒートシンク付パワーモジュール用基板
WO2016002803A1 (ja) 2014-07-04 2016-01-07 三菱マテリアル株式会社 パワーモジュール用基板ユニット及びパワーモジュール
CN106463477B (zh) * 2014-07-04 2019-03-12 三菱综合材料株式会社 功率模块用基板单元及功率模块
JP6435711B2 (ja) * 2014-08-21 2018-12-12 三菱マテリアル株式会社 放熱板付パワーモジュール用基板及びパワーモジュール
JP6435945B2 (ja) * 2015-03-23 2018-12-12 三菱マテリアル株式会社 ヒートシンク付きパワーモジュール用基板
JP6638284B2 (ja) * 2015-09-28 2020-01-29 三菱マテリアル株式会社 放熱板付パワーモジュール用基板及びパワーモジュール
JP6137267B2 (ja) * 2015-10-08 2017-05-31 三菱マテリアル株式会社 ヒートシンク付きパワーモジュール用基板及びパワーモジュール
JP6647164B2 (ja) 2016-07-12 2020-02-14 鹿島建設株式会社 地盤改良工法及び地盤改良用プレキャスト地盤の製造方法

Also Published As

Publication number Publication date
CN111602238A (zh) 2020-08-28
CN111602238B (zh) 2023-11-10
TW201933560A (zh) 2019-08-16
EP3745453A4 (en) 2021-10-27
KR20200112845A (ko) 2020-10-05
EP3745453B1 (en) 2022-09-21
US11355415B2 (en) 2022-06-07
WO2019146640A1 (ja) 2019-08-01
JP2019129208A (ja) 2019-08-01
KR102387210B1 (ko) 2022-04-14
TWI758579B (zh) 2022-03-21
US20210074607A1 (en) 2021-03-11
EP3745453A1 (en) 2020-12-02

Similar Documents

Publication Publication Date Title
JP6601512B2 (ja) ヒートシンク付きパワーモジュール用基板及びパワーモジュール
JP6488917B2 (ja) 放熱板付パワーモジュール用基板及びパワーモジュール
EP3166140B1 (en) Substrate unit for power modules, and power module
CN100578768C (zh) 散热装置及功率模块
JP5892281B2 (ja) ヒートシンク付きパワーモジュール用基板及びパワーモジュール
JP6435945B2 (ja) ヒートシンク付きパワーモジュール用基板
CN110998839B (zh) 功率模块
JP6417834B2 (ja) 冷却器付パワーモジュール用基板及び冷却器付パワーモジュール用基板の製造方法
JP6435711B2 (ja) 放熱板付パワーモジュール用基板及びパワーモジュール
JP6638284B2 (ja) 放熱板付パワーモジュール用基板及びパワーモジュール
JP6503796B2 (ja) ヒートシンク付パワーモジュール用基板及びパワーモジュール
JP6565735B2 (ja) パワーモジュール用基板及びパワーモジュール並びにパワーモジュール用基板の製造方法
JP2016167502A (ja) ヒートシンク付パワーモジュール用基板及びパワーモジュール
CN111819681B (zh) 带散热器的绝缘电路基板
JP2004343035A (ja) 放熱部品、回路基板および半導体装置
JP7063559B2 (ja) ベース板及びパワーモジュール

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190701

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20190701

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20190701

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20190711

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20190910

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20190923

R150 Certificate of patent or registration of utility model

Ref document number: 6601512

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250