CN111602238B - 带散热片的功率模块用基板及功率模块 - Google Patents

带散热片的功率模块用基板及功率模块 Download PDF

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Publication number
CN111602238B
CN111602238B CN201980007458.0A CN201980007458A CN111602238B CN 111602238 B CN111602238 B CN 111602238B CN 201980007458 A CN201980007458 A CN 201980007458A CN 111602238 B CN111602238 B CN 111602238B
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heat sink
layer
power module
substrate
heat
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CN111602238A (zh
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大开智哉
大井宗太郎
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Mitsubishi Materials Corp
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Mitsubishi Materials Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736—Metallic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
    • H01L23/4334—Auxiliary members in encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5386—Geometry or layout of the interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/562—Protection against mechanical damage
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/121—Metallic interlayers based on aluminium
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/16—Silicon interlayers
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/366—Aluminium nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/402—Aluminium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H01L25/072—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/18—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Geometry (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
CN201980007458.0A 2018-01-24 2019-01-23 带散热片的功率模块用基板及功率模块 Active CN111602238B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018-009313 2018-01-24
JP2018009313A JP6601512B2 (ja) 2018-01-24 2018-01-24 ヒートシンク付きパワーモジュール用基板及びパワーモジュール
PCT/JP2019/002076 WO2019146640A1 (ja) 2018-01-24 2019-01-23 ヒートシンク付きパワーモジュール用基板及びパワーモジュール

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CN111602238A CN111602238A (zh) 2020-08-28
CN111602238B true CN111602238B (zh) 2023-11-10

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US (1) US11355415B2 (enExample)
EP (1) EP3745453B1 (enExample)
JP (1) JP6601512B2 (enExample)
KR (1) KR102387210B1 (enExample)
CN (1) CN111602238B (enExample)
TW (1) TWI758579B (enExample)
WO (1) WO2019146640A1 (enExample)

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JP2021061341A (ja) * 2019-10-08 2021-04-15 昭和電工株式会社 半導体冷却装置
JP7487533B2 (ja) 2020-04-02 2024-05-21 富士電機株式会社 半導体モジュールおよび車両
DE112022003837T5 (de) * 2021-09-02 2024-05-23 Rohm Co., Ltd. Halbleitervorrichtung und herstellungsverfahren
DE102021212232A1 (de) * 2021-10-29 2023-05-04 Zf Friedrichshafen Ag Leistungsmodul und verfahren zum montieren eines leistungsmoduls
DE102022207525A1 (de) 2022-07-22 2024-01-25 Vitesco Technologies Germany Gmbh Leistungsmodul und Verfahren zur Herstellung desselben, Stromrichter mit einem Leistungsmodul
TWI811136B (zh) * 2022-10-17 2023-08-01 創世電股份有限公司 半導體功率元件
TWI836729B (zh) * 2022-11-16 2024-03-21 財團法人工業技術研究院 陶瓷電路板結構及功率模組
JPWO2025027845A1 (enExample) * 2023-08-03 2025-02-06

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WO2015053316A1 (ja) * 2013-10-10 2015-04-16 三菱マテリアル株式会社 ヒートシンク付パワーモジュール用基板及びその製造方法
JP2016046356A (ja) * 2014-08-21 2016-04-04 三菱マテリアル株式会社 放熱板付パワーモジュール用基板及びパワーモジュール
CN106463477A (zh) * 2014-07-04 2017-02-22 三菱综合材料株式会社 功率模块用基板单元及功率模块
JP2017069275A (ja) * 2015-09-28 2017-04-06 三菱マテリアル株式会社 放熱板付パワーモジュール用基板及びパワーモジュール
CN108140625A (zh) * 2015-10-08 2018-06-08 三菱综合材料株式会社 带散热片的功率模块用基板及功率模块

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JP5403129B2 (ja) 2012-03-30 2014-01-29 三菱マテリアル株式会社 パワーモジュール用基板、ヒートシンク付パワーモジュール用基板、パワーモジュール、及びパワーモジュール用基板の製造方法
WO2014142310A1 (ja) * 2013-03-14 2014-09-18 三菱マテリアル株式会社 接合体、パワーモジュール用基板、及びヒートシンク付パワーモジュール用基板
JP6621076B2 (ja) * 2013-03-29 2019-12-18 三菱マテリアル株式会社 パワーモジュール用基板、ヒートシンク付パワーモジュール用基板及びパワーモジュール
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JP6384112B2 (ja) 2014-04-25 2018-09-05 三菱マテリアル株式会社 パワーモジュール用基板及びヒートシンク付パワーモジュール用基板
JP6488917B2 (ja) * 2014-07-04 2019-03-27 三菱マテリアル株式会社 放熱板付パワーモジュール用基板及びパワーモジュール
JP6435945B2 (ja) * 2015-03-23 2018-12-12 三菱マテリアル株式会社 ヒートシンク付きパワーモジュール用基板
JP6647164B2 (ja) 2016-07-12 2020-02-14 鹿島建設株式会社 地盤改良工法及び地盤改良用プレキャスト地盤の製造方法

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WO2015053316A1 (ja) * 2013-10-10 2015-04-16 三菱マテリアル株式会社 ヒートシンク付パワーモジュール用基板及びその製造方法
CN106463477A (zh) * 2014-07-04 2017-02-22 三菱综合材料株式会社 功率模块用基板单元及功率模块
JP2016046356A (ja) * 2014-08-21 2016-04-04 三菱マテリアル株式会社 放熱板付パワーモジュール用基板及びパワーモジュール
JP2017069275A (ja) * 2015-09-28 2017-04-06 三菱マテリアル株式会社 放熱板付パワーモジュール用基板及びパワーモジュール
CN108140625A (zh) * 2015-10-08 2018-06-08 三菱综合材料株式会社 带散热片的功率模块用基板及功率模块

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TW201933560A (zh) 2019-08-16
JP2019129208A (ja) 2019-08-01
US20210074607A1 (en) 2021-03-11
KR20200112845A (ko) 2020-10-05
JP6601512B2 (ja) 2019-11-06
US11355415B2 (en) 2022-06-07
EP3745453A1 (en) 2020-12-02
CN111602238A (zh) 2020-08-28
TWI758579B (zh) 2022-03-21
KR102387210B1 (ko) 2022-04-14
WO2019146640A1 (ja) 2019-08-01
EP3745453A4 (en) 2021-10-27
EP3745453B1 (en) 2022-09-21

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