JP6592394B2 - プラズマ処理装置の保守方法 - Google Patents
プラズマ処理装置の保守方法 Download PDFInfo
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- JP6592394B2 JP6592394B2 JP2016085347A JP2016085347A JP6592394B2 JP 6592394 B2 JP6592394 B2 JP 6592394B2 JP 2016085347 A JP2016085347 A JP 2016085347A JP 2016085347 A JP2016085347 A JP 2016085347A JP 6592394 B2 JP6592394 B2 JP 6592394B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
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- H—ELECTRICITY
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/3288—Maintenance
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- H—ELECTRICITY
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electromagnetism (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Description
Claims (4)
- 被加工物に対するプラズマ処理を行うためのプラズマ処理装置の保守方法であって、
前記プラズマ処理装置は、
チャンバを提供するチャンバ本体と、
前記チャンバにガスを供給するガス供給部と、
前記チャンバを減圧する排気装置と、
前記チャンバ内のガスを励起させるプラズマ源と、
前記チャンバ内において前記被加工物を支持する支持構造体と、
前記チャンバ内において、鉛直方向に直交する方向に延びる第1軸線周りに前記支持構造体を回転させるよう構成された第1の駆動装置と、
を備え、
前記支持構造体は、
被加工物を保持する静電チャックを含み、前記第1軸線に直交する第2軸線周りに回転可能に設けられた保持部と、
前記保持部の下側に設けられた容器と、
前記容器内に設けられており、前記保持部を前記第2軸線周りに回転させるよう構成された第2の駆動装置と、
前記静電チャックの電極に電気的に接続されたロータリーコネクタと、
を有し、
前記容器は、
筒状の容器本体と、
前記容器本体の下側開口を閉じる底蓋であり、前記容器本体に対して取り外し可能に構成された該底蓋と、
を有し、
該保守方法は、
前記静電チャックに対して前記底蓋が上方に位置するよう、前記支持構造体を前記第1軸線周りに回転させる工程と、
前記底蓋を前記容器本体から取り外す工程と、
前記容器本体内に設けられた部品を保守する工程と、
を含む、保守方法。 - 前記保持部は、前記静電チャックから前記容器内まで前記第2軸線に沿って延びる第2の軸部を有し、
前記支持構造体は、前記容器と前記保持部の前記第2の軸部との間に介在し、前記容器内の空間を前記チャンバから分離するシール部材を更に有する、請求項1に記載の保守方法。 - 前記保持部は、
前記静電チャックと前記容器本体との間に介在する絶縁性のベース部材と、
前記静電チャックを前記ベース部材に対して取り外し可能に固定するための固定具と、を更に有し、
該保守方法は、
前記固定具による前記ベース部材に対する前記静電チャックの固定を解除する工程と、
前記静電チャックを前記ベース部材から取り外す工程と、
を更に含む、請求項1又は2に記載の保守方法。 - 前記保持部には、前記第2軸線が延びる方向に沿って延びる複数の貫通孔が形成されており、
前記支持構造体は、
前記複数の貫通孔にそれぞれ挿入可能に設けられた複数のプッシャーピンと、
前記容器内に設けられた複数の第3の駆動装置であり、前記複数のプッシャーピンの上端の位置を前記静電チャックの上面よりも上方の位置と前記容器内の位置との間で変化させるために該複数のプッシャーピンを個別に移動させるよう構成された、該複数の第3の駆動装置と、
各々が筒状をなし、前記複数の第3の駆動装置にそれぞれ取り付けられた複数のホルダであり、それらの内孔に前記複数のプッシャーピンの基端部がそれぞれ嵌め込まれた、該複数のホルダと、
を更に有し、
該保守方法は、
前記複数のプッシャーピンのうち少なくとも一つのプッシャーピンの上端が前記静電チャックの上面よりも上方に位置するよう、該少なくとも一つのプッシャーピンを移動させる工程と、
前記少なくとも一つのプッシャーピンを前記複数のホルダのうち対応の少なくとも一つのホルダから抜き取る工程と、
を更に含む、請求項1〜3の何れか一項に記載の保守方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016085347A JP6592394B2 (ja) | 2016-04-21 | 2016-04-21 | プラズマ処理装置の保守方法 |
PCT/JP2017/014697 WO2017183507A1 (ja) | 2016-04-21 | 2017-04-10 | プラズマ処理装置の保守方法 |
US16/094,986 US10541142B2 (en) | 2016-04-21 | 2017-04-10 | Maintenance method of plasma processing apparatus |
KR1020187030096A KR102342710B1 (ko) | 2016-04-21 | 2017-04-10 | 플라즈마 처리 장치의 보수 방법 |
CN201780024736.4A CN109075064B (zh) | 2016-04-21 | 2017-04-10 | 等离子体处理装置的保养方法 |
TW106111956A TWI720177B (zh) | 2016-04-21 | 2017-04-11 | 電漿處理裝置之維修方法 |
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JP2016085347A JP6592394B2 (ja) | 2016-04-21 | 2016-04-21 | プラズマ処理装置の保守方法 |
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JP2017195303A JP2017195303A (ja) | 2017-10-26 |
JP6592394B2 true JP6592394B2 (ja) | 2019-10-16 |
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US (1) | US10541142B2 (ja) |
JP (1) | JP6592394B2 (ja) |
KR (1) | KR102342710B1 (ja) |
CN (1) | CN109075064B (ja) |
TW (1) | TWI720177B (ja) |
WO (1) | WO2017183507A1 (ja) |
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US11953194B2 (en) * | 2019-08-20 | 2024-04-09 | Signify Holding, B.V. | High quality white laser-based light source by indirect pumping of red phosphor |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01117317A (ja) * | 1987-10-30 | 1989-05-10 | Sumitomo Metal Ind Ltd | プラズマ装置 |
US6170428B1 (en) * | 1996-07-15 | 2001-01-09 | Applied Materials, Inc. | Symmetric tunable inductively coupled HDP-CVD reactor |
US20020179245A1 (en) * | 1999-03-17 | 2002-12-05 | Toshio Masuda | Plasma processing apparatus and maintenance method therefor |
KR100924237B1 (ko) * | 2002-04-19 | 2009-10-30 | 노드슨 코포레이션 | 플라즈마로 워크피스를 처리하기 위한 장치 및 방법 |
KR100782380B1 (ko) * | 2005-01-24 | 2007-12-07 | 삼성전자주식회사 | 반도체 제조장치 |
JP4736564B2 (ja) * | 2005-06-23 | 2011-07-27 | 東京エレクトロン株式会社 | 載置台装置の取付構造及び処理装置 |
JP5219377B2 (ja) * | 2006-03-16 | 2013-06-26 | 東京エレクトロン株式会社 | 基板載置台および基板処理装置 |
JP2010073823A (ja) * | 2008-09-17 | 2010-04-02 | Tokyo Electron Ltd | 成膜装置、成膜方法、及びコンピュータ可読記憶媒体 |
JP2010186891A (ja) * | 2009-02-12 | 2010-08-26 | Tokyo Electron Ltd | プラズマ処理装置、プラズマ処理装置のメンテナンス方法及びプラズマ処理装置の組み立て方法 |
JP5181100B2 (ja) * | 2009-04-09 | 2013-04-10 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及び記憶媒体 |
JP6373160B2 (ja) * | 2014-10-15 | 2018-08-15 | 東京エレクトロン株式会社 | プラズマ処理装置 |
-
2016
- 2016-04-21 JP JP2016085347A patent/JP6592394B2/ja active Active
-
2017
- 2017-04-10 US US16/094,986 patent/US10541142B2/en active Active
- 2017-04-10 CN CN201780024736.4A patent/CN109075064B/zh active Active
- 2017-04-10 WO PCT/JP2017/014697 patent/WO2017183507A1/ja active Application Filing
- 2017-04-10 KR KR1020187030096A patent/KR102342710B1/ko active IP Right Grant
- 2017-04-11 TW TW106111956A patent/TWI720177B/zh active
Also Published As
Publication number | Publication date |
---|---|
TWI720177B (zh) | 2021-03-01 |
KR102342710B1 (ko) | 2021-12-22 |
TW201802932A (zh) | 2018-01-16 |
KR20180134910A (ko) | 2018-12-19 |
CN109075064A (zh) | 2018-12-21 |
US10541142B2 (en) | 2020-01-21 |
WO2017183507A1 (ja) | 2017-10-26 |
CN109075064B (zh) | 2023-01-06 |
JP2017195303A (ja) | 2017-10-26 |
US20190131137A1 (en) | 2019-05-02 |
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