JP6576609B1 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6576609B1 JP6576609B1 JP2019534990A JP2019534990A JP6576609B1 JP 6576609 B1 JP6576609 B1 JP 6576609B1 JP 2019534990 A JP2019534990 A JP 2019534990A JP 2019534990 A JP2019534990 A JP 2019534990A JP 6576609 B1 JP6576609 B1 JP 6576609B1
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Abstract
Description
実施の形態1について説明する。半導体装置は、少なくとも1つの半導体チップを用いた、例えば、変電設備に用いられる電力変換用半導体装置のような半導体装置であり、半導体チップの上方向にカバープレートと、半導体チップの下方向にベースプレートを備えた、圧力接触型の、いわゆる圧接型半導体装置であるが、本願の半導体装置の形は限定しない。半導体チップは、当該カバープレート下および当該ベースプレート上に配置され、半導体チップ上下に配置される通電用部材および電極板によって押圧されながら、それぞれ隣接する各要素と電気的に接続されている。また、半導体チップは電流をスイッチングする素子であり、半導体装置内部に配置されている内側フレームによって、個々に分離されている構造である。半導体チップには、電流をスイッチングするために、通電部材以外に信号用の端子が配置されており、その信号用の端子の一端は半導体チップの信号パッドに接続されるとともに、他端はカバープレート下に配置されたゲート/エミッタ信号用基板に接続されている。内側フレームの外周は、外側フレームによって囲まれており、当該外側フレームは、内側フレームを囲むように配置された外壁を、補強部材で取り囲むことによって構成される。また、半導体装置は、一つの半導体装置を用いるものであってもよいし、複数個積層してもよい。また、内側フレームを構成として含まない場合は、外側フレームが半導体チップを取り囲む構造となる。
実施の形態1では、横断面が矩形の外側フレーム2が設けられた場合について説明したが、実施の形態2では、横断面が円形の外側フレームが設けられた場合について説明する。
実施の形態1および実施の形態2では、外壁3の厚さが均一の場合について説明したが、実施の形態2では、外壁3の特定の部位を厚くする場合について説明する。
実施の形態1から実施の形態3では、外壁3の外表面に沿って補強部材4を巻き付けた場合について説明したが、実施の形態4では、外壁3に設けた溝に沿って補強部材を巻き付けた場合について説明する。
しかしながら、上記のように補強部材を外壁3の溝17に嵌合するように巻き付けることで、補強部材4が外壁3に強固に固定されるので、外壁の局所的なふくらみが生じて圧力が集中し、外壁が破裂することを防止でき、半導体装置の破裂に対する耐久力が向上する。このような半導体装置を囲む外側フレームは、小型化を必要とする半導体装置以外にも、圧力の上昇に耐えるための構造として利用可能である。
実施の形態1から実施の形態4では、圧力接触型の半導体装置の場合について説明したが、実施の形態5では、ボンディングワイヤ等を用いて電気接続した半導体装置の場合について説明する。
Claims (10)
- 半導体チップの外周を取り囲む第一のフレームと、
前記第一のフレームの外周を取り囲む第二のフレームと
を備え、
前記第二のフレームは、前記第一のフレームの外周を取り囲む外壁と、前記外壁の外周に巻き付けられ、前記外壁の変形を拘束する繊維状の補強部材とからなることを特徴とする半導体装置。 - 前記半導体チップは、カバープレートとベースプレートに押圧されて前記半導体チップの表面電極および裏面電極と接触して電気的に接続されたことを特徴とする請求項1に記載の半導体装置。
- 前記外壁は、前記第一のフレームよりも高い耐衝撃性および衝撃吸収性を有する材料からなることを特徴とする請求項1または請求項2に記載の半導体装置。
- 前記補強部材は、前記外壁よりも高い破断強度を有する材料からなることを特徴とする請求項1から請求項3のいずれか1項に記載の半導体装置。
- 前記外壁および前記補強部材は、高分子材料からなることを特徴とする請求項1から請求項4のいずれか1項に記載の半導体装置。
- 前記外壁は、超高分子量ポリエチレン樹脂からなることを特徴とする請求項5に記載の半導体装置。
- 前記補強部材は、超高分子量ポリエチレン繊維からなることを特徴とする請求項5に記載の半導体装置。
- 前記外壁は、前記補強部材を嵌合して巻き付ける溝が設けられたことを特徴とする請求項1から請求項7のいずれか1項に記載の半導体装置。
- 前記第二のフレームは、円筒形で設けられたことを特徴とする請求項1から請求項8のいずれか1項に記載の半導体装置。
- 前記外壁は、外側の形状が多角形で、内側の形状が円形で設けられたことを特徴とする請求項1から請求項9のいずれか1項に記載の半導体装置。
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Application Number | Priority Date | Filing Date | Title |
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PCT/JP2019/003641 WO2020157960A1 (ja) | 2019-02-01 | 2019-02-01 | 半導体装置 |
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JP6576609B1 true JP6576609B1 (ja) | 2019-09-18 |
JPWO2020157960A1 JPWO2020157960A1 (ja) | 2021-02-18 |
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JP2019534990A Active JP6576609B1 (ja) | 2019-02-01 | 2019-02-01 | 半導体装置 |
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US (1) | US11972991B2 (ja) |
JP (1) | JP6576609B1 (ja) |
CN (1) | CN113330556A (ja) |
DE (1) | DE112019006791T5 (ja) |
WO (1) | WO2020157960A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7444529B2 (ja) | 2021-05-17 | 2024-03-06 | 東芝三菱電機産業システム株式会社 | 電力変換装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000091455A (ja) * | 1998-08-29 | 2000-03-31 | Asea Brown Boveri Ag | 爆発保護素子を有する半導体モジュ―ル |
WO2015178393A1 (ja) * | 2014-05-23 | 2015-11-26 | 住友ベークライト株式会社 | 金属箔張基板、回路基板および電子部品搭載基板 |
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WO2015178393A1 (ja) * | 2014-05-23 | 2015-11-26 | 住友ベークライト株式会社 | 金属箔張基板、回路基板および電子部品搭載基板 |
JP2016082105A (ja) * | 2014-10-17 | 2016-05-16 | 株式会社東芝 | 半導体装置 |
JP2016157819A (ja) * | 2015-02-24 | 2016-09-01 | 株式会社東芝 | 半導体装置及び半導体モジュール |
JP2017084850A (ja) * | 2015-10-22 | 2017-05-18 | 日本発條株式会社 | 電力用半導体装置 |
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