JP6571861B2 - 半導体レーザ - Google Patents
半導体レーザ Download PDFInfo
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- JP6571861B2 JP6571861B2 JP2018504761A JP2018504761A JP6571861B2 JP 6571861 B2 JP6571861 B2 JP 6571861B2 JP 2018504761 A JP2018504761 A JP 2018504761A JP 2018504761 A JP2018504761 A JP 2018504761A JP 6571861 B2 JP6571861 B2 JP 6571861B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0281—Coatings made of semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
- H01S5/221—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials containing aluminium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
- H01S5/04253—Electrodes, e.g. characterised by the structure characterised by the material having specific optical properties, e.g. transparent electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
- H01S5/162—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions made by diffusion or disordening of the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
- H01S5/166—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising non-semiconducting materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Description
2 半導体積層体
3 p接触層
4 金属pコンタクト構造
5 電流保護領域
6 絶縁体層
7 半導体積層体の基板
8 絶縁層
9 リッジ導波路
21 n領域
22 活性ゾーン
23 p領域
25 ファセット
61 修正部
I 強度
Claims (11)
- 半導体レーザ(1)であって、
− n型導電性のn領域(21)と、p型導電性のp領域(23)と、レーザ放射を生成する中間の活性ゾーン(22)と、前記レーザ放射のための共振器端面を形成している2つのファセット(25)とを有する半導体積層体(2)と、
− 透明導電性酸化物からなり、前記p領域(23)に電流を直接印加する導電性のp接触層(3)と、
− 前記p接触層(3)の上に直接位置し、導電性であり金属のpコンタクト構造(4)と、
を備え、
− 前記ファセット(25)の少なくとも1つの上に直接設けられている少なくとも1つの電流保護領域(5)において、前記p領域(23)への電流印加は抑制され、
− 前記pコンタクト構造(4)は、関連する前記ファセット(25)よりも突き出さないように、関連する前記ファセット(25)と同一平面内で終了しており、
− 前記電流保護領域(5)の少なくとも1つから前記p接触層(3)が除去されており、かつ、当該電流保護領域(5)の少なくとも1つにおいて、前記pコンタクト構造(4)は、前記p領域(23)に直接接触し、
− 前記少なくとも1つの電流保護領域(5)において、前記p接触層(3)は、前記ファセット(25)の方に向かって連続的に薄くなっている、
半導体レーザ(1)。 - 前記p接触層(3)の厚さは、直線状に減少する、
請求項1に記載の半導体レーザ(1)。 - 前記p接触層(3)の厚さは、曲線形状を伴って減少する、
請求項1に記載の半導体レーザ(1)。 - 前記p接触層(3)は、ZnOからなる、
請求項1〜3の何れか1項に記載の半導体レーザ(1)。 - 前記電流保護領域(5)は、少なくとも5μmかつ最大で100μmの範囲であって、前記レーザ放射のための共振器の長さの最大で5%の範囲を有する、
請求項1〜4のいずれか1項に記載の半導体レーザ(1)。 - 前記電流保護領域(5)において、前記p領域(23)への電流印加が阻止される、または少なくとも1/10に減少するように、前記p領域(23)は修正されている、
請求項1〜5のいずれか1項に記載の半導体レーザ(1)。 - 修正された前記p領域(23)は、部分的に、または領域全体にわたり、前記pコンタクト構造(4)に直接隣接している、
請求項6に記載の半導体レーザ(1)。 - 前記p接触層(3)は、前記電流保護領域(5)において部分的にのみ除去されており、
前記p接触層(3)は、関連する前記ファセット(25)の直近において完全に除去されている、
請求項1〜7のいずれか1項に記載の半導体レーザ(1)。 - 前記p接触層(3)が完全に除去されている領域は、前記ファセット(25)に垂直な方向において、少なくとも2μmの範囲であって、関連する前記電流保護領域(5)の範囲の最大で50%の範囲を有する、
請求項1〜8のいずれか1項に記載の半導体レーザ(1)。 - 前記電流保護領域(5)は、関連する前記ファセット(25)に垂直な方向において、最大で100μmの範囲であって、前記レーザ放射のための共振器の長さの最大で20%の範囲を有する、
請求項1〜9のいずれか1項に記載の半導体レーザ(1)。 - リッジ導波路(9)を有するストライプレーザである、
請求項1〜10のいずれか1項に記載の半導体レーザ(1)。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102015116336.5A DE102015116336B4 (de) | 2015-09-28 | 2015-09-28 | Halbleiterlaser |
DE102015116336.5 | 2015-09-28 | ||
PCT/EP2016/073003 WO2017055287A1 (de) | 2015-09-28 | 2016-09-27 | Halbleiterlaser mit unterdrückter stromeinprägung an der facette |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018523311A JP2018523311A (ja) | 2018-08-16 |
JP6571861B2 true JP6571861B2 (ja) | 2019-09-04 |
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JP2018504761A Active JP6571861B2 (ja) | 2015-09-28 | 2016-09-27 | 半導体レーザ |
Country Status (5)
Country | Link |
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US (1) | US10333278B2 (ja) |
JP (1) | JP6571861B2 (ja) |
CN (1) | CN108352678B (ja) |
DE (1) | DE102015116336B4 (ja) |
WO (1) | WO2017055287A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102015116335A1 (de) * | 2015-09-28 | 2017-03-30 | Osram Opto Semiconductors Gmbh | Halbleiterlaser |
DE102016125857B4 (de) | 2016-12-29 | 2022-05-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterlaserdiode |
DE102017113389B4 (de) * | 2017-06-19 | 2021-07-29 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterlaserdiode |
DE102017122032A1 (de) | 2017-09-22 | 2019-03-28 | Osram Opto Semiconductors Gmbh | Laserdiode |
US20220077657A1 (en) * | 2018-12-31 | 2022-03-10 | Nlight, Inc. | Method, system and apparatus for differential current injection |
DE102019106536A1 (de) * | 2019-03-14 | 2020-09-17 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterlaserdiode und Verfahren zur Herstellung einer Halbleiterlaserdiode |
CN111541148B (zh) * | 2020-05-15 | 2021-06-11 | 陕西源杰半导体技术有限公司 | 一种25g抗反射激光器的制备工艺 |
CN213212654U (zh) * | 2020-08-13 | 2021-05-14 | 深圳市中光工业技术研究院 | 外延结构及应用其的半导体芯片 |
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-
2015
- 2015-09-28 DE DE102015116336.5A patent/DE102015116336B4/de active Active
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2016
- 2016-09-27 JP JP2018504761A patent/JP6571861B2/ja active Active
- 2016-09-27 US US15/752,442 patent/US10333278B2/en active Active
- 2016-09-27 WO PCT/EP2016/073003 patent/WO2017055287A1/de active Application Filing
- 2016-09-27 CN CN201680047847.2A patent/CN108352678B/zh active Active
Also Published As
Publication number | Publication date |
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DE102015116336A1 (de) | 2017-03-30 |
US10333278B2 (en) | 2019-06-25 |
CN108352678B (zh) | 2020-03-06 |
US20190013649A1 (en) | 2019-01-10 |
DE102015116336B4 (de) | 2020-03-19 |
JP2018523311A (ja) | 2018-08-16 |
WO2017055287A1 (de) | 2017-04-06 |
CN108352678A (zh) | 2018-07-31 |
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