JP6567661B2 - 温度補償されたプレート共振器 - Google Patents
温度補償されたプレート共振器 Download PDFInfo
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- JP6567661B2 JP6567661B2 JP2017517790A JP2017517790A JP6567661B2 JP 6567661 B2 JP6567661 B2 JP 6567661B2 JP 2017517790 A JP2017517790 A JP 2017517790A JP 2017517790 A JP2017517790 A JP 2017517790A JP 6567661 B2 JP6567661 B2 JP 6567661B2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 22
- 229910052710 silicon Inorganic materials 0.000 claims description 22
- 239000010703 silicon Substances 0.000 claims description 22
- 239000013078 crystal Substances 0.000 claims description 19
- 239000002019 doping agent Substances 0.000 claims description 11
- 230000008602 contraction Effects 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000005452 bending Methods 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims 1
- 230000001419 dependent effect Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000725 suspension Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 241001347978 Major minor Species 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 102100022123 Hepatocyte nuclear factor 1-beta Human genes 0.000 description 1
- 101001045758 Homo sapiens Hepatocyte nuclear factor 1-beta Proteins 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000007306 turnover Effects 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H9/02433—Means for compensation or elimination of undesired effects
- H03H9/02448—Means for compensation or elimination of undesired effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
- H03H9/2436—Disk resonators
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H2009/02488—Vibration modes
- H03H2009/02496—Horizontal, i.e. parallel to the substrate plane
- H03H2009/02503—Breath-like, e.g. Lam? mode, wine-glass mode
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H2009/02488—Vibration modes
- H03H2009/02527—Combined
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
- H03H2009/2442—Square resonators
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Micromachines (AREA)
Description
用語「共振器プレート」は、5より小さい、特に2より小さいアスペクト比を有し、幅伸縮モード、即ちプレートがその最短寸法に沿って伸縮を反復するモード、で共振し得る平面素子を指す。本明細書に開示するように、殆どのプレート形状に対して、最適アスペクト、即ちTCF1及びTCF2を両方ともゼロにし得るアスペクト比は1.5未満である。例えば、長方形プレートの場合には、最適アスペクト比は1.3又はほぼ1.3である。
f(T)=f0[1+TCF1×ΔT+TCF2×ΔT2]
ここで、ΔT=T−T0は温度差であり、f0は基準温度T0における周波数である(更なる詳細は、例えば、A. K. Samarao at al, "Passive TCF compensation in high q silicon micromechanical resonators, " in IEEE International Conference on Micro Electro Mechanical Systems (MEMS 2010), Hong Kong, Jan. 2010, pp. 116-119,を参照されたい)。特に断りがなければ、ここではT0=25℃を使用する。
Claims (15)
- 支持構造と、
n型ドーピング剤であるドーピング濃度にドープされ、少なくとも部分的に幅伸縮共振モードで共振し得る半導体共振器プレートと、
前記共振器プレートを前記支持構造に懸架する少なくとも一つのアンカーと、
前記共振器プレートに前記幅伸縮共振モードを励起するアクチュエータと、
を備えるマイクロ電気機械共振器装置において、
前記共振器プレートは、シリコン共振器プレートであり、1.2*1020cm−3ないし1.5*1020cm−3のドーピング濃度にドープされ、且つ前記ドーピング濃度及び前記幅伸縮共振モードと相俟って、少なくとも一つの温度において、12ppb/C2又はそれ以下の二次周波数温度係数(TCF2)をもたらす面内アスペクト比が1.3ないし1.5の平面形状を有する、ことを特徴とする共振器装置。 - 前記共振器プレートは前記アクチュエータの一部分を形成する圧電薄膜を備えている、ことを特徴とする請求項1記載の共振器装置。
- 前記共振器プレートの形状は長方形である、ことを特徴とする請求項1〜2のいずれかに記載の共振器装置。
- 前記共振器プレートの形状は楕円形である、ことを特徴とする請求項1〜2のいずれかに記載の共振器装置。
- 前記共振器装置の一次周波数温度係数(TCF1)が前記少なくとも一つの温度において1ppm/C又はそれ以下になる、ことを特徴とする請求項1〜4のいずれかに記載の共振器装置。
- 前記共振器プレートの形状は非正方形及び非円形である、ことを特徴とする請求項1〜5のいずれかに記載の共振器装置。
- 前記共振器プレートは、その半導体結晶の[100]方向と5度の精度で整列した対称軸を有する、ことを特徴とする請求項1〜6のいずれかに記載の共振器装置。
- 前記対称軸は前記共振器プレートの長手方向軸と一致する、ことを特徴とする請求項7記載の共振器装置。
- 前記共振器プレートは1.3〜1.5のアスペクト比を有する、長方形又は楕円形のベースプレートのようなベースプレートを備えていること及び前記ベースプレートから横方向に延びる、ビーム突出部のような1以上の突出部が設けられていること、を特徴とする請求項1〜8のいずれかに記載の共振器装置。
- 前記ベースプレートは前記幅伸縮モードで共振し、前記突出部は屈曲モード、ねじれモード又は長さ伸縮モードで共振するように構成されている、ことを特徴とする請求項9記載の共振器装置。
- 前記プレート共振器は1.25*1020cm−3 ないし1.5*10 20 cm −3 のドーピング濃度にドープされている、ことを特徴とする請求項1〜10のいずれかに記載の共振器装置。
- 前記二次周波数温度係数(TCF2)が前記少なくとも一つの温度において6ppb/C2又はそれ以下、特に3ppb/C2又はそれ以下になる、ことを特徴とする請求項1〜11のいずれかに記載の共振器装置。
- 前記共振器装置の一次周波数温度係数(TCF1)が前記少なくとも一つの温度において0.5ppm/C又はそれ以下になるとともに、前記二次周波数温度係数(TCF2)が前記少なくとも一つの温度において3ppb/C2又はそれ以下になる、ことを特徴とする請求項1〜12のいずれかに記載の共振器装置。
- 前記一次周波数温度係数(TCF1)および前記二次周波数温度係数(TCF2)の総合周波数ドリフトは−40℃から85℃の範囲のような125℃の温度範囲に亘って50ppm未満である、ことを特徴とする請求項5又は13に記載の共振器装置。
- 前記アクチュエータは前記共振器プレートと音響的に結合された圧電アクチュエータを備える、ことを特徴とする請求項1〜14のいずれかに記載の共振器装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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FI20145869 | 2014-10-03 | ||
FI20145869 | 2014-10-03 | ||
PCT/FI2015/050661 WO2016051025A1 (en) | 2014-10-03 | 2015-10-02 | Temperature compensated plate resonator |
Publications (2)
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JP2017531949A JP2017531949A (ja) | 2017-10-26 |
JP6567661B2 true JP6567661B2 (ja) | 2019-08-28 |
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US (1) | US9837981B2 (ja) |
EP (1) | EP3202035B1 (ja) |
JP (1) | JP6567661B2 (ja) |
CN (1) | CN107005224B (ja) |
WO (1) | WO2016051025A1 (ja) |
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US9695036B1 (en) | 2012-02-02 | 2017-07-04 | Sitime Corporation | Temperature insensitive resonant elements and oscillators and methods of designing and manufacturing same |
US9705470B1 (en) | 2014-02-09 | 2017-07-11 | Sitime Corporation | Temperature-engineered MEMS resonator |
US9712128B2 (en) | 2014-02-09 | 2017-07-18 | Sitime Corporation | Microelectromechanical resonator |
EP3202034B1 (en) * | 2014-10-03 | 2020-05-06 | Teknologian Tutkimuskeskus VTT OY | Temperature compensated compound resonator |
CN107005223B (zh) * | 2014-10-03 | 2021-06-04 | 芬兰国家技术研究中心股份公司 | 温度补偿梁谐振器 |
US10866216B2 (en) * | 2015-12-15 | 2020-12-15 | Qorvo Biotechnologies, Llc | Temperature compensation and operational configuration for bulk acoustic wave resonator devices |
FI127787B (en) * | 2016-07-01 | 2019-02-28 | Teknologian Tutkimuskeskus Vtt Oy | Micromechanical resonator |
US10676349B1 (en) | 2016-08-12 | 2020-06-09 | Sitime Corporation | MEMS resonator |
US10476476B2 (en) * | 2016-12-15 | 2019-11-12 | Murata Manufacturing Co., Ltd. | MEMS resonator with suppressed spurious modes |
FI128032B (en) | 2017-09-05 | 2019-08-15 | Tikitin Oy | Oven-controlled frequency reference oscillator and method for its manufacture |
FI128195B (en) | 2017-09-05 | 2019-12-13 | Tikitin Oy | Frequency reference oscillator device and method for stabilizing a frequency reference signal |
US11824511B2 (en) | 2018-03-21 | 2023-11-21 | Qorvo Us, Inc. | Method for manufacturing piezoelectric bulk layers with tilted c-axis orientation |
US11821872B2 (en) * | 2019-07-19 | 2023-11-21 | University Of Central Florida Research Foundation, Inc. | Acoustoelectric amplification in resonant piezoelectric-semiconductor cavities |
US10958235B2 (en) * | 2019-08-21 | 2021-03-23 | Murata Manufacturing Co., Ltd. | Thickness mode resonator |
US11401601B2 (en) | 2019-09-13 | 2022-08-02 | Qorvo Us, Inc. | Piezoelectric bulk layers with tilted c-axis orientation and methods for making the same |
WO2023070214A1 (en) * | 2021-10-26 | 2023-05-04 | Stathera Ip Holdings Inc. | Microelectromechanical devices for higher order passive temperature compensation and methods of designing thereof |
US20230264946A1 (en) * | 2022-02-21 | 2023-08-24 | Stathera Ip Holdings Inc. | Ultra-High Frequency MEMS Resonators with First and Second Order Temperature-Induced Frequency Drift Compensation |
US11811237B1 (en) | 2022-07-06 | 2023-11-07 | University Of Central Florida Research Foundation, Inc. | System and method for radio frequency power sensing and scavenging based on phonon-electron coupling in acoustic waveguides |
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- 2015-10-02 WO PCT/FI2015/050661 patent/WO2016051025A1/en active Application Filing
- 2015-10-02 CN CN201580064707.1A patent/CN107005224B/zh active Active
- 2015-10-02 EP EP15786990.0A patent/EP3202035B1/en active Active
- 2015-10-02 JP JP2017517790A patent/JP6567661B2/ja active Active
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US9837981B2 (en) | 2017-12-05 |
JP2017531949A (ja) | 2017-10-26 |
CN107005224B (zh) | 2021-06-15 |
EP3202035B1 (en) | 2019-04-10 |
CN107005224A (zh) | 2017-08-01 |
WO2016051025A1 (en) | 2016-04-07 |
EP3202035A1 (en) | 2017-08-09 |
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