JP6564904B2 - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
- Publication number
- JP6564904B2 JP6564904B2 JP2018076500A JP2018076500A JP6564904B2 JP 6564904 B2 JP6564904 B2 JP 6564904B2 JP 2018076500 A JP2018076500 A JP 2018076500A JP 2018076500 A JP2018076500 A JP 2018076500A JP 6564904 B2 JP6564904 B2 JP 6564904B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- substrate
- reaction tube
- substrate processing
- internal reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims description 415
- 238000012545 processing Methods 0.000 title claims description 187
- 239000007789 gas Substances 0.000 claims description 378
- 238000009826 distribution Methods 0.000 claims description 111
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 75
- 230000004308 accommodation Effects 0.000 claims description 60
- 239000010409 thin film Substances 0.000 claims description 51
- 238000002347 injection Methods 0.000 claims description 40
- 239000007924 injection Substances 0.000 claims description 40
- 239000011261 inert gas Substances 0.000 claims description 38
- 239000012495 reaction gas Substances 0.000 claims description 22
- 238000003860 storage Methods 0.000 claims description 16
- 230000002093 peripheral effect Effects 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- 239000010453 quartz Substances 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 238000000926 separation method Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 description 44
- 238000012546 transfer Methods 0.000 description 14
- 238000011109 contamination Methods 0.000 description 8
- 239000002245 particle Substances 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 239000002052 molecular layer Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 208000012868 Overgrowth Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/45504—Laminar flow
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Fluid Mechanics (AREA)
- Chemical Vapour Deposition (AREA)
Description
100:基板処理装置
110:外部チューブ
120:内部の反応チューブ
125:フランジ部
130:基板ボート
131:ロッド
140:ガス供給部
141:ガス分配ライン
142:噴射ノズル
150:排気ダクト
151:第1の排気口
152:第2の排気口
160:ペデスタル
161:熱遮断板
162:支持棒
163:上板
164:下板
165:側面カバー
170:排気ポート
180:ヒータ部
190:チャンバ
190a:上チャンバ
190b:下チャンバ
191:シャフト
192:昇降駆動部
193:回転駆動部
194:支持板
194a:封止部材
194b:軸受け部材
195:嵌合口
200:搬送チャンバ
210:流入口
250:ゲート弁
Claims (12)
- 内部空間を有する外部チューブと、
前記外部チューブの内部空間に前記外部チューブの内側面から離間して配置され、その内部に収容空間を有する内部の反応チューブと、
複数枚の基板が多段に積載され、基板の処理に際して前記内部の反応チューブの収容空間の上段部に収容される基板ボートと、
前記基板ボートを支持し、基板の処理に際して前記内部の反応チューブの収容空間の下段部に収容されるペデスタルと、
前記内部の反応チューブの一方の側に配置されるガス供給部と、
前記内部の反応チューブの他方の側に上下方向に延設されて前記内部の反応チューブの側壁に穿設された排気口と連通される内部流路を形成し、前記内部の反応チューブと前記外部チューブとの間の離隔空間に前記ガス供給部と対向して配置される排気ダクトと、
前記排気ダクトと連通され、前記ペデスタルの収容領域に対応して配置される排気ポートと、
を備え、
前記排気ダクトは、前記内部の反応チューブの収容空間のうち前記ペデスタルの収容領域の外側まで延びており、
前記排気口は、
前記内部の反応チューブの収容空間のうち前記基板ボートの収容領域に対応して位置する第1の排気口と、
前記ペデスタルの収容領域に対応して位置する第2の排気口と、
を備え、
前記第2の排気口は、前記排気ポートと対向する基板処理装置。 - 前記第1の排気口及び前記第2の排気口は、互いに離間して形成される請求項1に記載の基板処理装置。
- 前記排気口は、前記内部の反応チューブの周方向に延びるスリット状又は複数の貫通孔が前記内部の反応チューブの周縁に沿って配列された形状を呈する請求項1に記載の基板処理装置。
- 前記内部の反応チューブの外部に上下方向に延設されて前記内部の反応チューブを加熱し、前記ペデスタルの収容領域の外側まで延びるヒータ部を更に備える請求項1に記載の基板処理装置。
- 前記ペデスタルは、互いに離間して多段に配置される複数枚の熱遮断板を備える請求項1に記載の基板処理装置。
- 前記ガス供給部は、上下方向に延設され、供給される基板処理ガス又は不活性ガスを分配する複数本のガス分配ラインを有し、
前記複数本のガス分配ラインは、前記内部の反応チューブの周縁に沿って一列に配置されてガス分配ラインアレイを形成し、
前記不活性ガスは、前記ガス分配ラインアレイの中央を基準として対称となる複数本の前記ガス分配ラインに供給される請求項1に記載の基板処理装置。 - 前記基板処理ガスは、前記対称となる複数本の前記ガス分配ラインの間に位置する前記ガス分配ラインに供給される請求項6に記載の基板処理装置。
- 前記不活性ガスの流量は、前記内部の反応チューブの内側面と前記基板ボートの側部との間の距離に応じて調節される請求項6に記載の基板処理装置。
- 前記基板処理ガスは、薄膜の成膜のための原料ガス及び前記原料ガスと反応する反応ガスを含み、
前記原料ガス及び前記反応ガスは、この順に供給される請求項6に記載の基板処理装置。 - 前記基板処理ガスは、薄膜の成膜のための原料ガス及び前記原料ガスと反応する反応ガスを含み、
前記原料ガス及び前記反応ガスは、互いに分離されて互いに異なる前記ガス分配ラインに供給される請求項6に記載の基板処理装置。 - 前記ガス供給部は、前記ガス分配ラインの周面に形成され、前記ガス分配ラインの長手方向に沿って一列に配置された複数の噴射ノズルを更に備え、
前記長手方向による前記ガス分配ラインの内部の圧力差は、基板の処理に際して所定の範囲内である請求項6に記載の基板処理装置。 - 前記排気ダクトの素材としてはクォーツが使用され、
前記排気ダクトは、前記内部の反応チューブに一体形に形成される請求項1に記載の基板処理装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020170071633A KR101910085B1 (ko) | 2017-06-08 | 2017-06-08 | 기판처리장치 |
KR10-2017-0071633 | 2017-06-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018207095A JP2018207095A (ja) | 2018-12-27 |
JP6564904B2 true JP6564904B2 (ja) | 2019-08-21 |
Family
ID=64102268
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018076500A Active JP6564904B2 (ja) | 2017-06-08 | 2018-04-12 | 基板処理装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11111580B2 (ja) |
JP (1) | JP6564904B2 (ja) |
KR (1) | KR101910085B1 (ja) |
CN (1) | CN109037095B (ja) |
TW (1) | TWI693300B (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6820816B2 (ja) * | 2017-09-26 | 2021-01-27 | 株式会社Kokusai Electric | 基板処理装置、反応管、半導体装置の製造方法、及びプログラム |
KR102255315B1 (ko) * | 2019-06-17 | 2021-05-25 | 에스케이하이닉스 주식회사 | 기판 처리장치 및 기판 처리방법 |
CN110310909B (zh) * | 2019-07-15 | 2021-12-17 | 北京北方华创微电子装备有限公司 | 冷却装置及热处理装置 |
CN114026267A (zh) * | 2019-07-26 | 2022-02-08 | 株式会社国际电气 | 基板处理装置、半导体装置的制造方法、程序及气体供给系统 |
KR102312364B1 (ko) * | 2019-12-24 | 2021-10-13 | 주식회사 테스 | 기판처리장치 |
US11067897B1 (en) | 2020-05-22 | 2021-07-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Photoresist baking apparatus with cover plate having uneven exhaust hole distribution |
KR102418947B1 (ko) * | 2020-10-26 | 2022-07-11 | 주식회사 유진테크 | 배치식 기판처리장치 |
KR20220143222A (ko) | 2021-04-15 | 2022-10-25 | 삼성전자주식회사 | 박막 증착 장치 및 박막 증착 방법 |
TW202410257A (zh) * | 2022-07-04 | 2024-03-01 | 荷蘭商Asm Ip私人控股有限公司 | 半導體處理設備 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3423131B2 (ja) * | 1995-11-20 | 2003-07-07 | 東京エレクトロン株式会社 | 熱処理装置及び処理装置 |
JPH09213640A (ja) * | 1996-02-05 | 1997-08-15 | Miyagi Oki Denki Kk | 減圧cvd膜生成装置及び方法 |
JPH09330884A (ja) * | 1996-06-07 | 1997-12-22 | Sony Corp | エピタキシャル成長装置 |
JP2006080098A (ja) * | 2002-09-20 | 2006-03-23 | Hitachi Kokusai Electric Inc | 基板処理装置および半導体装置の製造方法 |
JP2004266090A (ja) * | 2003-02-28 | 2004-09-24 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP5284182B2 (ja) * | 2008-07-23 | 2013-09-11 | 株式会社日立国際電気 | 基板処理装置および半導体装置の製造方法 |
JP5589878B2 (ja) * | 2011-02-09 | 2014-09-17 | 東京エレクトロン株式会社 | 成膜装置 |
JP2012178492A (ja) * | 2011-02-28 | 2012-09-13 | Hitachi Kokusai Electric Inc | 基板処理装置およびガスノズルならびに基板若しくは半導体デバイスの製造方法 |
KR101408084B1 (ko) * | 2011-11-17 | 2014-07-04 | 주식회사 유진테크 | 보조가스공급포트를 포함하는 기판 처리 장치 |
JP2014067783A (ja) * | 2012-09-25 | 2014-04-17 | Hitachi Kokusai Electric Inc | 基板処理装置、半導体装置の製造方法及び基板処理方法 |
US9817315B2 (en) * | 2014-03-13 | 2017-11-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | System and method for supplying and dispensing bubble-free photolithography chemical solutions |
JP6270575B2 (ja) | 2014-03-24 | 2018-01-31 | 株式会社日立国際電気 | 反応管、基板処理装置及び半導体装置の製造方法 |
JP6468901B2 (ja) * | 2015-03-19 | 2019-02-13 | 東京エレクトロン株式会社 | 基板処理装置 |
KR101682153B1 (ko) | 2015-04-14 | 2016-12-02 | 주식회사 유진테크 | 기판처리장치 |
JP6605398B2 (ja) * | 2015-08-04 | 2019-11-13 | 株式会社Kokusai Electric | 基板処理装置、半導体の製造方法およびプログラム |
TWI611043B (zh) * | 2015-08-04 | 2018-01-11 | Hitachi Int Electric Inc | 基板處理裝置、半導體裝置之製造方法及記錄媒體 |
KR101710944B1 (ko) * | 2015-09-11 | 2017-02-28 | 주식회사 유진테크 | 기판처리장치 |
KR101668687B1 (ko) | 2015-12-18 | 2016-10-25 | 국제엘렉트릭코리아 주식회사 | 퍼니스형 기판 처리 설비 |
SG11201808114VA (en) * | 2016-03-28 | 2018-10-30 | Kokusai Electric Corp | Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium |
US10883175B2 (en) * | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
-
2017
- 2017-06-08 KR KR1020170071633A patent/KR101910085B1/ko active IP Right Grant
-
2018
- 2018-04-12 JP JP2018076500A patent/JP6564904B2/ja active Active
- 2018-04-24 TW TW107113916A patent/TWI693300B/zh active
- 2018-05-04 CN CN201810423887.3A patent/CN109037095B/zh active Active
- 2018-05-07 US US15/973,241 patent/US11111580B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US11111580B2 (en) | 2021-09-07 |
KR101910085B1 (ko) | 2018-10-22 |
JP2018207095A (ja) | 2018-12-27 |
CN109037095A (zh) | 2018-12-18 |
TWI693300B (zh) | 2020-05-11 |
CN109037095B (zh) | 2022-04-19 |
US20180355481A1 (en) | 2018-12-13 |
TW201903198A (zh) | 2019-01-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6564904B2 (ja) | 基板処理装置 | |
TWI697955B (zh) | 基板處理裝置 | |
KR102207673B1 (ko) | 성막 장치, 성막 방법 및 단열 부재 | |
JP5735304B2 (ja) | 基板処理装置、基板の製造方法、半導体デバイスの製造方法およびガス供給管 | |
KR101691255B1 (ko) | 성막 장치 | |
JP5252457B2 (ja) | 拡散プレートおよび噴射アセンブリを具備するバッチ処理チャンバ | |
KR101827647B1 (ko) | 기판 처리 장치, 가열 장치, 천장 단열체 및 반도체 장치의 제조 방법 | |
JP6151829B2 (ja) | 基板処理装置 | |
JP2008041915A (ja) | 熱処理装置及び熱処理方法 | |
JP6771057B2 (ja) | 基板処理装置及び基板処理方法 | |
KR101917414B1 (ko) | 노즐 및 이를 사용한 기판 처리 장치 | |
KR102421233B1 (ko) | 화학기상증착 장치 | |
JP2007158358A (ja) | 基板処理装置 | |
KR101466816B1 (ko) | 히터 부재 및 그것을 갖는 기판 처리 장치 | |
JP2018085392A (ja) | 基板処理装置 | |
JP2000311862A (ja) | 基板処理装置 | |
JP4645616B2 (ja) | 成膜装置 | |
JP2011035189A (ja) | 基板処理装置 | |
KR102205383B1 (ko) | 기판 처리 장치 및 기판 처리 방법 | |
KR102368157B1 (ko) | 화학기상증착 장치 | |
KR100752148B1 (ko) | 기판 처리 설비 | |
JP2023161239A (ja) | 基板処理装置 | |
CN116949426A (zh) | 一种基片处理装置及腔室内衬 | |
JP2005032929A (ja) | 基板保持具及び基板処理装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190423 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190704 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190716 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190729 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6564904 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |