JP6539919B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP6539919B2
JP6539919B2 JP2017520287A JP2017520287A JP6539919B2 JP 6539919 B2 JP6539919 B2 JP 6539919B2 JP 2017520287 A JP2017520287 A JP 2017520287A JP 2017520287 A JP2017520287 A JP 2017520287A JP 6539919 B2 JP6539919 B2 JP 6539919B2
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Japan
Prior art keywords
protective film
film
thermosetting
chip
forming
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JP2017520287A
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English (en)
Japanese (ja)
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JPWO2016189986A1 (ja
Inventor
尚哉 佐伯
尚哉 佐伯
克彦 堀米
克彦 堀米
裕之 米山
裕之 米山
善男 荒井
善男 荒井
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Lintec Corp
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Lintec Corp
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Publication of JPWO2016189986A1 publication Critical patent/JPWO2016189986A1/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Dicing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)
JP2017520287A 2015-05-25 2016-04-08 半導体装置の製造方法 Active JP6539919B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015105685 2015-05-25
JP2015105685 2015-05-25
PCT/JP2016/061574 WO2016189986A1 (ja) 2015-05-25 2016-04-08 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPWO2016189986A1 JPWO2016189986A1 (ja) 2018-03-15
JP6539919B2 true JP6539919B2 (ja) 2019-07-10

Family

ID=57393938

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017520287A Active JP6539919B2 (ja) 2015-05-25 2016-04-08 半導体装置の製造方法

Country Status (6)

Country Link
JP (1) JP6539919B2 (zh)
KR (1) KR102528047B1 (zh)
CN (1) CN107615453B (zh)
SG (1) SG11201709671YA (zh)
TW (1) TWI683358B (zh)
WO (1) WO2016189986A1 (zh)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6775436B2 (ja) * 2017-02-02 2020-10-28 リンテック株式会社 フィルム状接着剤、半導体加工用シート及び半導体装置の製造方法
CN108091605B (zh) * 2017-12-06 2018-12-21 英特尔产品（成都）有限公司 一种降低晶圆误剥离的方法
KR20200127171A (ko) * 2018-03-07 2020-11-10 린텍 가부시키가이샤 익스팬드 방법, 반도체 장치의 제조 방법, 및 점착 시트
JP6821749B2 (ja) * 2018-07-12 2021-01-27 デクセリアルズ株式会社 ピックアップ装置、実装装置、ピックアップ方法、実装方法
CN109786310A (zh) * 2019-01-14 2019-05-21 东莞记忆存储科技有限公司 粘晶胶纸随晶粒分离的方法
JP2020129639A (ja) * 2019-02-12 2020-08-27 株式会社ディスコ デバイスパッケージ形成方法
JPWO2020195808A1 (zh) * 2019-03-26 2020-10-01
CN109967872B (zh) * 2019-04-23 2021-05-07 苏州福唐智能科技有限公司 一种半导体激光焊接方法及其焊接结构
EP3998127A4 (en) * 2019-08-26 2023-08-16 LINTEC Corporation PROCESS FOR MAKING A LAMINATE
JP7301480B2 (ja) * 2019-10-17 2023-07-03 株式会社ディスコ ウェーハの加工方法
JP7370215B2 (ja) * 2019-10-25 2023-10-27 三菱電機株式会社 半導体装置の製造方法
CN112846534B (zh) * 2020-12-30 2023-03-21 武汉理工氢电科技有限公司 一种3ccm的切割方法
CN116918037A (zh) * 2021-03-08 2023-10-20 琳得科株式会社 半导体装置的制造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001144213A (ja) * 1999-11-16 2001-05-25 Hitachi Ltd 半導体装置の製造方法および半導体装置
JP3544362B2 (ja) * 2001-03-21 2004-07-21 リンテック株式会社 半導体チップの製造方法
US6709953B2 (en) * 2002-01-31 2004-03-23 Infineon Technologies Ag Method of applying a bottom surface protective coating to a wafer, and wafer dicing method
US6908784B1 (en) * 2002-03-06 2005-06-21 Micron Technology, Inc. Method for fabricating encapsulated semiconductor components
US6582983B1 (en) * 2002-07-12 2003-06-24 Keteca Singapore Singapore Method and wafer for maintaining ultra clean bonding pads on a wafer
JP2005191508A (ja) * 2003-12-05 2005-07-14 Rohm Co Ltd 半導体装置およびその製造方法
US8198176B2 (en) * 2007-10-09 2012-06-12 Hitachi Chemical Company, Ltd. Method for producing semiconductor chip with adhesive film, adhesive film for semiconductor used in the method, and method for producing semiconductor device
JP2012079936A (ja) * 2010-10-01 2012-04-19 Nitto Denko Corp ダイシング・ダイボンドフィルム、及び、半導体装置の製造方法
JP5865044B2 (ja) * 2011-12-07 2016-02-17 リンテック株式会社 保護膜形成層付ダイシングシートおよびチップの製造方法
JP5976326B2 (ja) * 2012-01-25 2016-08-23 日東電工株式会社 半導体装置の製造方法、及び、当該半導体装置の製造方法に用いられる接着フィルム
JP5908543B2 (ja) * 2014-08-07 2016-04-26 日東電工株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
TWI683358B (zh) 2020-01-21
KR20180010194A (ko) 2018-01-30
WO2016189986A1 (ja) 2016-12-01
CN107615453A (zh) 2018-01-19
KR102528047B1 (ko) 2023-05-02
TW201642337A (zh) 2016-12-01
SG11201709671YA (en) 2017-12-28
JPWO2016189986A1 (ja) 2018-03-15
CN107615453B (zh) 2020-09-01

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