JP6527690B2 - ウェハ形状物品の表面を処理するための装置 - Google Patents
ウェハ形状物品の表面を処理するための装置 Download PDFInfo
- Publication number
- JP6527690B2 JP6527690B2 JP2014253641A JP2014253641A JP6527690B2 JP 6527690 B2 JP6527690 B2 JP 6527690B2 JP 2014253641 A JP2014253641 A JP 2014253641A JP 2014253641 A JP2014253641 A JP 2014253641A JP 6527690 B2 JP6527690 B2 JP 6527690B2
- Authority
- JP
- Japan
- Prior art keywords
- lid
- heating element
- process chamber
- wafer
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 claims description 58
- 230000008569 process Effects 0.000 claims description 53
- 238000010438 heat treatment Methods 0.000 claims description 48
- 239000007788 liquid Substances 0.000 claims description 29
- 239000004033 plastic Substances 0.000 claims description 11
- 229920003023 plastic Polymers 0.000 claims description 11
- 238000012545 processing Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 229920001774 Perfluoroether Polymers 0.000 claims description 7
- 239000003733 fiber-reinforced composite Substances 0.000 claims description 6
- 239000004812 Fluorinated ethylene propylene Substances 0.000 claims description 4
- 239000002033 PVDF binder Substances 0.000 claims description 4
- 239000004696 Poly ether ether ketone Substances 0.000 claims description 4
- 239000004734 Polyphenylene sulfide Substances 0.000 claims description 4
- 239000004793 Polystyrene Substances 0.000 claims description 4
- 239000004918 carbon fiber reinforced polymer Substances 0.000 claims description 4
- 229920000840 ethylene tetrafluoroethylene copolymer Polymers 0.000 claims description 4
- 229920009441 perflouroethylene propylene Polymers 0.000 claims description 4
- 229920002530 polyetherether ketone Polymers 0.000 claims description 4
- 229920000069 polyphenylene sulfide Polymers 0.000 claims description 4
- -1 polytetrafluoroethylene Polymers 0.000 claims description 4
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 4
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 4
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 3
- 239000004593 Epoxy Substances 0.000 claims description 2
- 229920007925 Ethylene chlorotrifluoroethylene (ECTFE) Polymers 0.000 claims description 2
- 239000004677 Nylon Substances 0.000 claims description 2
- UUAGAQFQZIEFAH-UHFFFAOYSA-N chlorotrifluoroethylene Chemical group FC(F)=C(F)Cl UUAGAQFQZIEFAH-UHFFFAOYSA-N 0.000 claims description 2
- QHSJIZLJUFMIFP-UHFFFAOYSA-N ethene;1,1,2,2-tetrafluoroethene Chemical group C=C.FC(F)=C(F)F QHSJIZLJUFMIFP-UHFFFAOYSA-N 0.000 claims description 2
- HQQADJVZYDDRJT-UHFFFAOYSA-N ethene;prop-1-ene Chemical group C=C.CC=C HQQADJVZYDDRJT-UHFFFAOYSA-N 0.000 claims description 2
- 229920001519 homopolymer Polymers 0.000 claims description 2
- 229920001778 nylon Polymers 0.000 claims description 2
- 229920000728 polyester Polymers 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 claims description 2
- 229920002223 polystyrene Polymers 0.000 claims description 2
- 229920001567 vinyl ester resin Polymers 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 32
- 239000012530 fluid Substances 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 125000005010 perfluoroalkyl group Chemical group 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 229920001780 ECTFE Polymers 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 238000005111 flow chemistry technique Methods 0.000 description 1
- 239000003517 fume Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
Description
プロセスチャンバ内へ下に向いた下面を有する蓋によって閉じられるプロセスチャンバ内に、ウェハ形状物品を位置決めするステップと、
加熱された液体をウェハ形状物品上に分注するステップと、
蓋の下面を、加熱された液体の温度よりも少なくとも5K高い温度に加熱するステップと
を含む方法に関する。
Claims (15)
- ウェハ形状物品を処理するための装置であって、
気密筐体を提供するハウジングを備える密閉型プロセスチャンバと、
前記密閉型プロセスチャンバ内部に位置された回転チャックであって、ウェハ形状物品を上に保持するように適合された回転チャックと、
前記密閉型プロセスチャンバの上部に固定された蓋であって、
前記密閉型プロセスチャンバの内側に向いた下面、および
前記下面を所望の温度に加熱するための少なくとも1つの加熱要素を備える蓋と
を備え、
前記蓋は、
上側プレートと、
前記下面を備え、化学的耐性を有するプラスチックから形成された下側プレートとを備え、
前記少なくとも1つの加熱要素が、前記上側プレートと前記下側プレートとの間に挟持された
装置。 - 前記少なくとも1つの加熱要素が、前記蓋の内側に取り付けられる請求項1に記載の装置。
- 前記蓋の前記下面が前記少なくとも1つの加熱要素によって加熱されるように、前記少なくとも1つの加熱要素が、前記蓋と熱的に接触して取り付けられる請求項1に記載の装置。
- 前記少なくとも1つの加熱要素が、電気加熱層を備える請求項1に記載の装置。
- 前記少なくとも1つの加熱要素が、加熱された液体を供給される熱交換管路を備える請求項1に記載の装置。
- 前記上側プレートは、繊維強化複合材料から形成された請求項1に記載の装置。
- 前記下側プレートが、ポリテトラフルオロエチレン(PTFE)、パーフルオロアルコキシ(PFA)、ポリフェニレンサルファイド(PPS)、ポリエーテルエーテルケトン(PEEK)、ポリスチレン/ポリエチルスチレン(PS/PES)、エチレンテトラフルオロエチレン(ETFE)、ポリフッ化ビニリデン(PVDF)、クロロトリフルオロエチレンのホモポリマー(PCTFE)、フッ化エチレンプロピレン(FEP)、およびエチレンクロロトリフルオロエチレン(ECTFE)からなる群から選択される化学的耐性を有するプラスチックから形成される請求項6に記載の装置。
- 前記上側プレートが、炭素繊維強化プラスチックから形成される請求項6に記載の装置。
- 前記炭素繊維強化プラスチックが、エポキシ、ポリエステル、ビニルエステル、およびナイロンからなる群から選択される結合ポリマーを含む請求項8に記載の装置。
- 請求項1に記載の装置であって、さらに、
液体を選択された温度で前記密閉型プロセスチャンバ内に供給するように構成された液体ディスペンサと、
前記密閉型プロセスチャンバの内部の温度を検出するように位置決めされた少なくとも1つの温度センサと、
前記液体ディスペンサによって供給される加熱された液体の温度よりも少なくとも5K高い温度に前記下面を維持するように前記少なくとも1つの加熱要素を制御する制御装置と
を備える装置。 - ウェハ形状物品を処理するために使用されるプロセスチャンバを閉じるための蓋であって、
前記プロセスチャンバの内側に向いた下面と、
前記下面を所望の温度に加熱するための少なくとも1つの加熱要素と
を備え、
前記蓋が、
上側プレートと、
前記下面を備え、化学的耐性を有するプラスチックから形成された下側プレートと、を備え、
前記少なくとも1つの加熱要素が、前記上側プレートと前記下側プレートとの間に挟持された
蓋。 - 前記少なくとも1つの加熱要素が、電気加熱層を備える請求項11に記載の蓋。
- 前記少なくとも1つの加熱要素が、加熱された液体を供給される熱交換管路を備える請求項11に記載の蓋。
- 前記蓋の前記下面が前記少なくとも1つの加熱要素によって加熱されるように、前記少なくとも1つの加熱要素が、前記蓋の内部に取り付けられ、前記蓋と熱的に接触する請求項11に記載の蓋。
- 前記上側プレートは、繊維強化複合材料から形成された請求項11に記載の蓋。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/145,634 US10043686B2 (en) | 2013-12-31 | 2013-12-31 | Apparatus for treating surfaces of wafer-shaped articles |
US14/145,634 | 2013-12-31 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2015133486A JP2015133486A (ja) | 2015-07-23 |
JP2015133486A5 JP2015133486A5 (ja) | 2018-02-01 |
JP6527690B2 true JP6527690B2 (ja) | 2019-06-05 |
Family
ID=53482644
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014253641A Active JP6527690B2 (ja) | 2013-12-31 | 2014-12-16 | ウェハ形状物品の表面を処理するための装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10043686B2 (ja) |
JP (1) | JP6527690B2 (ja) |
KR (1) | KR102394618B1 (ja) |
CN (1) | CN104752281B (ja) |
TW (1) | TWI651779B (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10043686B2 (en) * | 2013-12-31 | 2018-08-07 | Lam Research Ag | Apparatus for treating surfaces of wafer-shaped articles |
US9597701B2 (en) * | 2013-12-31 | 2017-03-21 | Lam Research Ag | Apparatus for treating surfaces of wafer-shaped articles |
US9657397B2 (en) * | 2013-12-31 | 2017-05-23 | Lam Research Ag | Apparatus for treating surfaces of wafer-shaped articles |
US10167552B2 (en) * | 2015-02-05 | 2019-01-01 | Lam Research Ag | Spin chuck with rotating gas showerhead |
US20230073150A1 (en) * | 2021-09-09 | 2023-03-09 | Applied Materials, Inc. | Heated lid for a process chamber |
US20230268221A1 (en) * | 2022-02-21 | 2023-08-24 | Deviceeng Co., Ltd. | Device for etching the periphery edge of a substrate |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AT389959B (de) | 1987-11-09 | 1990-02-26 | Sez Semiconduct Equip Zubehoer | Vorrichtung zum aetzen von scheibenfoermigen gegenstaenden, insbesondere von siliziumscheiben |
EP0611274B1 (de) | 1993-02-08 | 1998-12-02 | SEZ Semiconductor-Equipment Zubehör für die Halbleiterfertigung AG | Träger für scheibenförmige Gegenstände |
JPH09275088A (ja) * | 1996-04-01 | 1997-10-21 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
US6485531B1 (en) | 1998-09-15 | 2002-11-26 | Levitronix Llc | Process chamber |
TW200819555A (en) * | 2000-09-08 | 2008-05-01 | Tokyo Electron Ltd | Shower head structure, device and method for film formation, and method for cleaning |
JP4720019B2 (ja) * | 2001-05-18 | 2011-07-13 | 東京エレクトロン株式会社 | 冷却機構及び処理装置 |
KR100914988B1 (ko) * | 2001-12-06 | 2009-09-02 | 가부시키가이샤 에바라 세이사꾸쇼 | 기판유지장치 및 폴리싱장치 |
TWI346990B (en) * | 2006-03-08 | 2011-08-11 | Lam Res Ag | Device for fluid treating plate-like articles |
JP4960075B2 (ja) * | 2006-12-18 | 2012-06-27 | 大日本スクリーン製造株式会社 | 基板処理方法および基板処理装置 |
US8821637B2 (en) * | 2007-01-29 | 2014-09-02 | Applied Materials, Inc. | Temperature controlled lid assembly for tungsten nitride deposition |
JP2008311277A (ja) * | 2007-06-12 | 2008-12-25 | Elpida Memory Inc | 成膜処理装置および成膜処理方法 |
JP5238782B2 (ja) * | 2010-09-22 | 2013-07-17 | 株式会社東芝 | 基板の処理装置および基板の処理方法 |
US20130008602A1 (en) * | 2011-07-07 | 2013-01-10 | Lam Research Ag | Apparatus for treating a wafer-shaped article |
US10269615B2 (en) | 2011-09-09 | 2019-04-23 | Lam Research Ag | Apparatus for treating surfaces of wafer-shaped articles |
JP5666414B2 (ja) * | 2011-10-27 | 2015-02-12 | 東京エレクトロン株式会社 | 液処理装置、液処理方法および記憶媒体 |
US8974632B2 (en) * | 2011-11-30 | 2015-03-10 | Lam Research Ag | Device and method for treating wafer-shaped articles |
US8647446B2 (en) * | 2011-12-07 | 2014-02-11 | Intermolecular, Inc. | Method and system for improving performance and preventing corrosion in multi-module cleaning chamber |
US9548223B2 (en) * | 2011-12-23 | 2017-01-17 | Lam Research Ag | Apparatus for treating surfaces of wafer-shaped articles |
JP5975563B2 (ja) * | 2012-03-30 | 2016-08-23 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
US10043686B2 (en) * | 2013-12-31 | 2018-08-07 | Lam Research Ag | Apparatus for treating surfaces of wafer-shaped articles |
-
2013
- 2013-12-31 US US14/145,634 patent/US10043686B2/en active Active
-
2014
- 2014-12-16 JP JP2014253641A patent/JP6527690B2/ja active Active
- 2014-12-24 CN CN201410838073.8A patent/CN104752281B/zh active Active
- 2014-12-26 TW TW103145642A patent/TWI651779B/zh active
- 2014-12-31 KR KR1020140195776A patent/KR102394618B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR102394618B1 (ko) | 2022-05-04 |
TWI651779B (zh) | 2019-02-21 |
US20150187612A1 (en) | 2015-07-02 |
CN104752281B (zh) | 2019-04-02 |
CN104752281A (zh) | 2015-07-01 |
TW201530661A (zh) | 2015-08-01 |
JP2015133486A (ja) | 2015-07-23 |
US10043686B2 (en) | 2018-08-07 |
KR20150079482A (ko) | 2015-07-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6527690B2 (ja) | ウェハ形状物品の表面を処理するための装置 | |
JP6121424B2 (ja) | ウエハ形状物の表面を処理する装置 | |
KR102382682B1 (ko) | 웨이퍼-형상 물체들의 표면들을 처리하기 위한 장치 | |
KR102033804B1 (ko) | 웨이퍼-형상의 물품을 처리하기 위한 디바이스 및 방법 | |
KR20140110970A (ko) | 웨이퍼-형상 물체의 표면을 처리하는 장치 | |
US20130101372A1 (en) | Method and apparatus for processing wafer-shaped articles | |
KR102392271B1 (ko) | 습식-건식 통합된 웨이퍼 프로세싱 시스템 | |
TW201508860A (zh) | 用以固持晶圓狀物件之裝置 | |
TWI649824B (zh) | 晶圓狀物件之表面的處理設備 | |
JP6322450B2 (ja) | ウエハ状物品の表面を処理するための装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20171215 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20171215 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20181219 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20181225 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190322 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190416 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190513 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6527690 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |