JP6523228B2 - 荷電試料面を検査する方法及びデバイス - Google Patents
荷電試料面を検査する方法及びデバイス Download PDFInfo
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Description
1110 開始する段階
1120 試料面の第1の部分内の電位分布を決定する段階
1140 走査プローブ顕微鏡のプローブを用いて試料面の第2の部分を走査する段階
1150 終了する段階
Claims (16)
- 走査プローブ顕微鏡(1060)のプローブ(1070)を用いて静電荷の電位分布(850)を有する試料面(120)を検査する方法であって、
a.前記試料面(120)の少なくとも1つの第1の部分領域(820)の前記静電荷の前記電位分布(850)を決定する段階と、
b.前記試料面(120)の少なくとも1つの第2の部分領域(830)を走査する前に、該試料面(120)の前記少なくとも1つの第1の部分領域(820)内の前記静電荷の前記電位分布(850)を修正し、及び/又は前記走査プローブ顕微鏡(1060)の前記プローブ(1070)の電位を修正する段階と、
を含み、
前記試料面(120)の前記少なくとも1つの第1の部分領域(820)の前記静電荷の前記電位分布(850)の前記決定は、該試料面(120)の該少なくとも1つの第1の部分領域(820)の2次電子のエネルギ分布を分光計(445)を用いて分析する段階を含み、該2次電子は、走査粒子顕微鏡(420)の粒子ビーム(428)を用いて該試料面(120)の該少なくとも1つの第1の部分領域(820)の前記走査中に生成されることを特徴とする方法。 - 段階(b)は、前記試料面(120)の前記少なくとも1つの第1の部分領域(820)内の前記静電荷の前記電位分布(850)の絶対値が第1の閾値を超える場合に実施されることを特徴とする請求項1に記載の方法。
- 前記試料面(120)の前記少なくとも1つの第1の部分領域(820)内の前記静電荷の前記決定された電位分布(850)の絶対値が前記第1の閾値よりも小さいか又はそれに等しい場合に、前記走査プローブ顕微鏡(1060)の前記プローブ(1070)を用いて該試料面(120)の前記少なくとも1つの第2の部分領域(830)を走査する段階を同じく含むことを特徴とする請求項2に記載の方法。
- 前記走査プローブ顕微鏡(1060)の前記プローブ(1070)の前記電位の前記修正は、前記試料面(120)の前記少なくとも1つの第2の部分領域(830)内の前記静電荷の前記決定された電位分布(850)に対応する電圧を該プローブ(1060)に印加する段階を含むことを特徴とする請求項1から請求項3のいずれか1項に記載の方法。
- 前記試料面(120)の前記少なくとも1つの第1の部分領域(820)内の前記静電荷の前記決定された電位分布(850)の前記修正は、荷電粒子ビームを用いて該試料面(120)を照射する段階を含むことを特徴とする請求項1から請求項4のいずれか1項に記載の方法。
- 前記静電荷の前記決定された電位分布(850)の前記修正は、前記試料面(120)の少なくとも前記第1の部分領域(820)にプラズマ放電を印加する段階を含むことを特徴とする請求項1から請求項5のいずれか1項に記載の方法。
- 前記少なくとも1つの第1の部分領域の前記静電荷の前記決定された電位分布(850)に基づいて前記荷電粒子ビームの照射量を固定する段階及び/又は前記プラズマ放電の期間を固定する段階を同じく含むことを特徴とする請求項5又は請求項6に記載の方法。
- 前記試料面(120)の前記少なくとも1つの第1の部分領域(820)内の前記静電荷の前記決定された電位分布(850)を、該少なくとも1つの第1の部分領域(820)の該静電荷の前記決定された電位分布(850)の絶対量が、第1の閾値よりも大きい第2の閾値を超える場合に修正する段階を同じく含むことを特徴とする請求項2に記載の方法。
- a.前記試料面(120)の少なくとも前記第1の部分領域(820)内の前記静電荷の前記決定された電位分布(850)を再度決定する段階、及び
b.前記少なくとも1つの第1の部分領域(820)内の前記静電荷の前記決定された電位分布(850)の絶対値が前記第1の閾値よりも小さいか又はそれに等しい場合に、前記走査プローブ顕微鏡(1060)の前記プローブ(1070)を用いて前記試料面(120)の前記少なくとも1つの第2の部分領域(830)を走査する段階、又は
c.前記試料面(120)の前記少なくとも1つの第1の部分領域(820)内の前記静電荷の前記決定された電位分布(850)の前記絶対値が前記第1の閾値を超え、かつ前記第2の閾値よりも小さい場合に、前記少なくとも1つの第2の部分領域(830)を走査する前記段階の前に、該試料面(120)の該少なくとも1つの第2の部分領域(830)内の該静電荷の該決定された電位分布(850)を再度修正し、及び/又は前記プローブ(1070)の前記電位を修正する段階、
を同じく含むことを特徴とする請求項8に記載の方法。 - 前記試料面(120)の前記少なくとも1つの第1の部分領域(820)は、該試料面(120)の前記少なくとも1つの第2の部分領域(830)を含むことを特徴とする請求項1から請求項9のいずれか1項に記載の方法。
- 前記試料面(120)の前記少なくとも1つの第1の部分領域(820)の前記静電荷の前記電位分布(850)の前記決定は、前記2次電子の前記エネルギ分布の変位を決定する段階を含むことを特徴とする請求項1に記載の方法。
- 前記2次電子の前記エネルギ分布の前記変位の前記決定は、実質的に電位を持たない試料面(120)に対して行われることを特徴とする請求項11に記載の方法。
- 前記2次電子の前記分布の前記変位の前記決定は、前記試料面(120)の前記少なくとも1つの第1の部分領域(820)にわたって電界を印加する段階を含むことを特徴とする請求項11又は請求項12に記載の方法。
- 前記試料面(120)の前記少なくとも1つの第1の部分領域(820)の前記静電荷の前記電位分布(850)の前記決定は、該試料面(120)の該少なくとも1つの第1の部分領域(820)内の後方散乱電子のエネルギ分布の最大値を決定する段階を含み、該後方散乱電子は、該試料面(120)の該少なくとも1つの第1の部分領域(820)の前記走査中に生成されることを特徴とする請求項1から請求項13のいずれか1項に記載の方法。
- 走査プローブ顕微鏡(1060)のプローブ(1070)を用いて静電荷の電位分布(850)を有する試料面(120)を検査するためのデバイス(1000)であって、
装置(1000)が、
a.前記試料面(120)の少なくとも1つの第1の部分領域(820)の前記静電荷の前記電位分布(850)を決定するための手段と、
b.前記試料面(120)の前記少なくとも1つの第1の部分領域(820)内の前記静電荷の前記電位分布(850)の絶対値が第1の閾値を超える場合に、該試料面(120)の少なくとも1つの第2の部分領域(830)を走査する前に、該試料面(120)の該少なくとも1つの第1の部分領域(820)の該静電荷の該電位分布(850)を修正するための手段、及び/又は前記走査プローブ顕微鏡(1060)の前記プローブ(1070)の電位を修正するための手段と、
を含み、
前記試料面(120)の前記少なくとも1つの第1の部分領域(820)の前記静電荷の前記電位分布(850)の前記決定は、該試料面(120)の該少なくとも1つの第1の部分領域(820)の2次電子のエネルギ分布を分光計(445)を用いて分析する段階を含み、該2次電子は、走査粒子顕微鏡(420)の粒子ビーム(428)を用いて該試料面(120)の該少なくとも1つの第1の部分領域(820)の前記走査中に生成される、
ことを特徴とするデバイス(1000)。 - 請求項1から請求項14のいずれか1項に記載の方法段階を実施するように設計されることを特徴とする請求項15に記載のデバイス(1000)。
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DE102015216673A1 (de) | 2015-09-01 | 2017-03-02 | Carl Zeiss Smt Gmbh | Verfahren und Vorrichtungen zum Untersuchen einer elektrisch geladenen Probenoberfläche |
DE102017211957A1 (de) | 2017-07-12 | 2019-01-17 | Carl Zeiss Smt Gmbh | Verfahren und Vorrichtung zum Untersuchen einer Messspitze eines Rastersondenmikroskops |
CN118192160A (zh) * | 2017-07-21 | 2024-06-14 | 卡尔蔡司Smt有限责任公司 | 用于处理光刻掩模的多余材料的方法与设备 |
CN108445310B (zh) * | 2018-06-05 | 2023-10-27 | 沈阳工业大学 | 一种聚合物表面电荷与陷阱能级特性测量装置及方法 |
JP6808700B2 (ja) * | 2018-10-05 | 2021-01-06 | 日本電子株式会社 | 元素マップの生成方法および表面分析装置 |
DE102018009623B4 (de) | 2018-12-07 | 2021-03-18 | Forschungszentrum Jülich GmbH | Verfahren zur elektrischen Untersuchung von elektronischen Bauelementen eines integrierten Schaltkreises |
JP7148714B2 (ja) * | 2019-05-08 | 2022-10-05 | 株式会社日立ハイテク | 荷電粒子ビームシステム、および荷電粒子線装置における観察条件を決定する方法 |
JP7149906B2 (ja) * | 2019-08-07 | 2022-10-07 | 株式会社日立ハイテク | 走査電子顕微鏡及びパタン計測方法 |
JP7237769B2 (ja) * | 2019-08-08 | 2023-03-13 | 株式会社日立ハイテク | 荷電粒子線装置 |
US12091313B2 (en) | 2019-08-26 | 2024-09-17 | The Research Foundation For The State University Of New York | Electrodynamically levitated actuator |
JP7008671B2 (ja) * | 2019-09-13 | 2022-01-25 | 日本電子株式会社 | 荷電粒子線装置および分析方法 |
KR102122295B1 (ko) | 2019-09-16 | 2020-06-12 | 김천재 | 교반기구를 갖는 농약분무기구 |
KR102686691B1 (ko) * | 2020-09-29 | 2024-07-22 | 주식회사 히타치하이테크 | 반도체 검사 장치 및 반도체 시료의 검사 방법 |
US20220238390A1 (en) * | 2021-01-28 | 2022-07-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Manufacturing process with atomic level inspection |
CN113358056B (zh) * | 2021-05-31 | 2023-06-27 | 深圳中科飞测科技股份有限公司 | 工件表面形貌的扫描方法、扫描系统及存储介质 |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0469314A3 (en) * | 1990-07-31 | 1992-06-03 | Siemens Aktiengesellschaft | Method for neutralizing electric charges built up on a specimen in a vacuum chamber |
JPH08195181A (ja) | 1995-01-17 | 1996-07-30 | Toshiba Corp | 走査型電子顕微鏡 |
DE19532838A1 (de) * | 1995-08-28 | 1997-03-06 | Heinz Dr Sturm | Vorrichtung und Verfahren in der kontaktfreien Kraftwechselwirkungs-Mikroskopie zur Kompensation elektrischer Aufladungen und Messung der Höhe und Polarität dieser Aufladungen mit hoher Genauigkeit |
JPH09196929A (ja) * | 1996-01-18 | 1997-07-31 | Canon Inc | 表面観察装置と表面観察方法、記録装置と記録方法、及び再生装置と再生方法 |
US5736863A (en) | 1996-06-19 | 1998-04-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Abatement of electron beam charging distortion during dimensional measurements of integrated circuit patterns with scanning electron microscopy by the utilization of specially designed test structures |
JPH11154479A (ja) * | 1997-11-20 | 1999-06-08 | Hitachi Ltd | 2次電子画像検出方法及びその装置並びに集束荷電粒子ビームによる処理方法及びその装置 |
US6610980B2 (en) | 2000-05-15 | 2003-08-26 | Kla-Tencor Corporation | Apparatus for inspection of semiconductor wafers and masks using a low energy electron microscope with two illuminating beams |
US6507474B1 (en) | 2000-06-19 | 2003-01-14 | Advanced Micro Devices, Inc. | Using localized ionizer to reduce electrostatic charge from wafer and mask |
IL137208A0 (en) * | 2000-07-06 | 2001-07-24 | Yeda Res & Dev | Method for depth profiling of a sample |
JP2002257702A (ja) * | 2001-03-01 | 2002-09-11 | Ulvac Japan Ltd | 帯電試料の除電方法 |
JP4506173B2 (ja) * | 2001-07-12 | 2010-07-21 | 株式会社日立製作所 | 試料帯電測定方法及び荷電粒子線装置 |
WO2003021186A1 (fr) | 2001-08-29 | 2003-03-13 | Hitachi, Ltd. | Procede pour mesurer les dimensions d'un echantillon et microscope electronique a balayage |
JP2005055388A (ja) | 2003-08-07 | 2005-03-03 | Nec Tokin Corp | 帯電防止型試料台 |
JP4644617B2 (ja) * | 2006-03-23 | 2011-03-02 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
JP4812019B2 (ja) | 2006-10-31 | 2011-11-09 | エスアイアイ・ナノテクノロジー株式会社 | 試料操作装置 |
JP5075431B2 (ja) * | 2007-02-28 | 2012-11-21 | 株式会社日立ハイテクノロジーズ | 帯電測定方法、焦点調整方法、及び走査電子顕微鏡 |
JP2008224412A (ja) * | 2007-03-13 | 2008-09-25 | Hitachi Kenki Fine Tech Co Ltd | 走査プローブ顕微鏡 |
JP2009014343A (ja) | 2007-06-29 | 2009-01-22 | Sharp Corp | 走査型プローブ顕微鏡による表面観察方法および走査型プローブ顕微鏡による表面検査装置 |
JP5179253B2 (ja) * | 2008-05-16 | 2013-04-10 | 株式会社日立ハイテクノロジーズ | 電極ユニット、及び荷電粒子線装置 |
JP2010153208A (ja) * | 2008-12-25 | 2010-07-08 | Toppan Printing Co Ltd | 走査型電子顕微鏡のチャージアップ検出方法 |
US7884334B2 (en) * | 2009-01-22 | 2011-02-08 | Hermes Microvision, Inc. | Charged particle beam imaging method and system thereof |
JP5695917B2 (ja) * | 2011-01-26 | 2015-04-08 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
JP2013033671A (ja) * | 2011-08-03 | 2013-02-14 | Hitachi High-Technologies Corp | 荷電粒子線装置 |
WO2013116553A1 (en) * | 2012-01-31 | 2013-08-08 | University Of Utah Research Foundation | Method for height control for single electron tunneling force spectroscopy and dynamic tunneling force microscopy |
JP5453664B1 (ja) | 2013-07-16 | 2014-03-26 | Wafer Integration株式会社 | 自己検知型カンチレバーを用いた走査型探針顕微鏡式プローバ |
DE102015216673A1 (de) | 2015-09-01 | 2017-03-02 | Carl Zeiss Smt Gmbh | Verfahren und Vorrichtungen zum Untersuchen einer elektrisch geladenen Probenoberfläche |
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US10068747B2 (en) | 2018-09-04 |
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