JP6521799B2 - ハロゲン除去方法および半導体装置の製造方法 - Google Patents

ハロゲン除去方法および半導体装置の製造方法 Download PDF

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Publication number
JP6521799B2
JP6521799B2 JP2015170873A JP2015170873A JP6521799B2 JP 6521799 B2 JP6521799 B2 JP 6521799B2 JP 2015170873 A JP2015170873 A JP 2015170873A JP 2015170873 A JP2015170873 A JP 2015170873A JP 6521799 B2 JP6521799 B2 JP 6521799B2
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Japan
Prior art keywords
film
fluorine
halogen
organic solvent
low
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JP2015170873A
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Japanese (ja)
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JP2017050339A5 (https=
JP2017050339A (ja
Inventor
竜一 浅子
竜一 浅子
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2015170873A priority Critical patent/JP6521799B2/ja
Priority to KR1020160106916A priority patent/KR101908192B1/ko
Priority to US15/245,335 priority patent/US9892934B2/en
Publication of JP2017050339A publication Critical patent/JP2017050339A/ja
Publication of JP2017050339A5 publication Critical patent/JP2017050339A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/269—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only pre- or post-treatments, e.g. anti-corrosion processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
    • H10P14/6514—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6903—Inorganic materials containing silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/096—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by contacting with gases, liquids or plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/097—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by thermally treating

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Formation Of Insulating Films (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2015170873A 2015-08-31 2015-08-31 ハロゲン除去方法および半導体装置の製造方法 Active JP6521799B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2015170873A JP6521799B2 (ja) 2015-08-31 2015-08-31 ハロゲン除去方法および半導体装置の製造方法
KR1020160106916A KR101908192B1 (ko) 2015-08-31 2016-08-23 할로겐 제거 방법 및 반도체 장치의 제조 방법
US15/245,335 US9892934B2 (en) 2015-08-31 2016-08-24 Method for removing halogen and method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015170873A JP6521799B2 (ja) 2015-08-31 2015-08-31 ハロゲン除去方法および半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2017050339A JP2017050339A (ja) 2017-03-09
JP2017050339A5 JP2017050339A5 (https=) 2018-07-26
JP6521799B2 true JP6521799B2 (ja) 2019-05-29

Family

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Family Applications (1)

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JP2015170873A Active JP6521799B2 (ja) 2015-08-31 2015-08-31 ハロゲン除去方法および半導体装置の製造方法

Country Status (3)

Country Link
US (1) US9892934B2 (https=)
JP (1) JP6521799B2 (https=)
KR (1) KR101908192B1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7293190B2 (ja) * 2018-03-16 2023-06-19 株式会社半導体エネルギー研究所 半導体装置
WO2022097530A1 (ja) * 2020-11-09 2022-05-12 東京エレクトロン株式会社 基板処理方法および基板処理装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0325934A (ja) 1989-06-23 1991-02-04 Nec Corp 固体表面に吸着したハロゲン含有層の除去方法
JPH0748482B2 (ja) * 1989-10-14 1995-05-24 大日本スクリーン製造株式会社 酸化膜等の被膜除去処理後における基板表面の洗浄方法
JPH05326477A (ja) 1992-05-26 1993-12-10 Ulvac Japan Ltd 半導体基板表面のハロゲン除去方法
JPH07321117A (ja) * 1994-05-25 1995-12-08 Toshiba Corp 半導体基板の処理方法
JP3526961B2 (ja) * 1995-05-24 2004-05-17 松下電器産業株式会社 半導体装置の製造方法
KR19980064028A (ko) 1996-12-12 1998-10-07 윌리엄비.켐플러 금속의 사후 에칭 탈플루오르 저온 공정
JP3932636B2 (ja) * 1997-12-08 2007-06-20 ソニー株式会社 半導体装置の製造方法
JP4482217B2 (ja) * 2000-10-25 2010-06-16 ソニー株式会社 半導体装置用洗浄剤及び半導体装置の洗浄方法
JP2005026277A (ja) * 2003-06-30 2005-01-27 Sony Corp 低誘電率膜の成膜方法
US7713885B2 (en) * 2005-05-11 2010-05-11 Micron Technology, Inc. Methods of etching oxide, reducing roughness, and forming capacitor constructions
CN101242914A (zh) * 2005-06-16 2008-08-13 高级技术材料公司 用于除去硬化的光致抗蚀剂、蚀刻后残留物和/或底部抗反射涂层的稠密流体组合物
JP2007220882A (ja) * 2006-02-16 2007-08-30 Fujitsu Ltd 埋込配線の形成方法
JP5124447B2 (ja) * 2006-04-05 2013-01-23 旭硝子株式会社 デバイス基板の洗浄方法
JP2009010043A (ja) * 2007-06-26 2009-01-15 Tokyo Electron Ltd 基板処理方法，基板処理装置，記録媒体
US8153533B2 (en) 2008-09-24 2012-04-10 Lam Research Methods and systems for preventing feature collapse during microelectronic topography fabrication
JP5064423B2 (ja) * 2009-02-16 2012-10-31 Ｄｏｗａエレクトロニクス株式会社 銀の粒子粉末および分散液

Also Published As

Publication number Publication date
US20170062237A1 (en) 2017-03-02
KR101908192B1 (ko) 2018-10-15
KR20170026180A (ko) 2017-03-08
US9892934B2 (en) 2018-02-13
JP2017050339A (ja) 2017-03-09

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