JP6509888B2 - 電流効率が高い低雑音増幅器(lna) - Google Patents

電流効率が高い低雑音増幅器(lna) Download PDF

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Publication number
JP6509888B2
JP6509888B2 JP2016551310A JP2016551310A JP6509888B2 JP 6509888 B2 JP6509888 B2 JP 6509888B2 JP 2016551310 A JP2016551310 A JP 2016551310A JP 2016551310 A JP2016551310 A JP 2016551310A JP 6509888 B2 JP6509888 B2 JP 6509888B2
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amplifier stage
amplifier
lna
signal
output
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Japanese (ja)
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JP2017506043A (ja
JP2017506043A5 (US07935481-20110503-C00024.png
Inventor
ハサン、ムハンマド
タン、イーウ
バン・ザリンゲ、クラース
ワン、チュアン
パン、ドンリン
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Qualcomm Inc
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Qualcomm Inc
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    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04WWIRELESS COMMUNICATION NETWORKS
    • H04W52/00Power management, e.g. TPC [Transmission Power Control], power saving or power classes
    • H04W52/02Power saving arrangements
    • H04W52/0209Power saving arrangements in terminal devices
    • H04W52/0261Power saving arrangements in terminal devices managing power supply demand, e.g. depending on battery level
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/26Modifications of amplifiers to reduce influence of noise generated by amplifying elements
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High-frequency amplifiers, e.g. radio frequency amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/191Tuned amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G3/00Gain control in amplifiers or frequency changers
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40Circuits
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04WWIRELESS COMMUNICATION NETWORKS
    • H04W88/00Devices specially adapted for wireless communication networks, e.g. terminals, base stations or access point devices
    • H04W88/02Terminal devices
    • H04W88/06Terminal devices adapted for operation in multiple networks or having at least two operational modes, e.g. multi-mode terminals
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/294Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/451Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02DCLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00Reducing energy consumption in communication networks
    • Y02D30/70Reducing energy consumption in communication networks in wireless communication networks

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Amplifiers (AREA)
JP2016551310A 2014-02-14 2015-02-12 電流効率が高い低雑音増幅器(lna) Active JP6509888B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/180,434 2014-02-14
US14/180,434 US9271239B2 (en) 2014-02-14 2014-02-14 Current-efficient low noise amplifier (LNA)
PCT/US2015/015518 WO2015123368A1 (en) 2014-02-14 2015-02-12 Current-efficient low noise amplifier (lna)

Publications (3)

Publication Number Publication Date
JP2017506043A JP2017506043A (ja) 2017-02-23
JP2017506043A5 JP2017506043A5 (US07935481-20110503-C00024.png) 2018-03-01
JP6509888B2 true JP6509888B2 (ja) 2019-05-08

Family

ID=52595455

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016551310A Active JP6509888B2 (ja) 2014-02-14 2015-02-12 電流効率が高い低雑音増幅器(lna)

Country Status (7)

Country Link
US (1) US9271239B2 (US07935481-20110503-C00024.png)
EP (1) EP3105851B1 (US07935481-20110503-C00024.png)
JP (1) JP6509888B2 (US07935481-20110503-C00024.png)
KR (1) KR20160122191A (US07935481-20110503-C00024.png)
CN (1) CN105993128B (US07935481-20110503-C00024.png)
BR (1) BR112016018578B1 (US07935481-20110503-C00024.png)
WO (1) WO2015123368A1 (US07935481-20110503-C00024.png)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102196752B1 (ko) * 2014-08-12 2020-12-30 삼성전자주식회사 캐리어 통합 신호를 송수신하는 장치
US9431963B2 (en) 2014-09-19 2016-08-30 Qualcomm Incorporated Dual stage low noise amplifier for multiband receiver
US20170187338A1 (en) * 2015-12-23 2017-06-29 Qualcomm Incorporated Amplifier with coupled inductors
US10177722B2 (en) 2016-01-12 2019-01-08 Qualcomm Incorporated Carrier aggregation low-noise amplifier with tunable integrated power splitter
JP6853361B2 (ja) * 2016-08-30 2021-03-31 スカイワークス ソリューションズ, インコーポレイテッドSkyworks Solutions, Inc. プログラム可能位相利得段を有する低雑音増幅器
WO2018045024A1 (en) * 2016-08-31 2018-03-08 Skyworks Solutions, Inc. Multi-input amplifier with degeneration switching block and low loss bypass function
US9800273B1 (en) * 2017-03-01 2017-10-24 Qualcomm Incorporated Wideband high linearity LNA with intra-band carrier aggregation support
US10772052B2 (en) 2017-06-16 2020-09-08 Qualcomm Incorporated Controlling coexistent radio systems in a wireless device
US20200099342A1 (en) * 2018-09-20 2020-03-26 Qualcomm Incorporated Multi-mode hybrid radio frequency (rf) power amplifier with driver amplifier bypass
TWI733166B (zh) 2019-08-16 2021-07-11 瑞昱半導體股份有限公司 無線收發裝置
CN110677167B (zh) * 2019-09-30 2021-08-24 上海华虹宏力半导体制造有限公司 低电压射频前端结构
US11728838B2 (en) * 2021-09-21 2023-08-15 Qualcomm Incorporated Isolating down-conversion mixer for a radio frequency (RF) transceiver

Family Cites Families (19)

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US6107878A (en) 1998-08-06 2000-08-22 Qualcomm Incorporated Automatic gain control circuit for controlling multiple variable gain amplifier stages while estimating received signal power
CA2361298C (en) 2000-11-08 2004-10-12 Research In Motion Limited Impedance matching low noise amplifier having a bypass switch
US6838933B2 (en) 2002-10-02 2005-01-04 Northrop Grumman Corporation Low noise amplifier with fixed loss bypass
US7110742B2 (en) * 2004-03-16 2006-09-19 Broadcom Corporation Low noise amplifier with constant input impedance
US7167044B2 (en) 2004-05-10 2007-01-23 University Of Florida Research Foundation, Inc. Dual-band CMOS front-end with two gain modes
US8121564B2 (en) * 2006-03-06 2012-02-21 Broadcom Corporation Radio receiver with shared low noise amplifier for multi-standard operation in a single antenna system with loft isolation and flexible gain control
US7719352B2 (en) 2007-03-13 2010-05-18 Qualcomm Incorporated Active circuits with isolation switches
US10826450B2 (en) 2007-04-17 2020-11-03 HuWoMobility, Inc. Hybrid concurrent and switched dual-band low noise amplifier
US7696828B2 (en) * 2008-01-04 2010-04-13 Qualcomm, Incorporated Multi-linearity mode LNA having a deboost current path
JP2009260405A (ja) * 2008-04-11 2009-11-05 New Japan Radio Co Ltd 低雑音増幅器
JP2009283845A (ja) * 2008-05-26 2009-12-03 Npc Inc 太陽電池出力特性評価装置および太陽電池出力特性評価方法
JP2011066825A (ja) 2009-09-18 2011-03-31 Toshiba Corp 増幅器および通信装置
KR101703863B1 (ko) 2010-03-17 2017-02-07 엘지전자 주식회사 반송파 집성을 위한 릴레이 rf의 구조 및 방법
EP2387159A1 (en) * 2010-05-12 2011-11-16 Imec Reconfigurable receiver architectures
JP5769977B2 (ja) * 2011-01-20 2015-08-26 Dxアンテナ株式会社 共同受信システム用増幅器
US20130043946A1 (en) 2011-08-16 2013-02-21 Qualcomm Incorporated Low noise amplifiers with combined outputs
GB201119888D0 (en) 2011-11-17 2011-12-28 Renesas Mobile Corp Methods of receiving and receivers
US9154356B2 (en) * 2012-05-25 2015-10-06 Qualcomm Incorporated Low noise amplifiers for carrier aggregation
US20140015607A1 (en) 2012-07-10 2014-01-16 Mstar Semiconductor, Inc. Low noise amplifiers for multiple radio standards

Also Published As

Publication number Publication date
US9271239B2 (en) 2016-02-23
CN105993128B (zh) 2019-01-18
BR112016018578B1 (pt) 2022-11-08
CN105993128A (zh) 2016-10-05
KR20160122191A (ko) 2016-10-21
US20150237583A1 (en) 2015-08-20
JP2017506043A (ja) 2017-02-23
EP3105851B1 (en) 2018-04-25
BR112016018578A2 (US07935481-20110503-C00024.png) 2017-08-08
WO2015123368A1 (en) 2015-08-20
EP3105851A1 (en) 2016-12-21

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