JP6494539B2 - Solid-state imaging device and manufacturing method thereof - Google Patents

Description

  The present invention relates to a solid-state imaging device and a manufacturing method thereof, and more particularly, to a solid-state imaging device including a charge coupled device (CCD) and a manufacturing method thereof.

  A conventional solid-state imaging device includes a pixel array, a CCD, and an FDA (Floating Diffusion Amplifier) as components. In such a solid-state imaging device, the total capacity is adjusted by directly connecting an electric capacity to an FD (Floating Diffusion) part included in the FDA. Thus, the dynamic range of the solid-state imaging device is expanded by adjusting the charge conversion coefficient of the FDA (see, for example, Patent Document 1).

JP 2000-165755 A

  In the conventional solid-state imaging device, there is a problem that when the miniaturization of the FDA progresses, the reduction of the parallel capacitance component of the capacitance of the FD portion reaches its peak. There is also a problem that there is no place for directly connecting the electric capacity to the FD section.

  Therefore, the present invention reduces the capacitance of the FD section even in a miniaturized FDA, improves the charge conversion coefficient, and controls the charge conversion coefficient according to the signal charge amount, thereby achieving a high sensitivity and dynamic range. An object is to provide a wide solid-state imaging device.

One form of the invention is:
A solid-state imaging device that detects an image using photoelectric conversion,
A plurality of first transfer electrodes formed at intervals in the first direction on a first insulating film provided on a silicon substrate having a photoelectric conversion unit, and a first transfer electrode provided on the first transfer electrode 2 having a plurality of second transfer electrodes formed on the insulating film at intervals in the first direction, and using the first transfer electrodes and the second transfer electrodes, the charges generated in the photoelectric conversion unit are A charge coupled device to be transferred;
A floating diffusion formed on a silicon substrate and storing charges transferred from the charge coupled device, a wiring layer provided on a third insulating film formed on the floating diffusion, and formed on the wiring layer the fourth and a conductive film provided on the insulating film, the floating diffusion is connected to the wiring layer includes a floating diffusion amplifier having capacitance C ₁ between the wiring layer and the conductive film,
Floating diffusion amplifier is further a solid state imaging device which comprises a series capacitor connected in series with the capacitor C _1.

  Another embodiment of the present invention is a method for manufacturing such a solid-state imaging device.

  In the solid-state imaging device according to the present invention, it is possible to improve the charge conversion coefficient by adding the series capacitance to reduce the FD capacitance included in the output amplifier, and to obtain a solid-state imaging device with high sensitivity and a wide dynamic range. it can.

1 is a perspective view illustrating an outline of a solid-state imaging device according to a first embodiment of the present invention. It is a top view of the pixel contained in the solid-state imaging device shown in FIG. It is sectional drawing at the time of seeing the pixel shown to FIG. 2A in the arrow AA direction. It is sectional drawing at the time of seeing the pixel shown to FIG. 2A in the arrow BB direction. It is a fragmentary sectional view of the conventional solid-state imaging device. It is a fragmentary sectional view of the solid-state imaging device concerning Embodiment 1 of the present invention, and the capacity between transfer electrodes is added. It is a fragmentary sectional view of the other solid-state imaging device concerning Embodiment 1 of this invention, and the capacity | capacitance between wiring layers-light shielding films is added. It is a circuit diagram for calculating FD capacity contained in FDA of the conventional solid-state imaging device. It is a circuit diagram for calculating FD capacity contained in FDA of the solid-state imaging device concerning Embodiment 1 of the present invention. It is sectional drawing of the manufacturing process of the solid-state imaging device in Embodiment 1 of this invention. It is a fragmentary sectional view of the solid-state imaging device concerning Embodiment 2 of the present invention, and PN junction capacity is added. FIG. 7 is a circuit diagram for calculating an FD capacity included in an output FDA of a solid-state imaging device according to a second embodiment of the present invention. It is sectional drawing of the manufacturing process of the solid-state imaging device in Embodiment 2 of this invention.

  Embodiments of the present invention will be described below with reference to the drawings. In each figure, the same code | symbol shows the same or an equivalent location. In order to avoid the description from becoming unnecessarily redundant and facilitate the understanding of those skilled in the art, the description of the already well-known content or the overlapping content may be omitted. The contents of the following description and the accompanying drawings are not intended to limit the subject matter recited in the claims.

Embodiment 1 FIG.
FIG. 1 is a perspective view schematically showing the solid-state imaging device according to the first embodiment of the present invention, the whole being represented by 300. The solid-state imaging device 300 includes a silicon substrate 302. On the silicon substrate 302, a pixel array 501 in which a plurality of pixels 502 are arranged in a plurality of columns and a pixel 502 in the pixel array 501 are sequentially selected, and signal charges generated in the pixels 502 are externally provided. And a signal processing circuit 520 for reading. 1 illustrates the case where the signal processing circuit 520 is formed on the silicon substrate 302, the present invention is not limited to this, and the signal processing circuit 520 may be provided separately.

  The pixel array 501 includes a vertical CCD 509 that transfers signal charges generated in the pixels 502 due to the internal photoelectric effect in the vertical direction of the pixel array 501 (indicated as “Y-axis direction” in the drawing), and a signal charge transferred by the vertical CCD 509. Of the pixel array 501 in a horizontal direction orthogonal to the vertical direction (referred to as “X-axis direction” in the drawing), and an output amplifier 508 that converts the transferred signal charge into a voltage. . The output amplifier 508 is an FDA (Floating Diffusion Amplifier). In the pixel array 501 of FIG. 1, the pixels 502 are arranged two-dimensionally, but may be arranged one-dimensionally.

  The pixel 502 will be described with reference to FIGS. 2A, 2B, and 2C. 2A is a plan view of the pixel 502 included in the solid-state imaging device 300 shown in FIG. 1, and FIGS. 2B and 2C show the case where the pixel 502 is viewed in the directions of arrows AA and BB, respectively. It is sectional drawing. In FIG. 2A, the vertical direction is the vertical direction, and the horizontal direction is the horizontal direction. In FIG. 2B, the direction perpendicular to the paper surface is the vertical direction, and the left-right direction is the horizontal direction.

  The pixel 502 is formed in each electrode (not shown), the photoelectric conversion unit 503 that converts incident light into a signal charge, and interference between the pixel 502 adjacent in the horizontal direction. And pixel separation 504 for preventing the above. A first insulating film 304, a first transfer electrode 511, a second insulating film 305, and a second transfer electrode 512 are sequentially stacked on the silicon substrate 302, and a third insulating film 306 and a fourth insulating film are formed thereon. 307 is provided. A vertical CCD 509 is configured by arranging such pixels 502 in a line in the vertical direction. In the vertical CCD 509, as shown in FIG. 2C, the first transfer electrode 511 and the second transfer electrode 512 are repeatedly arranged in the horizontal direction, and a portion indicated by 502 is one pixel.

  Next, the output amplifier of the solid-state imaging device will be described with reference to FIGS. FIG. 3 is a partial cross-sectional view in the vicinity of the output amplifier of the conventional solid-state imaging device, and FIGS. 4 and 5 are partial cross-sectional views in the vicinity of the output amplifier of the solid-state imaging device 300 according to the first embodiment of the present invention. .

  As shown in FIG. 3, FIG. 4, and FIG. 5, the output amplifier of the solid-state imaging device is provided at the end (see FIG. 1) of the horizontal CCD 510 that transfers the charges transferred from the vertical CCD 509 in the horizontal direction. Yes. In the output amplifier, a silicon substrate 302 is provided with an FD (Floating Diffusion) unit 533 that receives and accumulates signal charges transferred from the horizontal CCD 510. By converting the charge accumulated in the FD unit 533 into a voltage by a source follower amplifier (not shown), an output voltage proportional to the amount of signal charge accumulated in the FD unit 533 can be obtained. A proportional coefficient of a linear function representing the relationship between the signal charge amount and the output voltage is called a charge conversion coefficient.

In the FDA type output amplifier, a wiring layer 507 connected to the FD portion 533 is provided in an insulating film provided on the silicon substrate 302, and a light shielding film 513 is provided on the insulating film. ing. The wiring layer 507 is connected to the FD portion 533 to extract an output signal, and the light shielding film 513 prevents unnecessary light from entering the FD portion 533 and generating charges. Since the light shielding film 513 is formed of a metal film or a conductive organic film, an electric capacity is formed between the light shielding film 513 and the wiring layer 507 connected to the FD portion 533 to increase the FD capacity. Here, the sum of all capacitors connected to the FD unit 533 including the parasitic capacitance is referred to as FD capacitance (C _total ).

  In the conventional solid-state imaging device shown in FIG. 3, when light emitted from a subject to be imaged enters a pixel in the pixel array, the silicon substrate 302 causes a number corresponding to the amount of incident light by the internal photoelectric effect. Electron hole pairs (the signal charges described above) are generated.

  Here, a region in the silicon substrate 302 where light is incident and electron-hole pairs are generated is referred to as a photoelectric conversion unit 503. For each pixel, this signal charge (in many cases, electrons) is transferred through a vertical CCD and a horizontal CCD, and converted into a voltage by an output amplifier to obtain a captured image of the subject.

  In the solid-state imaging device 300 according to the first embodiment of the present invention, as shown in FIGS. 4 and 5, in addition to the conventional structure, the light shielding film 513 includes an inter-wiring capacitance or a MOS (Metal Oxide Semiconductor) capacitance. A fixed capacity such as is connected.

Specifically, in FIG. 4, the fixed capacitance is a capacitance (C ₂ ) between the first transfer electrode 511 and the second transfer electrode 512 formed using the first transfer electrode 511 and the second transfer electrode 512. In this case, the second transfer electrode 512 is connected to the light shielding film 513 by the wiring layer 507. 5 shows a capacitance (C ₃ ) between the wiring layer 507 and the light shielding film 513 formed by using the wiring layer 507 and the light shielding film 513.

6, a circuit diagram for calculating the FD capacitance C _total of the conventional solid-state imaging device, in Figure 7, the circuit for calculating the FD capacitance C _total of the solid-state imaging device according to a first embodiment of the present invention Each figure is shown. 6 and 7, the capacitance (C ₁ ) between the wiring layer 507 and the light shielding film 513 is C _1M-ref , the fixed capacitances (C ₂ , C ₃ ) are C _fix , and further C _1M-ref and C _{fix are} Let the remaining FD capacity excluding and be the _other . Further, the potential of the FD portion 533 is V _FD , the potential of the light shielding film 513 is V _ref , and the potential of the electrode (511 in FIG. 4 and 507 in FIG. 5) opposite to the electrode connected to the light shielding film in the fixed capacitor is V _fix . To do. However, in FIG. 7, the parasitic capacitance between the light shielding film 513 and the silicon substrate 302 is sufficiently smaller than C _fix .

Here, for simplicity of calculation, the potential _{V fix} potential _{V ref} and 7 of Figure 6, the potentials of the silicon substrate 302 (fixed potential: 0V) When equal, the FD capacitance _{C total,} 6 The following equation 1 is established in the circuit of FIG. 7, and the following equation 2 is established in the circuit of FIG.

As can be seen from Equations 1 and 2, the value of the FD capacitance C _total is smaller in Equation 2 than in Equation 1. That is, rather than connecting the light shielding film 513 directly to the fixed potential as in the prior art, it is more preferable to connect to the fixed potential via the fixed capacitors (C ₂ , C ₃ ) as in the first embodiment of the present invention. The FD capacity C _total becomes small. As a result of the FD capacitance C _total being reduced, the charge conversion coefficient is improved and the output amplifier becomes highly sensitive. Thereby, the solid-state imaging device 300 with high sensitivity can be provided.

In particular, regarding the reduction of the FD capacitance C _total, the reduction of the parallel capacitance reaches its peak when the FDA is miniaturized, but the addition of the series capacitance as in the first embodiment of the present invention is based on the FDA. Since the capacitors C ₂ and C ₃ may be formed in separate areas, a miniaturized structure is also possible.

  Next, a method for manufacturing the solid-state imaging device 300 according to the first embodiment of the present invention will be described. FIG. 8 is a cross-sectional view of the manufacturing process of the solid-state imaging device 300, and is a cross-sectional view of the vicinity of the FD capacitor along the horizontal direction. In FIG. 8, the same reference numerals as those in FIGS. 2A to 2C indicate the same or corresponding portions.

  First, as shown in FIG. 1A, a silicon substrate 302 is prepared. Next, an impurity diffusion layer is selectively formed from the surface of the silicon substrate 302 by using an impurity diffusion method or an ion implantation method, and a vertical CCD 509 (not shown) and a horizontal CCD 510 are formed. Next, an isolation oxide film (not shown) is formed at a predetermined position by LOCOS (LOCal Oxidation of Silicon) isolation method or trench isolation method.

Subsequently, as shown in FIG. 8B, a first insulating film 304 is formed on the silicon substrate 302. The first insulating film 304 is made of, for example, silicon oxide. Next, the first transfer electrode 511 is formed on the first insulating film 304 with an interval in the vertical direction. The first transfer electrode 511 is made of, for example, polycrystalline silicon. The first transfer electrode 511 extends in the vertical direction. At this time, a lower electrode of the fixed capacitor C ₂ is formed from a part of the first transfer electrode 511.

Subsequently, as shown in FIG. 8C, the first transfer electrode 511 is oxidized from the surroundings to form a second insulating film 305. Next, a second transfer electrode 512 is formed on the second insulating film 305. The second transfer electrode 512 is made of, for example, polycrystalline silicon. Similarly to the first transfer electrode 511, the second transfer electrode 512 extends in the vertical direction. The first transfer electrodes 511 and the second transfer electrodes 512 are alternately arranged as shown in FIG. 2C, for example. At this time, an upper electrode of the fixed capacitor C ₂ is formed from a part of the second transfer electrode 512. Next, the FD portion 533 is selectively formed in a region where the output amplifier 508 is formed on the silicon substrate 302 by using an impurity diffusion method or an ion implantation method.

Subsequently, as shown in FIG. 8D, a third insulating film 306 is formed on the silicon substrate 302 (on the second insulating film 305, the first transfer electrode 511, and the second transfer electrode 512). A wiring layer 507 is formed on the third insulating film 306. Part of the wiring layer 507 is connected to the second transfer electrode 512 is the upper electrode of the FD portion 533 and the fixed capacitance _{C 2} lower. At this time, the lower electrodes of the capacitor C ₁ and the fixed capacitor C ₃ are formed from a part of the wiring layer 507. Next, a fourth insulating film 307 is formed on the wiring layer 507.

Finally, a light shielding film (conductive film) 513 is formed on the fourth insulating film 307. The light shielding film 513 is formed from a metal film or a conductive organic film. Shielding film 513 is also connected to the wiring layer 507 connected to the upper electrode of the capacitor C _2. At this time, the upper electrodes of the capacitor C ₁ and the fixed capacitor C ₃ are formed from a part of the light shielding film 513.

The FD capacity of the solid-state imaging device 300 according to the first embodiment of the present invention is completed through the above steps. In the manufacturing process of FIG. 8, both the fixed capacitors C ₂ and C ₃ are formed. However, as shown in FIGS. 4 and 5, only one of the fixed capacitors may be formed.

Embodiment 2. FIG.
FIG. 9 is a partial cross-sectional view of the vicinity of the output amplifier 508 of the solid-state imaging device according to the second embodiment of the present invention. 9, the same reference numerals as those in FIG. 4 indicate the same or corresponding portions.

As shown in FIG. 9, in the solid-state imaging device according to the second embodiment of the present invention, a variable capacitor C _{4 including} a PN junction capacitor is connected to the light shielding film 513. Specifically, the variable capacitor C ₄ includes a PN junction capacitor formed from the N-type impurity diffusion layer 532 and the silicon substrate 302.

FIG. 10 is a circuit diagram for calculating the FD capacity of the solid-state imaging device according to the second embodiment of the present invention. In the circuit diagram of FIG. 10, the voltage input terminal for setting the capacitance value of the variable capacitor is Φ _ref , the switch is SW, the variable capacitor is C _var , and the potential of the electrode facing the electrode connected to the light shielding film in the variable capacitor is Let V _var . The switch SW is turned on when the capacitance value C _var of the variable capacitor C ₄ is set, and is turned off when the electric charge is accumulated in the FD capacitor and converted into a voltage. The other configuration is the same as the circuit diagram shown in FIG. However, in FIG. 10, the parasitic capacitance between the light shielding film 513 and the silicon substrate 302 is assumed to be sufficiently smaller than _Cvar .

Here, in order to simplify the calculation, it is assumed that the potential V _var of the electrode facing the electrode connected to the light shielding film in the variable capacitor is equal to the potential of the silicon substrate 302 (fixed potential: 0 V). In this case, the following Expression 3 is established for the FD capacitance C _total .

As can be seen by comparing the expression 1 above showing the FD capacitance _{C total} of the conventional solid-state imaging device, the FD capacitor _{C total} is towards the formula 3 is smaller than the formula 1. That is, rather than connecting the light shielding film 513 directly to the fixed potential as in the conventional case, the FD capacitor C is more connected to the fixed potential via the variable capacitor (C ₄ ) as in the second embodiment of the present invention. _{The total} becomes smaller. As a result of the FD capacitance C _total being reduced, the charge conversion coefficient is improved and the sensitivity is increased.

Further, in the solid-state imaging device according to the second exemplary embodiment of the present invention, the voltage applied to the light shielding film 513 is changed by changing the input voltage from the voltage input terminal Φ _{ref in} FIG. ₄ capacity can be controlled. When the capacitance value of the variable capacitor C ₄ changes, the FD capacitor C _total also changes from the relationship of Equation 3. That is, the charge conversion coefficient can be controlled by the Φ _ref voltage. As a result, it is possible to provide a solid-state imaging device with an expanded dynamic range of the output amplifier, high sensitivity, and a wide dynamic range.

  Next, a method for manufacturing the solid-state imaging device according to the second embodiment of the present invention will be described. FIG. 11 is a cross-sectional view of the manufacturing process of the solid-state imaging device, and shows a cross-sectional view of the vicinity of the FD capacitor along the horizontal direction. 11, the same reference numerals as those in FIG. 8 denote the same or corresponding parts.

The manufacturing steps shown in FIGS. 11A to 11D are almost the same as the manufacturing steps shown in FIGS. However, without forming a fixed capacitance _{C 2} is in the process of FIG. 11 (b), instead, the silicon substrate 302 in the step of FIG. 11 (c), the N-type impurity diffusion layers 532 for the PN junction capacitance _{C 4} Form. The N-type impurity diffusion layer 532 is formed by the impurity diffusion method or the ion implantation method in the same process as the FD portion 533.

  A wiring layer 507 is connected to the N-type impurity diffusion layer 532, and a light shielding film 513 is further connected thereon. The solid-state imaging device according to the second embodiment of the present invention is completed through the above steps.

  In the first and second embodiments of the present invention, the pixel is described using a non-opening electrode type pixel having no opening in the transfer electrode. However, an opening electrode type pixel having an opening in the transfer electrode is used. It doesn't matter.

  In the first and second embodiments of the present invention, the CCD image sensor is used as the configuration and operation method of the image sensor, but it goes without saying that a CMOS (Complementary MOS) image sensor may be used.

  Furthermore, there are two types of solid-state imaging devices: a panchromatic detector that detects the entire light region, and a multiband detector that detects the light region by dividing it into several bands by placing a color filter above it. is there. Embodiments 1 and 2 of the present invention are intended for both panchromatic detectors and multiband detectors.

  Also, the solid-state imaging device can be classified into two types depending on the signal charge readout method. One is an area sensor in which a vertical CCD 509 and a photoelectric conversion unit 503 are arranged in parallel, and is a detector used when the readout method is frame transfer or interline transfer. The other is a line sensor in which the vertical CCD 509 includes a photoelectric conversion unit 503, and a detector used when the readout method is TDI (Time Delay Integration). Embodiments 1 and 2 of the present invention target both area sensors and line sensors.

  300 solid-state imaging device, 302 silicon substrate, 304 first insulating film, 305 second insulating film, 306 third insulating film, 307 fourth insulating film, 501 pixel array, 502 pixels, 503 photoelectric conversion unit, 504 pixel separation, 507 Wiring layer, 508 output amplifier, 509 vertical CCD, 510 horizontal CCD, 511 first transfer electrode, 512 second transfer electrode, 513 light shielding film, 520 signal processing circuit, 532 N-type impurity diffusion layer, 533 FD section.

Claims (6)

A solid-state imaging device that detects an image using photoelectric conversion,
A plurality of first transfer electrodes formed on the first insulating film provided on the silicon substrate having the photoelectric conversion portion at intervals in the first direction, and provided on the first transfer electrodes. A plurality of second transfer electrodes formed on the second insulating film at intervals in the first direction, and the photoelectric conversion unit using the first transfer electrode and the second transfer electrode A charge coupled device to which the generated charge is transferred;
A floating diffusion formed on the silicon substrate and storing charges transferred from the charge coupled device; a wiring layer provided on a third insulating film formed on the floating diffusion; and and a fourth conductive film provided on an insulating film formed above the floating diffusion is connected to the wiring layer, a floating diffusion with a capacity C ₁ between the wiring layer and the conductive film An amplifier, and
The floating diffusion amplifier further comprises a series capacitor connected in series with the capacitive C _1,
The series capacitor is a fixed capacitance C ₂ which is formed between the first transfer electrodes and the second transfer electrodes,
A solid-state imaging device , wherein the second transfer electrode , the second wiring layer , and the conductive film are connected to each other . A solid-state imaging device that detects an image using photoelectric conversion,
A plurality of first transfer electrodes formed on the first insulating film provided on the silicon substrate having the photoelectric conversion portion at intervals in the first direction, and provided on the first transfer electrodes. A plurality of second transfer electrodes formed on the second insulating film at intervals in the first direction, and the photoelectric conversion unit using the first transfer electrode and the second transfer electrode A charge coupled device to which the generated charge is transferred;
A floating diffusion formed on the silicon substrate and storing charges transferred from the charge coupled device; a wiring layer provided on a third insulating film formed on the floating diffusion; and and a fourth conductive film provided on an insulating film formed above the floating diffusion is connected to the wiring layer, a floating diffusion with a capacity C ₁ between the wiring layer and the conductive film An amplifier, and
The floating diffusion amplifier further comprises a series capacitor connected in series with the capacitive C _1,
The series capacitance is a variable capacitance C ₄ is formed from the junction capacitance of the PN junction diode provided on the silicon substrate,
A solid-state imaging device, wherein a P-type region or an N-type region of the PN junction diode, a second wiring layer, and the conductive film are connected to each other . Claims P-type region or the N-type region of the PN junction diode and the conductive film are connected by connection wires, characterized in that changing the capacitance of the variable capacitance C ₄ by controlling the electric potential of the connecting wiring Item 3. The solid-state imaging device according to Item 2 .   The solid-state imaging device according to claim 1, wherein the conductive film is a light shielding film that shields the floating diffusion amplifier. A method of manufacturing a solid-state imaging device having a charge coupled device and a floating diffusion amplifier,
Preparing a silicon substrate;
Forming a photoelectric conversion part on the silicon substrate;
Forming a first insulating film on the silicon substrate;
Forming a first transfer electrode on the first insulating film;
Forming a second insulating film on the first transfer electrode;
To form a second transfer electrode on the second insulating film, forming a fixed capacitor C ₂ and the first transfer electrodes and the second transfer electrode disposed face to face,
Forming a floating diffusion on the silicon substrate;
Forming a third insulating film on the second transfer electrode;
Forming first and second wiring layers on the third insulating film, connecting the floating diffusion and the first wiring layer, and connecting the second transfer electrode and the second wiring layer to each other; Connecting, and
Forming a fourth insulating film on said first wiring layer and the second wiring layer,
And forming a conductive film over the fourth insulating film, forming a capacitor C ₁ between the first wiring layer and the conductive film which is connected to the floating diffusion,
And a step of connecting the second wiring layer connected to the second transfer electrode and the conductive film. A method of manufacturing a solid-state imaging device having a charge coupled device and a floating diffusion amplifier,
Preparing a silicon substrate;
Forming a photoelectric conversion part on the silicon substrate;
Forming a first insulating film on the silicon substrate;
Forming a first transfer electrode on the first insulating film;
Forming a second insulating film on the first transfer electrode;
Forming a second transfer electrode on the second insulating film;
Forming a floating diffusion on the silicon substrate;
Forming a PN junction diode having a PN junction capacitance C ₄ in the silicon substrate,
Forming a third insulating film on the second transfer electrode;
First and second wiring layers are formed on the third insulating film, the floating diffusion and the first wiring layer, and the P-type region or N-type of the second wiring layer and the PN junction diode Connecting each region, and
Forming a fourth insulating film on said first wiring layer and the second wiring layer,
A conductive film is formed on the fourth insulating film, a capacitor C1 is formed between the first wiring layer connected to the floating diffusion and the conductive film, and the conductive film and the _first And a step of connecting the two wiring layers to each other.

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