JP6493690B2 - ＳｉＣエピタキシャルウェハ及びその製造方法、並びに、ラージピット欠陥検出方法、欠陥識別方法 - Google Patents
ＳｉＣエピタキシャルウェハ及びその製造方法、並びに、ラージピット欠陥検出方法、欠陥識別方法 Download PDFInfo
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- JP6493690B2 JP6493690B2 JP2016185945A JP2016185945A JP6493690B2 JP 6493690 B2 JP6493690 B2 JP 6493690B2 JP 2016185945 A JP2016185945 A JP 2016185945A JP 2016185945 A JP2016185945 A JP 2016185945A JP 6493690 B2 JP6493690 B2 JP 6493690B2
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- 238000000034 method Methods 0.000 title claims description 43
- 238000004519 manufacturing process Methods 0.000 title claims description 29
- 238000001514 detection method Methods 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims description 184
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 106
- 229910052799 carbon Inorganic materials 0.000 claims description 105
- 239000013078 crystal Substances 0.000 claims description 88
- 230000003287 optical effect Effects 0.000 claims description 14
- 238000005424 photoluminescence Methods 0.000 claims description 9
- 229910010271 silicon carbide Inorganic materials 0.000 description 207
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 196
- 235000012431 wafers Nutrition 0.000 description 71
- 238000006243 chemical reaction Methods 0.000 description 54
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- 239000007789 gas Substances 0.000 description 4
- 241000239290 Araneae Species 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
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- 229910052710 silicon Inorganic materials 0.000 description 3
- 238000000859 sublimation Methods 0.000 description 3
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- 244000000626 Daucus carota Species 0.000 description 2
- 235000002767 Daucus carota Nutrition 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
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- 229910002804 graphite Inorganic materials 0.000 description 2
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- 239000001294 propane Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
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- 238000001953 recrystallisation Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/02447—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- General Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW106128222A TWI657171B (zh) | 2016-08-31 | 2017-08-21 | ＳｉＣ磊晶晶圓及其製造方法、以及大凹坑缺陷檢測方法、缺陷識別方法 |
| DE112017004347.6T DE112017004347B4 (de) | 2016-08-31 | 2017-08-21 | Herstellungsverfahren für einen SiC-Epitaxiewafer |
| CN201780052334.5A CN109642343B (zh) | 2016-08-31 | 2017-08-21 | SiC外延晶片及其制造方法、大凹坑缺陷检测方法、缺陷识别方法 |
| US16/327,445 US11320388B2 (en) | 2016-08-31 | 2017-08-21 | SiC epitaxial wafer containing large pit defects with a surface density of 0.5 defects/CM2 or less, and production method therefor |
| PCT/JP2017/029718 WO2018043169A1 (ja) | 2016-08-31 | 2017-08-21 | ＳｉＣエピタキシャルウェハ及びその製造方法、並びに、ラージピット欠陥検出方法、欠陥識別方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016170221 | 2016-08-31 | ||
| JP2016170221 | 2016-08-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2018039714A JP2018039714A (ja) | 2018-03-15 |
| JP6493690B2 true JP6493690B2 (ja) | 2019-04-03 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016185945A Active JP6493690B2 (ja) | 2016-08-31 | 2016-09-23 | ＳｉＣエピタキシャルウェハ及びその製造方法、並びに、ラージピット欠陥検出方法、欠陥識別方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6493690B2 (de) |
| CN (1) | CN109642343B (de) |
| DE (1) | DE112017004347B4 (de) |
| TW (1) | TWI657171B (de) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018043171A1 (ja) | 2016-08-31 | 2018-03-08 | 昭和電工株式会社 | ＳｉＣエピタキシャルウェハ及びその製造方法、並びに、欠陥識別方法 |
| US11320388B2 (en) | 2016-08-31 | 2022-05-03 | Showa Denko K.K. | SiC epitaxial wafer containing large pit defects with a surface density of 0.5 defects/CM2 or less, and production method therefor |
| JP6459132B2 (ja) * | 2016-08-31 | 2019-01-30 | 昭和電工株式会社 | ＳｉＣエピタキシャルウェハ及びその製造方法、並びに、欠陥識別方法 |
| JP6585799B1 (ja) | 2018-10-15 | 2019-10-02 | 昭和電工株式会社 | ＳｉＣ基板の評価方法及びＳｉＣエピタキシャルウェハの製造方法 |
| JP7204436B2 (ja) * | 2018-11-16 | 2023-01-16 | 昭和電工株式会社 | 欠陥除去方法及びＳｉＣエピタキシャルウェハの製造方法 |
| JP7179219B1 (ja) | 2019-02-06 | 2022-11-28 | 昭和電工株式会社 | ＳｉＣデバイス及びその製造方法 |
| JP7148427B2 (ja) * | 2019-02-06 | 2022-10-05 | 昭和電工株式会社 | ＳｉＣエピタキシャルウェハ及びその製造方法 |
| KR102068933B1 (ko) * | 2019-07-11 | 2020-01-21 | 에스케이씨 주식회사 | 탄화규소 잉곳 성장용 분말 및 이를 이용한 탄화규소 잉곳의 제조방법 |
| CN111273158B (zh) * | 2020-02-26 | 2022-04-15 | 上海韦尔半导体股份有限公司 | 一种排查弹坑的测试方法、装置及智能打线设备 |
| JP2022020995A (ja) | 2020-07-21 | 2022-02-02 | 三菱電機株式会社 | 炭化珪素エピタキシャルウエハの製造方法 |
| CN113295616A (zh) * | 2021-03-30 | 2021-08-24 | 浙江大学杭州国际科创中心 | 一种SiC晶圆及其外延层结构的综合测试方法 |
| CN114136994A (zh) * | 2021-11-30 | 2022-03-04 | 无锡学院 | 一种SiC雪崩光电二极管的无损缺陷检测方法及装置 |
| WO2023218809A1 (ja) * | 2022-05-11 | 2023-11-16 | 住友電気工業株式会社 | 炭化珪素基板、炭化珪素エピタキシャル基板、炭化珪素基板の製造方法および炭化珪素半導体装置の製造方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5045272B2 (ja) * | 2007-07-03 | 2012-10-10 | 富士電機株式会社 | 単結晶炭化珪素基板の製造方法 |
| JP4959763B2 (ja) * | 2009-08-28 | 2012-06-27 | 昭和電工株式会社 | ＳｉＣエピタキシャルウェハ及びその製造方法 |
| JP4887418B2 (ja) * | 2009-12-14 | 2012-02-29 | 昭和電工株式会社 | ＳｉＣエピタキシャルウェハの製造方法 |
| JP5897834B2 (ja) | 2011-07-19 | 2016-03-30 | 昭和電工株式会社 | ＳｉＣエピタキシャルウェハの製造方法 |
| WO2013159083A1 (en) * | 2012-04-20 | 2013-10-24 | Ii-Vi Incorporated | LARGE DIAMETER, HIGH QUALITY SiC SINGLE CRYSTALS, METHOD AND APPARATUS |
| JP6037671B2 (ja) * | 2012-06-19 | 2016-12-07 | 昭和電工株式会社 | ＳｉＣエピタキシャルウェハ及びその製造方法 |
| JP2014024703A (ja) * | 2012-07-26 | 2014-02-06 | Sumitomo Electric Ind Ltd | 炭化珪素単結晶の製造方法 |
| JP6078330B2 (ja) * | 2012-12-21 | 2017-02-08 | 昭和電工株式会社 | 炭化珪素単結晶製造用坩堝、炭化珪素単結晶製造装置及び炭化珪素単結晶の製造方法 |
| EP3007209A4 (de) * | 2013-06-04 | 2017-01-18 | Nippon Steel & Sumitomo Metal Corporation | Verfahren zur herstellung eines sic-einkristallsubstrats für epitaktischen sic-halbleiterwafer und sic-einkristallsubstrat für epitaktischen sic-halbleiterwafer |
| JP6347188B2 (ja) | 2014-09-08 | 2018-06-27 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法および炭化珪素半導体装置 |
| CN107109693B (zh) * | 2014-11-12 | 2019-08-09 | 住友电气工业株式会社 | 碳化硅外延基板的制造方法和碳化硅外延基板 |
| JP6671850B2 (ja) | 2015-03-11 | 2020-03-25 | キヤノン株式会社 | 表示装置及びその制御方法 |
| JP2016185945A (ja) | 2016-04-05 | 2016-10-27 | 和浩 山本 | タンパク質と抗体 |
| JP6459132B2 (ja) * | 2016-08-31 | 2019-01-30 | 昭和電工株式会社 | ＳｉＣエピタキシャルウェハ及びその製造方法、並びに、欠陥識別方法 |
-
2016
- 2016-09-23 JP JP2016185945A patent/JP6493690B2/ja active Active
-
2017
- 2017-08-21 TW TW106128222A patent/TWI657171B/zh active
- 2017-08-21 DE DE112017004347.6T patent/DE112017004347B4/de active Active
- 2017-08-21 CN CN201780052334.5A patent/CN109642343B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TWI657171B (zh) | 2019-04-21 |
| DE112017004347T5 (de) | 2019-05-23 |
| JP2018039714A (ja) | 2018-03-15 |
| CN109642343A (zh) | 2019-04-16 |
| DE112017004347B4 (de) | 2024-04-25 |
| TW201823533A (zh) | 2018-07-01 |
| CN109642343B (zh) | 2021-10-26 |
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