JP6491267B2 - パワー半導体素子における超接合構造 - Google Patents
パワー半導体素子における超接合構造 Download PDFInfo
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- JP6491267B2 JP6491267B2 JP2017113170A JP2017113170A JP6491267B2 JP 6491267 B2 JP6491267 B2 JP 6491267B2 JP 2017113170 A JP2017113170 A JP 2017113170A JP 2017113170 A JP2017113170 A JP 2017113170A JP 6491267 B2 JP6491267 B2 JP 6491267B2
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- 239000004065 semiconductor Substances 0.000 title claims description 286
- 238000000034 method Methods 0.000 claims description 57
- 150000002500 ions Chemical class 0.000 claims description 43
- 239000002019 doping agent Substances 0.000 claims description 31
- 239000000463 material Substances 0.000 claims description 27
- 238000005468 ion implantation Methods 0.000 claims description 25
- 238000012545 processing Methods 0.000 claims description 23
- 238000009792 diffusion process Methods 0.000 claims description 16
- 238000010168 coupling process Methods 0.000 claims description 14
- 238000005859 coupling reaction Methods 0.000 claims description 14
- 239000011521 glass Substances 0.000 claims description 14
- 230000008878 coupling Effects 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 8
- 230000009477 glass transition Effects 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 239000004417 polycarbonate Substances 0.000 claims description 4
- 229920000515 polycarbonate Polymers 0.000 claims description 4
- 229920000642 polymer Polymers 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 239000011575 calcium Substances 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 230000001747 exhibiting effect Effects 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 239000011777 magnesium Substances 0.000 claims description 3
- 239000011734 sodium Substances 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- 239000004642 Polyimide Substances 0.000 claims description 2
- 239000004793 Polystyrene Substances 0.000 claims description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 239000005388 borosilicate glass Substances 0.000 claims description 2
- 229910052791 calcium Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000005329 float glass Substances 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 2
- 229920000636 poly(norbornene) polymer Polymers 0.000 claims description 2
- 229920000052 poly(p-xylylene) Polymers 0.000 claims description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 2
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 2
- 229920001721 polyimide Polymers 0.000 claims description 2
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 2
- 229920002223 polystyrene Polymers 0.000 claims description 2
- 229910052573 porcelain Inorganic materials 0.000 claims description 2
- 239000011591 potassium Substances 0.000 claims description 2
- 229910052700 potassium Inorganic materials 0.000 claims description 2
- 239000005361 soda-lime glass Substances 0.000 claims description 2
- 229910052708 sodium Inorganic materials 0.000 claims description 2
- 229920001169 thermoplastic Polymers 0.000 claims description 2
- 239000004416 thermosoftening plastic Substances 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- 238000002347 injection Methods 0.000 claims 1
- 239000007924 injection Substances 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 238000002513 implantation Methods 0.000 description 13
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910002601 GaN Inorganic materials 0.000 description 7
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 7
- 229910052733 gallium Inorganic materials 0.000 description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 6
- 229910010271 silicon carbide Inorganic materials 0.000 description 6
- 238000000407 epitaxy Methods 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 4
- 238000010884 ion-beam technique Methods 0.000 description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000004049 embossing Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000007704 wet chemistry method Methods 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910001423 beryllium ion Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
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- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
- H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
- H01L21/0465—Making n or p doped regions or layers, e.g. using diffusion using ion implantation using masks
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
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- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
- Drying Of Semiconductors (AREA)
Description
− ホウケイ酸ガラスと、
− ソーダ石灰ガラスと、
− フロートガラスと、
− 石英ガラスと、
− 磁器と、
− ポリマー熱可塑性物質と、
− ポリマーガラスと、
− アクリルガラスと、
− ポリカーボネートと、
− ポリエチレンテレフタレートと、
− 非ドープシリカと、
− 少なくとも1つのドーパントをドープされたシリカであって、この少なくとも1つのドーパントは、ホウ素(B)、ナトリウム(Na)、カルシウム(Ca)、カリウム(K)及びアルミニウム(Al)、亜鉛(Zn)、銅(Cu)、マグネシウム(Mg)、ゲルマニウム(Ge)を含む群から選択される、少なくとも1つのドーパントをドープされたシリカと、
− ポリマーと、
− ポリノルボルネンと、
− ポリスチレンと、
− ポリカーボネートと、
− ポリイミドと、
− ベンゾシクロブテンと、
− パリレンと
のうちの少なくとも1つを含む。
10 半導体ボディ
10−1 面
11 第1の半導体領域
12 第2の半導体領域
20 半導体ボディを供給するステップ
22 マスクを供給するステップ
24 供給されたマスクを半導体ボディと結合するステップ
28 半導体ボディに対してイオン注入を行うステップ
30 マスク
40 注入イオン
41 スタンプ
42 ハードマスク
50 エネルギフィルタ
111 近位端
112 遠位端
113 線
301 表側
302 裏側
303 開口部
304 コーナー
308 凹部
309 基層
404 開口部
Claims (17)
- パワー半導体素子(1)を処理する方法(2)であって、
− 前記パワー半導体素子(1)の半導体ボディ(10)を供給するステップ(20)と、
− マスク(30)を前記半導体ボディ(10)と結合するステップ(24)と、
− 注入イオン(40)が前記半導体ボディ(10)に入る前に前記マスク(30)を横断するように、前記半導体ボディ(10)に対してイオン注入を行うステップ(28)と、を含み、
前記マスク(30)はガラスマスクであり、
少なくとも前記ガラスマスク(30)のガラス転移温度になる温度で前記ガラスマスク(30)に対して刻印ステップを実施するステップを更に含む方法(2)。 - − 前記マスク(30)を前記半導体ボディ(10)と結合する前に、前記マスク(30)を前記半導体ボディ(10)とは別個に供給するステップ(22)
を更に含む、請求項1に記載の方法(2)。 - 前記マスク(30)を前記半導体ボディ(10)と結合するステップ(24)は、接合ステップ及び接着処理ステップのうちの少なくとも一方を含む、請求項1又は2に記載の方法(2)。
- 前記マスク(30)を前記半導体ボディ(10)と結合するステップ(24)は、前記マスク(30)が前記半導体ボディ(10)と接触するように、前記マスク(30)を前記半導体ボディ(10)上にマウントするステップを含む、請求項1〜3のいずれか一項に記載の方法(2)。
- 前記マスク(30)を前記半導体ボディ(10)と結合するステップ(24)の前及び/又は後に前記マスク(30)を構造化するステップを更に含む、請求項1〜4のいずれか一項に記載の方法(2)。
- − 前記マスク(30)を構造化するステップは、前記マスク(30)を前記半導体ボディ(10)と結合するステップ(24)の前に、前記マスク(30)の表側(301)に対してエッチングステップ及び刻印ステップのうちの少なくとも一方を実施するステップ(221)を含み、
− 前記マスク(30)を前記半導体ボディ(10)と結合するステップ(24)は、前記半導体ボディ(10)上に前記表側(301)をマウントするステップを含み、
− 前記マスク(30)を構造化するステップは、前記マスク(30)を前記半導体ボディ(10)と結合するステップ(24)の後及び/又は前に、前記マスク(30)の一部分を前記マスク(30)の裏側(302)から除去するステップ(222)を更に含む、請求項5に記載の方法(2)。 - 前記マスク(30)はフォトパターン化可能であり、及び前記マスク(30)を構造化するステップは、少なくとも露光ステップ(223)及び現像ステップ(224)を実施するステップを含む、請求項5に記載の方法(2)。
- − 前記マスク(30)は、ウエハとして供給され、且つそのようなものとして前記半導体ボディ(10)と結合され(24)、及び
− 前記マスク(30)を構造化するステップは、前記マスク(30)を前記半導体ボディ(10)と結合するステップ(24)の後に、刻印ステップ(225)及びエッチングステップ(226)のうちの少なくとも一方を実施するステップを更に含む、請求項5に記載の方法(2)。 - 前記マスク(30)は、前記半導体ボディ(10)の熱膨張係数の80%〜120%の範囲にある熱膨張係数を呈する、請求項1〜8のいずれか一項に記載の方法(2)。
- 前記ガラスマスク(30)は、前記イオン注入(28)中に形状が安定している、請求項1〜9のいずれか一項に記載の方法(2)。
- 前記ガラスマスク(30)は、
− ホウケイ酸ガラスと、
− ソーダ石灰ガラスと、
− フロートガラスと、
− 石英ガラスと、
− 磁器と、
− ポリマー熱可塑性物質と、
− ポリマーガラスと、
− アクリルガラスと、
− ポリカーボネートと、
− ポリエチレンテレフタレートと、
− 非ドープシリカと、
− 少なくとも1つのドーパントをドープされたシリカであって、前記少なくとも1つのドーパントは、ホウ素、ナトリウム、カルシウム、カリウム及びアルミニウム、亜鉛、銅、マグネシウム、ゲルマニウムを含む群から選択される、少なくとも1つのドーパントをドープされたシリカと、
− ポリマーと、
− ポリノルボルネンと、
− ポリスチレンと、
− ポリカーボネートと、
− ポリイミドと、
− ベンゾシクロブテンと、
− パリレンと
のうちの少なくとも1つを含む、請求項1〜10のいずれか一項に記載の方法(2)。 - 前記イオン注入(28)は、400keVを超えるイオンエネルギにより実施される高エネルギイオン注入である、請求項1〜11のいずれか一項に記載の方法(2)。
- 前記イオン注入(28)は、前記半導体ボディ(10)内に超接合構造又はディープウェル構造のうちの少なくとも一方を形成するために実施される、請求項1〜12のいずれか一項に記載の方法(2)。
- 前記イオン注入(28)は、前記注入イオン(40)が伸長方向(Z)に沿って少なくとも5μmにわたって前記半導体ボディ(10)を横断するように実施される、請求項1〜13のいずれか一項に記載の方法(2)。
- 前記供給される半導体ボディ(10)は、ケイ素のドーパント拡散係数より小さいドーパント拡散係数を有する半導体ボディ材料を含む、請求項1〜14のいずれか一項に記載の方法(2)。
- − 注入イオンエネルギフィルタ(50)を供給するステップであって、前記半導体ボディ(10)に対して前記イオン注入を行うステップ(28)は、注入イオン(40)が前記半導体ボディ(10)に入る前に前記注入イオンエネルギフィルタ(50)及び前記マスク(30)のそれぞれを横断するように実施される、ステップ
を更に含む、請求項1〜15のいずれか一項に記載の方法(2)。 - 少なくとも前記イオン注入を適用することにより少なくとも1つの第1の半導体領域(11)を形成するステップであって、前記第1の半導体領域(11)は、第1の導電型のドーパントをドープされ、且つ伸長方向(Z)に沿って少なくとも5μmにわたって前記半導体ボディ(10)内に延びる柱状形状を呈し、前記少なくとも1つの第1の半導体領域(11)は、近位幅(d1)を呈する近位端(111)と、遠位幅(d2)を呈する遠位端(112)とを含み、前記少なくとも1つの第1の半導体領域(11)の、伸長方向(Z)に沿った前記近位端(111)と前記遠位端(112)との間の他のあらゆる場所における幅(D)は、前記近位幅(d1)より大きく、且つ前記遠位幅(d2)より小さくなる、形成するステップを更に含む、請求項1〜16のいずれか一項に記載の方法。
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