JP6489257B1 - Tin-plated copper wire, method of manufacturing the same, insulated wire, cable - Google Patents

Tin-plated copper wire, method of manufacturing the same, insulated wire, cable Download PDF

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JP6489257B1
JP6489257B1 JP2018047240A JP2018047240A JP6489257B1 JP 6489257 B1 JP6489257 B1 JP 6489257B1 JP 2018047240 A JP2018047240 A JP 2018047240A JP 2018047240 A JP2018047240 A JP 2018047240A JP 6489257 B1 JP6489257 B1 JP 6489257B1
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tin
copper
copper wire
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JP2019157224A (en
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黒田 洋光
洋光 黒田
保 櫻井
保 櫻井
岡田 良平
良平 岡田
聡史 矢嶋
聡史 矢嶋
節生 小林
節生 小林
良樹 中出
良樹 中出
宙 坂東
宙 坂東
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Hitachi Metals Ltd
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C2/00Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
    • C23C2/04Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor characterised by the coating material
    • C23C2/08Tin or alloys based thereon
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C2/00Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
    • C23C2/34Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor characterised by the shape of the material to be treated
    • C23C2/36Elongated material
    • C23C2/38Wires; Tubes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00Apparatus or processes specially adapted for manufacturing conductors or cables
    • H01B13/22Sheathing; Armouring; Screening; Applying other protective layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B7/00Insulated conductors or cables characterised by their form
    • H01B7/17Protection against damage caused by external factors, e.g. sheaths or armouring
    • H01B7/18Protection against damage caused by wear, mechanical force or pressure; Sheaths; Armouring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B7/00Insulated conductors or cables characterised by their form
    • H01B7/17Protection against damage caused by external factors, e.g. sheaths or armouring
    • H01B7/28Protection against damage caused by moisture, corrosion, chemical attack or weather
    • H01B7/2806Protection against damage caused by corrosion

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Coating With Molten Metal (AREA)
  • Non-Insulated Conductors (AREA)

Abstract

【課題】錫メッキ銅線において錫メッキ層の耐摩耗性を向上させる。【解決手段】銅を含む銅線と、銅線の外周に形成され、錫銅化合物としてCu6Sn5を含む錫メッキ層と、を備え、錫メッキ層に対してX線を照射して測定されるX線回折パターンにおいて、錫メッキ層を構成する錫銅化合物のミラー指数(101)面に対応するピークの積分強度IAと銅線を構成する銅のミラー指数(111)面に対応するピークの積分強度IBとの合計に対する積分強度IAの積分強度比率が15%以上である、錫メッキ銅線が提供される。【選択図】図1An object of the present invention is to improve the wear resistance of a tin-plated layer in a tin-plated copper wire. An X-ray is measured by irradiating a tin-plated layer with a copper wire containing copper and a tin-plated layer formed on the outer periphery of the copper wire and containing Cu6Sn5 as a tin-copper compound. In the line diffraction pattern, the integrated intensity IA of the peak corresponding to the Miller index (101) plane of the tin-copper compound constituting the tin plating layer and the integrated intensity of the peak corresponding to the Miller index (111) surface of copper constituting the copper wire A tin-plated copper wire is provided, wherein the integrated intensity ratio of integrated intensity IA to the sum with IB is 15% or more. [Selected figure] Figure 1

Description

本発明は、錫メッキ銅線およびその製造方法、並びに絶縁電線、ケーブルに関する。   The present invention relates to a tin-plated copper wire, a method of manufacturing the same, an insulated wire, and a cable.

産業用ロボットや工作機械、および各種電気機器等に使用される可とう性に優れた絶縁電線やケーブルがある。このような可とう性に優れた絶縁電線やケーブルには、所望の可とう性を得るために、細径の銅線を撚り合わせた撚り線が用いられている。この銅線には、腐食などによる表面品質の低下を抑える目的で、錫メッキが施されることがある。   There are insulated wires and cables with high flexibility that are used for industrial robots, machine tools, and various electric devices. In such an insulated wire or cable excellent in flexibility, in order to obtain desired flexibility, a stranded wire in which thin copper wires are twisted is used. The copper wire may be tin-plated for the purpose of suppressing deterioration of surface quality due to corrosion or the like.

銅線への錫メッキ方法としては、溶融メッキ法がある(例えば、特許文献1を参照)。溶融メッキ法では、例えば、錫を溶融させた溶湯中に銅線を浸漬させてから引き上げて、銅線の表面に溶融した錫を付着させ、それを凝固させることで、錫メッキ層を設ける。   As a tin plating method to a copper wire, there is a hot-dip plating method (see, for example, Patent Document 1). In the hot-dip plating method, for example, a copper wire is immersed in a molten metal in which tin is melted and then pulled up to adhere the molten tin to the surface of the copper wire and solidify it to form a tin plating layer.

銅線に錫メッキ層を設けた錫メッキ銅線は、例えば複数本を撚り合わせて撚り線に形成され、絶縁電線やケーブルを構成する導体として使用される。撚り線の外周に絶縁層を形成することで絶縁電線やケーブルが得られる。   For example, a tin-plated copper wire in which a tin plating layer is provided on a copper wire is formed into a stranded wire by twisting a plurality of wires, and is used as a conductor constituting an insulated wire or a cable. By forming an insulating layer on the outer periphery of the stranded wire, an insulated wire or cable can be obtained.

特開2001−345018号公報JP 2001-345018 A

しかし、錫メッキ銅線では、撚り線の製造過程で錫メッキ銅線同士が擦れたり、錫メッキ銅線がガイドやプーリなどの製造装置を構成する部材と接触したりすることで、錫メッキ層が摩耗し、銅線が露出してしまうことがある。銅線の露出は、銅線の腐食や変色などを引き起こし、錫メッキ銅線の信頼性を低下させることになる。   However, in the tin-plated copper wire, the tin-plated copper wire rubs against each other in the production process of the stranded wire, or the tin-plated copper wire contacts the members constituting the manufacturing apparatus such as a guide or a pulley. May wear out and copper wire may be exposed. The exposure of the copper wire causes corrosion or discoloration of the copper wire, which reduces the reliability of the tin-plated copper wire.

本発明は、錫メッキ銅線において錫メッキ層の耐摩耗性を向上させる技術を提供することを一目的とする。   An object of the present invention is to provide a technique for improving the wear resistance of a tin-plated layer in a tin-plated copper wire.

本発明の一態様によれば、
銅を含む銅線と、
前記銅線の外周に形成され、錫銅化合物としてCuSnを含む錫メッキ層と、を備え、
前記錫メッキ層に対してX線を照射して測定されるX線回折パターンにおいて、前記錫メッキ層を構成する前記錫銅化合物のミラー指数(101)面に対応するピークの積分強度Iと前記銅線を構成する前記銅のミラー指数(111)面に対応するピークの積分強度Iとの合計に対する前記積分強度Iの積分強度比率が15%以上である、
錫メッキ銅線が提供される。
According to one aspect of the invention:
Copper wire containing copper,
And a tin plating layer formed on the outer periphery of the copper wire and containing Cu 6 Sn 5 as a tin-copper compound,
In X-ray diffraction pattern measured by irradiating X-rays to the tin-plated layer, and the integrated intensity I A of the peak corresponding to Miller indices (101) plane of the tin-copper compound constituting the tin plating layer integrated intensity ratio of the integrated intensity I a to the sum of the integrated intensity I B of a peak corresponding to Miller indices (111) plane of the copper constituting the copper wire is 15% or more,
A tin plated copper wire is provided.

本発明の他の態様によれば、
錫溶湯に銅を添加し、前記錫溶湯における銅濃度を、前記錫溶湯の温度における銅の飽和濃度の80%以上となるように調整する工程と、
銅濃度を調整した前記錫溶湯に、銅を含む銅線を浸漬して引き上げることで、錫銅化合物としてCuSnを含む錫メッキ層を前記銅線の表面に形成する工程と、を有し、
前記錫メッキ層に対してX線を照射して測定されるX線回折パターンにおいて、前記錫メッキ層を構成する前記錫銅化合物のミラー指数(101)面に対応するピークの積分強度Iと前記銅線を構成する前記銅のミラー指数(111)面に対応するピークの積分強度Iとの合計に対する前記積分強度Iの積分強度比率が15%以上である、
錫メッキ銅線の製造方法が提供される。
According to another aspect of the invention,
Adding copper to the molten tin, and adjusting the concentration of copper in the molten tin to be 80% or more of the saturation concentration of copper at the temperature of the molten tin;
Forming a tin plating layer containing Cu 6 Sn 5 as a tin-copper compound on the surface of the copper wire by immersing and pulling up a copper wire containing copper in the molten tin in which the copper concentration is adjusted; And
In X-ray diffraction pattern measured by irradiating X-rays to the tin-plated layer, and the integrated intensity I A of the peak corresponding to Miller indices (101) plane of the tin-copper compound constituting the tin plating layer integrated intensity ratio of the integrated intensity I a to the sum of the integrated intensity I B of a peak corresponding to Miller indices (111) plane of the copper constituting the copper wire is 15% or more,
A method of making a tin plated copper wire is provided.

本発明のさらに他の態様によれば、
複数の錫メッキ銅線を撚り合わせた撚り線からなる導体と、前記導体を被覆する絶縁層と、を備える絶縁電線であって、
前記錫メッキ銅線は、
銅を含む銅線と、
前記銅線の外周に形成され、錫銅化合物としてCuSnを含む錫メッキ層と、を備え、
前記錫メッキ層に対してX線を照射して測定されるX線回折パターンにおいて、前記錫メッキ層を構成する前記錫銅化合物のミラー指数(101)面に対応するピークの積分強度Iと前記銅線を構成する前記銅のミラー指数(111)面に対応するピークの積分強度Iとの合計に対する前記積分強度Iの積分強度比率が15%以上である、
絶縁電線が提供される。
According to yet another aspect of the invention,
An insulated wire comprising: a conductor comprising a stranded wire obtained by twisting a plurality of tin-plated copper wires; and an insulating layer covering the conductor,
The tin-plated copper wire is
Copper wire containing copper,
And a tin plating layer formed on the outer periphery of the copper wire and containing Cu 6 Sn 5 as a tin-copper compound,
In X-ray diffraction pattern measured by irradiating X-rays to the tin-plated layer, and the integrated intensity I A of the peak corresponding to Miller indices (101) plane of the tin-copper compound constituting the tin plating layer integrated intensity ratio of the integrated intensity I a to the sum of the integrated intensity I B of a peak corresponding to Miller indices (111) plane of the copper constituting the copper wire is 15% or more,
An insulated wire is provided.

本発明のさらに他の態様によれば、
複数の錫メッキ銅線を撚り合わせた撚り線からなる導体と、前記導体を被覆する絶縁層と、を備えるケーブルであって、
前記錫メッキ銅線は、
銅を含む銅線と、
前記銅線の外周に形成され、錫銅化合物としてCuSnを含む錫メッキ層と、を備え、
前記錫メッキ層に対してX線を照射して測定されるX線回折パターンにおいて、前記錫メッキ層を構成する前記錫銅化合物のミラー指数(101)面に対応するピークの積分強度Iと前記銅線を構成する前記銅のミラー指数(111)面に対応するピークの積分強度Iとの合計に対する前記積分強度Iの積分強度比率が15%以上である、
ケーブルが提供される。
According to yet another aspect of the invention,
What is claimed is: 1. A cable comprising: a conductor comprising a stranded wire obtained by twisting a plurality of tin-plated copper wires;
The tin-plated copper wire is
Copper wire containing copper,
And a tin plating layer formed on the outer periphery of the copper wire and containing Cu 6 Sn 5 as a tin-copper compound,
In X-ray diffraction pattern measured by irradiating X-rays to the tin-plated layer, and the integrated intensity I A of the peak corresponding to Miller indices (101) plane of the tin-copper compound constituting the tin plating layer integrated intensity ratio of the integrated intensity I a to the sum of the integrated intensity I B of a peak corresponding to Miller indices (111) plane of the copper constituting the copper wire is 15% or more,
A cable is provided.

本発明によれば、錫メッキ銅線において錫メッキ層の耐摩耗性を向上させることができる。   According to the present invention, the wear resistance of the tin plating layer can be improved in the tin plating copper wire.

本発明の一実施形態にかかる錫メッキ銅線の長さ方向に垂直な断面を示す図である。It is a figure which shows the cross section perpendicular | vertical to the length direction of the tin plating copper wire concerning one Embodiment of this invention. 錫メッキ層の構造を模式的に示す概略図である。It is the schematic which shows the structure of a tin plating layer typically. 本発明の一実施形態にかかる錫メッキ銅線の製造方法を説明するための概略図である。It is the schematic for demonstrating the manufacturing method of the tin plating copper wire concerning one Embodiment of this invention. 実施例1,2および比較例1,2の各錫メッキ銅線について錫メッキ層のX線回折パターンを示す図である。It is a figure which shows the X-ray-diffraction pattern of a tin plating layer about each tin plating copper wire of Example 1, 2 and Comparative Examples 1, 2. FIG. 実施例1の錫メッキ銅線について合金層表面のSEM像である。It is a SEM image of the alloy layer surface about the tin plating copper wire of Example 1. FIG. 実施例2の錫メッキ銅線について合金層表面のSEM像である。It is a SEM image of the alloy layer surface about the tin plating copper wire of Example 2. FIG. 比較例1の錫メッキ銅線について合金層表面のSEM像である。It is a SEM image of the alloy layer surface about the tin plating copper wire of comparative example 1. FIG.

錫メッキ層は、銅を含む銅線を、錫を溶融させた錫溶湯に浸漬させて引き上げて形成されることで、銅線側から錫銅化合物を含む合金層および錫を含む錫層が積層されて構成される。合金層の形成は、銅線と溶融した錫とが接触したときに、銅と錫とが金属間化合物(錫銅合金)を生成することで生じる。一般に、合金層は、錫よりも硬質な錫銅化合物から形成されて耐摩耗性に優れているが、錫メッキ層に占める比率は低い傾向にある。   The tin plating layer is formed by immersing and pulling up a copper wire containing copper in a molten tin solution in which tin is melted, whereby an alloy layer containing a tin-copper compound and a tin layer containing tin are laminated from the copper wire side. And be configured. The formation of the alloy layer is caused by the formation of an intermetallic compound (tin-copper alloy) between copper and tin when the copper wire and molten tin come in contact with each other. Generally, the alloy layer is formed of a tin-copper compound harder than tin and is excellent in abrasion resistance, but the ratio of the tin plating layer tends to be low.

本発明者らは、錫メッキ層の耐摩耗性を向上すべく、錫メッキ層に占める合金層の比率を高めることに着目し、検討を行った。その結果、錫溶湯に銅を添加するとともに、その銅濃度を、その温度に対する飽和濃度の80%以上とするとよいことを見出した。   The inventors of the present invention conducted a study focusing on increasing the ratio of the alloy layer to the tin plating layer in order to improve the wear resistance of the tin plating layer. As a result, it has been found that it is preferable to add copper to molten tin and to make the copper concentration 80% or more of the saturation concentration with respect to the temperature.

具体的に説明すると、錫溶湯に銅線を浸漬させると、銅線と溶融した錫との間で錫銅化合物が生成する反応と、銅線の銅が錫溶湯へ溶出する反応とが起こる。錫溶湯に銅が添加されていない場合、銅の溶出の反応が相対的に進みやすくなるので、合金層の形成が進みにくい。これに対して、錫溶湯に銅が添加されている場合、特に銅濃度が所定値以上であると、銅の溶出が抑制され、錫銅化合物の生成が進みやすくなる。このように、錫溶湯での銅濃度を所定値以上としたうえで溶融メッキを行うことにより、錫メッキ層に占める合金層の比率を高め、錫メッキ層において所望の耐摩耗性を実現できる。本発明は、このような知見に基づいてなされたものである。   Specifically, when a copper wire is immersed in a molten tin, a reaction occurs in which a tin-copper compound is generated between the copper wire and the molten tin, and a reaction in which copper of the copper wire is eluted into the molten tin. In the case where copper is not added to the molten tin, the reaction of elution of copper is relatively easy to proceed, so the formation of the alloy layer is difficult to proceed. On the other hand, when copper is added to the molten tin, elution of copper is suppressed particularly when the copper concentration is equal to or higher than a predetermined value, and the formation of a tin-copper compound tends to proceed. As described above, by performing melt plating after setting the copper concentration in the molten tin to a predetermined value or more, the ratio of the alloy layer to the tin plating layer can be increased, and desired wear resistance can be realized in the tin plating layer. The present invention has been made based on such findings.

<一実施形態>
以下、本発明の一実施形態について図面を用いて説明する。図1は、本発明の一実施形態にかかる錫メッキ銅線の長手方向に垂直な断面図である。図2は、錫メッキ層の構造を模式的に示す概略図である。なお、本明細書において「〜」を用いて表される数値範囲は、「〜」の前後に記載される数値を下限値および上限値として含む範囲を意味する。
<One embodiment>
Hereinafter, an embodiment of the present invention will be described using the drawings. FIG. 1 is a cross-sectional view perpendicular to the longitudinal direction of a tin-plated copper wire according to an embodiment of the present invention. FIG. 2 is a schematic view schematically showing the structure of a tin plating layer. In addition, the numerical range represented using "-" in this specification means the range which includes the numerical value described before and after "-" as a lower limit and an upper limit.

(錫メッキ銅線)
図1に示すように、錫メッキ銅線1は、銅を含む銅線11と、錫メッキ層12と、を備えて構成される。
(Tin-plated copper wire)
As shown in FIG. 1, the tin-plated copper wire 1 is configured to include a copper wire 11 containing copper and a tin-plated layer 12.

銅を含む銅線11としては、例えば、タフピッチ銅や無酸素銅等からなる線、または銅合金からなる線を用いることができる。銅線11の線径は、用途に応じて適宜変更することができ、可とう性の観点からは、例えば0.08mm〜0.6mmとするとよい。   As the copper wire 11 containing copper, for example, a wire made of tough pitch copper, oxygen-free copper or the like, or a wire made of a copper alloy can be used. The wire diameter of the copper wire 11 can be suitably changed according to a use, and it is good to be referred to as 0.08 mm-0.6 mm, for example from a viewpoint of flexibility.

銅線11は、可とう性の観点からは、以下の銅合金材から形成されることが好ましい。具体的には、銅合金材は、チタン濃度が5〜55mass ppm、硫黄濃度が3〜12mass ppm、酸素濃度が2〜30mass ppm、残部が銅と不可避不純物からなる。この銅合金材は、微量のTiを含むため、低温度の加熱で焼き鈍すことができ、また高い伸び性を有する。   The copper wire 11 is preferably formed of the following copper alloy material from the viewpoint of flexibility. Specifically, in the copper alloy material, the concentration of titanium is 5 to 55 mass ppm, the concentration of sulfur is 3 to 12 mass ppm, the concentration of oxygen is 2 to 30 mass ppm, and the balance is copper and unavoidable impurities. Since this copper alloy material contains a small amount of Ti, it can be annealed by low temperature heating and has high extensibility.

銅線11の表面には、溶融メッキ法により、錫メッキ層12が形成されている。錫メッキ層12は、銅線11に含まれる銅と溶融した錫との間で生成する錫銅化合物としてCuSnを含む。本実施形態では、銅濃度を調整した錫溶湯を用いて溶融メッキを行うことにより、錫メッキ層12は、実質的に、錫銅化合物を含む合金層から構成されることになる。なお、実質的に合金層から構成されるとは、合金層のみから構成される場合に限定されない。例えば図2に示すように、錫メッキ層12が、銅線11側から順に、錫銅合金を含む合金層12aおよび錫を含む錫層12bが積層された積層構造を有し、錫層12bが合金層12aに対して無視できるような厚さとなる場合も含む。 A tin plating layer 12 is formed on the surface of the copper wire 11 by hot-dip plating. The tin plating layer 12 contains Cu 6 Sn 5 as a tin-copper compound formed between copper contained in the copper wire 11 and molten tin. In the present embodiment, the tin plating layer 12 is substantially constituted of an alloy layer containing a tin-copper compound by performing melt plating using molten tin in which the copper concentration is adjusted. In addition, being comprised substantially from an alloy layer is not limited to when comprised only from an alloy layer. For example, as shown in FIG. 2, the tin plating layer 12 has a laminated structure in which an alloy layer 12 a containing a tin-copper alloy and a tin layer 12 b containing tin are laminated in order from the copper wire 11 side. It also includes the case where the thickness is negligible with respect to the alloy layer 12a.

錫メッキ層12は、実質的に錫銅化合物から構成されることで、その表面に対してX線を照射してX線回折パターンを測定したときに、錫メッキ層12を構成する錫銅化合物のミラー指数(101)面に対応するピークの積分強度Iと銅線11を構成する銅のミラー指数(111)面に対応するピークの積分強度Iとの合計に対する積分強度Iの積分強度比率(I/(I+I)×100)が15%以上となるように構成される。 The tin plating layer 12 is substantially composed of a tin-copper compound, and when the X-ray diffraction pattern is measured by irradiating the surface with X-rays, the tin-copper compound constituting the tin plating layer 12 Of the integrated intensity I A with respect to the sum of the integrated intensity I A of the peak corresponding to the Miller index (101) plane and the integrated intensity I B of the peak corresponding to the Miller index (111) surface of copper constituting the copper wire 11 The intensity ratio (I A / (I A + I B ) × 100) is configured to be 15% or more.

ここで、積分強度比率の算出について説明する。   Here, calculation of the integral intensity ratio will be described.

積分強度比率は、錫メッキ層12の任意の箇所にX線を照射して検出される回折X線の回折角と強度とを測定して得られるX線回折パターンに基づいて求められる。具体的には、X線の入射角度を5°として、例えば図4に示すようなX線回折パターンを取得し、錫銅化合物についてミラー指数(101)面に対応するピークの積分強度Iと、銅についてミラー指数(111)面に対応するピークの積分強度Iとをそれぞれ測定し、算出することができる。 The integrated intensity ratio is determined based on an X-ray diffraction pattern obtained by measuring the diffraction angle and the intensity of the diffracted X-rays detected by irradiating X-rays at an arbitrary position of the tin plating layer 12. Specifically, for example, an X-ray diffraction pattern as shown in FIG. 4 is obtained with an X-ray incident angle of 5 °, and the integrated intensity I A of the peak corresponding to the Miller index (101) plane for the tin-copper compound , and integrated intensity I B of a peak corresponding to Miller indices (111) plane were measured for copper can be calculated.

積分強度比率を15%以上とすることにより、錫メッキ層12を実質的に錫銅化合物で構成することができ、所望の耐摩耗性が得られる。積分強度比率が大きくなるほど、耐摩耗性が高くなるが、錫メッキ層12が厚くなることで錫メッキ銅線1の可とう性が低くなるおそれがある。そのため、可とう性の観点からは、積分強度比率が50%以下であることが好ましい。錫メッキ銅線1において耐摩耗性と可とう性とを高い水準でバランスよく得る観点からは、積分強度比率を19%〜30%とすることがより好ましい。   By setting the integrated strength ratio to 15% or more, the tin plating layer 12 can be substantially constituted of a tin-copper compound, and desired wear resistance can be obtained. The larger the integrated strength ratio, the higher the wear resistance, but the thicker the tin plating layer 12 is, the lower the flexibility of the tin-plated copper wire 1 may be. Therefore, from the viewpoint of flexibility, the integrated intensity ratio is preferably 50% or less. The integrated strength ratio is more preferably 19% to 30% from the viewpoint of achieving a good balance between wear resistance and flexibility in the tin-plated copper wire 1.

錫メッキ層12の厚さは、耐摩耗性を向上させる観点からは厚いことが好ましいが、錫メッキ銅線1の可とう性の観点からは薄いことが好ましい。高い耐摩耗性を維持しつつ、適度な可とう性を得る観点からは、0.1μm〜0.5μmであることが好ましい。   The thickness of the tin plating layer 12 is preferably large from the viewpoint of improving wear resistance, but is preferably thin from the viewpoint of flexibility of the tin-plated copper wire 1. From the viewpoint of obtaining appropriate flexibility while maintaining high wear resistance, the thickness is preferably 0.1 μm to 0.5 μm.

錫メッキ層12は、原子間力顕微鏡(AFM)に設けられたシリコン探針をダイヤモンドコートした探針を、錫メッキ層12の表面に1μNの荷重で押し当てた状態で、速度50μm/secで100往復摺動させたときに、スクラッチ痕が形成されないような耐摩耗性を有することが好ましい。このような錫メッキ層12によれば、例えば錫メッキ銅線1が他の部材と擦れたり、接触したりした場合であっても、銅線11の露出を抑制することができる。   The tin plating layer 12 is obtained by pressing a silicon probe provided on an atomic force microscope (AFM) with a diamond probe on the surface of the tin plating layer 12 with a load of 1 μN at a speed of 50 μm / sec. It is preferable to have abrasion resistance such that scratch marks are not formed when sliding back and forth 100 times. According to such a tin plating layer 12, even if, for example, the tin-plated copper wire 1 is rubbed or brought into contact with another member, the exposure of the copper wire 11 can be suppressed.

(錫メッキ銅線の製造方法)
続いて、上述した錫メッキ銅線1の製造方法について図3を用いて説明する。図3は、本発明の一実施形態にかかる錫メッキ銅線の製造方法を説明するための概略図である。
(Production method of tin plated copper wire)
Then, the manufacturing method of the tin plating copper wire 1 mentioned above is demonstrated using FIG. FIG. 3 is a schematic view for explaining a method of manufacturing a tin-plated copper wire according to an embodiment of the present invention.

まず、錫メッキ層12を形成するための錫溶湯21を準備する。本実施形態では、錫原料とともに所定量の銅原料をメッキ槽20に添加し、これらを加熱により溶融させ、錫および銅が溶融する錫溶湯21を準備する。銅原料の添加量は、錫溶湯21における銅濃度が、錫溶湯21の温度での銅の飽和濃度の80%以上となるように調整する。   First, a molten tin 21 for forming the tin plating layer 12 is prepared. In the present embodiment, a predetermined amount of copper raw material is added to the plating tank 20 together with the tin raw material, these are melted by heating, and a tin molten metal 21 in which tin and copper are melted is prepared. The addition amount of the copper raw material is adjusted so that the copper concentration in the molten tin 21 becomes 80% or more of the saturation concentration of copper at the temperature of the molten tin 21.

銅の飽和濃度とは、銅と錫の平衡状態図において、錫および銅が液相(溶湯)となるときに銅が錫中に飽和して溶融する(析出せずに固溶する)濃度を示す。例えば、銅の飽和濃度は、溶湯の温度が310℃のとき3.0質量%、380℃のとき5.5質量%、400℃のとき6.8質量%、430℃のとき8.5質量%、450℃のとき10.0質量%となる。   The saturation concentration of copper means the concentration at which copper is saturated and melted in tin (solid solution without precipitation) when tin and copper form a liquid phase (melt) in the equilibrium phase diagram of copper and tin. Show. For example, the saturation concentration of copper is 3.0% by mass at a melt temperature of 310 ° C., 5.5% by mass at 380 ° C., 6.8% by mass at 400 ° C., and 8.5% at 430 ° C. %, It becomes 10.0 mass% at 450 ° C.

本実施形態では、錫溶湯21の加熱温度に応じて銅濃度が飽和濃度の80%以上となるように銅の添加量を調整する。溶湯21における銅濃度が飽和濃度の80%未満となると、銅線11を錫溶湯21に浸漬させたときに、錫銅合金の生成よりも、銅線11からの銅の溶出が相対的に生じやすくなるため、錫銅化合物の比率が小さくなることで、所望の耐摩耗性が得られなくなる。この点、銅濃度を飽和濃度の80%以上に設定することで、錫メッキ層12での錫銅化合物の比率を高めて高い耐摩耗性を得ることができる。   In the present embodiment, the addition amount of copper is adjusted so that the copper concentration is 80% or more of the saturation concentration according to the heating temperature of the molten tin 21. When the copper concentration in the molten metal 21 is less than 80% of the saturation concentration, when the copper wire 11 is immersed in the tin molten metal 21, elution of copper from the copper wire 11 relatively occurs rather than formation of a tin-copper alloy. As the tin-copper compound ratio decreases, the desired wear resistance can not be obtained. In this respect, by setting the copper concentration to 80% or more of the saturation concentration, the ratio of the tin-copper compound in the tin plating layer 12 can be increased to obtain high wear resistance.

なお、錫溶湯21に含まれる銅は、それ自体が錫メッキ層12を構成するように作用するのではなく、溶湯21に存在することで銅線11からの銅の溶出を抑制するとともに錫銅合金の生成を促進するために作用する。   The copper contained in the tin molten metal 21 does not act to constitute the tin plating layer 12 itself, but is present in the molten metal 21 to suppress the elution of copper from the copper wire 11 and to be tin copper. Act to promote the formation of alloys.

また、メッキ槽20には、例えば錫溶湯21を加熱できるようにヒータが取り付けられ、錫および銅を溶融状態で保持できるよう溶湯21の温度が一定に維持されている。溶湯21の温度は、例えば250℃〜350℃に維持されている。   Further, a heater is attached to the plating tank 20, for example, so that the molten tin 21 can be heated, and the temperature of the molten metal 21 is maintained constant so that tin and copper can be held in a molten state. The temperature of the molten metal 21 is maintained, for example, at 250 ° C to 350 ° C.

続いて、例えば線径が0.08mm〜0.6mmである銅線11を準備する。この銅線11を引き出すことにより所定の線速で走行させる。   Subsequently, for example, a copper wire 11 having a wire diameter of 0.08 mm to 0.6 mm is prepared. By pulling out the copper wire 11, it travels at a predetermined linear velocity.

続いて、銅線11を、銅を添加して銅濃度を調整した錫溶湯21に導入して浸漬させ、所定時間、浸漬させた後に、錫溶湯21から引き上げる。   Subsequently, the copper wire 11 is introduced into and immersed in the tin melt 21 to which copper is added to adjust the copper concentration, and after being immersed for a predetermined time, the copper wire 11 is pulled up from the tin melt 21.

メッキ槽20から引き出された銅線11の表面には錫溶湯21が付着する。このとき、銅線11と錫溶湯21との間で、銅線11からの銅の溶出と、錫銅合金の生成とが起こることになる。本実施形態では、錫溶湯21における銅濃度を飽和濃度の80%以上とすることで、銅線11からの銅の溶出よりも、錫銅合金の生成を促進している。   The molten tin 21 adheres to the surface of the copper wire 11 drawn from the plating tank 20. At this time, elution of copper from the copper wire 11 and formation of a tin-copper alloy occur between the copper wire 11 and the molten tin 21. In the present embodiment, by setting the copper concentration in the tin melt 21 to 80% or more of the saturation concentration, the formation of a tin-copper alloy is promoted more than the elution of copper from the copper wire 11.

続いて、錫溶湯21が付着した銅線11をダイス30に挿通させる。ダイス30は、銅線11を挿通させる孔を有しており、その孔径は、銅線11に付着する錫溶湯21の余剰分を取り除き、所定の被覆厚さに調整できるように設定されている。孔径は、錫メッキ層12の厚さに応じて適宜変更するとよく、例えば銅線11の外径に対して10μm〜50μm大きい径にするとよい。   Subsequently, the copper wire 11 to which the molten tin 21 adheres is inserted into the die 30. The die 30 has a hole through which the copper wire 11 is inserted, and the hole diameter of the die 30 is set so as to remove an excess portion of the molten tin 21 adhering to the copper wire 11 and to adjust to a predetermined coating thickness. . The hole diameter may be appropriately changed in accordance with the thickness of the tin plating layer 12 and may be, for example, 10 μm to 50 μm larger than the outer diameter of the copper wire 11.

銅線11の表面に付着した錫溶湯21は冷却されて徐々に凝固することで、錫メッキ層12となる。   The molten tin 21 attached to the surface of the copper wire 11 is cooled and gradually solidified to form a tin plating layer 12.

以上により、本実施形態の錫メッキ銅線1が得られる。錫メッキ銅線1の錫メッキ層12では、錫銅化合物の生成を促進させることで、錫銅化合物の比率を高くすることができ、錫銅化合物に対応するピークの積分強度比率を15%以上とすることができる。   Thus, the tin-plated copper wire 1 of the present embodiment is obtained. In the tin plating layer 12 of the tin plating copper wire 1, the ratio of the tin copper compound can be increased by promoting the formation of the tin copper compound, and the integrated intensity ratio of the peak corresponding to the tin copper compound is 15% or more It can be done.

(ケーブル)
上述した錫メッキ銅線1は、ケーブルの導体として使用することができる。具体的には、複数本の錫メッキ銅線1を撚り合わせて撚り線を形成し、その撚り線の外周に絶縁層を設けることによりケーブル(例えばロボットケーブル)として構成することができる。
(cable)
The tin-plated copper wire 1 described above can be used as a conductor of a cable. Specifically, a plurality of tin-plated copper wires 1 may be twisted to form a stranded wire, and an insulating layer may be provided on the outer periphery of the stranded wire to form a cable (for example, a robot cable).

なお、錫メッキ銅線1を撚り合わせる本数は、特に限定されず、ケーブルの種類に応じて適宜変更することができる。また、絶縁層としては、従来公知の樹脂材料を用いることができ、ケーブルに要求される特性に応じて適宜選択するとよい。   In addition, the number which twists the tin plating copper wire 1 is not specifically limited, According to the kind of cable, it can change suitably. Further, as the insulating layer, a conventionally known resin material can be used, and it may be appropriately selected according to the characteristics required for the cable.

<本実施形態にかかる効果>
本実施形態によれば、以下に示す1つ又は複数の効果を奏する
<Effect of this embodiment>
According to this embodiment, one or more of the following effects can be obtained.

本実施形態の錫メッキ銅線1によれば、錫メッキ層12が、実質的に、錫銅化合物を含む合金層12aから構成されており、錫メッキ層12のX線回折パターンにおいて、錫銅化合物に対応するピークの積分強度比率が15%以上となっている。錫銅化合物は錫よりも硬質であるため、錫銅化合物の比率が高くなるように錫メッキ層12を構成することで、錫メッキ層12の耐摩耗性を高くすることができる。   According to the tin-plated copper wire 1 of the present embodiment, the tin-plated layer 12 is substantially constituted of the alloy layer 12 a containing a tin-copper compound, and in the X-ray diffraction pattern of the tin-plated layer 12, tin copper The integrated intensity ratio of the peak corresponding to the compound is 15% or more. Since the tin-copper compound is harder than tin, the wear resistance of the tin-plated layer 12 can be increased by configuring the tin-plated layer 12 so that the ratio of the tin-copper compound is high.

また、錫メッキ層12は耐摩耗性に優れているため、錫メッキ銅線1同士を撚り合わせたり、撚り合わせの過程で他の部材と接触したりしても、錫メッキ層12の剥がれおよび銅線11の露出を抑制できるので、ケーブルの信頼性を向上させることができる。   In addition, since the tin plating layer 12 is excellent in wear resistance, peeling of the tin plating layer 12 occurs even if the tin plated copper wires 1 are twisted together or come into contact with other members in the process of twisting. Since the exposure of the copper wire 11 can be suppressed, the reliability of the cable can be improved.

また、錫メッキ層12の厚さは0.1μm〜0.5μmであることが好ましい。錫メッキ層12では、硬質な錫銅化合物の比率を高めているので、錫メッキ層12を0.1μm〜0.5μm以下と薄く形成しながらも、所望の耐摩耗性を得ることができる。しかも、錫メッキ層12を薄く形成することで、錫メッキ銅線1の可とう性を高く維持することができる。   Moreover, it is preferable that the thickness of the tin plating layer 12 is 0.1 micrometer-0.5 micrometer. In the tin plating layer 12, since the ratio of the hard tin-copper compound is increased, desired wear resistance can be obtained while forming the tin plating layer 12 as thin as 0.1 μm to 0.5 μm or less. In addition, by forming the tin plating layer 12 thin, flexibility of the tin plating copper wire 1 can be maintained high.

錫メッキ層12は、原子間力顕微鏡に設けられたシリコン探針をダイヤモンドコートした探針を、前記錫メッキ層の表面に1μNの荷重で押し当てた状態で、速度50μm/secで100往復摺動させたときに、スクラッチ痕が形成されないような耐摩耗性を有することが好ましい。スクラッチ痕が深くならないような耐摩耗性を有することで、銅線11の露出をより抑制し、ケーブルの信頼性をより向上させることができる。   The tin plating layer 12 is 100 reciprocating slides at a speed of 50 μm / sec in a state in which a silicon probe provided on an atomic force microscope is diamond-coated with a silicon probe and pressed against the surface of the tin plating layer with a load of 1 μN. It is preferable to have abrasion resistance such that scratch marks are not formed when moved. By having wear resistance such that the scratch marks do not get deeper, the exposure of the copper wire 11 can be further suppressed and the reliability of the cable can be further improved.

本実施形態では、錫メッキ層12を形成するために、錫および銅が溶融し、銅濃度が錫溶湯21の温度における銅の飽和濃度の80%以上である錫溶湯21を使用している。このような錫溶湯21によれば、銅線11を浸漬させたときに、銅の溶出よりも錫銅合金の生成を促進できるので、凝固により形成される錫メッキ層12において錫銅化合物の比率を高めることができる。そして、錫銅化合物に対応するピークの積分強度比率を15%以上となるように錫メッキ層12を構成することで、高い耐摩耗性を得ることができる。   In this embodiment, in order to form the tin plating layer 12, tin and copper melt, and the tin molten metal 21 whose copper concentration is 80% or more of the saturation concentration of copper at the temperature of the tin molten metal 21 is used. According to such a tin molten metal 21, the formation of the tin-copper alloy can be promoted rather than the elution of copper when the copper wire 11 is immersed, so the ratio of the tin-copper compound in the tin plating layer 12 formed by solidification Can be enhanced. Then, by configuring the tin plating layer 12 so that the integrated intensity ratio of the peak corresponding to the tin-copper compound is 15% or more, high wear resistance can be obtained.

また、本実施形態に係る錫メッキ銅線1では、当該錫メッキ銅線1が使用された電線やケーブルを繰り返し屈曲させたときに、錫メッキ銅線1同士が擦れたりしても錫メッキ層12が摩耗しにくいため、銅線11が露出してしまうことを抑制することができる。   Further, in the tin-plated copper wire 1 according to this embodiment, the tin-plated copper wire 1 may be rubbed even when the wire or cable in which the tin-plated copper wire 1 is used is repeatedly bent. Since 12 is hard to wear, it can control that copper wire 11 is exposed.

以上、本発明の一実施形態を具体的に説明したが、本発明は上述の実施形態に限定されるものではなく、その要旨を逸脱しない範囲で適宜変更可能である。   As mentioned above, although one Embodiment of this invention was described concretely, this invention is not limited to the above-mentioned embodiment, It can change suitably in the range which does not deviate from the summary.

次に、本発明について実施例に基づき、さらに詳細に説明するが、本発明はこれらの実施例に限定されない。   Next, the present invention will be described in more detail based on examples, but the present invention is not limited to these examples.

(実施例1)
本実施例では、錫メッキ銅線を作製し、錫メッキ層の耐摩耗性を評価した。
Example 1
In this example, a tin-plated copper wire was produced, and the wear resistance of the tin-plated layer was evaluated.

まず、錫メッキ層を形成するための溶湯を準備した。本実施例では、銅原料と錫原料を加熱により溶融させて、銅濃度が飽和濃度(飽和濃度比)の80%である溶湯を準備した。具体的には、錫溶湯の温度を310℃に設定し、その温度での銅の飽和濃度が3.0質量%であるので、錫溶湯における銅濃度が2.4質量%となるように銅を添加した。続いて、銅濃度を調整した錫溶湯に、線径が0.45mmの銅線を導入して浸漬させた。その後、銅線を引き上げて、ダイスに挿通させることで、余分な錫溶湯を取り除いた。その後、錫溶湯を冷却により凝固させて、錫メッキ層を形成した。これにより、実施例1の錫メッキ銅線を作製した。   First, a molten metal for forming a tin plating layer was prepared. In this example, the copper raw material and the tin raw material were melted by heating to prepare a molten metal whose copper concentration is 80% of the saturation concentration (saturation concentration ratio). Specifically, the temperature of the tin melt is set to 310 ° C., and the saturation concentration of copper at that temperature is 3.0% by mass, so that the copper concentration in the tin melt is 2.4% by mass. Was added. Subsequently, a copper wire having a wire diameter of 0.45 mm was introduced into and immersed in a molten tin whose copper concentration was adjusted. Thereafter, the copper wire was pulled up and inserted into a die to remove excess tin melt. Thereafter, the molten tin was solidified by cooling to form a tin plating layer. Thus, a tin-plated copper wire of Example 1 was produced.

作製した錫メッキ銅線について、錫メッキ層のX線回折測定を行った。その結果、図4に示すようなX線回折パターンが得られた。図4によると、錫銅化合物のミラー指数(101)面に対応するピークの積分強度比率は19%であって、15%以上であることが確認された。   About the produced tin plating copper wire, the X-ray-diffraction measurement of the tin plating layer was performed. As a result, an X-ray diffraction pattern as shown in FIG. 4 was obtained. According to FIG. 4, it was confirmed that the integrated intensity ratio of the peak corresponding to the Miller index (101) plane of the tin-copper compound is 19% and is 15% or more.

また、錫メッキ層の厚さについて電解溶解法により測定した。具体的には、電解膜厚計を用いて測定したところ、錫メッキ層の厚さが0.30μmであることが確認された。   In addition, the thickness of the tin plating layer was measured by an electrolytic dissolution method. Specifically, when measured using an electrolytic film thickness meter, it was confirmed that the thickness of the tin plating layer was 0.30 μm.

また、錫メッキ層において錫銅化合物の形成の程度を確認した。具体的には、錫メッキ層にエッチング処理(塩酸処理)を施すことで、錫メッキ層の表層にある錫層を取り除いて錫銅化合物を露出させ、その表面を電子顕微鏡により観察した。その結果、図5に示すように、銅線の表面に錫銅化合物が形成されていることが確認された。しかも、銅線の露出が確認されず、銅線の表面を覆うように錫銅化合物が形成されていることが確認された。   Moreover, the grade of formation of the tin-copper compound was confirmed in the tin plating layer. Specifically, the tin plating layer was subjected to etching (hydrochlorination treatment) to remove the tin layer on the surface of the tin plating layer to expose the tin-copper compound, and the surface was observed with an electron microscope. As a result, as shown in FIG. 5, it was confirmed that a tin-copper compound was formed on the surface of the copper wire. Moreover, no exposure of the copper wire was confirmed, and it was confirmed that a tin-copper compound was formed to cover the surface of the copper wire.

また、実施例1の錫メッキ銅線について、その錫メッキ層の耐摩耗性を以下の方法により測定した。具体的には、原子間力顕微鏡に設けられた探針を錫メッキ層の表面に1μNの荷重で押し当て、その状態で探針を100往復摺動させた後、錫メッキ層の表面を観察して、スクラッチ痕の有無を確認した。実施例1では、探針のスクラッチでも、錫メッキ層の表面に擦れた様相がほとんど確認されなかった。このことから、実施例1の錫メッキ銅線は、撚り合わせの際の接触では錫メッキ層が剥がれない程度の耐摩耗性を有することが確認された。   Further, with respect to the tin-plated copper wire of Example 1, the wear resistance of the tin-plated layer was measured by the following method. Specifically, the probe provided on the atomic force microscope is pressed against the surface of the tin plating layer with a load of 1 μN, and after sliding the probe 100 reciprocates in that state, the surface of the tin plating layer is observed And confirmed the presence of scratch marks. In Example 1, even when the probe was scratched, almost no appearance of rubbing on the surface of the tin plating layer was observed. From this, it was confirmed that the tin-plated copper wire of Example 1 had wear resistance to such an extent that the tin-plated layer did not peel off at the time of twisting.

錫溶湯の調整条件(温度や銅濃度)や錫メッキ層の構成、評価結果を以下の表1にまとめる。   The adjustment conditions (temperature and copper concentration) of the tin melt, the configuration of the tin plating layer, and the evaluation results are summarized in Table 1 below.

(実施例2、比較例1)
実施例2、比較例1では、錫溶湯の調整条件を表1に示すように適宜変更した以外は、実施例1と同様に錫メッキ銅線を作製し、評価を行った。
(Example 2, Comparative Example 1)
In Example 2 and Comparative Example 1, a tin-plated copper wire was produced and evaluated in the same manner as in Example 1 except that the adjustment conditions of the molten tin were appropriately changed as shown in Table 1.

実施例2では、錫溶湯における銅濃度を飽和濃度の96%とすることで、錫メッキ層における錫銅化合物の積分強度比率を24%にできることが確認された。つまり、実施例2では、錫銅化合物の比率が実施例1の19%よりも増加していることが確認された。錫銅化合物の表面観察を行ったところ、図6に示すように、錫銅化合物が銅線を露出させることなく被覆していることが確認された。また、スクラッチ痕は実施例1と同様に観察されなかった。   In Example 2, it was confirmed that the integral intensity ratio of the tin-copper compound in the tin plating layer can be 24% by setting the copper concentration in the tin molten metal to 96% of the saturation concentration. That is, in Example 2, it was confirmed that the ratio of the tin-copper compound is higher than 19% of Example 1. When the surface of the tin-copper compound was observed, as shown in FIG. 6, it was confirmed that the tin-copper compound was covering without exposing the copper wire. Also, no scratch marks were observed as in Example 1.

一方、比較例1では、錫溶湯における銅濃度を65%として飽和濃度の80%未満としたため、錫銅化合物の生成が進まないことが確認された。具体的には、比較例1の錫メッキ銅線について錫メッキ層をエッチングして表面観察を行ったところ、図7に示すように、銅線が露出してしまい、錫銅化合物がほとんど形成されていないことが確認された。また、錫銅化合物の積分強度比率が1%であって、15%未満であることが確認された。このことから、比較例1の錫メッキ層では錫銅化合物の生成が進まず、錫メッキ層が主に錫層から形成されていることが確認された。このような比較例1の錫メッキ銅線では、スクラッチ痕が明確に認められ、所望の耐摩耗性が得られないことが確認された。   On the other hand, in Comparative Example 1, it was confirmed that the formation of the tin-copper compound did not proceed because the copper concentration in the molten tin was set to 65% and was set to less than 80% of the saturation concentration. Specifically, when the tin plating layer of the tin plated copper wire of Comparative Example 1 was etched and the surface was observed, as shown in FIG. 7, the copper wire was exposed, and most of the tin copper compound was formed. It was not confirmed. Moreover, it was confirmed that the integrated intensity ratio of the tin-copper compound is 1% and less than 15%. From this, it was confirmed that the formation of the tin-copper compound did not proceed in the tin plating layer of Comparative Example 1, and the tin plating layer was mainly formed of the tin layer. In such a tin-plated copper wire of Comparative Example 1, scratch marks were clearly recognized, and it was confirmed that the desired abrasion resistance was not obtained.

以上のように、溶湯における銅濃度を所定値以上とすることにより、錫メッキ層において錫銅化合物の占める比率を高めることができ、耐摩耗性を向上できることが確認された。   As described above, it was confirmed that by setting the copper concentration in the molten metal to a predetermined value or more, the ratio of the tin-copper compound in the tin plating layer can be increased, and the wear resistance can be improved.

<本発明の好ましい態様>
以下に、本発明の好ましい態様について付記する。
<Preferred embodiment of the present invention>
The preferred embodiments of the present invention will be additionally described below.

[付記1]
本発明の一態様によれば、
銅を含む銅線と、
前記銅線の外周に形成され、錫銅化合物としてCuSnを含む錫メッキ層と、を備え、
前記錫メッキ層に対してX線を照射して測定されるX線回折パターンにおいて、前記錫メッキ層を構成する前記錫銅化合物のミラー指数(101)面に対応するピークの積分強度Iと前記銅線を構成する前記銅のミラー指数(111)面に対応するピークの積分強度Iとの合計に対する前記積分強度Iの積分強度比率が15%以上である、
錫メッキ銅線が提供される。
[Supplementary Note 1]
According to one aspect of the invention:
Copper wire containing copper,
And a tin plating layer formed on the outer periphery of the copper wire and containing Cu 6 Sn 5 as a tin-copper compound,
In X-ray diffraction pattern measured by irradiating X-rays to the tin-plated layer, and the integrated intensity I A of the peak corresponding to Miller indices (101) plane of the tin-copper compound constituting the tin plating layer integrated intensity ratio of the integrated intensity I a to the sum of the integrated intensity I B of a peak corresponding to Miller indices (111) plane of the copper constituting the copper wire is 15% or more,
A tin plated copper wire is provided.

[付記2]
付記1の錫メッキ銅線において、好ましくは、
前記積分強度比率が50%以下である。
[Supplementary Note 2]
In the tin-plated copper wire of Appendix 1, preferably
The integrated intensity ratio is 50% or less.

[付記3]
付記1又は2の錫メッキ銅線において、好ましくは、
前記積分強度比率が19%以上30%以下である。
[Supplementary Note 3]
Preferably, in the tin-plated copper wire of Appendix 1 or 2,
The integrated intensity ratio is 19% or more and 30% or less.

[付記4]
付記1〜3のいずれかの錫メッキ銅線において、好ましくは、
前記錫メッキ層の厚さが0.1μm以上0.5μm以下である。
[Supplementary Note 4]
In the tin-plated copper wire according to any one of appendices 1 to 3, preferably
The thickness of the tin plating layer is 0.1 μm or more and 0.5 μm or less.

[付記5]
本発明の他の態様によれば、
錫溶湯に銅を添加し、前記錫溶湯における銅濃度を、前記錫溶湯の温度における銅の飽和濃度の80%以上となるように調整する工程と、
銅濃度を調整した前記錫溶湯に、銅を含む銅線を浸漬して引き上げることで、錫銅化合物としてCuSnを含む錫メッキ層を前記銅線の表面に形成する工程と、を有し、
前記錫メッキ層に対してX線を照射して測定されるX線回折パターンにおいて、前記錫メッキ層を構成する前記錫銅化合物のミラー指数(101)面に対応するピークの積分強度Iと前記銅線を構成する前記銅のミラー指数(111)面に対応するピークの積分強度Iとの合計に対する前記積分強度Iの積分強度比率が15%以上である、
錫メッキ銅線の製造方法が提供される。
[Supplementary Note 5]
According to another aspect of the invention,
Adding copper to the molten tin, and adjusting the concentration of copper in the molten tin to be 80% or more of the saturation concentration of copper at the temperature of the molten tin;
Forming a tin plating layer containing Cu 6 Sn 5 as a tin-copper compound on the surface of the copper wire by immersing and pulling up a copper wire containing copper in the molten tin in which the copper concentration is adjusted; And
In X-ray diffraction pattern measured by irradiating X-rays to the tin-plated layer, and the integrated intensity I A of the peak corresponding to Miller indices (101) plane of the tin-copper compound constituting the tin plating layer integrated intensity ratio of the integrated intensity I a to the sum of the integrated intensity I B of a peak corresponding to Miller indices (111) plane of the copper constituting the copper wire is 15% or more,
A method of making a tin plated copper wire is provided.

[付記6]
本発明のさらに他の態様によれば、
複数の錫メッキ銅線を撚り合わせた撚り線からなる導体と、前記導体を被覆する絶縁層と、を備える絶縁電線であって、
前記錫メッキ銅線は、
銅を含む銅線と、
前記銅線の外周に形成され、錫銅化合物としてCuSnを含む錫メッキ層と、を備え、
前記錫メッキ層に対してX線を照射して測定されるX線回折パターンにおいて、前記錫メッキ層を構成する前記錫銅化合物のミラー指数(101)面に対応するピークの積分強度Iと前記銅線を構成する前記銅のミラー指数(111)面に対応するピークの積分強度Iとの合計に対する前記積分強度Iの積分強度比率が15%以上である、
絶縁電線が提供される。
[Supplementary Note 6]
According to yet another aspect of the invention,
An insulated wire comprising: a conductor comprising a stranded wire obtained by twisting a plurality of tin-plated copper wires; and an insulating layer covering the conductor,
The tin-plated copper wire is
Copper wire containing copper,
And a tin plating layer formed on the outer periphery of the copper wire and containing Cu 6 Sn 5 as a tin-copper compound,
In X-ray diffraction pattern measured by irradiating X-rays to the tin-plated layer, and the integrated intensity I A of the peak corresponding to Miller indices (101) plane of the tin-copper compound constituting the tin plating layer integrated intensity ratio of the integrated intensity I a to the sum of the integrated intensity I B of a peak corresponding to Miller indices (111) plane of the copper constituting the copper wire is 15% or more,
An insulated wire is provided.

[付記7]
本発明のさらに他の態様によれば、
複数の錫メッキ銅線を撚り合わせた撚り線からなる導体と、前記導体を被覆する絶縁層と、を備えるケーブルであって、
前記錫メッキ銅線は、
銅を含む銅線と、
前記銅線の外周に形成され、錫銅化合物としてCuSnを含む錫メッキ層と、を備え、
前記錫メッキ層に対してX線を照射して測定されるX線回折パターンにおいて、前記錫メッキ層を構成する前記錫銅化合物のミラー指数(101)面に対応するピークの積分強度Iと前記銅線を構成する前記銅のミラー指数(111)面に対応するピークの積分強度Iとの合計に対する前記積分強度Iの積分強度比率が15%以上である、
ケーブルが提供される。
[Supplementary Note 7]
According to yet another aspect of the invention,
What is claimed is: 1. A cable comprising: a conductor comprising a stranded wire obtained by twisting a plurality of tin-plated copper wires;
The tin-plated copper wire is
Copper wire containing copper,
And a tin plating layer formed on the outer periphery of the copper wire and containing Cu 6 Sn 5 as a tin-copper compound,
In X-ray diffraction pattern measured by irradiating X-rays to the tin-plated layer, and the integrated intensity I A of the peak corresponding to Miller indices (101) plane of the tin-copper compound constituting the tin plating layer integrated intensity ratio of the integrated intensity I a to the sum of the integrated intensity I B of a peak corresponding to Miller indices (111) plane of the copper constituting the copper wire is 15% or more,
A cable is provided.

1 錫メッキ銅線
11 導体(銅線)
12 錫メッキ層
12a 合金層
12b 錫層
1 Tin-plated copper wire 11 conductor (copper wire)
12 tin plating layer 12a alloy layer 12b tin layer

Claims (5)

銅を含む銅線と、
前記銅線の外周に形成され、Cu 6 Sn 5 からなる錫銅化合物で構成されて前記銅線の表面を覆う合金層と、錫で構成される錫層と、が前記銅線側から順に積層された錫メッキ層と、を備え、
前記錫メッキ層に対してX線を照射して測定されるX線回折パターンにおいて、前記錫メッキ層を構成する前記錫銅化合物のミラー指数(101)面に対応するピークの積分強度IAと前記銅線を構成する前記銅のミラー指数(111)面に対応するピークの積分強度IBとの合計に対する前記積分強度IAの積分強度比率が19%以上24%以下である、
錫メッキ銅線。
Copper wire containing copper,
An alloy layer formed on the outer periphery of the copper wire, composed of a tin-copper compound composed of Cu 6 Sn 5 and covering the surface of the copper wire, and a tin layer composed of tin are laminated in order from the copper wire side With a tin-plated layer,
In X-ray diffraction pattern measured by irradiating X-rays to the tin-plated layer, and the integrated intensity I A of the peak corresponding to Miller indices (101) plane of the tin-copper compound constituting the tin plating layer the integrated intensity ratio of the integrated intensity I a to the sum of the integrated intensity I B of a peak corresponding to Miller indices (111) plane of the copper composing the copper wire is 24% or less 19% or more,
Tin plated copper wire.
前記錫メッキ層の厚さが0.1μm以上0.5μm以下である、
請求項に記載の錫メッキ銅線。
The thickness of the tin plating layer is 0.1 μm to 0.5 μm.
The tin-plated copper wire according to claim 1 .
錫溶湯に銅を添加し、前記錫溶湯における銅濃度を、前記錫溶湯の温度における銅の飽和濃度の80%以上96%以下となるように2.4質量%以上2.9質量%以下で調整する工程と、
銅濃度を調整した前記錫溶湯に、銅を含む銅線を浸漬して引き上げることで、Cu 6 Sn 5 からなる錫銅化合物で構成されて前記銅線の表面を覆う合金層と、錫で構成される錫層と、が前記銅線側から順に積層された錫メッキ層を前記銅線の表面に形成する工程と、を有し、
前記錫メッキ層に対してX線を照射して測定されるX線回折パターンにおいて、前記錫メッキ層を構成する前記錫銅化合物のミラー指数(101)面に対応するピークの積分強度IAと前記銅線を構成する前記銅のミラー指数(111)面に対応するピークの積分強度IBとの合計に対する前記積分強度IAの積分強度比率が19%以上24%以下である、
錫メッキ銅線の製造方法。
Copper is added to the tin melt, and the copper concentration in the tin melt is from 2.4% by mass to 2.9% by mass so as to be 80% to 96% of the saturation concentration of copper at the temperature of the tin melt. Adjusting process,
By immersing and pulling up a copper wire containing copper in the molten tin in which the copper concentration is adjusted , an alloy layer composed of a tin-copper compound composed of Cu 6 Sn 5 and covering the surface of the copper wire, and composed of tin Forming on the surface of the copper wire a tin plating layer in which the tin layer to be mixed is sequentially laminated from the copper wire side ,
In X-ray diffraction pattern measured by irradiating X-rays to the tin-plated layer, and the integrated intensity I A of the peak corresponding to Miller indices (101) plane of the tin-copper compound constituting the tin plating layer the integrated intensity ratio of the integrated intensity I a to the sum of the integrated intensity I B of a peak corresponding to Miller indices (111) plane of the copper composing the copper wire is 24% or less 19% or more,
Method of manufacturing tin-plated copper wire.
複数の錫メッキ銅線を撚り合わせた撚り線からなる導体と、前記導体を被覆する絶縁層と、を備える絶縁電線であって、
前記錫メッキ銅線は、
銅を含む銅線と、
前記銅線の外周に形成され、Cu 6 Sn 5 からなる錫銅化合物で構成されて前記銅線の表面を覆う合金層と、錫で構成される錫層と、が前記銅線側から順に積層された錫メッキ層と、を備え、
前記錫メッキ層に対してX線を照射して測定されるX線回折パターンにおいて、前記錫メッキ層を構成する前記錫銅化合物のミラー指数(101)面に対応するピークの積分強度IAと前記銅線を構成する前記銅のミラー指数(111)面に対応するピークの積分強度IBとの合計に対する前記積分強度IAの積分強度比率が19%以上24%以下である、
絶縁電線。
An insulated wire comprising: a conductor comprising a stranded wire obtained by twisting a plurality of tin-plated copper wires; and an insulating layer covering the conductor,
The tin-plated copper wire is
Copper wire containing copper,
An alloy layer formed on the outer periphery of the copper wire, composed of a tin-copper compound composed of Cu 6 Sn 5 and covering the surface of the copper wire, and a tin layer composed of tin are laminated in order from the copper wire side With a tin-plated layer,
In X-ray diffraction pattern measured by irradiating X-rays to the tin-plated layer, and the integrated intensity I A of the peak corresponding to Miller indices (101) plane of the tin-copper compound constituting the tin plating layer the integrated intensity ratio of the integrated intensity I a to the sum of the integrated intensity I B of a peak corresponding to Miller indices (111) plane of the copper composing the copper wire is 24% or less 19% or more,
Insulated wire.
複数の錫メッキ銅線を撚り合わせた撚り線からなる導体と、前記導体を被覆する絶縁層と、を備えるケーブルであって、
前記錫メッキ銅線は、
銅を含む銅線と、
前記銅線の外周に形成され、Cu 6 Sn 5 からなる錫銅化合物で構成されて前記銅線の表面を覆う合金層と、錫で構成される錫層と、が前記銅線側から順に積層された錫メッキ層と、を備え、
前記錫メッキ層に対してX線を照射して測定されるX線回折パターンにおいて、前記錫メッキ層を構成する前記錫銅化合物のミラー指数(101)面に対応するピークの積分強度IAと前記銅線を構成する前記銅のミラー指数(111)面に対応するピークの積分強度IBとの合計に対する前記積分強度IAの積分強度比率が19%以上24%以下である、
ケーブル。
What is claimed is: 1. A cable comprising: a conductor comprising a stranded wire obtained by twisting a plurality of tin-plated copper wires;
The tin-plated copper wire is
Copper wire containing copper,
An alloy layer formed on the outer periphery of the copper wire, composed of a tin-copper compound composed of Cu 6 Sn 5 and covering the surface of the copper wire, and a tin layer composed of tin are laminated in order from the copper wire side With a tin-plated layer,
In X-ray diffraction pattern measured by irradiating X-rays to the tin-plated layer, and the integrated intensity I A of the peak corresponding to Miller indices (101) plane of the tin-copper compound constituting the tin plating layer the integrated intensity ratio of the integrated intensity I a to the sum of the integrated intensity I B of a peak corresponding to Miller indices (111) plane of the copper composing the copper wire is 24% or less 19% or more,
cable.
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