JP6479863B2 - Infrared cut filter, imaging device, and method of manufacturing infrared cut filter - Google Patents

Description

  The present invention relates to an infrared cut filter and an imaging apparatus using the infrared cut filter.

  An imaging apparatus such as a digital camera is equipped with a semiconductor solid-state imaging device such as a charge coupled device (CCD) or a complementary metal oxide semiconductor (CMOS). The sensitivity of these solid-state imaging devices ranges from the visible region to the infrared region. For this reason, in the imaging apparatus, an infrared cut filter for blocking infrared rays is provided between the imaging lens and the solid-state imaging device. With this infrared cut filter, the sensitivity of the solid-state imaging device can be corrected so as to approach human visibility.

  Conventionally, as such an infrared cut filter, a resin substrate having an infrared reflection layer formed of a dielectric multilayer film is known (for example, see Patent Document 1).

JP 2005-338395 A

  However, since the infrared reflective layer made of a dielectric multilayer film has an incident angle dependency in which the infrared blocking characteristic changes depending on the incident angle, when the light transmitted through the infrared reflective layer is imaged, the central portion and the periphery of the image There may be a difference in color between parts.

  The present invention has been made in view of such circumstances, and an object of the present invention is to provide an infrared cut filter having a good infrared blocking characteristic with small incident angle dependency and an imaging device using the infrared cut filter. .

  In order to solve the above problems, an infrared cut filter according to an aspect of the present invention includes a transparent dielectric substrate, an infrared reflective layer that reflects infrared rays formed on one surface of the transparent dielectric substrate, and a transparent dielectric. An infrared absorption layer for absorbing infrared rays formed on the other surface of the substrate.

  The infrared absorbing layer may be formed from a resin containing an infrared absorbing dye.

  The infrared reflective layer may be formed from a dielectric multilayer film.

Transmittance of the infrared reflective layer and the wavelength at which the 50% λ _RT50% nm, the transmittance of the infrared absorbing layer when the wavelength to be 50% λ _AT50% nm, satisfying the λ _AT50% <λ _RT50% As described above, an infrared reflection layer and an infrared absorption layer may be formed.

Infrared reflective layer and the infrared-absorbing layer may be formed so as to satisfy the more _{λ AT50% -λ RT50% ≦ -10nm} .

Infrared reflective layer and the infrared-absorbing layer may be formed so as to further satisfy _{-50nm ≦ λ AT50% -λ RT50%} .

  The transparent dielectric substrate may be formed from glass. The infrared reflecting layer may be formed to reflect ultraviolet rays. A protective layer may be further provided on the infrared absorbing layer. The protective layer may have a function of preventing reflection of visible light. The protective layer may have a function of preventing transmission of ultraviolet rays. An antireflection layer for preventing reflection of visible light may be further provided on the protective layer. The antireflection layer may have a function of preventing transmission of ultraviolet rays. A primer layer may be further provided between the transparent dielectric substrate and the infrared absorption layer.

  The infrared reflective layer may be warped so that the surface facing the surface on the transparent dielectric substrate side becomes a convex surface.

  Another aspect of the present invention is an imaging apparatus. The apparatus includes the infrared cut filter and an image sensor on which light transmitted through the infrared cut filter enters.

  It should be noted that any combination of the above-described constituent elements and a representation of the present invention converted between a method, an apparatus, a system, etc. are also effective as an aspect of the present invention.

  ADVANTAGE OF THE INVENTION According to this invention, the infrared cut filter which has the favorable infrared cut off characteristic with small incident angle dependence, and an imaging device using this infrared cut filter can be provided.

It is sectional drawing for demonstrating the structure of the infrared cut filter which concerns on embodiment of this invention. An example of the spectral transmittance curve of the infrared reflective layer which consists of a dielectric multilayer film concerning the 1st comparative example is shown. An example of the spectral transmittance curve which consists of an infrared rays absorption layer concerning the 2nd comparative example is shown. An example of the spectral transmittance curve of the infrared cut filter which concerns on this embodiment is shown. It is a figure which shows the composition of the infrared rays absorption layer used for the 1st-3rd Example. It is a diagram showing a spectral transmittance of the infrared cut filter when the _{AT50% -λ RT50%} = 60nm _λ in the first embodiment. It is a diagram showing a spectral transmittance of the infrared cut filter when the _{AT50% -λ RT50%} = 50nm _λ in the first embodiment. Is a diagram showing a spectral transmittance curve of the infrared cut filter when the _{AT50% -λ RT50%} = 40nm _λ in the first embodiment. Is a diagram showing a spectral transmittance curve of the infrared cut filter when the _{AT50% -λ RT50%} = 30nm _λ in the first embodiment. Is a diagram showing a spectral transmittance curve of the infrared cut filter when the _{AT50% -λ RT50%} = 20nm _λ in the first embodiment. Is a diagram showing a spectral transmittance curve of the infrared cut filter when the _{AT50% -λ RT50%} = 10nm _λ in the first embodiment. Λ _AT50% -λ _RT50% in the first embodiment = a diagram showing a spectral transmittance curve of the infrared cut filter when the 0 nm. Λ _AT50% -λ _RT50% in the first embodiment = a diagram showing a spectral transmittance curve of the infrared cut filter when the -10 nm. Λ _AT50% -λ _RT50% in the first embodiment = a diagram showing a spectral transmittance curve of the infrared cut filter when the -20 nm. Λ _AT50% -λ _RT50% in the first embodiment = a diagram showing a spectral transmittance curve of the infrared cut filter when the -30 nm. Λ _AT50% -λ _RT50% in the first embodiment = a diagram showing a spectral transmittance curve of the infrared cut filter when the -40 nm. Λ _AT50% -λ _RT50% in the first embodiment = a diagram showing a spectral transmittance curve of the infrared cut filter when the -50 nm. Λ _AT50% -λ _RT50% in the first embodiment = a diagram showing a spectral transmittance curve of the infrared cut filter when the -60 nm. It is a diagram showing a spectral transmittance of the infrared cut filter when the _{AT50% -λ RT50%} = 60nm _λ in the second embodiment. It is a diagram showing a spectral transmittance of the infrared cut filter when the _{AT50% -λ RT50%} = 50nm _λ in the second embodiment. Is a diagram showing a spectral transmittance curve of the infrared cut filter when the _{AT50% -λ RT50%} = 40nm _λ in the second embodiment. Is a diagram showing a spectral transmittance curve of the infrared cut filter when the _{AT50% -λ RT50%} = 30nm _λ in the second embodiment. Is a diagram showing a spectral transmittance curve of the infrared cut filter when the _{AT50% -λ RT50%} = 20nm _λ in the second embodiment. Is a diagram showing a spectral transmittance curve of the infrared cut filter when the _{AT50% -λ RT50%} = 10nm _λ in the second embodiment. Λ _AT50% -λ _RT50% in the second embodiment = a diagram showing a spectral transmittance curve of the infrared cut filter when the 0 nm. Λ _AT50% -λ _RT50% in the second embodiment = a diagram showing a spectral transmittance curve of the infrared cut filter when the -10 nm. Λ _AT50% -λ _RT50% in the second embodiment = a diagram showing a spectral transmittance curve of the infrared cut filter when the -20 nm. Λ _AT50% -λ _RT50% in the second embodiment = a diagram showing a spectral transmittance curve of the infrared cut filter when the -30 nm. Λ _AT50% -λ _RT50% in the second embodiment = a diagram showing a spectral transmittance curve of the infrared cut filter when the -40 nm. Λ _AT50% -λ _RT50% in the second embodiment = a diagram showing a spectral transmittance curve of the infrared cut filter when the -50 nm. Λ _AT50% -λ _RT50% in the second embodiment = a diagram showing a spectral transmittance curve of the infrared cut filter when the -60 nm. It is a diagram showing a spectral transmittance of the infrared cut filter when the _{AT50% -λ RT50%} = 60nm _λ in the third embodiment. It is a diagram showing a spectral transmittance of the infrared cut filter when the _{AT50% -λ RT50%} = 50nm _λ in the third embodiment. 3 is a diagram showing a spectral transmittance curve of the infrared cut filter when the _{AT50% -λ RT50%} = 40nm _λ in Example. 3 is a diagram showing a spectral transmittance curve of the infrared cut filter when the _{AT50% -λ RT50%} = 30nm _λ in Example. 3 is a diagram showing a spectral transmittance curve of the infrared cut filter when the _{AT50% -λ RT50%} = 20nm _λ in Example. 3 is a diagram showing a spectral transmittance curve of the infrared cut filter when the _{AT50% -λ RT50%} = 10nm _λ in Example. The 3 lambda in Example _{AT50% -λ RT50%} = a diagram showing a spectral transmittance curve of the infrared cut filter when the 0 nm. The 3 lambda in Example _{AT50% -λ RT50%} = a diagram showing a spectral transmittance curve of the infrared cut filter when the -10 nm. The 3 lambda in Example _{AT50% -λ RT50%} = a diagram showing a spectral transmittance curve of the infrared cut filter when the -20 nm. The 3 lambda in Example _{AT50% -λ RT50%} = a diagram showing a spectral transmittance curve of the infrared cut filter when the -30 nm. The 3 lambda in Example _{AT50% -λ RT50%} = a diagram showing a spectral transmittance curve of the infrared cut filter when the -40 nm. The 3 lambda in Example _{AT50% -λ RT50%} = a diagram showing a spectral transmittance curve of the infrared cut filter when the -50 nm. The 3 lambda in Example _{AT50% -λ RT50%} = a diagram showing a spectral transmittance curve of the infrared cut filter when the -60 nm. It is a figure which shows the table | surface which put together the main parameters of the spectral transmittance curve shown to Fig.6 (a)-(m). It is a figure which shows the table | surface which put together the main parameters of the spectral transmittance curve shown to Fig.7 (a)-(m). It is a figure which shows the table | surface which put together the main parameters of the spectral transmittance curve shown to Fig.8 (a)-(m). It is a figure which shows the relationship between the difference of the cutoff wavelength of the infrared rays absorption layer in 1st Example, and the cutoff wavelength of an infrared reflective layer, and the steepness of the transient area | region of a spectral transmittance curve. It is a figure which shows the relationship between the difference of the cutoff wavelength of the infrared absorption layer in 1st Example, and the cutoff wavelength of an infrared reflective layer, and the amount of shifts of the cutoff wavelength when an incident angle changes from 0 degree to 35 degrees. is there. It is a figure which shows the relationship between the difference of the cutoff wavelength of the infrared rays absorption layer in 2nd Example, and the cutoff wavelength of an infrared rays reflection layer, and the steepness of the transient area | region of a spectral transmittance curve. It is a figure which shows the relationship between the difference of the cutoff wavelength of the infrared rays absorption layer in 2nd Example, and the cutoff wavelength of an infrared reflective layer, and the shift amount of cutoff wavelength when an incident angle changes from 0 degree to 35 degrees. is there. It is a figure which shows the relationship between the difference of the cutoff wavelength of the infrared rays absorption layer in 3rd Example, and the cutoff wavelength of an infrared reflective layer, and the steepness of the transient area | region of a spectral transmittance curve. It is a figure which shows the relationship between the difference of the cutoff wavelength of the infrared rays absorption layer in 3rd Example, and the cutoff wavelength of an infrared reflective layer, and the shift amount of cutoff wavelength when an incident angle changes from 0 degree to 35 degrees. is there. It is a figure which shows the infrared cut filter which concerns on another embodiment of this invention. It is a figure which shows the infrared cut filter which concerns on another embodiment of this invention. It is a figure which shows the infrared cut filter which concerns on another embodiment of this invention. It is a figure which shows the infrared cut filter which concerns on another embodiment of this invention. It is a figure for demonstrating the imaging device using the infrared cut filter which concerns on embodiment of this invention. It is a figure which shows the spectral transmittance curve when the cutoff wavelength of an infrared reflective layer is changed. The spectral transmittance curve of the infrared rays absorption layer single-piece | unit used in 1st Example is shown. The spectral transmittance curve of the infrared rays absorption layer single-piece | unit used in 2nd Example is shown. The spectral transmittance curve of the infrared rays absorption layer single-piece | unit used in 3rd Example is shown.

  FIG. 1 is a cross-sectional view for explaining the configuration of an infrared cut filter 10 according to an embodiment of the present invention. As shown in FIG. 1, the infrared cut filter 10 includes a transparent dielectric substrate 12, an infrared reflection layer 14, and an infrared absorption layer 16. The infrared reflecting layer 14 is formed on one surface of the transparent dielectric substrate 12. The infrared absorption layer 16 is formed on the other surface of the transparent dielectric substrate 12.

  The infrared cut filter 10 shown in FIG. 1 is provided between an imaging lens and an imaging element, for example, in a digital camera. The infrared cut filter 10 is mounted so that light is incident from the infrared reflection layer 14 and light is emitted from the infrared absorption layer 16. That is, in the mounted state, the infrared reflection layer 14 faces the imaging lens, and the infrared absorption layer 16 faces the imaging element.

  The transparent dielectric substrate 12 may be a plate-like body having a thickness of about 0.1 mm to 0.3 mm, for example. The material constituting the transparent dielectric substrate 12 is not particularly limited as long as it transmits visible light, and may be glass, for example. A glass substrate formed of glass is preferable from the viewpoint of cost because it is inexpensive. Alternatively, as the transparent dielectric substrate 12, a synthetic resin film or a synthetic resin substrate such as PMMA (Polymethylmethacrylate), PET (Polyethylene terephthalate), PC (Polycarbonate), PI (Polyimide) can be used.

As described above, the infrared reflection layer 14 is formed on one surface of the transparent dielectric substrate 12 and functions as a light incident surface. The infrared reflection layer 14 is configured to transmit visible light and reflect infrared light. The infrared reflective layer 14 may be formed of a dielectric multilayer film in which dielectrics having different refractive indexes are stacked in a multilayer. The dielectric multilayer film can freely design optical characteristics such as spectral transmittance characteristics by controlling the refractive index and layer thickness of each layer. The infrared reflective layer 14 may be formed by alternately depositing a titanium oxide (TiO ₂ ) layer and a silicon oxide (SiO ₂ ) layer having different refractive indexes on the transparent dielectric substrate 12, for example. In addition to TiO ₂ and SiO ₂ , dielectric materials such as MgF ₂ , Al ₂ O ₃ , MgO, ZrO ₂ , Nb ₂ O ₅ , Ta ₂ O ₅ can also be used as the material for the dielectric multilayer film.

  As described above, the infrared absorption layer 16 is formed on the other surface of the transparent dielectric substrate 12 and functions as a light emission surface. The infrared absorbing layer 16 is configured to transmit visible light and absorb infrared light. The light that has entered the infrared cut filter 10 passes through the infrared reflection layer 14 and the transparent dielectric substrate 12 and then enters the infrared absorption layer 16, so that the infrared absorption layer 16 includes the infrared reflection layer 14 and the transparent dielectric substrate 12. It absorbs the infrared rays that were not blocked by.

  The infrared absorption layer 16 may be formed by depositing a resin containing an infrared absorption pigment on the transparent dielectric substrate 12. The infrared absorbing layer 16 may be a solid film formed by adding or dissolving or dispersing an appropriate infrared absorbing dye in a resin matrix, and drying and curing. As the infrared absorbing dye, an azo compound, a diimonium compound, a dithiol metal complex system, a phthalocyanine compound, a cyanine compound, or the like may be used, and these may be used in combination. In addition, the resin matrix is required to hold a dissolved or dispersed infrared absorbing dye and to be a transparent dielectric, and polyester, polyacryl, polyolefin, polycarbonate, polycycloolefin, polyvinyl butyral, etc. should be used. Can do. Since these resin matrices are inexpensive, they are preferable from the viewpoint of cost.

  Next, the operation of the infrared cut filter 10 according to this embodiment will be described. First, the operation of the infrared cut filter according to the comparative example will be described.

  FIG. 2 shows a spectral transmittance curve of an infrared cut filter in which only an infrared reflection layer made of a dielectric multilayer film is formed on a glass substrate as a first comparative example. Moreover, FIG. 3 shows the spectral transmittance curve of the infrared cut filter which formed only the infrared rays absorption layer which consists of a resin matrix containing an infrared absorption pigment | dye on the glass substrate as a 2nd comparative example.

In the infrared cut filter according to the first comparative example, as shown in FIG. 2, the incident angle dependency of the cutoff characteristic, which is a characteristic of the dielectric multilayer film, is observed. In FIG. 2, the solid line indicates the spectral transmittance curve when the incident angle is 0 °, the broken line indicates the spectral transmittance curve when the incident angle is 25 °, and the alternate long and short dash line indicates the spectral transmittance when the incident angle is 35 °. The transmittance curve is shown. When transmittance and the wavelength at which _50% λ _RT50%, but when the incident angle is 0 ° is lambda _RT50% = about 655 nm, the incident angle is 25 ° λ _RT50% = about 637 nm, incident When the angle is 35 °, λ RT50 _% = about 625 nm. Thus, in the infrared cut filter according to the first comparative example, when the incident angle changes from 0 ° to 35 °, _λRT50% is shifted to the short wavelength side by about 30 nm.

  When an infrared cut filter is applied to an image sensor, light having a small incident angle (for example, an incident angle of 0 °) is normally incident on the center of the image sensor. Light having a large incident angle (for example, an incident angle of 25 ° or 35 °) is incident on the peripheral portion. Therefore, when an infrared cut filter having an infrared blocking characteristic as shown in FIG. 2 is applied to an image pickup device, the spectral transmittance curve characteristic of light incident on the image pickup device (particularly around a wavelength of 650 nm, depending on the position of the light receiving surface of the image pickup device). Spectral characteristics) are different. This causes a phenomenon in which the color is different between the central portion and the peripheral portion of the image, which may adversely affect the color reproducibility.

  In addition, in the infrared cut filter according to the second comparative example, unlike the infrared cut filter according to the first comparative example, there is no incident angle dependency of the cutoff characteristic. However, as shown in FIG. 3, in the infrared cut filter according to the second comparative example, the spectral transmittance curve in the transient region where the transmittance changes from a relatively high region to a low region gradually decreases. In general, an infrared cut filter has the transition region in the vicinity of a wavelength of 600 nm to 700 nm so as not to affect the color reproducibility, and the transmittance in this region changes sharply (“sharp cut characteristic”). Called). Therefore, in the infrared cut filter according to the second comparative example, it is difficult to satisfactorily realize control of color reproducibility.

  In consideration of the drawbacks in these comparative examples, the present inventor formed an infrared reflecting layer 14 on one surface of the transparent dielectric substrate 12 and formed an infrared absorbing layer 16 on the other surface, thereby blocking the blocking. It was found that the incident angle dependency of the characteristic is small and that a good sharp cut characteristic can be realized.

  FIG. 4 shows a spectral transmittance curve of the infrared cut filter 10 according to the present embodiment. Also in FIG. 4, the solid line shows the spectral transmittance curve when the incident angle is 0 °, the broken line shows the spectral transmittance curve when the incident angle is 25 °, and the one-dot chain line shows the spectral transmittance when the incident angle is 35 °. The transmittance curve is shown.

The characteristics of the infrared cut filter 10 according to this embodiment are determined by a combination of the optical characteristics of the infrared reflection layer 14 and the optical characteristics of the infrared absorption layer 16. In this case the infrared reflective layer alone, the wavelength at which transmittance is 50% at an incident angle of 0 ° λ _RT50% (nm) and to the wavelength lambda _AT50% transmittance in the infrared-absorbing layer alone is 50% (nm) And Figure 4 shows a _{λ AT50% = λ RT50% -20nm} , i.e. the spectral transmittance curve of the infrared cut filter 10 when lambda _AT50% is 20nm shorter than lambda _RT50%.

When the wavelength at which the transmittance of the infrared cut filter 10 according to the present embodiment is 0% at an incident angle of 0 ° is λ _T50% (nm), as shown in FIG. is a _T50% = about 646 nm lambda when the incident angle is 0 °, λ _T50% when the incident angle is 25 ° = about 645 nm, incident angle when the 35 ° λ _T50% = about 633nm It is. As described above, in the infrared cut filter 10 according to the present embodiment, even when the incident angle changes from 0 ° to 35 °, λ _T50% is shifted only to the short wavelength side by about 13 nm, and the incident angle of _λT50% . The dependency is smaller than the incident angle dependency of λ _{RT 50% in} the first comparative example. As can be seen from FIG. 4, in the region where the transmittance is higher than 50%, there is almost no difference in the spectral transmittance curve even if the incident angle changes. On the other hand, in the region where the transmittance is lower than 50%, a difference appears in the spectral transmittance curve when the incident angle changes. However, the difference in the spectral transmittance curve in the region where the transmittance is lower than 50% causes the color reproducibility. Since the impact is small, it is not a problem.

  As shown in FIG. 4, the infrared cut filter 10 according to the present embodiment has a transient region in the vicinity of a wavelength of 600 nm to 700 nm, and the transmittance changes sharply in this region. Can be realized.

  The optical characteristics of the infrared cut filter 10 according to this embodiment are determined by the combination of the infrared reflection layer 14 and the infrared absorption layer 16. Hereinafter, preferable optical characteristics of the infrared reflecting layer 14 and the infrared absorbing layer 16 will be described.

First, suitable optical characteristics of the infrared reflecting layer 14 will be described. The infrared reflecting layer 14 is designed to transmit visible light in a band of at least 400 nm to 600 nm and reflect infrared light having a wavelength of at least 750 nm in view of required performance. In the transition region between the transmission region and the reflection region, a wavelength at which the spectral transmittance is 50 _% is defined as a cutoff wavelength λ _RT50% . Although also on the spectral sensitivity region of an imaging element, lambda _RT50% of the infrared reflective layer 14 is a region of the cutoff wavelength lambda _AT50% of the infrared absorbing layer 16, preferably λ _AT50% <λ _RT50% It is preferable to set as follows.

  The infrared reflective layer 14 is designed so that the transmittance in the visible region is as high as possible. This is because light in the visible region necessary for constructing an image is made to reach the light receiving surface of the image sensor as much as possible. On the other hand, the infrared reflective layer 14 is designed so that the transmittance in the infrared region is as low as possible. This is to block as much as possible light rays that do not contribute to the image construction or are harmful. The infrared reflective layer 14 has, for example, an average spectral transmittance of 90% or more in a visible region of at least a wavelength range of 400 nm to 600 nm and a spectral transmittance of less than 2% in an infrared region of at least a wavelength of 750 nm. preferable.

Furthermore, the infrared reflective layer 14 preferably has a sharp change in spectral transmittance in a transient region (referred to as “sharp cut characteristic”). This is because if the sharp cut characteristics are lost and the transition region becomes too large, it becomes difficult to control the color reproducibility. When the steepness of the transmittance in the transient region is defined as λ _RSLOPE = | λ _{RT50 %} −λ _RT2% | (λ _RT2% is a wavelength at which the spectral transmittance is 2%), λ _RSLOPE of the infrared reflecting layer 14 is as much as possible. For example, λ _RSLOPE is preferably less than 70 nm.

In the spectral transmittance curve shown in FIG. 2, the average spectral transmittance in the visible region is 90% or more in any of the incident angles of 0 °, 25 °, and 35 °, and the average spectral transmittance in the infrared region is 2 %. Furthermore, in the spectral transmittance curve shown in FIG. 2, λ _RSLOPE is less than 70 nm at any of incident angles of 0 °, 25 °, and 35 °. Therefore, the infrared absorption layer 16 having the spectral transmittance curve shown in FIG. 2 can be suitably applied to the infrared cut filter 10 according to the present embodiment.

  Next, suitable optical characteristics of the infrared absorption layer 16 will be described. In the present embodiment, the optical characteristics required for the infrared absorption layer 16 vary depending on the optical characteristics of the infrared reflection layer 14 to be combined.

In the present embodiment, it cut-off wavelength lambda _AT50% of the infrared absorbing layer 16 is less than the cutoff wavelength lambda _RT50% of the infrared reflective layer 14, i.e., is preferably λ _AT50% <λ _RT50% . When the infrared absorption layer 16 satisfies this condition, the incident angle dependency of the infrared cut-off characteristic of the infrared cut filter 10, in other words, the cutoff wavelength of the infrared cut filter 10 when the incident angle changes from 0 ° to 35 °. The shift amount of _λT50% can be reduced.

  Furthermore, in this embodiment, it is preferable that the average transmittance of the infrared absorption layer 16 in the visible region is as high as possible. This is because when the average transmittance of the infrared absorption layer 16 is low, the amount of light reaching the imaging device is reduced. For example, the average transmittance of the infrared absorption layer 16 at a wavelength of 400 nm to 600 nm is preferably 80% or more.

In the present embodiment, the spectral transmittance of the infrared absorption layer 16 is not limited in the region of a wavelength longer than _λRT2% . This is because, in this region, the spectral transmittance of the infrared reflecting layer 14 is very small, so that the transmittance of the infrared cut filter 10 as a whole can be lowered.

In the present embodiment, it is preferable that the spectral transmittance curve of the infrared absorption layer 16 monotonously decreases in a transient region (for example, 600 nm to λ _RT2% ). It is easy to obtain a standard of the cutoff wavelength λ _T50% of the infrared cut filter 10 by synthesis with the infrared reflective layer 14, the advantage that it can be set easily and freely, and the advantage that the color reproducibility can be easily controlled. Because it is.

Examples of infrared cut filters using an infrared reflection film and an infrared absorption layer that satisfy all of the above preferred conditions are shown as first to third examples, and the cutoff wavelength λ _RT of the infrared reflection layer 14 is _50%. And a detailed study on the relationship between the cutoff wavelength λ _{AT of 50%} of the infrared absorbing layer 16.

  FIG. 5 shows the composition of the infrared absorption layer used in the first to third examples. The infrared absorption layer used in the first example was formed by the following procedure. First, MEK (methyl ethyl ketone) was used as a solvent, KAYASORB CY-10 (cyanine compound) manufactured by Nippon Kayaku Co., Ltd. was 0.002 / 0.807 = 0.25 wt%, and NIA-7200H (azo compound) manufactured by Hakkor Chemical Co. was 0.001 / 0.807. = 0.12 wt%, KAYASORB IRG-022 (diimonium compound) manufactured by Nippon Kayaku Co., Ltd. is added to 0.003 / 0.807 = 0.37 wt% to 0.055 g of PVB (polyvinyl butyral). Stir for 10-15 minutes after blending. This liquid is uniformly applied on one surface of the glass substrate by a flow coating method, and left to stand for 2 hours to be sufficiently dried. The said glass plate was heated at 140 degreeC for 20 minutes, and the infrared rays absorption layer was formed. The infrared absorbing layers used in the second and third examples were also formed in the same procedure using the dye shown in FIG. Spectral transmittance curves of the thus formed infrared absorption film alone are shown in FIGS. 21, 22, and 23. FIG. The average transmittances at wavelengths of 400 nm to 600 nm in the first to third examples are 80.4%, 80.6%, and 80.7%, respectively. Furthermore, it tends to be monotonously decreasing in the wavelength region longer than 600 nm. As shown in FIG. 20 to FIG. 23, the spectral transmittance curve of the infrared absorption film has a wavelength of 700 nm to 800 nm (refer to the first example: FIG. 20) at a wavelength of 600 nm or more, and in some cases a wavelength of 700 nm to 750 nm (second And the third embodiment (see FIGS. 22 and 23) has a minimum value of transmittance.

A more preferable condition of the cutoff wavelength λ _{RT 50% of the} infrared reflecting layer 14 and the cutoff wavelength λ _{AT 50%} of the infrared absorbing layer 16 will be described. FIG 6 (a) ~ FIG 6 (m) shows the spectral transmittance curve of the infrared cut filter when the difference between the lambda _AT50% and lambda _RT50% in the first embodiment is changed by 10 nm. Figure 7 (a) ~ FIG 7 (m) shows the spectral transmittance curve of the infrared cut filter when the difference between the lambda _AT50% and lambda _RT50% in the second embodiment is changed by 10 nm. Figure 8 (a) ~ FIG 8 (m) shows the spectral transmittance curve of the infrared cut filter when the difference between the lambda _AT50% and lambda _RT50% in the third embodiment is changed by 10 nm. 6 (a) to (m), FIGS. 7 (a) to (m), and FIGS. 8 (a) to (m), a solid line indicates a spectral transmittance curve when the incident angle is 0 °, and a broken line indicates The spectral transmittance curve when the incident angle is 25 ° is shown, and the alternate long and short dash line shows the spectral transmittance curve when the incident angle is 35 °. In any of the embodiments, as shown in FIG. 20, the λ _{AT 50%} of the infrared absorption layer 16 is fixed, and the cutoff wavelength λ _{RT 50%} of the infrared reflection layer 14 is changed, so that λ _{AT 50%} and λ The difference from _{RT 50%} was set. Since the infrared reflective layer 14 is formed of a dielectric multilayer film, the transition region can be easily changed by adjusting the film thickness and the number of layers. Although FIG. 20 shows how the spectral transmittance curve of the infrared reflective layer according to the first example changes, the spectral transmittance curve similarly changes for the infrared reflective layer according to the second and third examples. Can be made.

FIG. 6 (a), the FIG. 7 (a), the 8 (a) is, 60 nm longer than the first to 3 lambda in Example _{AT50% -λ RT50%} = 60nm, i.e. lambda _AT50% is lambda _RT50% respectively The spectral transmittance curve of the infrared cut filter in the case is shown. FIGS. 6B, 7B, and 8B _show λ _AT50% −λ _{RT50 %} = 50 nm in the first to third embodiments, that is, _λAT50% is ₅₀ nm longer than _λRT50%. The spectral transmittance curve of the infrared cut filter in the case is shown. FIG. 6 (c), the FIG. 7 (c), the FIG. 8 (c), 40 nm longer than the first to 3 lambda in Example _{AT50% -λ RT50%} = 40nm, i.e. lambda _AT50% is lambda _RT50% respectively The spectral transmittance curve of the infrared cut filter in the case is shown. FIG. 6 (d), the FIG. 7 (d), the FIG. 8 (d) is, 30 nm longer than the first to 3 lambda in Example _{AT50% -λ RT50%} = 30nm, i.e. lambda _AT50% is lambda _RT50% respectively The spectral transmittance curve of the infrared cut filter in the case is shown. FIG. 6 (e), the FIG. 7 (e), the Figure 8 (e) is, 20 nm longer than the first to 3 lambda in Example _{AT50% -λ RT50%} = 20nm, i.e. lambda _AT50% is lambda _RT50% respectively The spectral transmittance curve of the infrared cut filter in the case is shown. FIG. 6 (f), the FIG. 7 (f), FIG. 8 (f) is, 10 nm longer than the first to 3 lambda in Example _{AT50% -λ RT50%} = 10nm, i.e. lambda _AT50% is lambda _RT50% respectively The spectral transmittance curve of the infrared cut filter in the case is shown. 6 (g), FIG. 7 (g), and FIG. 8 (g) are the cases where λ _AT50% −λ _{RT50 %} = 0 nm in the first to third embodiments, that is, _λAT50% and _{λRT50 %} are equal. The spectral transmittance curve of an infrared cut filter is shown. FIG. 6 (h), the FIG. 7 (h), Fig. 8 (h) is, lambda _AT50% in the first to third embodiments, respectively -λ _RT50% = -10nm, i.e. 10nm than lambda _AT50% is lambda _RT50% The spectral transmittance curve of the infrared cut filter in the case of being short is shown. FIG 6 (i), Fig. 7 (i), FIG. 8 (i) is, lambda _AT50% in the first to third embodiments, respectively -λ _RT50% = -20nm, i.e. 20nm than lambda _AT50% is lambda _RT50% The spectral transmittance curve of the infrared cut filter in the case of being short is shown. FIG 6 (j), Fig. 7 (j), Fig. 8 (j) is, lambda _AT50% in the first to third embodiments, respectively -λ _RT50% = -30nm, i.e. 30nm than lambda _AT50% is lambda _RT50% The spectral transmittance curve of the infrared cut filter in the case of being short is shown. FIG 6 (k), FIG. 7 (k), FIG. 8 (k) are, lambda _AT50% in the first to third embodiments, respectively -λ _RT50% = -40nm, i.e. 40nm than lambda _AT50% is lambda _RT50% The spectral transmittance curve of the infrared cut filter in the case of being short is shown. 6 (l), FIG. 7 (l), and FIG. 8 (l) are respectively _λAT50% −λRT50 _% = − _{50 nm} in the first to third embodiments, that is, _λAT50% is ₅₀ nm than _λRT50%. The spectral transmittance curve of the infrared cut filter in the case of being short is shown. FIG 6 (m), FIG. 7 (m), FIG. 8 (m) is, lambda _AT50% in the first to third embodiments, respectively -λ _RT50% = -60nm, i.e. 60nm than lambda _AT50% is lambda _RT50% The spectral transmittance curve of the infrared cut filter in the case of being short is shown. Also, the spectral transmittance curves (first example) of FIGS. 6 (a) to 6 (m), the spectral transmittance curves (second example) shown in FIGS. 7 (a) to (m), and FIG. 8 (a). Main parameters of the spectral transmittance curve (third example) shown in FIGS. 9 to 10 are shown in FIGS. 9, 10, and 11, respectively.

In evaluating the spectral transmittance curves shown in FIGS. 6 (a) to (m), FIGS. 7 (a) to (m), and FIGS. 8 (a) to (m), the present inventor The following (1) and (2) were set as the fundamentally required characteristics (hereinafter referred to as “basic characteristics”).
(1) Average transmittance T _ave > 70% at wavelengths of 400 nm to 600 nm
(2) λ _SLOPE = | λ _T50% -λ _T2% | <70 nm (sharp cut characteristics)

Regarding the basic characteristics of the average transmittance T _ave shown in (1) above, the spectral transmittance curve in the case of λ _AT50% -λ _{RT50 %} = 60 nm shown in FIG. 8A does not satisfy this required characteristic. The spectral transmittance curves shown in FIGS. 6A to 6M, FIGS. 7A to 7M, and FIGS. 8B to 8M satisfy this basic characteristic.

FIG. 12 (a), the FIG. 13 (a), the FIG. 14 (a), cut-off wavelength of the cut-off wavelength lambda _AT50% and the infrared reflective layer 14 of the infrared absorbing layer 16 in the first to third embodiments, respectively lambda _{RT50 %} difference and λ _AT50% -λ _RT50%, steepness lambda _SLOPE = the transition region of the spectral transmittance curve of | showing a relationship between | lambda _T50% 1-? _T2%. As described above, in the infrared cut filter, the steepness (sharp cut characteristic) of the transient region of the spectral transmittance curve is preferably as small as possible, and is preferably less than 70 nm from the basic characteristic (2). Thus FIG. 12 (a), the FIG. 13 (a), the more FIG. 14 (a), the it is desirable that _{-50 ≦ λ AT50% -λ RT50%} .

Furthermore, the present inventor has set the following (3) as a characteristic for improving the incident angle dependency of the infrared ray blocking characteristic, which is the main subject of the present application. Assuming that the shift amount of the cutoff wavelength λ _T50% when the incident angle is changed from 0 ° to 35 ° is Δλ _T50% ,
(3) Δλ _T50% <25 nm

FIG. 12 (b), the FIG. 13 (b), the FIG. 14 (b), the cut-off wavelength of the cut-off wavelength lambda _AT50% and the infrared reflective layer 14 of the infrared absorbing layer 16 in the first to third embodiments, respectively lambda _{RT50 %} indicating the difference and λ _AT50% -λ _RT50%, the relationship between the _T50% cut-off wavelength lambda _T50% shift amount Δλ of when the incident angle is changed to 35 ° from 0 ° to. From the above required characteristic (3), Δλ _T50% is preferably less than 25 nm. Therefore, from FIG. 12B, FIG. 13B, and FIG. 14B, it is desirable that λ _AT50% −λ RT50 _% ≦ −10 nm.

From the above consideration, it is desirable that the difference between the cutoff wavelength λ _{AT 50%} of the infrared absorption layer 16 and the cutoff wavelength λ _{RT 50%} of the infrared reflection layer 14 satisfies the following condition.
−50 nm ≦ λ _{AT 50%} −λ _{RT 50%} ≦ −10 nm
By satisfying all of the above required characteristics, it is possible to obtain a good image in which image quality factors such as transmittance and color quality are balanced. Note that the above-described required characteristics are examples, and the required specifications can be changed to match the characteristics of the image sensor, for example.

The cutoff wavelength λ _T50% when the incident angle of light to the infrared cut filter is 35 ° is calculated as λ _T50% −Δλ _T50% . Based on the parameters of the first to third embodiments shown in FIGS. 9 to 11, the cutoff wavelength λ at an incident angle of 35 ° when the above condition (−50 nm ≦ λ _AT50% −λ RT50 _% ≦ −10 nm) is satisfied. calculating the _{T50%, λ T50%} = the 607nm~647nm (λ _AT50% in the third embodiment shown in FIG. 11 -λ _RT50% = time of -60nm, 630nm-23nm = 607nm, first shown in FIG. 9 when λ _AT50% -λ _RT50% = -50nm example, 649-2 = 647nm). Therefore, in order to obtain a good image, it is desirable that the cutoff wavelength λ _T50% when the incident angle of light to the infrared cut filter is 35 ° is 607 nm to 647 nm.

  The infrared cut filter 10 according to this embodiment has been described above. According to the infrared cut filter 10 according to the present embodiment, the infrared reflection layer 14 is formed on one surface of the transparent dielectric substrate 12, and the infrared absorption layer 16 is formed on the other surface. It is possible to provide an infrared cut filter having a small number of good infrared blocking characteristics.

  Further, in the infrared cut filter 10 according to the present embodiment, a general glass substrate can be used as the transparent dielectric substrate 12. Since it is not necessary to use a glass that is brittle and difficult to process such as polishing, such as fluorophosphate glass, it is possible to perform general processing such as polishing and cutting, and as a result, it is easy to change the thickness such as thinning.

  In the infrared cut filter 10 according to this embodiment, the characteristics of the infrared cut filter 10 as a whole are determined by the combination of the optical characteristics of the infrared reflection layer 14 and the optical characteristics of the infrared absorption layer 16. The optical characteristics of the infrared reflecting layer 14 can be easily changed by adjusting the layer structure of the dielectric multilayer film. The optical characteristics of the infrared absorbing layer 16 can be easily changed by adjusting the type and concentration of the infrared absorbing dye contained in the resin matrix and adjusting the thickness of the infrared absorbing layer. On the other hand, for example, when fluorophosphate glass is used to provide an infrared absorption function, the infrared absorption characteristics are changed by melting the fluorophosphate glass using a furnace, cutting the fluorophosphate glass, and adjusting the thickness of the fluorophosphate glass for thickness adjustment. Since polishing is required, it is not easy. Thus, the infrared cut filter 10 according to the present embodiment is also excellent in that the optical characteristics of the infrared cut filter 10 can be easily changed.

  In the infrared cut filter 10 shown in FIG. 1, the infrared reflection layer 14 may be formed to reflect ultraviolet rays. When the infrared cut filter 10 is formed of a dielectric multilayer film, the ultraviolet reflection function can be easily incorporated into the infrared cut filter 10 by adjusting the layer configuration. The color filter provided in the image sensor may have an adverse effect such as a decrease in life due to ultraviolet rays. Therefore, it is possible to avoid such an adverse effect by removing the ultraviolet rays in the infrared reflecting layer 14 located in front of the imaging device. Further, when the ultraviolet reflecting function is incorporated in the infrared reflecting layer 14, the ultraviolet absorbing light can be removed before reaching the infrared absorbing layer 16 formed of a resin matrix, so that the infrared absorbing layer 16 can be prevented from being deteriorated.

  FIG. 15 shows an infrared cut filter 10 according to another embodiment of the present invention. In the infrared cut filter 10 shown in FIG. 15, the same or corresponding components as those of the infrared cut filter shown in FIG.

  The infrared cut filter 10 according to the present embodiment is different from the infrared cut filter shown in FIG. 1 in that a protective layer 18 is formed on the infrared absorption layer 16. As shown in FIG. 15, the protective layer 18 is formed on the surface of the infrared absorption layer 16 that faces the surface on the transparent dielectric substrate 12 side. In the infrared cut filter 10 according to the present embodiment, light is emitted from the protective layer 18.

  Since the infrared absorbing layer 16 is a layer containing an infrared absorbing dye, it includes an organic component. Therefore, the scratch resistance and humidity resistance are relatively weak. Therefore, the infrared absorption layer 16 can be protected by providing the protective layer 18 having a composition different from that of the infrared absorption layer 16 on the infrared absorption layer 16 as in the present embodiment.

The protective layer 18 may be a sol-gel hard coating using, for example, TEOS (tetraethoxysilane) as a main raw material. The protective layer 18 is, for example, (a) a hard coat agent is applied on the infrared absorption layer 16, (b) a sol-gel film is coated on the infrared absorption layer 16, and (c) an SiO ₂ layer on the infrared absorption layer 16. However, it is not particularly limited to these methods.

  In the infrared cut filter 10 shown in FIG. 15, the protective layer 18 may be formed to prevent reflection of visible light. By covering the infrared absorbing layer 16 with a material having a refractive index lower than that of the infrared absorbing layer 16, the protective layer 18 can have a visible light reflection preventing function. As a result, the visible light transmittance of the infrared cut filter 10 as a whole can be improved. Alternatively, an antireflection film made of a dielectric multilayer film may be formed on the infrared absorption layer 16 as the protective layer 18.

  In the infrared cut filter 10 shown in FIG. 15, the protective layer 18 may be formed so as to prevent the transmission of ultraviolet rays. In this case, since it is possible to prevent the ultraviolet rays incident from the light exit surface side from reaching the image sensor, it is possible to prevent deterioration of the color filter provided in the image sensor.

  FIG. 16 shows an infrared cut filter 10 according to still another embodiment of the present invention. In the infrared cut filter 10 shown in FIG. 16, the same or corresponding components as those of the infrared cut filter shown in FIGS. 1 and 15 are denoted by the same reference numerals, and redundant description is omitted as appropriate.

  The infrared cut filter 10 according to this embodiment is different from the infrared cut filter shown in FIG. 15 in that an antireflection layer 20 that prevents reflection of visible light is formed on the protective layer 18. As shown in FIG. 16, the antireflection layer 20 is formed on the surface of the protective layer 18 that faces the surface on the infrared absorption layer 16 side. In the infrared cut filter 10 according to this embodiment, light is emitted from the antireflection layer 20.

  Even when the antireflection layer 20 is formed on the protective layer 18 as in the infrared cut filter 10 according to the present embodiment, the visible light transmittance of the infrared cut filter 10 as a whole can be improved.

  In the infrared cut filter 10 shown in FIG. 16, the antireflection layer 20 may be formed so as to prevent the transmission of ultraviolet rays. In this case, since it is possible to prevent the ultraviolet rays incident from the light exit surface side from reaching the image sensor, it is possible to prevent deterioration of the color filter provided in the image sensor.

  FIG. 17 shows an infrared cut filter 10 according to still another embodiment of the present invention. In the infrared cut filter 10 shown in FIG. 17, the same or corresponding components as those of the infrared cut filter shown in FIG.

  The infrared cut filter 10 according to this embodiment is different from the infrared cut filter shown in FIG. 1 in that a primer layer 22 is formed between the transparent dielectric substrate 12 and the infrared absorption layer 16. By forming the primer layer 22 between the transparent dielectric substrate 12 and the infrared absorption layer 16, the adhesion between the transparent dielectric substrate 12 and the infrared absorption layer 16 can be improved, and the environmental resistance of the infrared cut filter 10 is improved. it can.

  FIG. 18 shows an infrared cut filter 10 according to still another embodiment of the present invention. In the infrared cut filter 10 shown in FIG. 18, the same or corresponding components as those of the infrared cut filter shown in FIG.

  The infrared cut filter 10 according to the present embodiment is different from the infrared cut filter shown in FIG. 1 in that the infrared reflective layer 14 is warped. The infrared reflective layer 14 is warped so that the surface facing the surface on the transparent dielectric substrate 12 side is a convex surface. In the present embodiment, the transparent dielectric substrate 12 and the infrared absorption layer 16 are also warped with the warp of the infrared reflecting layer 14.

  As described above, when the infrared cut filter 10 is used in an imaging apparatus, the infrared reflection layer 14 is mounted so as to face the imaging lens, and the infrared absorption layer 16 faces the imaging element. However, since the infrared cut filter 10 is very thin and small, it is not easy to distinguish between the infrared reflection layer 14 and the infrared absorption layer 16. Therefore, as in the present embodiment, by warping the infrared reflection layer 14, it is possible to visually determine which surface is the infrared reflection layer 14. By controlling the stress on the film surface when the dielectric multilayer film is deposited on the transparent dielectric substrate 12, the degree of warping of the infrared reflecting layer 14 can be adjusted within a range that does not affect the optical characteristics.

  FIG. 19 is a diagram for explaining an imaging apparatus 100 using the infrared cut filter 10 according to the embodiment of the present invention. As illustrated in FIG. 19, the imaging apparatus 100 includes an imaging lens 102, an infrared cut filter 10, and an imaging element 104. The image sensor 104 may be a semiconductor solid-state image sensor such as a CCD or a CMOS. As shown in FIG. 19, the infrared cut filter 10 is provided between the imaging lens 102 and the imaging element 104 so that the infrared reflection layer 14 faces the imaging lens 102 and the infrared absorption layer 16 faces the imaging element 104. It is done.

  As shown in FIG. 19, the light from the subject is collected by the imaging lens 102, and after the infrared rays are removed by the infrared cut filter 10, the light enters the imaging element 104. As shown in FIG. 19, light is incident on the infrared cut filter 10 from the imaging lens 102 at various incident angles. By using the infrared cut filter 10 according to the present embodiment, infrared rays are preferably used regardless of the incident angle. Since it can block | interrupt, a favorable image with high color reproducibility can be imaged.

  In the above description, the embodiment in which the infrared cut filter 10 is applied to the imaging apparatus has been described. However, the infrared cut filter 10 according to the above-described embodiment can be applied to other applications. For example, the infrared cut filter 10 can be used as a heat ray blocking film such as a windshield glass, a side window, and architectural glass of an automobile. The infrared cut filter 10 can also be used as a near infrared cut filter for a PDP (Plasma Display Panel).

  The present invention has been described based on the embodiments. This embodiment is an exemplification, and it will be understood by those skilled in the art that various modifications can be made to combinations of the respective constituent elements and processing processes, and such modifications are also within the scope of the present invention. is there.

  DESCRIPTION OF SYMBOLS 10 Infrared cut filter, 12 Transparent dielectric substrate, 14 Infrared reflective layer, 16 Infrared absorption layer, 18 Protective layer, 20 Antireflection layer, 22 Primer layer, 100 Imaging device, 102 Imaging lens, 104 Imaging element

Claims (19)

A transparent dielectric substrate;
An infrared reflecting layer for reflecting infrared rays formed on one surface of the transparent dielectric substrate;
An infrared absorbing layer that absorbs infrared rays formed on the other surface of the transparent dielectric substrate;
An infrared cut filter comprising:
The infrared reflective layer is formed of a dielectric multilayer film,
The infrared absorbing layer is formed from a resin containing an infrared absorbing dye,
Δλ _T50% <25 nm, where Δλ _T50% is the shift amount of the cutoff wavelength λ _T50% when the incident angle of light to the infrared cut filter changes from 0 ° to 35 °,
Ri cutoff wavelength lambda _T50% is 607nm~647nm der when the incident angle is 35 ° of the light to the infrared cut filter,
The transmittance of the infrared reflective layer and the wavelength at which the 50% λ _RT50% nm, when the transmittance of the infrared-absorbing layer has a wavelength to be _{50% λ AT50% nm, λ} AT50% <λ RT50% The infrared cut filter , wherein the infrared reflection layer and the infrared absorption layer are formed so as to satisfy the above . The incident angle of 0 ° of the light to the infrared cut filter, claim wherein the infrared reflective layer and the infrared-absorbing layer is formed so as to satisfy _{λ AT50% -λ RT50% ≦ -10nm} 1 The infrared cut filter according to 1. Further, Claim angle of incidence of the light on the infrared cutoff filter at 0 °, characterized in that said infrared reflective layer and the infrared-absorbing layer is formed so as to satisfy the -50nm ≦ λ _AT50% -λ _RT50% The infrared cut filter according to 2.   4. The infrared cut filter according to claim 1, wherein the spectral transmittance curve of the infrared absorbing layer has a minimum transmittance at a wavelength of 700 nm to 750 nm. 5.   The infrared cut filter according to claim 1, wherein the transparent dielectric substrate is made of glass.   The infrared cut filter according to claim 1, wherein the infrared reflection layer is formed to reflect ultraviolet rays.   The infrared cut filter according to claim 1, further comprising a protective layer on the infrared absorption layer.   The infrared cut filter according to claim 7, wherein the protective layer has a function of preventing reflection of visible light.   The infrared cut filter according to claim 7 or 8, wherein the protective layer has a function of preventing transmission of ultraviolet rays.   The infrared cut filter according to claim 7, further comprising an antireflection layer that prevents reflection of visible light on the protective layer.   The infrared cut filter according to claim 10, wherein the antireflection layer has a function of preventing transmission of ultraviolet rays.   The infrared cut filter according to claim 1, further comprising a primer layer between the transparent dielectric substrate and the infrared absorption layer.   The infrared cut filter according to any one of claims 1 to 12, wherein the infrared reflection layer is warped so that a surface facing the surface on the transparent dielectric substrate side is a convex surface.   The infrared cut filter according to claim 1, wherein the resin containing the infrared absorbing dye is PVB.   The infrared cut filter according to claim 1, wherein a thickness of the transparent dielectric substrate is 0.1 mm to 0.3 mm. The infrared cut filter according to any one of claims 1 to 15,
An image sensor on which light transmitted through the infrared cut filter is incident;
An imaging apparatus comprising: Providing a transparent dielectric substrate; and
Forming an infrared reflective layer on one surface of the transparent dielectric substrate;
Forming an infrared absorbing layer on the other surface of the transparent dielectric substrate;
An infrared cut filter manufacturing method comprising:
The infrared reflective layer is formed of a dielectric multilayer film,
The infrared absorbing layer is formed from a resin containing an infrared absorbing dye,
Δλ _T50% <25 nm, where Δλ _T50% is the shift amount of the cutoff wavelength λ _T50% when the incident angle of light to the infrared cut filter changes from 0 ° to 35 °,
The cutoff wavelength λ _T50% when the incident angle of light to the infrared cut filter is 35 ° is 607 nm to 647 nm,
When the wavelength at which the transmittance of the infrared reflecting layer is 50% is λ _{RT 50%} nm and the wavelength at which the transmittance of the infrared absorbing layer is 50% is λ _AT 50 _% nm, An infrared cut filter manufacturing method, wherein the infrared reflection layer and the infrared absorption layer are formed so as to satisfy λAT50 _% −λRT50 _% ≦ −10 _nm at an incident angle of 0 °. Further, Claim angle of incidence of the light on the infrared cutoff filter at 0 °, characterized in that said infrared reflective layer and the infrared-absorbing layer is formed so as to satisfy the -50nm ≦ λ _AT50% -λ _RT50% A method for producing an infrared cut filter according to claim 17. It is a manufacturing method of the infrared cut filter according to claim 14,
Providing a transparent dielectric substrate; and
Forming an infrared reflective layer on one surface of the transparent dielectric substrate;
Adding an infrared absorbing dye selected from a cyanine compound, a diimmonium compound, a phthalocyanine compound and an azo compound to PVB, and preparing a liquid PVB resin containing the infrared absorbing dye;
Applying the liquid PVB resin on the other surface of the transparent dielectric substrate by a flow coat apparatus and drying;
The manufacturing method of the infrared cut filter characterized by including.

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