JP6156468B2 - Light absorber and imaging device using the same - Google Patents

Description

  The present invention relates to a light absorber and an imaging device using the same.

  In an imaging device using a solid-state imaging device such as a CCD (Charge Coupled Device) or a CMOS image sensor (Complementary Metal Oxide Semiconductor Image Sensor), various optical systems are used to reproduce the color tone and obtain a clear image. A filter (optical filter) having a specific function is disposed between the imaging lens and the solid-state imaging device. A typical example is a filter (near-infrared cut filter) that blocks light in the near-infrared wavelength region in order to correct the spectral sensitivity of a solid-state image sensor to human visibility. It arrange | positions between image sensors. In addition, the imaging device adjusts the amount of incoming light to prevent the imaging device from saturating the charge generated by light reception and preventing imaging, and the optical members such as lenses and sensors in the imaging device and the like. In order to cut off stray light due to reflection or scattering from the holding member or the like, a shielding member called a diaphragm is disposed.

  In recent years, image pickup apparatuses using solid-state image pickup elements have been miniaturized and have been mounted on small electronic devices such as mobile phones. Recently, there has been an increasing demand for downsizing and higher functionality of such electronic devices themselves, and accordingly, further downsizing of imaging devices is also required.

  As a method for realizing downsizing of the imaging device, for example, a method of integrally providing a black film (light-shielding film) that functions as a diaphragm on an optical filter is known (see, for example, Patent Document 1). This method eliminates the need for a space for disposing the diaphragm, and can reduce the size of the apparatus. In addition, the number of parts can be reduced and the assembly process can be simplified.

  By the way, in order for the light-shielding film formed on the substrate such as the optical filter described above to fully perform its function, not only the light incident on the light-shielding film is shielded but also the surfaces (substrate side and substrate). Therefore, it is necessary to reduce the reflected light from the surface on the opposite side. However, a conventional optical filter or the like on which a light shielding film is formed has not yet been studied for reducing the reflected light. Therefore, the light shielding has a good light shielding property and a low light reflectance. There is a demand for a light absorber such as an optical filter provided with a film, and an image pickup apparatus including such a light absorber.

JP 2002-268120 A

  An object of the present invention is to provide a light absorber provided with a light-shielding film having good light-shielding properties and low light reflectance, and an imaging device provided with such a light absorber.

The light absorber according to one embodiment of the present invention includes a base and a light shielding film that blocks light incident on the base, and the light shielding film includes a first light absorption layer and a second light absorption. The first light absorption layer has a transmittance of 5% or less, and the low refractive index layer is a second light absorption layer. It is characterized by a lower refractive index. The light absorber according to another aspect of the present invention is characterized in that the first light absorption layer has a larger extinction coefficient than the second light absorption layer.
Here, the extinction coefficient is a constant indicating how much light the material absorbs when it enters a certain material. According to Beer's law, the light when passing a certain distance. There is a relationship of the following equation between the intensity I of the light, the intensity I ₀ of the incident light, and the extinction coefficient k.
I = I ₀ e ^−αZ
α = 4πk / λ
(Z: light penetration depth, α: absorption coefficient, λ: wavelength)
As is clear from the above formula, the extinction coefficient is wavelength-dependent, and in this specification, unless otherwise specified, it refers to the extinction coefficient at a wavelength of 550 nm.
In this specification, the refractive index also refers to the refractive index with respect to light having a wavelength of 550 nm unless otherwise specified.

  An imaging apparatus according to another aspect of the present invention includes an imaging element on which light from a subject or a light source is incident, and the light absorber disposed between the subject or the light source and the imaging element. It is a feature.

  ADVANTAGE OF THE INVENTION According to this invention, the light absorber provided with the light shielding film of favorable light-shielding property and a low light reflectivity is provided. Moreover, according to this invention, the imaging device provided with such a light absorber is provided.

It is sectional drawing which shows the light absorber of the 1st Embodiment of this invention. It is sectional drawing which expands and shows the principal part of FIG. It is sectional drawing explaining the formation method of the light shielding film of the light absorber shown in FIG. It is a top view of the optical filter shown in FIG. It is a top view which shows the modification of the 1st Embodiment of this invention. It is sectional drawing which shows the modification of the 1st Embodiment of this invention. It is sectional drawing which shows the modification of the 1st Embodiment of this invention. It is sectional drawing which shows the modification of the 1st Embodiment of this invention. It is sectional drawing which shows the principal part structure of the light absorber of the 2nd Embodiment of this invention. It is a top view which shows the light absorber of the 3rd Embodiment of this invention. It is a figure which shows the absorption spectrum of an example of the infrared rays absorption pigment | dye used by the 3rd Embodiment of this invention. It is sectional drawing which shows the modification of the 3rd Embodiment of this invention. It is sectional drawing which shows the modification of the 3rd Embodiment of this invention. It is sectional drawing which shows the modification of the 3rd Embodiment of this invention. It is sectional drawing which shows the modification of the 3rd Embodiment of this invention. It is sectional drawing which shows the imaging device of the 4th Embodiment of this invention. It is sectional drawing which shows the light absorber of other embodiment of this invention. It is a figure which shows one measurement example of the spectral transmittance curve and spectral reflectance curve of the light absorber of one Example of this invention. It is a figure which shows one measurement example of the spectral transmittance curve and spectral reflectance curve of the light absorber of the other Example of this invention. It is a figure which shows the other example of a measurement of the spectral transmittance curve and spectral reflectance curve of the light absorber of the other Example of this invention. It is a figure which shows one measurement example of the spectral transmittance curve and spectral reflectance curve of the light absorber of a reference example. It is a figure which shows one measurement example of the spectral transmittance curve and spectral reflectance curve of the light absorber of another reference example. It is a figure which shows the other measurement example of the spectral transmittance curve and spectral reflectance curve of the light absorber of another reference example.

  Embodiments of the present invention will be described below. In addition, although description is demonstrated based on drawing, those drawings are provided for illustration and this invention is not limited to those drawings at all.

(First embodiment)
FIG. 1 is a cross-sectional view schematically showing the overall configuration of the light absorber according to the first embodiment of the present invention, and FIG. 2 is an enlarged cross-sectional view showing the main part thereof.

  As shown in FIGS. 1 and 2, the light absorber 100 of the present embodiment is formed on the outer infrared portion of a near-infrared cut filter (hereinafter, also simply referred to as “filter”) 10 as a base and one main surface thereof. The light shielding film 20 is provided.

  The filter 10 is a transparent substrate 11 and a dielectric formed on one main surface of the transparent substrate 11 that transmits light in the visible wavelength region but reflects light in the ultraviolet wavelength region and the infrared wavelength region. It has an ultraviolet / infrared light reflection film 12 made of a multilayer film and an antireflection film 13 formed on the other main surface of the transparent substrate 11.

  Further, as shown in FIG. 2, the light shielding film 20 has a first light absorption layer 21, a second light absorption layer 22 and a low refractive index on the main surface of the filter 10 on the ultraviolet / infrared light reflection film 12 side. The layer 23 has a structure formed in this order.

  The first light absorption layer 21 is a layer mainly for imparting good light shielding properties to the light shielding film 20, and is a layer having an extinction coefficient of 2.5 or more. When the extinction coefficient is less than 2.5, the light transmittance of the light shielding film 20 is increased, and the light shielding property is reduced, or the layer thickness must be increased in order to reduce the transmittance. The thickness becomes unnecessarily thick. Specifically, for example, it can be composed of one or more selected from chromium, molybdenum, tungsten, iron, nickel, titanium, lower chromium oxide and the like. Here, “lower chromium oxide” refers to chromium oxide having oxygen defects. Chromium oxide without oxygen defects hardly absorbs light, whereas chromium oxide with oxygen defects increases in extinction coefficient due to the presence of oxygen defects, and therefore is used as a material constituting the first light absorption layer 21. it can.

  It is preferable that the first light absorption layer 21 itself can reduce the transmittance of incident light to 5% or less, and more preferably 3% or less. From such a viewpoint, the first light absorption layer 21 is preferably composed of one or more selected from chromium, molybdenum, and tungsten, and the thickness is preferably 40 nm or more. However, if it is too thick, the thickness of the entire light absorber 100 becomes unnecessarily large. In order to ensure the light shielding property and prevent an unnecessary increase in the thickness of the entire light absorber 100, the thickness of the first light absorption layer 21 is more preferably 50 nm to 180 nm.

  The second light absorption layer 22 is a layer for reducing the reflectance of light incident from the external space mainly on the surface of the light shielding film 20 on the low refractive index layer forming side together with the low refractive index layer 23. It is a layer having a refractive index of 1.4 to 3.0 and an extinction coefficient of 0.4 to 1.0. If either one of the refractive index and the extinction coefficient is out of the above range, the reflectance of light incident from the external space on the surface of the light shielding film 20 on the low refractive index layer forming side cannot be reduced.

Specifically, the second light absorption layer 22 can be composed of one or more selected from, for example, copper oxide, lower oxides of silicon, titanium, and chromium. Here, the “lower oxide” refers to an oxide having oxygen defects. Similarly to chromium oxide, silicon oxide and titanium oxide do not absorb light as long as they do not absorb oxygen defects, whereas oxides having oxygen defects have an extinction coefficient that increases due to the presence of oxygen defects. It can be used as a material constituting the light absorption layer 21. Among these, one or more uses selected from copper oxide, lower chromium oxide, and lower titanium oxide having a refractive index of 1.5 to 2.7 and an extinction coefficient of 0.5 to 0.9. However, it is preferable from the viewpoint of keeping the reflectance low. Furthermore, it is more preferable to use copper (II) oxide (CuO) from the viewpoint of the chemical stability of the film material and the stability of the production in the production process. Copper (I) (Cu ₂ O) may be produced simultaneously in the process of producing copper (II) oxide (CuO), but the refractive index is 1.5 to 2.7 and the extinction coefficient is 0. If it is 0.5 to 0.9, copper oxide (I) (Cu ₂ O) and copper oxide (II) (CuO) may be mixed and used.

  The thickness of the second light absorption layer 22 is preferably 20 nm to 140 nm, and more preferably 25 nm to 50 nm. When the thickness of the second light absorption layer 22 is less than 20 nm or exceeds 140 nm, the reflectance increases.

The low refractive index layer 23 is a layer having a refractive index of 1.7 or less. If the refractive index exceeds 1.7, the reflectance of light incident from the external space on the surface of the light shielding film 20 on the low refractive index layer forming side cannot be reduced. Specifically, the low refractive index layer 23 is selected from, for example, silicon oxide (SiO ₂ ), magnesium fluoride (MgF ₂ ), aluminum oxide (Al ₂ O ₃ ), lanthanum fluoride, sodium hexafluoride sodium, and the like. One or more types can be configured. In order to further reduce the reflectivity of light, the low refractive index layer 23 preferably has a refractive index of 1.6 or less. Specifically, the constituent material thereof is silicon oxide (SiO ₂ ), fluorine. One or more types selected from magnesium chloride (MgF ₂ ) and alumina (Al ₂ O ₃ ) are preferable, and silicon oxide (SiO ₂ ) is particularly preferable.

  The thickness of the low refractive index layer 23 is preferably 25 nm to 80 nm, and more preferably 35 nm to 65 nm. When the thickness of the low refractive index layer 23 is less than 25 nm or exceeds 80 nm, the reflectance increases.

  The light shielding film 20 configured as described above can substantially completely block transmission of light incident from both sides of the light shielding film 20 (the filter 10 side and the opposite side of the filter 10), and the low refraction of the light shielding film 20. The reflectance of light incident from the surface on the side where the refractive index layer 23 is formed, that is, the surface opposite to the filter 10, is 1.5% or less, preferably 1 in terms of the reflectance in the visible wavelength region (wavelength 400 nm to 700 nm). It can be reduced to 0.0% or less, more preferably substantially to 0%. The configuration of the light shielding film 20 is obtained from calculations and experiments using the interference of light in the multilayer film.

The light shielding film 20 can be formed, for example, as shown in FIG.
First, a photoresist 31 is applied to the entire surface of the ultraviolet / infrared light reflecting film of the filter 10 (FIG. 3A). Photoresist coating methods include spin coating, bar coating, dip coating, casting, spray coating, bead coating, wire bar coating, blade coating, roller coating, curtain coating. For example, a slit die coating method, a gravure coating method, a slit reverse coating method, a micro gravure method, or a comma coating method can be used. The application may be performed in a plurality of times. Prior to coating, the surface of the ultraviolet / infrared light reflecting film may be treated with hexamethyldisilazane (HMDS) or the like in order to improve the adhesion to the ultraviolet / infrared light reflecting film.

  Next, the photoresist 31 is irradiated with light L through the photomask 32 (FIG. 3B). When the photoresist 31 is a positive type, a photomask 32 having an opening corresponding to the light shielding film 20 is used. When the photoresist 31 is a negative type, a position corresponding to a portion where the light shielding layer 21 is not formed is used. An opened photomask 32 is used. In addition, for example, if the photoresist 31 changes its curing or solubility by light in the visible wavelength region, the light to be irradiated is irradiated with light containing at least such light in the visible wavelength region. As a result, the photoresist 31 of the portion 31a irradiated with light changes its curing or solubility.

  Next, the photoresist 31 is developed using a developer corresponding to the photoresist 31, and a resist layer 33 is formed in a portion where the light shielding film 20 is not formed on the surface of the ultraviolet / infrared light reflecting film (FIG. 3C). ).

  Next, on the resist layer 33 and the ultraviolet / infrared light reflecting film, a film that becomes the first light absorbing layer, the second light absorbing layer, and the low refractive index layer by sputtering, vacuum deposition, CVD, or the like. Are sequentially formed to form a coating film 20A (FIG. 3D).

  Then, the light shielding film 20 is formed by immersing in a resist remover such as N-methyl-2-pyrrolidone (NMP) or isopropyl alcohol to lift off the resist layer 33 (FIG. 3E). For lift-off of the resist layer 33, a physical means such as a high-pressure jet or ultrasonic vibration may be used.

  FIG. 4 is a plan view of the light absorber 100 of the present embodiment as viewed from the light shielding layer 20 side. As shown in FIG. 4, in this embodiment, the planar shape of the filter 10 is a circular shape, and the light shielding film 20 is provided in an annular shape along the outer periphery thereof. For example, the filter 10 is shown in FIG. Thus, it may be rectangular and is not particularly limited.

  Hereinafter, the transparent base material 11, the ultraviolet / infrared light reflection film 12 and the antireflection film 13 which constitute the filter 10 of the light absorber 100 of the present embodiment will be described in detail.

  The shape of the transparent substrate 11 is not particularly limited as long as it transmits light in the visible wavelength region, and examples thereof include a plate shape, a film shape, a block shape, and a lens shape. The transparent substrate 11 may be a resin containing infrared absorbing glass or an infrared absorbing agent.

  Constituent materials of the transparent substrate 11 include glass, crystal, lithium niobate, sapphire, etc., polyester resin such as polyethylene terephthalate (PET), polybutylene terephthalate (PBT), polyethylene, polypropylene, ethylene vinyl acetate copolymer And polyolefin resins such as norbornene resin, polyacrylate and polymethyl methacrylate, urethane resin, vinyl chloride resin, fluororesin, polycarbonate resin, polyvinyl butyral resin, and polyvinyl alcohol resin. These materials may have an absorption characteristic for at least one of the ultraviolet wavelength region and the infrared wavelength region.

  Glass can be appropriately selected from materials that are transparent in the visible wavelength region. For example, borosilicate glass is preferable because it is easy to process and can suppress the occurrence of scratches and foreign matters on the optical surface, and glass that does not contain an alkali component is preferable because it has good adhesion and weather resistance.

  Further, as the glass, a light absorption type glass having absorption in an infrared wavelength region in which CuO or the like is added to fluorophosphate glass or phosphate glass can also be used. In particular, fluorophosphate-based glass or phosphate-based glass to which CuO is added is excellent because it has a high transmittance for light in the visible wavelength region and CuO sufficiently absorbs light in the near-infrared wavelength region. Can provide a near-infrared cut function.

As a specific example of the fluorophosphate glass containing CuO, P ₂ O ₅ 46% to 70%, MgF ₂ 0% to 25%, CaF ₂ 0% to 25%, SrF ₂ 0% to mass%. 25%, LiF 0% to 20%, NaF 0% to 10%, KF 0% to 10%, provided that the total amount of LiF, NaF and KF is 1% to 30%, AlF ₃ 0.2% to 20% ZnO ₂ 2% to 15% (however, up to 50% of the total amount of fluoride can be replaced with oxide) 100 parts by mass of fluorophosphate glass, 0.1 parts by mass to 5 parts by mass of CuO Part, preferably 0.3 to 2 parts by mass. As a commercial item, NF-50 glass (Asahi Glass Co., Ltd. brand name) etc. are illustrated.

Specific examples of the phosphate-based glass containing CuO include, in mass%, P ₂ O ₅ 70% to 85%, Al ₂ O ₃ 8% to 17%, B ₂ O ₃ 1% to 10%, Li ₂ O 0% to 3%, Na ₂ O 0% to 5%, K ₂ O 0% to 5%, Li ₂ O + Na ₂ O + K ₂ O 0.1% to 5%, SiO ₂ 0% to 3% The thing which made CuO contain 0.1 mass part-5 mass parts with respect to 100 mass parts of phosphate-type glass, Preferably 0.3 mass part-2 mass parts is mentioned.

  Although the thickness of the transparent base material 11 is not specifically limited, From the point of aiming at size reduction and weight reduction, the range of 0.1 mm-3 mm is preferable, and the range of 0.1 mm-1 mm is more preferable.

  The ultraviolet / infrared light reflection film 12 has an effect of imparting or enhancing the near-infrared cut filter function. The ultraviolet / infrared light reflecting film 12 is formed by alternately forming a dielectric layer A and a dielectric layer B having a refractive index higher than that of the dielectric layer A by a sputtering method, a vacuum deposition method, or the like. It is composed of laminated dielectric multilayer films.

As a material constituting the dielectric layer A, a material having a refractive index of 1.6 or less, preferably 1.2 to 1.6 is used. Specifically, silica (SiO ₂ ), alumina, lanthanum fluoride, magnesium fluoride, aluminum hexafluoride sodium, or the like is used. Further, as the material constituting the dielectric layer B, a material having a refractive index of 1.7 or more, preferably 1.7 to 2.5 is used. Specifically, titania (TiO ₂ ), zirconia, tantalum pentoxide, niobium pentoxide, lanthanum oxide, yttria, zinc oxide, zinc sulfide and the like are used.

  In the present invention, the incidence angle dependency can be reduced by forming the ultraviolet / infrared light reflection film 12 with the following dielectric multilayer film.

That is, this dielectric multilayer film includes 15 unit dielectric layers each composed of a low refractive index dielectric layer A having a refractive index of 1.6 or less and a high refractive index dielectric layer B having a refractive index of 2 or more. When the optical film thickness of the dielectric layer A in the unit dielectric layer is n _L d _L and the optical film thickness of the dielectric layer B is n _H d _H , n _H d _H The number of unit dielectric layers satisfying / n _L d _L ≧ 3 is 10 or more. The unit dielectric layers satisfying n _H d _H / n _L d _L ≧ 3 may have the same or different n _H d _H / n _L d _L values.

From the viewpoint of reducing the incident angle dependency, the total number of unit dielectric layers is preferably 30 or more, and more preferably 35 or more. Further, the number of unit dielectric layers satisfying n _H d _H / n _L d _L ≧ 3 is preferably 15 or more, and more preferably 18 or more.

The average _{n H d H / n L d} L is the average value of _{n H d H / n L d} L in the entire unit dielectric layer is preferably from 4.5 to 6, in particular, all the layers of the unit dielectric layer When the number is large, for example, when the total number of unit dielectric layers is 30 or more, the average n _H d _H / n _L d _L is preferably 4.5 to 5.3.

Furthermore, in the dielectric multilayer film with reduced incidence angle dependency, the average value of the optical film thickness n _L d _L of the dielectric layer A is preferably 40 nm to 70 nm, and more preferably 40 nm to 65 nm. The average value of the optical film thickness n _H d _H of the dielectric layer B is preferably 200 nm to 310 nm, and more preferably 210 nm to 300 nm. Further, the optical film thickness n _L d _L of each dielectric layer A is preferably 10 nm to 140 nm, and the optical film thickness n _H d _H of each dielectric layer B is preferably 10 nm to 350 nm. The dielectric multilayer film can be formed by an ion beam method, an ion plating method, a CVD method, or the like in addition to the above-described sputtering method or vacuum deposition method. Since the sputtering method and the ion plating method are so-called plasma atmosphere treatments, adhesion to the near-infrared cut filter glass 11 can be improved.

  The antireflection film 13 has a function of improving the transmittance by preventing reflection of light incident on the light absorber 100 and efficiently using incident light, and can be formed by a conventionally known material and method. . Specifically, the antireflection film 3 is made of silica, titania, tantalum pentoxide, magnesium fluoride, zirconia, alumina or the like formed by sputtering, vacuum deposition, ion beam, ion plating, CVD, or the like. It is composed of one or more layers, a silicate type formed by a sol-gel method, a coating method, or the like, a silicone type, a fluorinated methacrylate type, or the like. The thickness of the antireflection film 13 is usually in the range of 100 nm to 600 nm.

  In the present invention, the main surface of the transparent substrate 11 opposite to the main surface on which the ultraviolet / infrared light reflecting film 12 is formed, instead of the antireflection film 13 or the antireflection film 13 and A second ultraviolet / infrared light reflecting film made of a dielectric multilayer film that reflects light in the ultraviolet wavelength region and the infrared wavelength region may be provided between the transparent base material 11 and the transparent base material 11.

  The dielectric multilayer film constituting the second ultraviolet / infrared light reflecting film is not particularly limited, and the same material as the dielectric multilayer film constituting the ultraviolet / infrared light reflecting film 12 is used. It can be formed by a similar method. When the ultraviolet / infrared light reflecting film 12 is composed of the above-described dielectric multilayer film with reduced incidence angle dependency, the second ultraviolet / infrared light reflecting film is as follows. It is preferable to comprise.

  That is, this dielectric multilayer film includes three unit dielectric layers each including a low refractive index dielectric layer A having a refractive index of 1.6 or less and a high refractive index dielectric layer B having a refractive index of 2 or more. More than one layer is laminated.

In addition, the dielectric multilayer film has the unit dielectric layer as a whole when the optical film thickness of the dielectric layer A in the unit dielectric layer is n _L d _L and the optical film thickness of the dielectric layer B is n _H d _{H. n H d H / n L d} L is preferably 0.8 to 1.5 average _{n H d H / n L d} L is the average value of the individual unit dielectric layer _n H _d H / _{n L} in d _L value, 0.1 to 10 is preferred.

Furthermore, the average value of the optical film thickness n _L d _L of the dielectric layer A in this dielectric multilayer film is preferably 100 nm to 230 nm, and more preferably 120 nm to 210 nm. The average value of the optical film thickness n _H d _H of the dielectric layer B is preferably 100 nm to 230 nm, and more preferably 120 nm to 210 nm. Further, the optical film thickness n _L d _L of each dielectric layer A is preferably 5 nm to 310 nm, and the optical film thickness n _H d _H of each dielectric layer B is preferably 10 nm to 300 nm.

  Further, the light shielding film 20 may be formed on the main surface of the filter 10 on the side of the antireflection film 13 like the light absorber 110 shown in FIG. 6, and further, as illustrated in FIGS. 7 and 8. The filter 10 may be formed at the interface of each layer. That is, the light absorber 120 shown in FIG. 7 is an example in which the light shielding film 20 is formed at the interface between the transparent substrate 11 and the ultraviolet / infrared light reflecting film 12 in the light absorber 100 shown in FIG. is there. A light absorber 130 shown in FIG. 8 is an example in which the light shielding film 20 is formed at the interface between the transparent base material 11 and the antireflection film 13 in the light absorber 100 shown in FIG. In these examples, similarly to the light absorber 100 shown in FIG. 1, the transmission of light incident from both sides (the filter 10 side and the opposite side of the filter 10) of the light shielding film 20 can be blocked almost completely. The reflectance of light incident from the surface opposite to the filter 10 of the light shielding film 20, that is, the surface on the side where the low refractive index layer 23 is formed, is a reflectance in the visible wavelength region (wavelength 400 nm to 700 nm). .5% or less, preferably 1.0% or less, more preferably substantially 0%. In any case, the light shielding film 20 is formed so that the first light absorption layer 21 is positioned on the transparent substrate 11 side.

(Second Embodiment)
FIG. 9 is a cross-sectional view schematically showing the configuration of the main part of the light absorber according to the second embodiment of the present invention. From this embodiment onward, in order to avoid redundant description, description of points that are common to the first embodiment will be omitted, and differences will be mainly described.

  As shown in FIG. 9, the light absorber 140 of the present embodiment is formed with a high refractive index layer 24 and a third light absorption layer 25 in this order on the main surface of the filter 10 on the ultraviolet / infrared light reflection film side. In addition, the first light absorption layer 21, the second light absorption layer 22, and the low refractive index layer 23 are formed in this order. That is, in the present embodiment, the high refractive index layer 24, the third light absorption layer 25, the first light absorption layer 21, and the second light are formed on the main surface of the filter 10 on the ultraviolet / infrared light reflection film side. A light shielding film 90 having a five-layer structure composed of the absorption layer 22 and the low refractive index layer 23 is formed.

In such a light shielding film 90, the high refractive index layer 24, together with the third light absorbing layer 25, mainly reflects the reflectance of light incident from the filter 10 side on the surface of the light shielding film 90 on the high refractive index layer forming side. Is a layer having a refractive index of more than 1.7. When the refractive index is 1.7 or less, the reflectance of light incident on the surface of the light shielding film 20 on the high refractive index layer forming side from the filter 10 side cannot be reduced. Specifically, the high refractive index layer 24 is made of, for example, chromium oxide, tantalum oxide (Ta ₂ O ₅ ), titanium oxide (TiO ₂ ), hafnium oxide (HfO ₂ ), niobium oxide (Nb ₂ O ₅ ), or oxide. Consists of one or more selected from tin (SnO), zirconium oxide (ZrO ₂ ), lanthanum oxide (La ₂ O ₃ ), yttrium oxide (Y ₂ O ₃ ), zinc oxide (ZnO), zinc sulfide (ZnO), etc. it can. In order to further reduce the reflectance of light, the high refractive index layer 24 preferably has a refractive index of 1.8 or more. Specifically, the constituent material is tantalum oxide (Ta ₂ O ₅ ). One or more selected from titanium oxide (TiO ₂ ), niobium oxide (Nb ₂ O ₅ ), and zirconium oxide (ZrO ₂ ) are preferable, and tantalum oxide (Ta ₂ O ₅ ) is particularly preferable.

  The thickness of the high refractive index layer 23 is preferably 10 nm to 50 nm, and more preferably 12 nm to 25 nm. When the thickness of the high refractive index layer 24 is less than 10 nm or exceeds 50 nm, the reflectance increases.

The third light absorption layer 25 is a layer having a refractive index of 1.4 to 3.0 and an extinction coefficient of 0.4 to 1.0. If either one of the refractive index and the extinction coefficient is out of the above range, the reflectance of light incident from the filter 10 side on the surface of the light shielding film 90 on the high refractive index layer forming side cannot be reduced. Specifically, the third light absorption layer 25 can be composed of one or more selected from, for example, copper oxide, lower oxides of silicon, titanium, and chromium. Here, the “lower oxide” refers to an oxide having oxygen defects. Similarly to chromium oxide, silicon oxide and titanium oxide do not absorb light as long as they do not absorb oxygen defects, whereas oxides having oxygen defects have an extinction coefficient that increases due to the presence of oxygen defects. It can be used as a material constituting the light absorption layer 21. Among these, one or more uses selected from copper oxide, lower chromium oxide, and lower titanium oxide having a refractive index of 1.5 to 2.7 and an extinction coefficient of 0.5 to 0.9. However, it is preferable from the viewpoint of keeping the reflectance low. Furthermore, it is more preferable to use copper (II) oxide (CuO) from the viewpoint of the chemical stability of the film material and the stability of the production in the production process. Although copper oxide (I) (Cu ₂ O) may be generated at the same time in the process of producing copper oxide (II) (CuO), the refractive index is 1.5 to 2.7 and the extinction coefficient is 0. If it is 0.5 to 0.9, copper oxide (I) (Cu ₂ O) and copper oxide (II) (CuO) may be mixed and used.

  The thickness of the third light absorption layer 25 is preferably 20 nm to 140 nm, and more preferably 25 nm to 50 nm. When the thickness of the third light absorption layer 22 is less than 20 nm or exceeds 140 nm, the reflectance increases.

  The first light absorption layer 21, the second light absorption layer 22, and the low refractive index layer 23 are the same as those described in the first embodiment, and the first light absorption layer 21 is mainly composed of the light shielding film 90. The second light absorbing layer 22 is incident on the surface of the light shielding film 90 on the side of the low refractive index layer formation side from an external space, together with the low refractive index layer 23. It has the effect | action which reduces the reflectance of light.

  The light shielding film 90 configured in this way can substantially completely block the transmission of light incident from both sides of the light shielding film 90 (the filter 10 side and the opposite side of the filter 10), and the low refraction of the light shielding film 90. The reflectance of light incident from the surface on the side where the refractive index layer 23 is formed, that is, the surface opposite to the filter 10, is 1.5% or less, preferably 1.0% or less, in terms of reflectance in the visible wavelength region. Preferably, it can be reduced to substantially 0%, and the reflectance of light incident from the surface on the high refractive index layer 24 forming side of the light shielding film 90, that is, the surface on the filter 10 side, is reflected in the visible wavelength region. The ratio can be reduced to 1.5% or less, preferably 1.0% or less, more preferably substantially 0%. The configuration of the light shielding film 90 is also obtained from calculations and experiments using the interference of light in the multilayer film.

  In the formation of the light shielding film 90, a sputtering method or the like is performed on the resist layer 33 and the ultraviolet / infrared light reflecting film in the film forming step (FIG. 3D) in the method described in the first embodiment. The high refractive index layer 24, the third light absorption layer 25, the first light absorption layer 21, the second light absorption layer 22, and the low refractive index layer 23 are sequentially formed by vacuum deposition, CVD, or the like. The film can be formed in the same procedure except that the film is formed.

  Although not shown, in this embodiment as well, as in the first embodiment, the light shielding film 90 may be formed on the main surface of the filter 10 on the antireflection film 13 side. It may be formed at the interface of each layer. In any case, the light shielding film 90 is formed so that the high refractive index layer 24 is positioned on the transparent substrate 11 side of the filter 10.

(Third embodiment)
FIG. 10 is a cross-sectional view schematically showing a light absorber 150 according to the third embodiment of the present invention.
As shown in FIG. 10, the light absorber 150 of the present embodiment is provided with an infrared light absorbing film 15 between the transparent substrate 11 and the antireflection film 13 of the filter 10. The infrared light absorbing film 15 may be provided between the transparent substrate 11 and the ultraviolet / infrared light reflecting film 12.

  The infrared light absorption film 15 is made of a transparent resin containing an infrared absorber that absorbs light in the infrared wavelength region.

  The transparent resin only needs to transmit light in the visible wavelength region. For example, acrylic resin, styrene resin, ABS resin, AS resin, polycarbonate resin, polyolefin resin, polyvinyl chloride resin, acetate resin, cellulose resin Polyester resin, allyl ester resin, polyimide resin, polyamide resin, polyimide ether resin, polyamideimide resin, epoxy resin, urethane resin, urea resin, and the like.

Infrared absorbers that absorb light in the infrared wavelength region include inorganic fine particles such as ITO (In ₂ O ₃ —TiO ₂ ), ATO (ZnO—TiO ₂ ), lanthanum boride, and cyanine compounds. Organic dyes such as phthalocyanine compounds, naphthalocyanine compounds, dithiol metal complex compounds, diimonium compounds, polymethine compounds, phthalide compounds, naphthoquinone compounds, anthraquinone compounds, and indophenol compounds.

In addition, the inorganic fine particles are composed of oxide crystallites containing at least Cu and / or P, and have a number average aggregate particle diameter of 5 nm to 200 nm, preferably a crystal of a compound represented by the following formula (1) Those having a number average aggregate particle diameter of 5 nm to 200 nm can be used.
A _{1 / n} CuPO ₄ (1)
(In the formula, A is at least one selected from the group consisting of alkali metals (Li, Na, K, Rb, Cs), alkaline earth metals (Mg, Ca, Sr, Ba) and NH ₄ , and subscripts. N is 1 when A is an alkali metal or NH ₄ and is 2 when A is an alkaline earth metal.)

  Those composed of crystallites can maintain the infrared absorption characteristics due to the crystal structure, and since the crystallites are fine particles, they can be contained in the infrared light absorption film 15 at a high concentration, and per unit length. It is preferable because the absorption capacity can be increased.

  The inorganic fine particles may be subjected to a surface treatment by a known method for the purpose of improving the weather resistance, acid resistance, water resistance and the like and improving the compatibility with the binder resin by surface modification.

  Further, as an organic dye, a dye having a pattern as shown in FIG. 11 having an absorption spectrum of light in a wavelength region of 400 nm to 1000 nm measured by dissolving in acetone, that is, in the absorption spectrum, the peak wavelength is 695 ± 1 nm. A dye having a maximum absorption peak with a full width at half maximum of 35 ± 5 nm can be used. Such a dye is preferable because the absorbance changes sharply between wavelengths of 630 nm to 700 nm required for the near infrared cut filter. In addition, when using this pigment | dye, use of transparent resin whose refractive index in wavelength 589nm is 1.54 or more is preferable as transparent resin.

  An infrared absorber may be used individually by 1 type, and 2 or more types may be mixed and used for it.

  The content of the infrared absorbent in the infrared light absorbing film 15 is preferably 20% by mass to 60% by mass, for example, in the case of inorganic fine particles made of oxide crystallites containing at least Cu and / or P described above, More preferably, 50% by mass. In the case of a dye having a maximum absorption peak with a peak wavelength of 695 ± 1 nm and a full width at half maximum of 35 ± 5 nm, 0.5% by mass to 3% by mass is preferable, and 0.5% by mass to 0.8% is preferable. The mass% is more preferable. If the content of each infrared absorber is less than the above range, light in the infrared wavelength region may not be sufficiently absorbed, and if it exceeds the above range, the light transmittance in the visible wavelength region may be reduced. .

  In addition to the infrared absorber, the transparent resin further includes a color tone correction dye, a leveling agent, an antistatic agent, a heat stabilizer, an antioxidant, a dispersant, a flame retardant, and a lubricant as long as the effects of the present invention are not impaired. Further, a plasticizer or the like may be contained.

  The infrared light absorption film 15 is prepared by, for example, preparing a coating liquid by dispersing or dissolving a transparent resin, an infrared absorber, and other additives blended as necessary in a dispersion medium or solvent. It can be formed by applying the working liquid to the main surface of the transparent substrate 11 opposite to the surface on which the ultraviolet / infrared light reflecting film 12 is formed and drying. Coating and drying can be carried out in multiple steps. Moreover, in that case, you may prepare several coating liquid from which a content component differs, and apply and dry these in order. Specifically, for example, a coating liquid containing inorganic fine particles composed of oxide crystallites containing at least Cu and / or P described above and a coating liquid containing ITO particles are individually prepared, and these are sequentially prepared. It may be applied and dried.

  Examples of the dispersion medium or solvent include water, alcohol, ketone, ether, ester, aldehyde, amine, aliphatic hydrocarbon, alicyclic hydrocarbon, and aromatic hydrocarbon. These may be used alone or in combination of two or more. A dispersing agent can be mix | blended with a coating liquid as needed. As the dispersant, for example, a surfactant, a silane compound, a silicone resin, a titanate coupling agent, an aluminum coupling agent, a zircoaluminate coupling agent, or the like is used.

  For the preparation of the coating solution, a stirring device such as a rotation / revolution mixer, a bead mill, a planetary mill, or an ultrasonic homogenizer can be used. In order to ensure high transparency, it is preferable to sufficiently stir. Stirring may be performed continuously or intermittently.

  For coating of coating liquid, spin coating method, bar coating method, dip coating method, casting method, spray coating method, bead coating method, wire bar coating method, blade coating method, roller coating method, curtain coating method A slit die coating method, a gravure coating method, a slit reverse coating method, a micro gravure method, a comma coating method and the like can be used.

  The thickness of the infrared light absorbing film 15 is preferably in the range of 0.01 to 200 μm, and more preferably in the range of 0.1 to 50 μm. If the thickness is less than 0.01 μm, the predetermined absorption ability may not be obtained. If the thickness exceeds 200 μm, drying unevenness may occur during drying.

  Since the light absorber 150 of the present embodiment includes the infrared light absorbing film 15, it can have a good near infrared cut function.

  In the present embodiment as well, as in the first embodiment, the light shielding film 20 may be formed on the main surface of the filter 10 on the antireflection film 13 side like the light absorber 160 shown in FIG. Alternatively, as illustrated in FIGS. 13 to 15, the filter 10 may be formed at the interface of each layer. That is, the light absorber 170 shown in FIG. 13 is an example in which the light shielding film 20 is formed at the interface between the transparent substrate 11 and the ultraviolet / infrared light reflecting film 12 in the light absorber 150 shown in FIG. is there. 14 is an example in which the light shielding film 20 is formed at the interface between the transparent substrate 11 and the infrared light absorbing film 15 in the light absorber 150 shown in FIG. Further, the light absorber 190 shown in FIG. 15 is an example in which the light shielding film 20 is formed at the interface between the infrared light absorption film 15 and the antireflection film 13 in the light absorber 150 shown in FIG.

  In these examples, similarly to the light absorber 100 shown in FIG. 1, the transmission of light incident from both sides (the filter 10 side and the opposite side of the filter 10) of the light shielding film 20 can be blocked almost completely. The reflectance of light incident from the surface of the light shielding film 20 opposite to the filter 10, that is, the surface on the low refractive index layer 23 forming side, is 1.5% or less in terms of reflectance in the visible wavelength region, preferably Can be reduced to 1.0% or less, more preferably to substantially 0%. In any case, the light shielding film 20 is formed so that the first light absorption layer 21 is located on the transparent substrate 11 side.

  Further, although not shown, a light shielding film having a five-layer structure as shown in the second embodiment may be provided instead of the light shielding film 20. In this case, the reflectance of light incident from the surface on the high refractive index layer forming side of the light shielding film having a five-layer structure, that is, the surface on the filter side, also enters from the surface on the low refractive index layer forming side. It can be reduced similarly to the light reflectance.

(Fourth embodiment)
FIG. 16 is a cross-sectional view schematically showing an imaging apparatus 200 according to the fourth embodiment.

  As illustrated in FIG. 16, the imaging apparatus 200 according to the present embodiment includes a solid-state imaging device 201, an optical filter 202, a lens 203, and a housing 204 that holds and fixes them.

  The solid-state image sensor 201, the optical filter 202, and the lens 203 are disposed along the optical axis x, and the optical filter 202 is disposed between the solid-state image sensor 201 and the lens 203. The solid-state imaging device 201 is an electronic component that converts light incident through the lens 203 and the optical filter 202 into an electrical signal, and is, for example, a CCD or a CMOS. In this embodiment, the light absorber 100 shown in FIG. 1 is used as the optical filter 202, the ultraviolet / infrared light reflection film 12 is on the lens 203 side, and the antireflection film 13 is on the solid-state image sensor 201 side. It is arranged to be located in. The light absorber 100 may be disposed such that the ultraviolet / infrared light reflection film 12 is positioned on the solid-state imaging device 201 side and the antireflection film 13 is positioned on the lens 203 side. In this embodiment, the light absorber 100 shown in FIG. 1 is used as the optical filter 202, but the light absorbers 120, 130, and 140 shown in FIGS. 6 to 10, FIGS. , 150, 160, 170, 180, 190, etc. can be used.

  In the imaging apparatus 200, light incident from the subject side enters the solid-state imaging element 201 through the lens 203 and the optical filter 202 (light absorber 100). The solid-state image sensor 201 converts this incident light into an electrical signal and outputs it as an image signal. Incident light is adjusted to an appropriate amount of light by passing through the light absorber 100 provided with the light-shielding film 20, and reflected or scattered from an optical member such as a lens or a sensor in the imaging device 200 or its holding member. Is received by the solid-state image sensor 201 as light in which near infrared rays are sufficiently shielded.

  Note that the imaging apparatus 200 of the present embodiment has only one lens, but it may have a plurality of lenses, and a cover glass or the like that protects the solid-state imaging device is arranged. It may be. Furthermore, the position of the optical filter is not limited to between the lens and the solid-state imaging device, and may be disposed on the subject side of the lens, for example. Also, when a plurality of lenses are disposed, between the lenses. May be arranged.

  In addition, the embodiments described above are examples in which the light absorber has a near-infrared cut function, but is not limited to the near-infrared cut function, but has functions such as a low-pass filter, an ND filter, and a color tone filter. May be.

  Furthermore, for example, as shown in FIG. 17, it may not have such a filter function. That is, the light absorber shown in FIG. 17 is an example in which the light-shielding film 20 is formed on the substrate 30 having no filter function. The material of the substrate 30 is not particularly limited, and various types of glass, ceramics, metals, plastics, and the like can be given.

  Although several embodiments of the present invention and modifications thereof have been described above, the present invention is not limited to the description of the embodiments described above, and is within a scope not departing from the gist of the present invention. Needless to say, it can be changed as appropriate.

  EXAMPLES Next, although an Example demonstrates this invention still in detail, this invention is not limited to these Examples at all. In addition, the spectral transmittance curve and the spectral reflectance curve of the light absorber in the examples were measured using a spectrophotometer (MCPD-3000 manufactured by Otsuka Electronics Co., Ltd.).

Example 1
A white plate glass B270 (trade name, manufactured by Schott) having a square plate shape of 40 mm × 40 mm × 0.3 mm is used as a base, and a chromium (Cr; extinction coefficient 3.33) film is formed on one surface thereof by sputtering. A copper (CuO; refractive index 2.58, extinction coefficient 0.59) film and a silicon oxide (SiO ₂ ; refractive index 1.47) film are sequentially laminated to form a light shielding film having a structure as shown in Table 1. (Three layers) was formed to produce a light absorber.

  The spectral transmittance curve and spectral reflectance curve of the obtained light absorber are shown in FIG. The spectral transmittance curve and the spectral reflectance curve were measured for light incident at an incident angle of 0 ° from above the uppermost silicon oxide film toward the silicon oxide film.

  As is clear from FIG. 18, the light absorber obtained in this example has a transmittance of approximately 0% and a reflectance of 0.3% or less, and can absorb light in the visible wavelength region from the silicon oxide film side. On the other hand, it had good light-shielding properties and low reflectivity.

(Example 2)
A white plate glass B270 having a square plate shape of 40 mm × 40 mm × 0.3 mm is used as a base, and a tantalum oxide (Ta ₂ O ₅ ; refractive index 2.23) film, copper oxide (CuO; Refractive index 2.58, extinction coefficient 0.59) film, chromium (Cr; extinction coefficient 3.33) film, copper oxide (CuO; refractive index 2.58, extinction coefficient 0.59) film, and oxidation Silicon (SiO ₂ ; refractive index 1.47) films were sequentially laminated to form a light-shielding film (5 layers) having a structure as shown in Table 2 to produce a light absorber.

  The spectral transmittance curve and spectral reflectance curve of the obtained light absorber are shown in FIGS. 19 and 20. In addition, the measurement of the spectral transmittance curve and the spectral reflectance curve shown in FIG. 19 was measured with respect to light incident at an incident angle of 0 ° from above the uppermost silicon oxide film toward the silicon oxide film. is there. Further, the measurement of the spectral transmittance curve and the spectral reflectance curve shown in FIG. 20 is measured for light incident at an incident angle of 0 ° from the substrate side toward the first tantalum oxide film. In the latter measurement, in order to eliminate the influence of the reflected light on the back surface of the substrate, an eight-layer antireflection film having the structure shown in Table 3 was formed on the back surface of the substrate. Each layer of the antireflection film was formed by vapor deposition.

  As is clear from FIGS. 19 and 20, the light absorber obtained in this example is effective for both the visible wavelength region light from the silicon oxide film side and the visible wavelength region light from the substrate side. However, the transmittance was approximately 0%, and the film had good light shielding properties. Similarly, the reflectance was also very small for light in the visible wavelength region from the silicon oxide film side and for light in the visible wavelength region from the substrate side, and had good low reflectivity. .

(Reference Example 1)
A white plate glass B270 having a square plate shape of 40 mm × 40 mm × 0.3 mm is used as a base, and a chromium (Cr) film, chromium oxide (CrO _x ; 2.11, extinction coefficient 0. 12) A film, a chromium (Cr) film, a chromium oxide (CrO _x ; refractive index 2.11, extinction coefficient 0.12) film, and a silicon oxide (SiO ₂ ) film are sequentially laminated, as shown in Table 4. A light-shielding film (5 layers) having a different structure was formed to produce a light absorber.
The spectral transmittance curve and spectral reflectance curve of the obtained light absorber are shown in FIG. The spectral transmittance curve and the spectral reflectance curve were measured for light incident at an incident angle of 0 ° from above the uppermost silicon oxide film toward the silicon oxide film.

  As is clear from FIG. 21, the light absorber obtained in this reference example had a transmittance of approximately 0%, but the effect of reducing the reflectance was smaller than that of the example.

(Reference Example 2)
A white plate glass B270 having a square plate shape of 40 mm × 40 mm × 0.3 mm is used as a base, and a silicon oxide (SiO ₂ ; refractive index 1.47) film, chromium oxide (CrO _x ; 2) is formed on one surface by sputtering. .11, extinction coefficient 0.12) film, chromium (Cr) film, chromium oxide (CrO _x ; refractive index 2.11, extinction coefficient 0.12) film, chromium (Cr) film, chromium (Cr) film Chromium oxide (CrO _x ; refractive index 2.11, extinction coefficient 0.12) film, chromium (Cr) film, chromium oxide (CrO _x ; refractive index 2.11, extinction coefficient 0.12) film, and A silicon oxide (SiO ₂ ; refractive index 1.47) film was laminated in order to form a light-shielding film (9 layers) having the structure shown in Table 5 to produce a light absorber.

  The spectral transmittance curve and spectral reflectance curve of the obtained light absorber are shown in FIG. 22 and FIG. Note that the spectral transmittance curve and the spectral reflectance curve shown in FIG. 22 were measured for light incident at an incident angle of 0 ° from above the uppermost silicon oxide film toward the silicon oxide film. is there. Moreover, the measurement of the spectral transmittance curve and the spectral reflectance curve shown in FIG. 23 is measured with respect to light incident at an incident angle of 0 ° from the substrate side toward the first silicon oxide film. In the latter measurement, in order to eliminate the influence of the reflected light on the back surface of the substrate, an 8-layer antireflection film having the structure shown in Table 3 was formed on the back surface of the substrate, as in Example 2.

  As is apparent from FIGS. 22 and 23, the light absorber obtained in this reference example is not only for light in the visible wavelength region from the silicon oxide film side but also for light in the visible wavelength region from the substrate side. However, although the transmittance was approximately 0% and had good light-shielding properties, the effect of reducing the reflectance was small compared to the examples.

  Since the light absorber of the present invention has a light shielding property and a light shielding film having a low light reflectance, information devices such as a digital still camera, a digital video camera, a mobile phone, a notebook personal computer, and a PDA are used. It is useful for an imaging apparatus such as a small camera incorporated in the camera. In addition, it can be widely used in various optical devices such as a microscope, an endoscope, various optical communication devices, various image display devices, and a laser printer.

  DESCRIPTION OF SYMBOLS 10 ... (Near-infrared cut) filter, 11 ... Transparent base material, 12 ... Ultraviolet / infrared light reflection film, 13 ... Antireflection film, 15 ... Infrared light absorption film, 20, 90 ... Light-shielding film, 21 ... 1st 22 ... second light absorption layer, 23 ... low refractive index layer, 24 ... high refractive index layer, 25 ... third light absorption layer, 30 ... substrate, 100, 110, 120, 130, 140 , 150, 160, 170, 180, 190 ... light absorber, 200 ... imaging device, 201 ... solid-state imaging device, 202 ... optical filter.

Claims (20)

A substrate;
A light shielding film that blocks light incident on the substrate,
The light-shielding film has a three-layer structure including a first light absorption layer, a second light absorption layer, and a low refractive index layer in this order,
The first light absorption layer has a transmittance of 5% or less,
The second light absorption layer includes one or more selected from copper oxide and lower oxides of silicon, titanium, and chromium,
The low refractive index layer has a refractive index lower than that of the second light absorption layer.   The light absorber according to claim 1, wherein the first light absorption layer has a larger extinction coefficient than the second light absorption layer.   The light absorber according to claim 1 or 2, wherein the first light absorption layer has an extinction coefficient of 2.5 or more.   The light absorber according to any one of claims 1 to 3, wherein the second light absorption layer has a refractive index of 1.4 to 3.0.   The light absorber according to any one of claims 1 to 4, wherein a reflectance in a visible wavelength region of light incident from the low refractive index layer side of the light shielding film is 1.5% or less.   The light absorber according to any one of claims 1 to 5, wherein the first light absorption layer includes one or more selected from chromium, molybdenum, tungsten, iron, nickel, titanium, and lower chromium oxide.   The thickness of the said 1st light absorption layer is 40 nm-200 nm, The light absorber of any one of Claims 1-6. The thickness of the second light-absorbing layer, the light-absorbing body according to any one of claims 1 to 7 is 20Nm～140nm. The light absorber according to any one of claims 1 to 8, wherein the low refractive index layer includes at least one selected from silicon oxide, aluminum oxide, magnesium fluoride, lanthanum fluoride, and sodium hexafluoride sodium. . The thickness of the low refractive index layer, the light-absorbing body according to any one of claims 1-9 is 25Nm～80nm. The substrate, the light-absorbing body according to claim 1-10 any one constituting at least a part of the optical filter having a near infrared cut function. The light absorber according to any one of claims 1 to 11 , wherein the substrate includes an infrared absorbing glass that absorbs light in an infrared wavelength region. The substrate is infrared light absorber according to 1, wherein any one of claims 1 to 12 comprising an infrared light absorbing film containing an infrared absorbing agent that absorbs light in the wavelength region. The light shielding film, the light-absorbing body according to any one of claims 1 to 13 provided in the surface of the substrate. The substrate has a transparent substrate and an ultraviolet / infrared light reflecting film made of a dielectric multilayer film,
The light shielding film, the transparent substrate and the ultraviolet and infrared light reflecting film and the light-absorbing body according to claim 1 to 13 any one provided in the interface. The substrate has a transparent substrate and an antireflection film,
The light absorber according to any one of claims 1 to 13 , wherein the light shielding film is provided at an interface between the transparent base material and the antireflection film. The substrate has a transparent substrate;
The light absorber according to claim 13 , wherein the light shielding film is provided at an interface between the transparent substrate and the infrared light absorbing film. The base has an antireflection film,
The light absorber according to claim 13 , wherein the light shielding film is provided at an interface between the antireflection film and the infrared light absorbing film. The substrate, the light-absorbing body according to any one of claims 14, 16-18 with ultraviolet and infrared light reflection film further comprising a dielectric multilayer film. An image sensor that receives light from a subject or a light source;
The light absorber according to any one of claims 1 to 19 , disposed between the subject or the light source and the imaging device,
An imaging apparatus comprising:

Images