JP6455847B2 - 半導体デバイス電極用のシリサイド合金膜及びシリサイド合金膜の製造方法 - Google Patents
半導体デバイス電極用のシリサイド合金膜及びシリサイド合金膜の製造方法 Download PDFInfo
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- JP6455847B2 JP6455847B2 JP2017524988A JP2017524988A JP6455847B2 JP 6455847 B2 JP6455847 B2 JP 6455847B2 JP 2017524988 A JP2017524988 A JP 2017524988A JP 2017524988 A JP2017524988 A JP 2017524988A JP 6455847 B2 JP6455847 B2 JP 6455847B2
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- silicide
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- thin film
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- 229910021332 silicide Inorganic materials 0.000 title claims description 144
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 title claims description 138
- 229910045601 alloy Inorganic materials 0.000 title claims description 116
- 239000000956 alloy Substances 0.000 title claims description 116
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000004065 semiconductor Substances 0.000 title description 13
- 239000010408 film Substances 0.000 claims description 102
- 229910052751 metal Inorganic materials 0.000 claims description 102
- 239000002184 metal Substances 0.000 claims description 102
- 239000010409 thin film Substances 0.000 claims description 63
- 239000000758 substrate Substances 0.000 claims description 28
- 239000013078 crystal Substances 0.000 claims description 24
- 238000002441 X-ray diffraction Methods 0.000 claims description 17
- 229910052735 hafnium Inorganic materials 0.000 claims description 8
- 229910052697 platinum Inorganic materials 0.000 claims description 8
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 5
- 229910052741 iridium Inorganic materials 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 229910052689 Holmium Inorganic materials 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 26
- 230000000052 comparative effect Effects 0.000 description 25
- 238000004544 sputter deposition Methods 0.000 description 24
- 239000010410 layer Substances 0.000 description 19
- 230000004888 barrier function Effects 0.000 description 15
- 238000010438 heat treatment Methods 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 14
- 238000000034 method Methods 0.000 description 14
- 239000000203 mixture Substances 0.000 description 13
- 238000012545 processing Methods 0.000 description 11
- 239000000843 powder Substances 0.000 description 10
- 238000002844 melting Methods 0.000 description 9
- 230000008018 melting Effects 0.000 description 9
- 238000004458 analytical method Methods 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 150000002739 metals Chemical class 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 229910021334 nickel silicide Inorganic materials 0.000 description 4
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000005275 alloying Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000000691 measurement method Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910005881 NiSi 2 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003698 laser cutting Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000004663 powder metallurgy Methods 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 239000006104 solid solution Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910019001 CoSi Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- -1 HfN Chemical compound 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000005097 cold rolling Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
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- H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
- H01L21/28052—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer
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Description
第1実施形態:本実施形態では、金属M1としてPtを金属M2としてHfを適用する、PtHfシリサイド(PtxHfySi)合金膜を製造した。ここでは、Si基板にPtHfシリサイド薄膜を形成してショットキーダイオードを製造し、このデバイスの電気特性を評価した。
Claims (7)
- Siを含む基板上に形成されるシリサイド合金膜において、
仕事関数が4.6eV以上5.7eV以下の金属M1と、仕事関数が2.5eV以上4.0eV以下の金属M2と、Siとからなり、
4.3eV以上4.9eV以下の仕事関数を有すると共に、
X線回折分析により観察される、金属M1と金属M2とSiとからなる混晶体(M1 x M2 y Si)の回折ピークのピーク強度(X)と、金属M1のシリサイド(M1 a Si)の回折ピークのピーク強度(Y)と、金属M2のシリサイド(M2 b Si)の回折ピークのピーク強度(Z)と、の関係について、Xに対する、YとZとの和の比率((Y+Z)/X)が0.1以下であることを特徴とするシリサイド合金膜。 - 金属M1は、Pt、Pd、Mo、Ir、W、又はRuの少なくともいずれかである請求項1記載のシリサイド合金膜。
- 金属M2は、Hf、La、Er、Ho、Yb、Eu、Pr、又はSmの少なくともいずれかである請求項1又は請求項2記載のシリサイド合金膜。
- Si含有量が33at%以上50at%以下である請求項1〜請求項3のいずれかに記載のシリサイド合金膜。
- 不純物であるC、Oの濃度が合計で5質量%以下である請求項1〜請求項4のいずれかに記載のシリサイド合金膜。
- 自乗平均表面粗さ(RMS)が5nm以下である請求項1〜請求項5のいずれかに記載のシリサイド合金膜。
- 請求項1〜請求項6のいずれかに記載のシリサイド合金膜の製造方法であって、
Si基板の上に金属M1と金属M2とからなる薄膜を形成した後、
前記Si基板を熱処理して金属M1及び金属M2をシリサイド化するシリサイド合金膜の製造方法。
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