JP6453756B2 - イオンビーム処理装置 - Google Patents
イオンビーム処理装置 Download PDFInfo
- Publication number
- JP6453756B2 JP6453756B2 JP2015539715A JP2015539715A JP6453756B2 JP 6453756 B2 JP6453756 B2 JP 6453756B2 JP 2015539715 A JP2015539715 A JP 2015539715A JP 2015539715 A JP2015539715 A JP 2015539715A JP 6453756 B2 JP6453756 B2 JP 6453756B2
- Authority
- JP
- Japan
- Prior art keywords
- ion beam
- scanning assembly
- voltage
- electrodes
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000010884 ion-beam technique Methods 0.000 title claims description 231
- 238000012545 processing Methods 0.000 title description 14
- 230000005684 electric field Effects 0.000 claims description 17
- 230000005405 multipole Effects 0.000 claims description 8
- 238000000926 separation method Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 60
- 150000002500 ions Chemical class 0.000 description 49
- 238000005468 ion implantation Methods 0.000 description 24
- 238000000034 method Methods 0.000 description 8
- 230000010355 oscillation Effects 0.000 description 6
- 230000008901 benefit Effects 0.000 description 3
- 230000005686 electrostatic field Effects 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/10—Lenses
- H01J37/12—Lenses electrostatic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
- H01J37/1472—Deflecting along given lines
- H01J37/1474—Scanning means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/10—Lenses
- H01J2237/12—Lenses electrostatic
- H01J2237/121—Lenses electrostatic characterised by shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/15—Means for deflecting or directing discharge
- H01J2237/151—Electrostatic means
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electron Sources, Ion Sources (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/658,990 US9165744B2 (en) | 2012-10-24 | 2012-10-24 | Apparatus for treating ion beam |
| US13/658,990 | 2012-10-24 | ||
| PCT/US2013/066160 WO2014066375A1 (en) | 2012-10-24 | 2013-10-22 | Apparatus for treating ion beam |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016502733A JP2016502733A (ja) | 2016-01-28 |
| JP2016502733A5 JP2016502733A5 (enExample) | 2016-10-06 |
| JP6453756B2 true JP6453756B2 (ja) | 2019-01-16 |
Family
ID=49519127
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015539715A Active JP6453756B2 (ja) | 2012-10-24 | 2013-10-22 | イオンビーム処理装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9165744B2 (enExample) |
| JP (1) | JP6453756B2 (enExample) |
| KR (1) | KR102039920B1 (enExample) |
| CN (1) | CN104823263B (enExample) |
| TW (1) | TWI597760B (enExample) |
| WO (1) | WO2014066375A1 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106717130A (zh) * | 2014-09-12 | 2017-05-24 | 三菱电机株式会社 | 射束输送系统及粒子射线治疗装置 |
| CN107004453B (zh) * | 2014-12-04 | 2019-07-19 | 株式会社东芝 | 粒子线束调整装置以及方法、粒子线治疗装置 |
| US9679745B2 (en) * | 2015-10-14 | 2017-06-13 | Varian Semiconductor Equipment Associates, Inc. | Controlling an ion beam in a wide beam current operation range |
| CN113380598A (zh) * | 2020-03-09 | 2021-09-10 | 北京烁科中科信电子装备有限公司 | 一种离子注入机电扫描图形识别注入方法 |
| US11217427B1 (en) * | 2020-11-27 | 2022-01-04 | Applied Materials, Inc. | System, apparatus and method for bunched ribbon ion beam |
| CN113140436A (zh) * | 2021-04-22 | 2021-07-20 | 大连交通大学 | 扫描式氩离子源 |
| CN115376874B (zh) * | 2022-08-23 | 2024-10-18 | 浙江陶特容器科技股份有限公司 | 一种基于离子注入机的离子束注入控制方法及装置 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5769653A (en) * | 1980-10-20 | 1982-04-28 | Fujitsu Ltd | Charged particle beam device |
| JP2881649B2 (ja) * | 1989-03-22 | 1999-04-12 | 日本真空技術株式会社 | イオン注入装置 |
| JP3859437B2 (ja) * | 2000-08-04 | 2006-12-20 | 株式会社東芝 | 荷電ビーム露光装置 |
| JP4032111B2 (ja) | 2001-07-19 | 2008-01-16 | 独立行政法人産業技術総合研究所 | 荷電粒子ビーム装置 |
| GB0408751D0 (en) * | 2004-04-20 | 2004-05-26 | Micromass Ltd | Mass spectrometer |
| JP5085887B2 (ja) * | 2006-05-30 | 2012-11-28 | 株式会社Ｓｅｎ | ビーム処理装置及びビーム処理方法 |
| JP5329050B2 (ja) | 2007-04-20 | 2013-10-30 | 株式会社Ｓｅｎ | ビーム処理装置 |
-
2012
- 2012-10-24 US US13/658,990 patent/US9165744B2/en active Active
-
2013
- 2013-10-08 TW TW102136402A patent/TWI597760B/zh active
- 2013-10-22 CN CN201380061200.1A patent/CN104823263B/zh active Active
- 2013-10-22 JP JP2015539715A patent/JP6453756B2/ja active Active
- 2013-10-22 WO PCT/US2013/066160 patent/WO2014066375A1/en not_active Ceased
- 2013-10-22 KR KR1020157013442A patent/KR102039920B1/ko active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TW201421529A (zh) | 2014-06-01 |
| WO2014066375A1 (en) | 2014-05-01 |
| KR102039920B1 (ko) | 2019-11-04 |
| JP2016502733A (ja) | 2016-01-28 |
| US9165744B2 (en) | 2015-10-20 |
| CN104823263B (zh) | 2017-05-24 |
| US20140110596A1 (en) | 2014-04-24 |
| KR20150074139A (ko) | 2015-07-01 |
| TWI597760B (zh) | 2017-09-01 |
| CN104823263A (zh) | 2015-08-05 |
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