JPS5769653A - Charged particle beam device - Google Patents

Charged particle beam device

Info

Publication number
JPS5769653A
JPS5769653A JP14655680A JP14655680A JPS5769653A JP S5769653 A JPS5769653 A JP S5769653A JP 14655680 A JP14655680 A JP 14655680A JP 14655680 A JP14655680 A JP 14655680A JP S5769653 A JPS5769653 A JP S5769653A
Authority
JP
Japan
Prior art keywords
electrode
central axis
deflection
focusing
applying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14655680A
Other languages
Japanese (ja)
Inventor
Hideo Matsumoto
Norishige Hisatsugu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14655680A priority Critical patent/JPS5769653A/en
Publication of JPS5769653A publication Critical patent/JPS5769653A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/12—Lenses electrostatic

Abstract

PURPOSE:To perform the focusing and the deflection in same space by arranging more than predetermined even number of electrode chips in rotary symmetrical against the central axis to construct the electrode of an electrostatic lens while overlapping the focusing and the deflection voltages on each electrode chip. CONSTITUTION:At least one of the electrodes 14, 15 of an electrostatic lens comprised of a plurality of tubular electrostatic lens electrodes 14, 15 is constucted such that the electrodes chips 11-1-11-16 are arranged on an insulative tube 13 in rotary symmetrical against the central axis (L). Here the number of the electrode chips is 2n (n ). When applying the same voltage on each electrode, symmetrical focus voltage against the central axis (L) is produced. While when applying the cosine distribution voltage on each electrode chip, a parallel field vertical against the central axis (L) is produced to apply the focus and deflection voltages and applying on each electrode, the focusing and the deflection and be performed in the same space resulting in the production of micro beam spot having low astigmatism.
JP14655680A 1980-10-20 1980-10-20 Charged particle beam device Pending JPS5769653A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14655680A JPS5769653A (en) 1980-10-20 1980-10-20 Charged particle beam device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14655680A JPS5769653A (en) 1980-10-20 1980-10-20 Charged particle beam device

Publications (1)

Publication Number Publication Date
JPS5769653A true JPS5769653A (en) 1982-04-28

Family

ID=15410332

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14655680A Pending JPS5769653A (en) 1980-10-20 1980-10-20 Charged particle beam device

Country Status (1)

Country Link
JP (1) JPS5769653A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6044951A (en) * 1983-07-28 1985-03-11 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Charged particle beam device
JPS61142646A (en) * 1984-12-14 1986-06-30 Nippon Telegr & Teleph Corp <Ntt> Focusing and deflecting device for charged particle beam
US4725736A (en) * 1986-08-11 1988-02-16 Electron Beam Memories Electrostatic electron gun with integrated electron beam deflection and/or stigmating system
AT393333B (en) * 1986-11-27 1991-09-25 Ims Ionen Mikrofab Syst ION PROJECTION DEVICE FOR SHADOW PROJECTION
WO2014066375A1 (en) * 2012-10-24 2014-05-01 Varian Semiconductor Equipment Associates, Inc. Apparatus for treating ion beam

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6044951A (en) * 1983-07-28 1985-03-11 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Charged particle beam device
JPS61142646A (en) * 1984-12-14 1986-06-30 Nippon Telegr & Teleph Corp <Ntt> Focusing and deflecting device for charged particle beam
US4725736A (en) * 1986-08-11 1988-02-16 Electron Beam Memories Electrostatic electron gun with integrated electron beam deflection and/or stigmating system
AT393333B (en) * 1986-11-27 1991-09-25 Ims Ionen Mikrofab Syst ION PROJECTION DEVICE FOR SHADOW PROJECTION
WO2014066375A1 (en) * 2012-10-24 2014-05-01 Varian Semiconductor Equipment Associates, Inc. Apparatus for treating ion beam

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