JP6440038B2 - 高電圧電界効果トランジスタのための延長型ドレイン構造 - Google Patents
高電圧電界効果トランジスタのための延長型ドレイン構造 Download PDFInfo
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- JP6440038B2 JP6440038B2 JP2016567591A JP2016567591A JP6440038B2 JP 6440038 B2 JP6440038 B2 JP 6440038B2 JP 2016567591 A JP2016567591 A JP 2016567591A JP 2016567591 A JP2016567591 A JP 2016567591A JP 6440038 B2 JP6440038 B2 JP 6440038B2
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Description
Claims (22)
- 延長型ドレイン電界効果トランジスタ(延長型ドレインFET)であって、
半導体本体のチャネル領域上に配置されたゲート電極であって、ゲート誘電体がチャネル領域とゲート電極との間に配置された、ゲート電極と、
前記チャネル領域の第1側面上に配置された前記半導体本体のソース領域に連結されたソースコンタクト金属と、
前記チャネル領域の第2側面上に配置された前記半導体本体のドレイン領域に連結されたドレインコンタクト金属と、
前記チャネル領域と前記ドレイン領域との間において、前記半導体本体の延長型ドレイン領域上に配置されたフィールドプレート電極と、
前記フィールドプレート電極と前記延長型ドレイン領域との間に配置され、前記ドレインコンタクト金属よりも前記ゲート電極の近くに配置されたフィールドプレート誘電体と
を備え、
前記ソースコンタクト金属及び前記ドレインコンタクト金属は、同じ横方向の接触長さを有し、
前記フィールドプレート誘電体の横方向長さは、前記ソースコンタクト金属及び前記ドレインコンタクト金属の前記横方向の接触長さと等しい、
延長型ドレインFET。 - 前記ソースコンタクト金属は、少なくとも前記ゲート電極の2倍の横方向長さで、前記ドレインコンタクト金属と離間され、
前記フィールドプレート誘電体は、前記ゲート誘電体より大きい等価酸化膜厚(EOT)を有し、
前記フィールドプレート誘電体は、少なくともゲート電極の1倍の横方向長さで、前記ドレインコンタクト金属と離間される、
請求項1に記載の延長型ドレインFET。 - 前記ゲート電極から電気的に分離され、前記ゲート電極と同じ横方向長さを有するダミーゲート電極であって、前記延長型ドレイン領域上に配置され、前記ゲート電極と前記ドレインコンタクト金属との間に配置されたダミーゲート電極
をさらに備え、
前記フィールドプレート電極は、前記ゲート電極と前記ダミーゲート電極との間に配置され、
前記フィールドプレート電極は、前記ゲート電極、前記ダミーゲート電極、又は前記ソースコンタクト金属のうちの少なくとも1つに電気的に連結される、
請求項2に記載の延長型ドレインFET。 - 前記フィールドプレート電極は、前記ゲート電極に物理的接触し、又は、
前記フィールドプレート電極は、前記ゲート電極と前記ダミーゲート電極とに物理的接触する、
請求項3に記載の延長型ドレインFET。 - 前記フィールドプレート電極の上面が、前記ソースコンタクト金属及び前記ドレインコンタクト金属の両方の上面と平面的である、請求項3又は4に記載の延長型ドレインFET。
- 前記フィールドプレート電極は、前記ソースコンタクト金属及び前記ドレインコンタクト金属の両方と同じ組成を有する、請求項5に記載の延長型ドレインFET。
- 前記ソースコンタクト金属及び前記ドレインコンタクト金属は、コンタクト金属ピッチを画定し、
前記フィールドプレート誘電体は、前記コンタクト金属ピッチの半分のピッチで配置される、
請求項3から6のいずれか一項に記載の延長型ドレインFET。 - 前記延長型ドレイン領域と、相補的にドープされた半導体との間に配置された前記半導体本体におけるドープされた深いウェルであって、ドレイン‐本体間の静電容量を低減するようにドープされた深いウェル
をさらに備える請求項1から7のいずれか一項に記載の延長型ドレインFET。 - 前記深いウェルは、前記延長型ドレイン領域と同じ有効な導電型にドープされたものであるが、前記延長型ドレイン領域より低い有効な不純物濃度までドープされたものである、請求項8に記載の延長型ドレインFET。
- 前記半導体本体は、半導体基板から延長する非平面構造であり、前記深いウェルは、前記非平面構造と基板との接合部分に配置された、請求項8又は9に記載の延長型ドレインFET。
- 延長型ドレイン電界効果トランジスタ(延長型ドレインFET)であって、
半導体本体のチャネル領域上に配置されたゲート電極であって、ゲート誘電体がその間に配置された、ゲート電極と、
前記チャネル領域の第1側面上に配置された前記半導体本体のソース領域に連結されたソースコンタクト金属と、
前記チャネル領域の第2側面上に配置された前記半導体本体のドレイン領域に連結されたドレインコンタクト金属と
前記チャネル領域と前記ドレイン領域との間において前記半導体本体におけるドープされた延長型ドレイン領域上に配置されたフィールドプレート電極と、
前記フィールドプレート電極と前記延長型ドレイン領域との間に配置されたフィールドプレート誘電体と
前記延長型ドレイン領域と、相補的にドープされた半導体との間に配置された前記半導体本体におけるドープされた深いウェルであって、ドレイン‐本体間の静電容量を低減するようにドープされた深いウェルと
を備え、
前記延長型ドレイン領域は、前記ドレイン領域の横方向長さ全体を覆い、
前記深いウェルは、前記延長型ドレイン領域と同じ有効な導電型にドープされたものであるが、前記延長型ドレイン領域より低い有効な不純物濃度までドープされたものであり、前記延長型ドレイン領域の横方向長さ全体を覆い、
前記ドレイン領域、前記延長型ドレイン領域、および前記深いウェルは、前記半導体本体の側面まで達する
延長型ドレインFET。 - 前記フィールドプレート誘電体は、前記ゲート誘電体より大きい等価酸化膜厚(EOT)を有し、
前記フィールドプレート誘電体は、前記ゲート電極との距離より大きい距離で、前記ドレインコンタクト金属と横方向において離間される、
請求項11に記載の延長型ドレインFET。 - 延長型ドレイン電界効果トランジスタ(延長型ドレインFET)を製造する方法であって、前記方法は、
基板上に配置された半導体本体内に、ドープされた延長型ドレイン領域を形成する段階と、
前記半導体本体内に、ソース領域とドレイン領域とを形成する段階であって、前記ソース領域及び前記ドレイン領域は、チャネル領域と前記延長型ドレイン領域の少なくとも一部により分離される、段階と、
前記延長型ドレイン領域の一部上及び前記チャネル領域上に配置されるゲート誘電体を形成する段階と、
前記ゲート誘電体上に配置されるゲート電極を形成する段階と、
前記チャネル領域と前記ドレイン領域との間において、前記ドレイン領域よりも前記ゲート電極の近くに、前記延長型ドレイン領域上にフィールドプレート誘電体を形成する段階と、
前記フィールドプレート誘電体上にフィールドプレート電極を形成する段階と、
前記ソース領域及び前記ドレイン領域上に、複数の金属コンタクトを形成する段階と
を備え、
前記複数の金属コンタクトは、前記フィールドプレート誘電体の横方向長さと等しい、同じ横方向の接触長さを有する、
方法。 - 前記ドレイン領域よりも前記ゲート電極の近くに、前記フィールドプレート誘電体を前記延長型ドレイン領域上に形成する段階は、
前記延長型ドレイン領域の一部上にダミーゲート誘電体を形成する段階と、
前記ダミーゲート誘電体上にダミーゲート電極を形成する段階と、
前記ゲート電極と前記ダミーゲート電極との間におけるスペースに低誘電率の誘電性材料を堆積する段階とをさらに含み、
前記フィールドプレート電極を形成する段階は、前記低誘電率の誘電性材料上に金属を堆積する段階をさらに含む、
請求項13に記載の方法。 - 延長型ドレイン電界効果トランジスタ(延長型ドレインFET)を製造する方法であって、前記方法は、
基板上に配置された半導体本体内に、ドープされた延長型ドレイン領域を形成する段階と、
前記半導体本体内に、ソース領域とドレイン領域とを形成する段階であって、前記ソース領域及び前記ドレイン領域は、チャネル領域と前記延長型ドレイン領域の少なくとも一部により分離される、段階と、
前記延長型ドレイン領域の一部上及び前記チャネル領域上に配置されるゲート誘電体を形成する段階と、
前記ゲート誘電体上に配置されるゲート電極を形成する段階と、
前記チャネル領域と前記ドレイン領域との間において、前記ドレイン領域よりも前記ゲート電極の近くに、前記延長型ドレイン領域上にフィールドプレート誘電体を形成する段階と、
前記フィールドプレート誘電体上にフィールドプレート電極を形成する段階と、
前記ソース領域及び前記ドレイン領域上に、複数の金属コンタクトを形成する段階と
を備え、
前記ドレイン領域よりも前記ゲート電極の近くに、前記フィールドプレート誘電体を前記延長型ドレイン領域上に形成する段階は、
前記延長型ドレイン領域の一部上にダミーゲート誘電体を形成する段階と、
前記ダミーゲート誘電体上にダミーゲート電極を形成する段階と、
前記ゲート電極と前記ダミーゲート電極との間におけるスペースに低誘電率の誘電性材料を堆積する段階とをさらに含み、
前記フィールドプレート電極を形成する段階は、前記低誘電率の誘電性材料上に金属を堆積する段階をさらに含む、
方法。 - 前記低誘電率の誘電性材料を堆積する段階は、前記ソース領域及び前記ドレイン領域上に前記低誘電率の誘電性材料を堆積する段階をさらに含み、
前記フィールドプレート誘電体を形成する段階は、前記ゲート電極と前記ダミーゲート電極との間において、前記低誘電率の誘電性材料を、前記ゲート誘電体の等価酸化膜厚(EOT)より大きい等価酸化膜厚(EOT)までリセス加工する段階をさらに含み、
前記ソース領域及び前記ドレイン領域上に複数の金属コンタクトを形成する前記段階は、
前記ソース領域及び前記ドレイン領域上の前記低誘電率の誘電性材料を、前記ゲート電極と前記ダミーゲート電極との間に配置された前記低誘電率の誘電性材料に対して、選択的に除去する段階と、前記ソース領域及び前記ドレイン領域上にコンタクト金属を堆積する段階とをさらに含み、
前記フィールドプレート電極を形成する段階は、前記ゲート電極と前記ダミーゲート電極との間において、前記低誘電率の誘電性材料上に前記コンタクト金属を堆積する段階をさらに含む、
請求項14または15に記載の方法。 - 前記方法は、前記ゲート電極及び前記ダミーゲート電極のうちの少なくとも1つの一部を露出させるべく、前記ゲート電極と前記ダミーゲート電極との間において前記低誘電率の誘電性材料をリセス加工する段階をさらに備え、
前記低誘電率の誘電性材料上に前記金属を堆積する段階は、前記ゲート電極及び前記ダミーゲート電極のうちの少なくとも1つの前記露出された一部に接触する前記金属を堆積する段階をさらに含む、
請求項14または15に記載の方法。 - 前記延長型ドレイン領域より深い深さまで不純物種を注入する段階によって、基板上に配置された半導体本体内に、前記延長型ドレイン領域の下にドープされた深いウェルを形成する段階を
さらに備える請求項13から17のいずれか一項に記載の方法。 - 前記不純物種を注入する段階は、前記延長型ドレイン領域における種と同じ種を堆積するが、前記延長型ドレイン領域より低い有効な不純物濃度まで堆積する段階をさらに含む、請求項18に記載の方法。
- 前記基板の非平面延長部に前記半導体本体を形成する段階をさらに備え、
前記ゲート電極及び前記ダミーゲート電極を形成する段階は、第1犠牲ゲート構造を前記ゲート誘電体に置換する段階であって、前記ゲート電極は前記ゲート誘電体上にあり、第1誘電性キャップは前記ゲート誘電体上にある、段階と、
第2犠牲ゲート構造を前記ダミーゲート誘電体に置換する段階であって、前記ダミーゲート電極は前記ダミーゲート誘電体上にあり、第2誘電性キャップは前記ダミーゲート誘電体上にある、段階とをさらに含み、
前記フィールドプレート誘電体を形成する段階は、前記ゲート電極と前記ダミーゲート電極との間において、前記低誘電率の誘電性材料を、前記第1誘電性キャップ及び前記第2誘電性キャップより下となる高さまでリセス加工する段階をさらに含み、
前記フィールドプレート電極を形成する段階は、前記ゲート電極と前記ダミーゲート電極との間における前記リセス加工を埋め戻す段階をさらに含む、
請求項14または15に記載の方法。 - システムオンチップ(SOC)であって、
プロセッサ論理回路と、
前記プロセッサ論理回路に連結されるメモリ回路と、
前記プロセッサ論理回路と連結され、無線送信回路及び無線受信機回路を有するRF回路と、
DC電源を受信する入力部と、前記プロセッサ論理回路、前記メモリ回路、又は前記RF回路のうちの少なくとも1つに連結される出力部とを有する電力管理回路と
を備え、
前記RF回路又は前記電力管理回路のうちの少なくとも1つは、請求項1から12のいずれか一項に記載の延長型ドレイン電界効果トランジスタ(延長型ドレインFET)を有する、
SOC。 - 前記延長型ドレインFETは、前記半導体本体において、前記延長型ドレイン領域と、相補的にドープされた半導体との間に配置されたドープされた深いウェルであって、前記延長型ドレイン領域より低い不純物濃度までドープされた深いウェルをさらに含む、請求項21に記載のSOC。
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WO2015195116A1 (en) | 2015-12-23 |
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US9911815B2 (en) | 2018-03-06 |
KR102218366B1 (ko) | 2021-02-22 |
EP3158587A4 (en) | 2018-05-16 |
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KR20170016326A (ko) | 2017-02-13 |
JP2017522719A (ja) | 2017-08-10 |
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WO2015195116A9 (en) | 2016-06-23 |
TWI575738B (zh) | 2017-03-21 |
EP3158587B1 (en) | 2022-03-30 |
EP4024474A3 (en) | 2022-10-26 |
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