JP6432608B2 - 高周波モジュール - Google Patents
高周波モジュール Download PDFInfo
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- JP6432608B2 JP6432608B2 JP2016566097A JP2016566097A JP6432608B2 JP 6432608 B2 JP6432608 B2 JP 6432608B2 JP 2016566097 A JP2016566097 A JP 2016566097A JP 2016566097 A JP2016566097 A JP 2016566097A JP 6432608 B2 JP6432608 B2 JP 6432608B2
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- 230000005540 biological transmission Effects 0.000 claims description 90
- 230000008878 coupling Effects 0.000 claims description 55
- 238000010168 coupling process Methods 0.000 claims description 55
- 238000005859 coupling reaction Methods 0.000 claims description 55
- 239000000758 substrate Substances 0.000 claims description 49
- 239000004020 conductor Substances 0.000 claims description 14
- 230000005764 inhibitory process Effects 0.000 claims description 14
- 230000003321 amplification Effects 0.000 claims description 10
- 230000002401 inhibitory effect Effects 0.000 claims description 10
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 10
- 230000002776 aggregation Effects 0.000 claims description 7
- 238000004220 aggregation Methods 0.000 claims description 7
- 239000003990 capacitor Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- 238000010897 surface acoustic wave method Methods 0.000 description 11
- 102100032533 ADP/ATP translocase 1 Human genes 0.000 description 7
- 102100026396 ADP/ATP translocase 2 Human genes 0.000 description 7
- 101000718417 Homo sapiens ADP/ATP translocase 2 Proteins 0.000 description 7
- 238000002955 isolation Methods 0.000 description 7
- 101000768061 Escherichia phage P1 Antirepressor protein 1 Proteins 0.000 description 6
- 101000796932 Homo sapiens ADP/ATP translocase 1 Proteins 0.000 description 6
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000008054 signal transmission Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000004891 communication Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 101710148586 ADP,ATP carrier protein 1 Proteins 0.000 description 1
- 101710111394 ADP,ATP carrier protein 1, mitochondrial Proteins 0.000 description 1
- 101710102716 ADP/ATP translocase 1 Proteins 0.000 description 1
- 101100160255 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) YLR154C-H gene Proteins 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
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- H04B1/006—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band using switches for selecting the desired band
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- H04—ELECTRIC COMMUNICATION TECHNIQUE
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- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
- H04B1/50—Circuits using different frequencies for the two directions of communication
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
- H05K1/0203—Cooling of mounted components
- H05K1/0204—Cooling of mounted components using means for thermal conduction connection in the thickness direction of the substrate
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
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- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15313—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a land array, e.g. LGA
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- H01L2924/19101—Disposition of discrete passive components
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Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
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Description
11…増幅回路
12…整合回路
13…サブスイッチ
14,15…デュプレクサ
16…メインスイッチ
20…高域送受信部
20R…抵抗
21…増幅回路
22…整合回路
23…サブスイッチ
24,25…デュプレクサ
24R,25R…抵抗
26…メインスイッチ
100,100A,100B…高周波モジュール
200…基板
211…IC
213…制御IC
214…アンプ素子
212,215…チップ素子
217,219…スイッチIC
241,251…TX端子
242,252…RX端子
261,261A…グランド電極
262…電極
263,266,266A…ビア導体
264,265…内部配線
Claims (9)
- 基板と、前記基板に配置され第1帯域内の信号を送受信する第1送受信部と、前記基板に配置され、前記第1帯域よりも周波数が高い第2帯域内の信号を送受信する第2送受信部と、を備える高周波モジュールであって、
前記第1送受信部は、前記第1帯域内の送信信号を増幅する第1増幅回路を有し、
前記第2送受信部は、前記第2帯域内の送信信号と受信信号とを分波し、前記第2帯域内の受信信号を処理する受信回路に電気的に接続される第2分波回路を有し、
前記基板は、前記第1増幅回路と前記第2分波回路との間に配置され、前記第1増幅回路と前記第2分波回路との結合を阻害する結合阻害素子をさらに備え、
前記第1送受信部及び前記第2送受信部は、前記第1帯域内の信号と前記第2帯域内の信号とを同時に送受信するキャリアアグリゲーションを行う、
高周波モジュール。 - 前記第1送受信部は、前記第1帯域内の信号を送受信する第1アンテナ端子を有し、
前記第2送受信部は、前記第1アンテナ端子とは異なるアンテナ端子であって、前記第2帯域内の信号を送受信する第2アンテナ端子を有し、
前記第1送受信部及び前記第2送受信部は、前記キャリアアグリゲーションを行う場合に、前記第1アンテナ端子及び前記第2アンテナ端子から、前記第1帯域内の信号及び前記第2帯域内の信号を同時に送受信する、
請求項1に記載の高周波モジュール。 - 前記第1送受信部は、前記第1帯域内の送信信号と受信信号とを分波し、前記第1帯域内の受信信号を処理する受信回路に電気的に接続される第1分波回路を有し、
前記第1分波回路は、前記第1帯域内の受信信号を処理する受信回路に電気的に接続される第1受信端子を有し、前記第1アンテナ端子から入力される前記第1帯域内の受信信号を前記第1受信端子へ出力し、前記第1増幅回路で増幅された前記第1帯域内の送信信号を前記第1アンテナ端子へ出力し、
前記第2分波回路は、前記第2帯域内の受信信号を処理する受信回路に電気的に接続される第2受信端子を有し、前記第2アンテナ端子から入力される前記第2帯域内の受信信号を前記第2受信端子へ出力し、第2増幅回路で増幅された前記第2帯域内の送信信号を前記第2アンテナ端子へ出力する、
請求項2に記載の高周波モジュール。 - 前記結合阻害素子は、抵抗、インダクタ、又はキャパシタの少なくともいずれかである、
請求項1〜3のいずれかに記載の高周波モジュール。 - 前記結合阻害素子は、チップ素子である、請求項1〜4のいずれか1項に記載の高周波モジュール。
- 前記結合阻害素子は、前記基板の厚み方向に延伸するビア導体を介して前記基板のグランドに接続される、
請求項1〜5のいずれかに記載の高周波モジュール。 - 前記基板は、前記結合阻害素子が実装される第1面と、前記第1面に対向する第2面とを有し、
前記基板は、前記第2面に複数のグランド電極をさらに備え、
前記結合阻害素子は、前記ビア導体のみを介して前記グランド電極に接続される、
請求項6に記載の高周波モジュール。 - 前記結合阻害素子が前記ビア導体のみを介して接続される前記グランド電極は、前記基板において、前記第1送受信部のグランド及び前記第2送受信部のグランドから電気的に分離される、
請求項7に記載の高周波モジュール。 - 前記結合阻害素子は、ゼロオームの抵抗チップである、
請求項7又は8に記載の高周波モジュール。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2014261517 | 2014-12-25 | ||
JP2014261517 | 2014-12-25 | ||
PCT/JP2015/084487 WO2016104145A1 (ja) | 2014-12-25 | 2015-12-09 | 高周波モジュール |
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JPWO2016104145A1 JPWO2016104145A1 (ja) | 2017-08-31 |
JP6432608B2 true JP6432608B2 (ja) | 2018-12-05 |
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US (1) | US10262875B2 (ja) |
JP (1) | JP6432608B2 (ja) |
CN (1) | CN107113018B (ja) |
WO (1) | WO2016104145A1 (ja) |
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CN108269791B (zh) * | 2018-02-06 | 2023-12-08 | 深圳市傲科光电子有限公司 | 混合印刷电路板 |
JP6954186B2 (ja) * | 2018-03-05 | 2021-10-27 | 株式会社村田製作所 | フィルタ装置、高周波フロントエンド回路および通信装置 |
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JP2004260739A (ja) * | 2003-02-27 | 2004-09-16 | Ngk Spark Plug Co Ltd | 高周波スイッチモジュール及びそれを用いた無線電話通信装置 |
JP2005244336A (ja) * | 2004-02-24 | 2005-09-08 | Kyocera Corp | 電子回路モジュール |
JP4521602B2 (ja) * | 2005-06-06 | 2010-08-11 | ルネサスエレクトロニクス株式会社 | マルチモード高周波回路 |
JP2007124202A (ja) | 2005-10-27 | 2007-05-17 | Kyocera Corp | 高周波モジュールおよび無線通信装置 |
JP2007242695A (ja) * | 2006-03-06 | 2007-09-20 | Alps Electric Co Ltd | 高周波ユニット |
US20110136554A1 (en) * | 2009-12-09 | 2011-06-09 | Joshua Kwan Ho Wong | Mobile communication device with rf-capable flex cable |
US8983384B2 (en) * | 2012-10-30 | 2015-03-17 | Qualcomm Incorporated | Apparatus and method for extending Bluetooth device range |
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US10262875B2 (en) | 2019-04-16 |
WO2016104145A1 (ja) | 2016-06-30 |
CN107113018A (zh) | 2017-08-29 |
CN107113018B (zh) | 2019-10-18 |
JPWO2016104145A1 (ja) | 2017-08-31 |
US20170301561A1 (en) | 2017-10-19 |
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