JP6422424B2 - 半導体デバイスの寄生容量測定システムにおける共振装置、半導体デバイスの寄生容量測定システム、および半導体デバイスの寄生容量の測定方法 - Google Patents

半導体デバイスの寄生容量測定システムにおける共振装置、半導体デバイスの寄生容量測定システム、および半導体デバイスの寄生容量の測定方法 Download PDF

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JP6422424B2
JP6422424B2 JP2015221160A JP2015221160A JP6422424B2 JP 6422424 B2 JP6422424 B2 JP 6422424B2 JP 2015221160 A JP2015221160 A JP 2015221160A JP 2015221160 A JP2015221160 A JP 2015221160A JP 6422424 B2 JP6422424 B2 JP 6422424B2
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terminal
capacitor
semiconductor device
parasitic capacitance
impedance analyzer
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柾宜 平尾
柾宜 平尾
岡田　章
章 岡田
松尾　一成
一成 松尾
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Mitsubishi Electric Corp
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JP2015221160A 2015-11-11 2015-11-11 半導体デバイスの寄生容量測定システムにおける共振装置、半導体デバイスの寄生容量測定システム、および半導体デバイスの寄生容量の測定方法 Active JP6422424B2 (ja)

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US12313663B2 (en) 2020-04-29 2025-05-27 Microsoft Technology Licensing, Llc Method and apparatus for determining gate capacitance
JP7466502B2 (ja) 2021-06-25 2024-04-12 三菱電機株式会社 測定装置
JP7479335B2 (ja) 2021-08-03 2024-05-08 三菱電機株式会社 入力容量測定回路および半導体装置の製造方法
CN119104791B (zh) * 2024-10-11 2025-09-12 浙江大学 一种基于外部电感谐振的igbt模块寄生电容提取方法
KR102874722B1 (ko) * 2024-10-28 2025-10-29 한국과학기술원 반도체 소자의 기생 커패시턴스를 측정하는 시스템 및 방법

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JPS5437582A (en) * 1977-08-29 1979-03-20 Mitsubishi Electric Corp Measuring method for capacity of three-terminal semiconductor element
JP2945015B2 (ja) * 1988-07-06 1999-09-06 日本ヒューレット・パッカード株式会社 直流バイアス印加装置
JP2738828B2 (ja) * 1995-09-08 1998-04-08 アデックス株式会社 静電容量測定方法およびその装置
JP3902063B2 (ja) * 2002-04-30 2007-04-04 三菱重工業株式会社 抵抗値測定装置
JP6431687B2 (ja) * 2014-04-24 2018-11-28 キーサイト テクノロジーズ， インク． ３端子デバイスの端子間容量測定方法及びその装置

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