JP6392061B2 - 電子デバイス、その製造方法、及びその製造装置 - Google Patents

電子デバイス、その製造方法、及びその製造装置 Download PDF

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Publication number
JP6392061B2
JP6392061B2 JP2014203379A JP2014203379A JP6392061B2 JP 6392061 B2 JP6392061 B2 JP 6392061B2 JP 2014203379 A JP2014203379 A JP 2014203379A JP 2014203379 A JP2014203379 A JP 2014203379A JP 6392061 B2 JP6392061 B2 JP 6392061B2
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Japan
Prior art keywords
film
fluorine
metal oxide
gas
boundary
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JP2014203379A
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English (en)
Japanese (ja)
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JP2016072570A (ja
Inventor
里吉　務
務 里吉
石田　寛
寛 石田
和男 佐々木
和男 佐々木
守 古田
守 古田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Kochi Prefectural University Corp
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Tokyo Electron Ltd
Kochi Prefectural University Corp
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Application filed by Tokyo Electron Ltd, Kochi Prefectural University Corp filed Critical Tokyo Electron Ltd
Priority to JP2014203379A priority Critical patent/JP6392061B2/ja
Priority to KR1020150135683A priority patent/KR101973233B1/ko
Priority to CN201510633441.XA priority patent/CN105489655B/zh
Priority to TW104132175A priority patent/TWI666707B/zh
Publication of JP2016072570A publication Critical patent/JP2016072570A/ja
Application granted granted Critical
Publication of JP6392061B2 publication Critical patent/JP6392061B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Formation Of Insulating Films (AREA)
JP2014203379A 2014-10-01 2014-10-01 電子デバイス、その製造方法、及びその製造装置 Active JP6392061B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2014203379A JP6392061B2 (ja) 2014-10-01 2014-10-01 電子デバイス、その製造方法、及びその製造装置
KR1020150135683A KR101973233B1 (ko) 2014-10-01 2015-09-24 전자 디바이스, 그 제조 방법, 및 그 제조 장치
CN201510633441.XA CN105489655B (zh) 2014-10-01 2015-09-29 电子设备及其制造方法和其制造装置
TW104132175A TWI666707B (zh) 2014-10-01 2015-09-30 電子元件、其製造方法及其製造裝置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014203379A JP6392061B2 (ja) 2014-10-01 2014-10-01 電子デバイス、その製造方法、及びその製造装置

Publications (2)

Publication Number Publication Date
JP2016072570A JP2016072570A (ja) 2016-05-09
JP6392061B2 true JP6392061B2 (ja) 2018-09-19

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JP2014203379A Active JP6392061B2 (ja) 2014-10-01 2014-10-01 電子デバイス、その製造方法、及びその製造装置

Country Status (4)

Country Link
JP (1) JP6392061B2 (zh)
KR (1) KR101973233B1 (zh)
CN (1) CN105489655B (zh)
TW (1) TWI666707B (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6924943B2 (ja) * 2017-05-12 2021-08-25 東京エレクトロン株式会社 成膜方法及び成膜装置
CN112687542B (zh) * 2019-10-17 2022-03-29 西安交通大学 一种氢终端金刚石转化为氟终端金刚石的方法
JP2022097012A (ja) * 2020-12-18 2022-06-30 日新電機株式会社 薄膜トランジスタの製造方法
CN112687706A (zh) * 2020-12-29 2021-04-20 深圳市华星光电半导体显示技术有限公司 一种显示面板及显示面板的制备方法
WO2023239181A1 (ko) * 2022-06-09 2023-12-14 서울대학교산학협력단 고이동도 박막 트랜지스터 구동 소자 및 이의 제조방법

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5064747B2 (ja) * 2005-09-29 2012-10-31 株式会社半導体エネルギー研究所 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法
US7738050B2 (en) * 2007-07-06 2010-06-15 Semiconductor Energy Laboratory Co., Ltd Liquid crystal display device
US7897971B2 (en) * 2007-07-26 2011-03-01 Semiconductor Energy Laboratory Co., Ltd. Display device
JP5213422B2 (ja) * 2007-12-04 2013-06-19 キヤノン株式会社 絶縁層を有する酸化物半導体素子およびそれを用いた表示装置
KR101412761B1 (ko) * 2008-01-18 2014-07-02 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
JP2011040422A (ja) * 2009-08-06 2011-02-24 Elpida Memory Inc 半導体基板、半導体装置及び半導体装置の製造方法
KR101847656B1 (ko) * 2009-10-21 2018-05-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
US8629438B2 (en) * 2010-05-21 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8552425B2 (en) * 2010-06-18 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5224012B2 (ja) * 2010-12-08 2013-07-03 日新電機株式会社 シリコン酸窒化膜の形成方法及び半導体デバイス
JP6059566B2 (ja) * 2012-04-13 2017-01-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6157077B2 (ja) 2012-08-29 2017-07-05 キヤノン株式会社 カメラ付き表示装置
JP5454727B1 (ja) * 2013-07-10 2014-03-26 日新電機株式会社 薄膜トランジスタの作製方法

Also Published As

Publication number Publication date
CN105489655B (zh) 2020-02-07
JP2016072570A (ja) 2016-05-09
CN105489655A (zh) 2016-04-13
KR20160039542A (ko) 2016-04-11
TWI666707B (zh) 2019-07-21
KR101973233B1 (ko) 2019-04-26
TW201628093A (zh) 2016-08-01

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