JP6386039B2 - 欠陥の少ないエピタキシャルフォトニックデバイスを提供する方法およびその結果生じる構造 - Google Patents
欠陥の少ないエピタキシャルフォトニックデバイスを提供する方法およびその結果生じる構造 Download PDFInfo
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- 238000000034 method Methods 0.000 title description 8
- 239000000758 substrate Substances 0.000 claims description 55
- 239000000463 material Substances 0.000 claims description 42
- 238000002955 isolation Methods 0.000 claims description 31
- 239000004065 semiconductor Substances 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 11
- 229920005591 polysilicon Polymers 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 7
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 claims description 5
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- 239000010410 layer Substances 0.000 description 13
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000003989 dielectric material Substances 0.000 description 6
- 229910021332 silicide Inorganic materials 0.000 description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
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- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 241000408659 Darpa Species 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
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Description
続いて、図6に示されるように、光検出器115を形成するための材料を、開口112内でエピタキシャル成長させる。成長させられる材料は、ゲルマニウムもしくはシリコン/ゲルマニウム、またはGaN、InP、InGaAsなどの他の材料とすることができ、それらの材料は、本技術分野で既知のとおり、光検出器または他のフォトニックデバイスを形成するために使用することができる。重要なことに、光検出器材料のエピタキシャル成長は、横方向と同様垂直方向にも進行する。横方向の成長は、開口112の内側に向けて突出して張り出し部(ledge)を形成しているSTI領域103の側縁部分103aの上に、光検出器材料の一部を成長させる。図6に示される横方向の広さd2は、光検出器115の成長中に応力の除去をもたらし、成長した光検出器115の側縁における転位および積層欠陥の発生を低減する。さらに、光導電体115の側縁はそれでも幾らかの転位および積層欠陥などの欠陥151を含み得るわけだが、重なりd2のために、光導電体115の側縁は、光検出器115のより中心に近い位置から、電荷移動がより起こりにくい領域へと移される。窒化物ライナー113の側壁とシャロー・トレンチ・アイソレーション領域の上部表面とが交わる角151では、より多くの積層欠陥および転位も発生しやすいため、光導電体115の高さhは、角領域151における積層欠陥および転位の電気的な影響を最小化するのに十分なものである。したがって、光検出器115内での光変換の働きのほとんどが生じるであろう場所には、欠陥がさらに一層少ない。一般的には、成長した光導電体材料115の高さhは、その上で成長が生じる側縁突出103aの距離d2に対して、約1:1の比率とすることができる。約という語は、1:1の比率における(プラスまたはマイナス)10%までの差異を包含する。
Claims (23)
- ある一つの一直線上であって互いの間が離隔された第1及び第2のトレンチ絶縁領域を含む半導体基板であって、前記第1及び第2のトレンチ絶縁領域の夫々の上部表面と同一の高さの上部表面を備える半導体基板と、
エピタキシャルなフォトニックデバイスであって、前記フォトニックデバイスの両端の側縁の一方及び他方が前記第1及び第2のトレンチ絶縁領域の上に夫々広がるように、前記フォトニックデバイスが前記半導体基板の前記上部表面と接触し、前記フォトニックデバイスの両端の側縁の一方及び他方が夫々前記第1及び第2のトレンチ絶縁領域の前記上部表面と接触して、形成されるフォトニックデバイスと、
を含み、
前記ある一つの一直線と平行に走る別の一直線上では、前記フォトニックデバイスの両端の側縁共に前記トレンチ絶縁領域上に広がらないように前記半導体基板の表面が前記フォトニックデバイスによって覆われる、
フォトニック構造。 - 前記フォトニックデバイスは光検出器を含む、
請求項1に記載のフォトニック構造。 - 前記互いの間が離隔された前記第1及び第2のトレンチ絶縁領域は、シャロー・トレンチ・アイソレーション領域を含む、
請求項1に記載のフォトニック構造。 - 電子回路と共通の基板の上に集積される、
請求項1に記載のフォトニック構造。 - 前記基板は、結晶シリコン基板を含む、
請求項1に記載のフォトニック構造。 - 前記光検出器と光学的に連絡しており前記基板の上に形成された導波路をさらに含む、
請求項2に記載のフォトニック構造。 - 前記光検出器は、ゲルマニウムおよびシリコン/ゲルマニウムのみから成る群から選択される材料を含む、
請求項2に記載のフォトニック構造。 - 前記互いの間が離隔された前記第1及び第2のトレンチ絶縁領域は、シャロー・トレンチ・アイソレーション領域を含む、
請求項2に記載のフォトニック構造。 - 前記光検出器の上に、ドープされたシリコン材料をさらに含む、
請求項2に記載のフォトニック構造。 - 前記光検出器は、高さを有し、前記高さと約1:1の関係にある距離の分だけ前記トレンチ絶縁領域に重なる、
請求項2に記載のフォトニック構造。 - 前記導波路は、前記光検出器と光学的に連絡している、
請求項6に記載のフォトニック構造。 - 導波路と前記光検出器の側縁との間に、光透過性誘電体をさらに含む、
請求項7に記載のフォトニック構造。 - 導波路のコアはポリシリコンを含む、
請求項8に記載のフォトニック構造。 - 第一の導電型の第一のドープされた接触と、逆の導電型の第二のドープされた接触とをさらに含み、
前記第一および第二のドープされた接触は、前記光検出器の上部表面と電気的に連絡している、
請求項10に記載のフォトニック構造。 - 第一の導電型の第一のドープされた接触と、逆の導電型の第二のドープされた接触とをさらに含み、
前記第一のドープされた接触は、前記光検出器の上部表面と電気的に連絡しており、前記第二のドープされた接触は、前記基板の上部表面と電気的に連絡している、
請求項10に記載のフォトニック構造。 - ある一つの一直線上であって互いの間が離隔された第1及び第2のシャロー・トレンチ・アイソレーション領域を含む結晶シリコン基板であって、前記第1及び第2のシャロー・トレンチ・アイソレーション領域の夫々の上部表面と同じ高さの上部表面を備える結晶シリコン基板と、
前記互いの間が離隔された前記第1及び第2のシャロー・トレンチ・アイソレーション領域同士の間の、前記シリコン基板の前記上部表面の上であって前記結晶シリコン基板の前記上部表面と接触したエピタキシャルな光検出器であって、その両端の一方及び他方がそれぞれ前記互いの間が離隔された前記第1及び第2のシャロー・トレンチ・アイソレーション領域の前記上部表面と重なる、光検出器と、
を含み、
前記ある一つの一直線と平行に走る別の一直線上では、前記光検出器の両端の側縁共に前記シャロー・トレンチ・アイソレーション領域上に広がらないように前記結晶シリコン基板の表面が前記光検出器によって覆われる、
フォトニック構造。 - 前記光検出器と光学的に連絡しており前記基板の上に形成された導波路をさらに含む、
請求項16に記載のフォトニック構造。 - 前記導波路は、ポリシリコンコアと、前記コア周囲の誘電クラッド材料とを含む、
請求項17に記載のフォトニック構造。 - 前記光検出器は、高さが、下側の角の欠陥領域の高さよりも高い、
請求項16に記載のフォトニック構造。 - 前記光検出器は高さを有し、前記高さと約1:1の関係にある距離の分だけ、前記シャ
ロー・トレンチ・アイソレーション領域に重なる、
請求項16に記載のフォトニック構造。 - 電気回路と共通の基板の上に集積される、
請求項16に記載のフォトニック構造。 - 前記フォトニックデバイスによって覆われない前記半導体基板の表面に電極が設けられた、
請求項1に記載のフォトニック構造。 - 前記光検出器によって覆われない前記結晶シリコン基板上に電極が設けられた、
請求項16に記載のフォトニック構造。
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US14/055,990 US9184191B2 (en) | 2013-10-17 | 2013-10-17 | Method providing an epitaxial photonic device having a reduction in defects and resulting structure |
PCT/US2014/060884 WO2015102724A2 (en) | 2013-10-17 | 2014-10-16 | Method providing an epitaxial photonic device having a reduction in defects and resulting structure |
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JP2002118280A (ja) * | 2000-10-05 | 2002-04-19 | Sharp Corp | 半導体受光装置 |
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EP3058593A4 (en) | 2017-05-17 |
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US20150108596A1 (en) | 2015-04-23 |
CN105637639A (zh) | 2016-06-01 |
WO2015102724A3 (en) | 2015-09-24 |
CN105637639B (zh) | 2019-11-26 |
EP3058593B1 (en) | 2021-02-17 |
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