JP6374698B2 - 信号処理装置 - Google Patents

信号処理装置 Download PDF

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Publication number
JP6374698B2
JP6374698B2 JP2014101072A JP2014101072A JP6374698B2 JP 6374698 B2 JP6374698 B2 JP 6374698B2 JP 2014101072 A JP2014101072 A JP 2014101072A JP 2014101072 A JP2014101072 A JP 2014101072A JP 6374698 B2 JP6374698 B2 JP 6374698B2
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JP
Japan
Prior art keywords
transistor
oxide semiconductor
gate
potential
drain
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Expired - Fee Related
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JP2014101072A
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English (en)
Japanese (ja)
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JP2014241407A5 (enExample
JP2014241407A (ja
Inventor
竹村　保彦
保彦 竹村
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2014101072A priority Critical patent/JP6374698B2/ja
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Publication of JP2014241407A5 publication Critical patent/JP2014241407A5/ja
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
    • H03K19/1733—Controllable logic circuits
    • H03K19/1737—Controllable logic circuits using multiplexers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Logic Circuits (AREA)
JP2014101072A 2013-05-16 2014-05-15 信号処理装置 Expired - Fee Related JP6374698B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014101072A JP6374698B2 (ja) 2013-05-16 2014-05-15 信号処理装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013104129 2013-05-16
JP2013104129 2013-05-16
JP2014101072A JP6374698B2 (ja) 2013-05-16 2014-05-15 信号処理装置

Publications (3)

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JP2014241407A JP2014241407A (ja) 2014-12-25
JP2014241407A5 JP2014241407A5 (enExample) 2017-06-29
JP6374698B2 true JP6374698B2 (ja) 2018-08-15

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Family Applications (1)

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JP2014101072A Expired - Fee Related JP6374698B2 (ja) 2013-05-16 2014-05-15 信号処理装置

Country Status (2)

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US (1) US9704886B2 (enExample)
JP (1) JP6374698B2 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9853053B2 (en) 2012-09-10 2017-12-26 3B Technologies, Inc. Three dimension integrated circuits employing thin film transistors
WO2016099580A2 (en) 2014-12-23 2016-06-23 Lupino James John Three dimensional integrated circuits employing thin film transistors
JP6489216B2 (ja) * 2015-01-21 2019-03-27 日本電気株式会社 再構成可能回路およびその利用方法
US9812587B2 (en) 2015-01-26 2017-11-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2016154225A (ja) 2015-02-12 2016-08-25 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
TWI718125B (zh) 2015-03-03 2021-02-11 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP6705663B2 (ja) 2015-03-06 2020-06-03 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US9882061B2 (en) 2015-03-17 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI777164B (zh) 2015-03-30 2022-09-11 日商半導體能源研究所股份有限公司 半導體裝置的製造方法
US10460984B2 (en) 2015-04-15 2019-10-29 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating electrode and semiconductor device
US10192995B2 (en) 2015-04-28 2019-01-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10164120B2 (en) 2015-05-28 2018-12-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR102548001B1 (ko) 2015-07-08 2023-06-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US11189736B2 (en) 2015-07-24 2021-11-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9825177B2 (en) 2015-07-30 2017-11-21 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of a semiconductor device using multiple etching mask
US9773919B2 (en) 2015-08-26 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI721026B (zh) 2015-10-30 2021-03-11 日商半導體能源研究所股份有限公司 電容器、半導體裝置、模組以及電子裝置的製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7064973B2 (en) 2004-02-03 2006-06-20 Klp International, Ltd. Combination field programmable gate array allowing dynamic reprogrammability
EP2526622B1 (en) 2010-01-20 2015-09-23 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device
KR101840797B1 (ko) 2010-03-19 2018-03-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 메모리 장치
KR101884031B1 (ko) 2010-04-07 2018-07-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치
WO2012014786A1 (en) 2010-07-30 2012-02-02 Semiconductor Energy Laboratory Co., Ltd. Semicondcutor device and manufacturing method thereof
KR101899880B1 (ko) 2011-02-17 2018-09-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 프로그래머블 ｌｓｉ
JP2012204896A (ja) 2011-03-24 2012-10-22 Toshiba Corp 不揮発プログラマブルロジックスイッチ
US8476927B2 (en) 2011-04-29 2013-07-02 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
KR101889383B1 (ko) 2011-05-16 2018-08-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 프로그래머블 로직 디바이스
TWI571058B (zh) 2011-05-18 2017-02-11 半導體能源研究所股份有限公司 半導體裝置與驅動半導體裝置之方法
US8581625B2 (en) 2011-05-19 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
US8779799B2 (en) 2011-05-19 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Logic circuit
JP5892852B2 (ja) * 2011-05-20 2016-03-23 株式会社半導体エネルギー研究所 プログラマブルロジックデバイス
US9106223B2 (en) * 2013-05-20 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Signal processing device

Also Published As

Publication number Publication date
US20140339540A1 (en) 2014-11-20
US9704886B2 (en) 2017-07-11
JP2014241407A (ja) 2014-12-25

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