JP6373096B2 - 荷電粒子ビームシステム及びその作動方法 - Google Patents
荷電粒子ビームシステム及びその作動方法 Download PDFInfo
- Publication number
- JP6373096B2 JP6373096B2 JP2014140038A JP2014140038A JP6373096B2 JP 6373096 B2 JP6373096 B2 JP 6373096B2 JP 2014140038 A JP2014140038 A JP 2014140038A JP 2014140038 A JP2014140038 A JP 2014140038A JP 6373096 B2 JP6373096 B2 JP 6373096B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- ion source
- field ion
- housing
- gas field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/26—Ion sources; Ion guns using surface ionisation, e.g. field effect ion sources, thermionic ion sources
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Electron Sources, Ion Sources (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361843785P | 2013-07-08 | 2013-07-08 | |
US61/843,785 | 2013-07-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015018806A JP2015018806A (ja) | 2015-01-29 |
JP6373096B2 true JP6373096B2 (ja) | 2018-08-15 |
Family
ID=52257306
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014140038A Active JP6373096B2 (ja) | 2013-07-08 | 2014-07-07 | 荷電粒子ビームシステム及びその作動方法 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP6373096B2 (zh) |
CN (1) | CN104282517B (zh) |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02215028A (ja) * | 1989-02-14 | 1990-08-28 | Sumitomo Electric Ind Ltd | 電界放射型ガスイオン源 |
EP0457049A3 (en) * | 1990-04-19 | 1992-01-22 | Kabushiki Kaisha Toshiba | Dry etching method |
US6724001B1 (en) * | 2003-01-08 | 2004-04-20 | International Business Machines Corporation | Electron beam lithography apparatus with self actuated vacuum bypass valve |
CN101361159B (zh) * | 2005-12-02 | 2013-01-02 | 阿利斯公司 | 离子源、系统和方法 |
JP4887344B2 (ja) * | 2007-12-14 | 2012-02-29 | 株式会社日立ハイテクノロジーズ | ガス電界電離イオン源,走査荷電粒子顕微鏡,光軸調整方法、及び試料観察方法 |
EP2088613B1 (en) * | 2008-02-08 | 2015-10-14 | ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Use of a dual mode gas field ion source |
JP5194133B2 (ja) * | 2009-01-15 | 2013-05-08 | 株式会社日立ハイテクノロジーズ | イオンビーム装置 |
JP5178926B2 (ja) * | 2010-02-08 | 2013-04-10 | 株式会社日立ハイテクノロジーズ | 荷電粒子顕微鏡及びイオン顕微鏡 |
JP2011210492A (ja) * | 2010-03-29 | 2011-10-20 | Sii Nanotechnology Inc | 集束イオンビーム装置 |
WO2012086419A1 (ja) * | 2010-12-22 | 2012-06-28 | 株式会社日立ハイテクノロジーズ | 荷電粒子放出銃及び荷電粒子線装置 |
-
2014
- 2014-07-07 JP JP2014140038A patent/JP6373096B2/ja active Active
- 2014-07-08 CN CN201410323361.XA patent/CN104282517B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN104282517B (zh) | 2018-02-16 |
JP2015018806A (ja) | 2015-01-29 |
CN104282517A (zh) | 2015-01-14 |
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