JP6368350B2 - 反応性溶融物浸透セラミックス基複合材料 - Google Patents
反応性溶融物浸透セラミックス基複合材料 Download PDFInfo
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- JP6368350B2 JP6368350B2 JP2016502911A JP2016502911A JP6368350B2 JP 6368350 B2 JP6368350 B2 JP 6368350B2 JP 2016502911 A JP2016502911 A JP 2016502911A JP 2016502911 A JP2016502911 A JP 2016502911A JP 6368350 B2 JP6368350 B2 JP 6368350B2
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- 239000011153 ceramic matrix composite Substances 0.000 title description 17
- 239000000919 ceramic Substances 0.000 claims description 120
- 239000000835 fiber Substances 0.000 claims description 76
- 230000005496 eutectics Effects 0.000 claims description 64
- 239000000463 material Substances 0.000 claims description 60
- 239000011159 matrix material Substances 0.000 claims description 57
- 238000000034 method Methods 0.000 claims description 38
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- 239000011248 coating agent Substances 0.000 claims description 32
- 239000000470 constituent Substances 0.000 claims description 31
- 229910052710 silicon Inorganic materials 0.000 claims description 31
- 239000010703 silicon Substances 0.000 claims description 31
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 30
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 25
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- 229910052582 BN Inorganic materials 0.000 claims description 15
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 15
- 229910052580 B4C Inorganic materials 0.000 claims description 14
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 claims description 14
- 239000000289 melt material Substances 0.000 claims description 12
- WEAMLHXSIBDPGN-UHFFFAOYSA-N (4-hydroxy-3-methylphenyl) thiocyanate Chemical compound CC1=CC(SC#N)=CC=C1O WEAMLHXSIBDPGN-UHFFFAOYSA-N 0.000 claims description 11
- 229910021355 zirconium silicide Inorganic materials 0.000 claims description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- 229910052726 zirconium Inorganic materials 0.000 claims description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 7
- 229910052796 boron Inorganic materials 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 229910007948 ZrB2 Inorganic materials 0.000 claims description 3
- VWZIXVXBCBBRGP-UHFFFAOYSA-N boron;zirconium Chemical compound B#[Zr]#B VWZIXVXBCBBRGP-UHFFFAOYSA-N 0.000 claims description 3
- 238000001764 infiltration Methods 0.000 description 21
- 230000008595 infiltration Effects 0.000 description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
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- UVGLBOPDEUYYCS-UHFFFAOYSA-N silicon zirconium Chemical group [Si].[Zr] UVGLBOPDEUYYCS-UHFFFAOYSA-N 0.000 description 5
- WHJFNYXPKGDKBB-UHFFFAOYSA-N hafnium;methane Chemical compound C.[Hf] WHJFNYXPKGDKBB-UHFFFAOYSA-N 0.000 description 4
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- 238000005229 chemical vapour deposition Methods 0.000 description 3
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- 238000005240 physical vapour deposition Methods 0.000 description 3
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
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- 150000004767 nitrides Chemical class 0.000 description 2
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- 229910052581 Si3N4 Inorganic materials 0.000 description 1
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- 229910045601 alloy Inorganic materials 0.000 description 1
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- 238000010586 diagram Methods 0.000 description 1
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- 238000009713 electroplating Methods 0.000 description 1
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- 239000007789 gas Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
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- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 238000000626 liquid-phase infiltration Methods 0.000 description 1
- 229910021471 metal-silicon alloy Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
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- 239000003870 refractory metal Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000007582 slurry-cast process Methods 0.000 description 1
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- 238000005728 strengthening Methods 0.000 description 1
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- 238000005496 tempering Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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Description
本出願は、2013年3月15日出願の、「反応性溶融物浸透セラミックス基複合材料(Reactive Melt Infiltrated Ceramic Matrix Composite)」という名称の米国仮出願第61/802,199号、及び2013年12月27出願の米国特許出願第14/141,969号の優先権を主張し、その全容は参照により本明細書に組み込まれる。
セラミック繊維構造は、炭化物を含むことができる。セラミック繊維構造の少なくとも一部は、炭化ケイ素、炭化ジルコニウム、及び炭化ハフニウムからなる群からの少なくとも1つを含むことができる。
(付記)
(付記1)
セラミック繊維プリフォームを用意するステップと、
セラミック繊維プリフォームに窒化ホウ素界面コーティングを被覆するステップと、
セラミック繊維プリフォームにセラミック母材を浸透させるステップと、
セラミック繊維プリフォームに構成材料を浸透させるステップと、
セラミック繊維プリフォームに共晶溶融物材料を浸透させるステップと
を含む、方法。
(付記2)
被覆するステップが、化学気相浸透法により被覆することをさらに含む、付記1に記載の方法。
(付記3)
セラミック繊維プリフォームに浸透させるステップが、ポリマー浸透、化学気相浸透、及びスラリー浸透からなる群から選択される少なくとも1つの操作により浸透させることをさらに含む、付記2に記載の方法。
(付記4)
セラミック繊維プリフォームを熱処理するステップをさらに含む、付記1に記載の方法。
(付記5)
セラミック繊維プリフォームを用意するステップが、炭化ケイ素を使用することをさらに含む、付記1に記載の方法。
(付記6)
セラミック繊維プリフォームにセラミック母材を浸透させるステップが、炭化ケイ素を浸透させることをさらに含む、付記1に記載の方法。
(付記7)
セラミック繊維プリフォームに構成材料を浸透させるステップが、炭化ホウ素を使用することをさらに含む、付記1に記載の方法。
(付記8)
セラミック繊維プリフォームに共晶溶融物材料を浸透させるステップが、遷移金属−ケイ素共晶溶融物を使用することをさらに含む、付記1に記載の方法。
(付記9)
セラミック繊維プリフォームに共晶溶融物材料を浸透させるステップが、ケイ化ジルコニウムを使用することをさらに含む、付記1に記載の方法。
(付記10)
セラミック繊維構造及び窒化ホウ素界面コーティングを含む被覆プリフォームを製造するステップと、
被覆プリフォームにセラミック母材を浸透させるステップと、
被覆プリフォーム及びセラミック母材に構成材料を浸透させるステップと、
構成材料を有する被覆プリフォーム及びセラミック母材に、金属共晶溶融物を浸透させるステップと
を含む、方法。
(付記11)
被覆プリフォームを製造するステップが、20から40体積パーセントの範囲の繊維を備えるセラミック繊維構造を形成することをさらに含む、付記10に記載の方法。
(付記12)
被覆プリフォームにセラミック母材を浸透させるステップが、20から40体積パーセントの範囲の炭化ケイ素を備えるセラミック母材を与えることをさらに含む、付記11に記載の方法。
(付記13)
被覆プリフォーム及びセラミック母材に構成材料を浸透させるステップが、5から15体積パーセントの範囲の構成材料を用意することをさらに含む、付記12に記載の方法。
(付記14)
被覆プリフォーム及び構成材料を有するセラミック母材に金属共晶溶融物を浸透させるステップが、少なくとも10体積パーセントまで金属共晶溶融物を浸透させることをさらに含む、付記13に記載の方法。
(付記15)
セラミック繊維構造と、
窒化ホウ素界面コーティングと、
構成材料および金属共晶溶融物を含むセラミック母材と、
を備えた、装置。
(付記16)
セラミック母材が5%未満の気孔率をさらに含む、付記15に記載の装置。
(付記17)
セラミック母材が残留ケイ素を含まない、付記15に記載の装置。
(付記18)
セラミック繊維構造が、炭化ケイ素、炭化ジルコニウム、及び炭化ハフニウムからなる群からの少なくとも1つの材料をさらに含む、付記15に記載の装置。
(付記19)
セラミック母材が炭化ケイ素をさらに含む、付記18に記載の装置。
(付記20)
構成材料が、炭化ホウ素、ホウ素、及び炭素からなる群からの少なくとも1つの材料をさらに含む、付記19に記載の装置。
(付記21)
金属共晶溶融物が、遷移金属−ケイ素共晶溶融物、遷移金属−ホウ化物共晶溶融物、及び遷移金属−炭化物共晶溶融物からなる群からの少なくとも1つの材料をさらに含む、付記20に記載の装置。
(付記22)
金属共晶溶融物が、ホウ化ジルコニウム、炭化ジルコニウム、及びケイ化ジルコニウムからなる群からの少なくとも1つの材料をさらに含む、付記20に記載の装置。
Claims (14)
- セラミック繊維プリフォームを用意するステップと、
セラミック繊維プリフォームに窒化ホウ素界面コーティングを被覆するステップと、
セラミック繊維プリフォームにセラミック母材として炭化ケイ素を浸透させるステップと、
セラミック繊維プリフォームに、炭化ホウ素、炭素、ホウ素又はこれらの組合せを含む構成材料を浸透させるステップと、
セラミック繊維プリフォームに、存在する最低溶融温度成分の融点が、金属ケイ素に比べて高くなるように共晶溶融物材料を浸透させるステップと、
を含む、方法。 - セラミック繊維プリフォームを熱処理するステップをさらに含む、請求項1に記載の方法。
- セラミック繊維プリフォームが、炭化ケイ素繊維を備える、請求項1に記載の方法。
- セラミック繊維プリフォームに構成材料を浸透させるステップが、炭化ホウ素を浸透させることを備える、請求項1に記載の方法。
- 共晶溶融物材料が、ジルコニウムとケイ素とを含む、請求項1に記載の方法。
- 共晶溶融物材料が、97.1重量パーセントのジルコニウムと、2.9重量%のケイ素とを含む、請求項5に記載の方法。
- セラミック繊維構造と、セラミックス繊維構造の上にある窒化ホウ素界面コーティングと、を含む被覆プリフォームを製造するステップと、
被覆プリフォームにセラミック母材として炭化ケイ素を浸透させるステップと、
被覆プリフォーム及びセラミック母材に、炭化ホウ素、炭素、ホウ素又はこれらの組合せを含む構成材料を浸透させるステップと、
構成材料を有する被覆プリフォーム及びセラミック母材に、存在する最低溶融温度成分の融点が、金属ケイ素に比べて高くなるように金属共晶溶融物を浸透させるステップと、
を含む、方法。 - 金属共晶溶融物が、ジルコニウムとケイ素とを含む、請求項7に記載の方法。
- 被覆プリフォームにセラミック母材を浸透させるステップが、20から40体積パーセントの範囲の炭化ケイ素を備えるセラミック母材を与えることをさらに含む、請求項7に記載の方法。
- 構成材料を有する被覆プリフォーム及びセラミック母材に金属共晶溶融物を浸透させるステップが、少なくとも10体積パーセントまで金属共晶溶融物を浸透させることをさらに含む、請求項7に記載の方法。
- 炭化物系繊維を備えたセラミック繊維構造と、
セラミック繊維構造の上にある窒化ホウ素界面コーティングと、
炭化ケイ素およびケイ化ジルコニウムを含むセラミック母材と、
を備え、
セラミック母材が、残留(金属)ケイ素を含まない、装置。 - セラミック母材が5%未満の気孔率をさらに含む、請求項11に記載の装置。
- セラミック母材が二ホウ化ジルコニウムをさらに含む、請求項11に記載の装置。
- セラミック母材が、炭化ホウ素をさらに含む、請求項13に記載の装置。
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US201361802199P | 2013-03-15 | 2013-03-15 | |
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US14/141,969 | 2013-12-27 | ||
US14/141,969 US9701578B2 (en) | 2013-03-15 | 2013-12-27 | Reactive melt infiltrated-ceramic matrix composite |
PCT/US2014/028827 WO2014144420A1 (en) | 2013-03-15 | 2014-03-14 | Reactive melt infiltrated ceramic matrix composite |
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US11028486B2 (en) | 2018-12-04 | 2021-06-08 | General Electric Company | Coating systems including infiltration coatings and reactive phase spray formulation coatings |
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