JP6350932B2 - Bonding head having suction member that can be heated and cooled - Google Patents
Bonding head having suction member that can be heated and cooled Download PDFInfo
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- JP6350932B2 JP6350932B2 JP2014002309A JP2014002309A JP6350932B2 JP 6350932 B2 JP6350932 B2 JP 6350932B2 JP 2014002309 A JP2014002309 A JP 2014002309A JP 2014002309 A JP2014002309 A JP 2014002309A JP 6350932 B2 JP6350932 B2 JP 6350932B2
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- 238000001816 cooling Methods 0.000 claims description 36
- 238000010438 heat treatment Methods 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 17
- 239000002826 coolant Substances 0.000 claims description 7
- 229910010293 ceramic material Inorganic materials 0.000 claims description 4
- 239000000758 substrate Substances 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C66/00—General aspects of processes or apparatus for joining preformed parts
- B29C66/90—Measuring or controlling the joining process
- B29C66/91—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux
- B29C66/912—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux by measuring the temperature, the heat or the thermal flux
- B29C66/9121—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux by measuring the temperature, the heat or the thermal flux by measuring the temperature
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B30—PRESSES
- B30B—PRESSES IN GENERAL
- B30B15/00—Details of, or accessories for, presses; Auxiliary measures in connection with pressing
- B30B15/06—Platens or press rams
- B30B15/062—Press plates
- B30B15/064—Press plates with heating or cooling means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B30—PRESSES
- B30B—PRESSES IN GENERAL
- B30B15/00—Details of, or accessories for, presses; Auxiliary measures in connection with pressing
- B30B15/34—Heating or cooling presses or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/75252—Means for applying energy, e.g. heating means in the upper part of the bonding apparatus, e.g. in the bonding head
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/7528—Resistance welding electrodes, i.e. for ohmic heating
- H01L2224/75282—Resistance welding electrodes, i.e. for ohmic heating in the upper part of the bonding apparatus, e.g. in the bonding head
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/755—Cooling means
- H01L2224/75502—Cooling means in the upper part of the bonding apparatus, e.g. in the bonding head
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/757—Means for aligning
- H01L2224/75743—Suction holding means
- H01L2224/75745—Suction holding means in the upper part of the bonding apparatus, e.g. in the bonding head
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Thermal Sciences (AREA)
- Wire Bonding (AREA)
- Die Bonding (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
本発明は、加熱及び冷却可能な吸引部材を有するボンドヘッドに関する。 The present invention relates to a bond head having a suction member that can be heated and cooled.
［優先権の主張］
本出願人は、２０１３年１月２１日に出願されたスイス特許出願第２４５／１３号からの優先権を主張し、この出願の開示は参照により本明細書に援用される。
[Priority claim]
The applicant claims priority from Swiss patent application No. 245/13 filed on 21 January 2013, the disclosure of which is incorporated herein by reference.
そのようなボンディングヘッドは、半導体産業において、（ダイとして知られている）半導体チップの基板に対する通常の接合又は熱圧着に用いられる。接続部の形成は、温度及び任意選択的な圧力の作用下で生じる。 Such bonding heads are used in the semiconductor industry for normal bonding or thermocompression bonding of a semiconductor chip (known as a die) to a substrate. Connection formation occurs under the action of temperature and optional pressure.
熱圧着等の特定の接合プロセスは、基板に対する接合中の半導体チップの加熱及び冷却、すなわち、極端な加熱速度及び冷却速度を有する温度プロファイルを生じさせることを必要とする。この加熱及び冷却は時間を要し、サイクル時間、したがって機械のスループットを実質的に決定する。 Certain bonding processes such as thermocompression require heating and cooling of the semiconductor chip during bonding to the substrate, i.e. generating a temperature profile with extreme heating and cooling rates. This heating and cooling is time consuming and substantially determines the cycle time and thus the machine throughput.
特許文献１から、熱圧着ヘッドであって、熱圧着ヘッドにねじ留めされるセラミクスから作られる吸引部材を備える、熱圧着ヘッドが既知である。吸引部材は、吸引部材の凹部に取り付けられる抵抗加熱を含む。熱電素子が吸引部材の外側に更に配置される。吸引部材の上面は凹部を含むため、熱圧着ヘッドと吸引部材との間に冷却流路が形成され、この冷却流路に、吸引部材を冷却する圧縮空気を供給することができる。圧縮空気は、冷却流路を通って水平方向に流れ、それらの端部において周囲環境に達する。 From US Pat. No. 6,057,049, a thermocompression bonding head is known which comprises a suction member made of ceramics screwed to the thermocompression bonding head. The suction member includes resistance heating attached to the recess of the suction member. A thermoelectric element is further arranged outside the suction member. Since the upper surface of the suction member includes a recess, a cooling flow path is formed between the thermocompression bonding head and the suction member, and compressed air for cooling the suction member can be supplied to the cooling flow path. The compressed air flows horizontally through the cooling channel and reaches the ambient environment at their ends.
特許文献２から、一体的なヒーター、及び圧縮空気を供給することができる冷却流路を有するボンディングヘッド本体、並びに真空によってボンディングヘッド本体に対して保持することができる吸引部材を備える熱圧着ヘッドが既知である。吸引部材も、圧縮空気を供給することができる冷却流路を含む。 From Patent Document 2, a thermocompression bonding head including an integrated heater, a bonding head main body having a cooling channel capable of supplying compressed air, and a suction member that can be held against the bonding head main body by vacuum is disclosed. Known. The suction member also includes a cooling channel that can supply compressed air.
現行の技術水準から既知であるそのようなボンディングヘッドの場合、１００℃／秒の加熱速度で半導体チップを加熱し、５０℃／秒の冷却速度で半導体チップを冷却することが可能である。 For such a bonding head known from the state of the art, it is possible to heat the semiconductor chip at a heating rate of 100 ° C./second and to cool the semiconductor chip at a cooling rate of 50 ° C./second.
本発明は、そのようなボンディングヘッドを改良し、すなわち特に吸引部材の加熱速度及び冷却速度を高めるという目的に基づくものである。 The present invention is based on the object of improving such a bonding head, in particular increasing the heating and cooling rates of the suction member.
本明細書に組み込まれて本明細書の一部をなす添付の図面は、本発明の１つ又は複数の実施形態を示し、詳細な説明とともに、本発明の原理及び実施態様を説明する役割を果たす。図面は一定の縮尺では描かれていない。 The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate one or more embodiments of the invention and, together with the detailed description, serve to explain the principles and embodiments of the invention. Fulfill. The drawings are not drawn to scale.
半導体実装装置が、半導体チップを次々に取り上げて基板上に配置するピックアンドプレースシステムを含む。ピックアンドプレースシステムはボンディングヘッド１を含む。図１は、本発明の理解に必要な、ボンディングヘッド１の部分を概略的に示している。ボンディングヘッド１は、ピックアンドプレースシステムに対して、基板の表面に垂直に延びる方向に変位可能に取り付けられており、その方向は通常は鉛直方向であり、本明細書ではＺ方向と称される。ボンディングヘッド１は、ボンディングヘッド本体２、並びにボンディングヘッド本体２に着脱可能に固定されている加熱及び冷却可能な吸引部材３を含む。 A semiconductor mounting apparatus includes a pick-and-place system that picks up semiconductor chips one after another and places them on a substrate. The pick and place system includes a bonding head 1. FIG. 1 schematically shows the part of the bonding head 1 necessary for understanding the invention. The bonding head 1 is attached to a pick-and-place system so as to be displaceable in a direction extending perpendicularly to the surface of the substrate. The direction is usually a vertical direction, and is referred to as a Z direction in this specification. . The bonding head 1 includes a bonding head main body 2 and a suction member 3 that is detachably fixed to the bonding head main body 2 and that can be heated and cooled.
吸引部材３は、互いに反対側にあるとともに互いに対して平行に延びる底面４及び上面５を有する。ボンディングヘッド本体２は、吸引部材３の上面５が当接する底面６を有する。ボンディングヘッド本体２の底面６又は吸引部材３の上面５には、１つ又は複数の第１のリセス７が設けられており、第１のリセスには第１の流路（単数又は複数）８が開口しており、これらの第１の流路には、底面６に当接する吸引部材３を吸引してしっかりと保持するために真空を供給することができる。 The suction member 3 has a bottom surface 4 and a top surface 5 that are opposite to each other and extend parallel to each other. The bonding head body 2 has a bottom surface 6 with which the top surface 5 of the suction member 3 abuts. One or a plurality of first recesses 7 are provided on the bottom surface 6 of the bonding head main body 2 or the top surface 5 of the suction member 3, and a first flow path (single or plural) 8 is provided in the first recess. These first flow paths can be supplied with a vacuum in order to suck and hold the suction member 3 in contact with the bottom surface 6 firmly.
図２は、吸引部材３の底面４を示している。底面４は、（図示のような）１つの凹部又はより多くの凹部９を有する。ボンディングヘッド本体２及び吸引部材３は、上記１つ又は複数の凹部９に開口しているとともに半導体チップ１１を吸引するために真空を供給することができる少なくとも１つの第２の流路１０を含む。凹部（単数又は複数）９によって全体的に覆われている底面４の表面積は、半導体チップ１１を吸引する吸引領域を形成し、一方で、凹部（単数又は複数）９によって覆われていない底面４の表面積は、加熱中の熱の伝達、又は半導体チップ１１の冷却中の熱の消失を可能にする。表面積のこれらの２つの割合は、半導体チップ１１を一方では必要な力によって吸引することができ、他方では効率的に加熱及び冷却することができるようにそれらの比率に関して決定される。 FIG. 2 shows the bottom surface 4 of the suction member 3. The bottom surface 4 has one recess (as shown) or more recesses 9. The bonding head main body 2 and the suction member 3 include at least one second flow path 10 that is open to the one or more recesses 9 and can supply a vacuum to suck the semiconductor chip 11. . The surface area of the bottom surface 4 that is entirely covered by the recess (s) 9 forms a suction area for sucking the semiconductor chip 11, while the bottom surface 4 that is not covered by the recess (s) 9. The surface area of this allows the transfer of heat during heating or the dissipation of heat during cooling of the semiconductor chip 11. These two proportions of surface area are determined with respect to their proportions so that the semiconductor chip 11 can be sucked on the one hand with the required force and on the other hand can be efficiently heated and cooled.
吸引部材３は、側壁１５に開口しているか又は好ましくは吸引部材３の上面５に開口している入口１３及び出口１４をそれぞれ有する１つ又は複数の冷却流路１２を含む。ボンディングヘッド本体２の底面６には、１つ又は複数の第２の凹部１６、及び１つ又は複数の第３の凹部１７が形成されている。ボンディングヘッド本体２は、上記１つ又は複数の第２の凹部１６に開口している第３の流路（単数又は複数）１８、及び、上記１つ又は複数の第３の凹部１７に開口している第４の流路（単数又は複数）１９を含む。吸引部材３がボンディングヘッド本体２の底面６に当接すると、上記１つ又は複数の凹部１６は冷却流路１２の入口１３に接続する１つ又は複数のキャビティを形成し、上記１つ又は複数の凹部１７は冷却流路１２の出口１４に接続する１つ又は複数のキャビティを形成する。吸引部材３はしたがって、冷却媒体を第３の流路（単数又は複数）１８を通して供給すること、及び冷却媒体を第４の流路（単数又は複数）１９を通して排出することによって冷却することができる。冷却媒体は、例えば第３の流路（単数又は複数）１８に供給され、その後、冷却流路１２を通って流れて第４の流路（単数又は複数）を介して周囲環境に排出される圧縮空気である。第３の流路（単数又は複数）１８及び第４の流路（単数又は複数）１９は、ガス状又は液体の冷却媒体が循環することができる閉冷却回路の一部であるものとすることもできる。 The suction member 3 includes one or more cooling channels 12 each having an inlet 13 and an outlet 14 opening in the side wall 15 or preferably opening in the upper surface 5 of the suction member 3. One or more second recesses 16 and one or more third recesses 17 are formed on the bottom surface 6 of the bonding head body 2. The bonding head body 2 opens to the third flow path (single or plural) 18 that opens to the one or more second recesses 16 and to the one or more third recesses 17. The fourth flow path (s) 19 is included. When the suction member 3 abuts against the bottom surface 6 of the bonding head body 2, the one or more recesses 16 form one or more cavities connected to the inlet 13 of the cooling flow path 12, and the one or more recesses 16. The recess 17 forms one or more cavities that connect to the outlet 14 of the cooling channel 12. The suction member 3 can thus be cooled by supplying the cooling medium through the third flow path (s) 18 and discharging the cooling medium through the fourth flow path (s) 19. . The cooling medium is supplied to, for example, the third flow path (s) 18, then flows through the cooling flow path 12 and is discharged to the surrounding environment via the fourth flow path (s). Compressed air. The third channel (s) 18 and the fourth channel (s) 19 shall be part of a closed cooling circuit through which a gaseous or liquid cooling medium can circulate. You can also.
吸引部材３は、吸引部材３に一体化されている電気抵抗加熱２０及び温度センサー２１を更に含む。温度センサー２１は好ましくは温度に依存する電気抵抗器であり、吸引部材３のその時点の温度を測定するのに用いられる。吸引部材３は、例えば本明細書において示されるような横方向に突出する突起２２を含み、突起の上面は吸引部材３の上面５よりも低く位置し、突起の底面は吸引部材３の底面４よりも高く位置する。突起２２の上面は、電気抵抗加熱２０に接続されている２つの第１の電気接触領域２３、及び温度センサー２１を形成する温度に依存する電気抵抗器に接続されている２つの第２の電気接触領域２４を含む。電気接触領域は、吸引部材３の上面５及び／又は側壁１５に一体化することもできる。 The suction member 3 further includes an electric resistance heating 20 and a temperature sensor 21 integrated with the suction member 3. The temperature sensor 21 is preferably a temperature-dependent electrical resistor and is used to measure the current temperature of the suction member 3. The suction member 3 includes, for example, a protrusion 22 that protrudes in the lateral direction as shown in this specification. The upper surface of the protrusion is positioned lower than the upper surface 5 of the suction member 3, and the bottom surface of the protrusion is the bottom surface 4 of the suction member 3. Located higher than. The top surface of the protrusion 22 has two first electrical contact areas 23 connected to the electrical resistance heating 20 and two second electrical connections connected to the temperature dependent electrical resistor forming the temperature sensor 21. A contact area 24 is included. The electrical contact area can also be integrated into the upper surface 5 and / or the side wall 15 of the suction member 3.
図３は吸引部材３の上面図を示している。この図は、上面５を、冷却流路１２の入口１３及び出口１４、並びに第１の電気接触領域２３及び第２の電気接触領域２４とともに示している。 FIG. 3 shows a top view of the suction member 3. This figure shows the top surface 5 with the inlet 13 and outlet 14 of the cooling channel 12, as well as the first electrical contact area 23 and the second electrical contact area 24.
（図示のような）接触ピン又はブラケット等のような電気接触素子２５がボンディングヘッド本体２に取り付けられており、この接触素子は好ましくは弾性的に実装され、抵抗加熱の動作及び温度センサー２１の動作に必要な電流を供給する制御ユニットに電気的に接続されている。吸引部材３がボンディングヘッド本体２の底面６に対して吸引されると、電気接触素子２５は接触領域２３及び２４に接触し、それによって、電気抵抗加熱２０及び温度センサー２１への電気的な接続が生じる。 An electrical contact element 25, such as a contact pin or bracket (as shown), is attached to the bonding head body 2, and this contact element is preferably mounted elastically to operate the resistance heating and temperature sensor 21. It is electrically connected to a control unit that supplies the current required for operation. When the suction member 3 is sucked against the bottom surface 6 of the bonding head body 2, the electric contact element 25 comes into contact with the contact regions 23 and 24, thereby making an electrical connection to the electric resistance heating 20 and the temperature sensor 21. Occurs.
冷却流路１２は好ましくは吸引部材３の上面５の真下に配置される。電気抵抗加熱２０は好ましくは冷却流路１２の下に配置されるが、冷却流路１２の上、すなわち、冷却流路１２と上面５との間に配置することもできる。温度センサー２１は好ましくは吸引部材３の底面４の真上に配置されるが、吸引部材３の別の位置に位置決めすることもできる。吸引部材３は焼結セラミック材料の単一片からなる。例えば、セラミック材料、抵抗加熱２０及び温度センサー２１の幾つかの層が所望の順で互いに上下に積み重ねられ、次に、吸引部材３を形成する１つの単一のセラミック素子が製造されるよう一緒に焼結されるように、製造が行われる。 The cooling channel 12 is preferably arranged directly below the upper surface 5 of the suction member 3. The electrical resistance heating 20 is preferably arranged below the cooling channel 12, but can also be arranged above the cooling channel 12, ie between the cooling channel 12 and the upper surface 5. The temperature sensor 21 is preferably arranged directly above the bottom surface 4 of the suction member 3, but can also be positioned at another position of the suction member 3. The suction member 3 consists of a single piece of sintered ceramic material. For example, several layers of ceramic material, resistance heating 20 and temperature sensor 21 are stacked one on top of the other in the desired order, and then together a single ceramic element forming the suction member 3 is manufactured. Manufacture is carried out so that it is sintered.
本発明によるボンディングヘッド１は、吸引部材３の加熱、冷却及び温度の監視に必要な素子が全て吸引部材３に一体化されており、ボンディングヘッド本体２が吸引部材３に電力及び冷却媒体を供給するのに必要な素子しか含まないことを特徴とする。さらに、上記素子の配置及び構成は、他方では、吸引部材３が平坦であり、すなわち底面４と上面５との間の距離Ａが最大幅Ｂ、すなわち（突起２２を考慮しない）相互に対向する側壁１５間の最大距離よりも明らかに小さいようになされる。一体化された電気抵抗加熱２０及び一体化された温度センサー２１を有する焼結セラミック材料の単一片からなる吸引部材３のコンパクトな構成は、一方では吸引部材３の非常に低い熱質量につながり、他方では、加熱も冷却も、熱伝達を妨げる表面によって半導体チップ１１から分離されず、この分離は、抵抗加熱２０及び／又は冷却流路１２がボンディングヘッド本体２に一体化される場合には当てはまる。 In the bonding head 1 according to the present invention, all elements necessary for heating, cooling and temperature monitoring of the suction member 3 are integrated into the suction member 3, and the bonding head body 2 supplies power and a cooling medium to the suction member 3. It is characterized in that it contains only the elements necessary for this. Further, in the arrangement and configuration of the elements, on the other hand, the suction member 3 is flat, that is, the distance A between the bottom surface 4 and the top surface 5 is the maximum width B, that is, they are opposed to each other (not considering the protrusion 22). It is made clearly smaller than the maximum distance between the side walls 15. The compact construction of the suction member 3 consisting of a single piece of sintered ceramic material with an integrated electrical resistance heating 20 and an integrated temperature sensor 21 leads to a very low thermal mass of the suction member 3 on the one hand, On the other hand, neither heating nor cooling is separated from the semiconductor chip 11 by the surface that impedes heat transfer, this separation being true when the resistance heating 20 and / or the cooling channel 12 is integrated into the bonding head body 2. .
冷却流路１２は好ましくは、吸引部材３の上面５に平行に延びる１つの単一の平面にのみ配置され、互いに上下に位置する複数の平面には配置されない。冷却流路１２はこの構成では低い高さしか形成せず、それによって、吸引部材３の平坦な構造が得られる。平坦な構造は全体的な高さが低いことを意味する。 The cooling flow path 12 is preferably disposed only on one single plane extending in parallel with the upper surface 5 of the suction member 3 and is not disposed on a plurality of planes positioned above and below each other. The cooling channel 12 only forms a low height in this configuration, whereby a flat structure of the suction member 3 is obtained. A flat structure means that the overall height is low.
冷却のために圧縮空気又は不活性ガスが提供される実施形態の場合、第４の流路（単数又は複数）１９は好ましくは、図示のように、吸引部材３の底面４に対して斜めに延びる方向に延び、周囲環境に開口する。第４の流路（単数又は複数）１９の出口開口はしたがって、吸引部材３の底面４から、第４の流路（単数又は複数）１９の入口開口よりも更に離れている。放出される圧縮空気はしたがって、上方方向へ流れ出ることで、放出される圧縮空気が、基板への接続部が完全には固化していない既に実装された半導体チップを変位させるか若しくは吹き飛ばすか、又は、接着剤でコーティングされているが半導体チップがまだ配置されていない隣接する基板の位置の場合に接着剤が押し流される可能性を低減する。 For embodiments where compressed air or inert gas is provided for cooling, the fourth channel (s) 19 is preferably oblique to the bottom surface 4 of the suction member 3 as shown. It extends in the extending direction and opens to the surrounding environment. The outlet opening of the fourth channel (s) 19 is therefore further away from the bottom surface 4 of the suction member 3 than the inlet opening of the fourth channel (s) 19. The released compressed air therefore flows upwards, so that the released compressed air displaces or blows off the already mounted semiconductor chip whose connection to the substrate is not completely solidified, or , Reducing the likelihood of the adhesive being washed away in the case of adjacent substrate locations that are coated with adhesive but where the semiconductor chip is not yet placed.
吸引部材３は、ボンディングヘッド本体２に着脱可能に固定されるか又は真空によってボンディングヘッド本体２に対して保持されるため、半導体実装装置を様々なサイズの半導体チップに合わせて調整するために容易かつ自動的に交換することができる。 The suction member 3 is detachably fixed to the bonding head main body 2 or is held with respect to the bonding head main body 2 by a vacuum, so that it is easy to adjust the semiconductor mounting apparatus according to various sizes of semiconductor chips. And can be replaced automatically.
本発明の実施形態及び適用を図示し説明したが、本開示の利益を得る当業者には、本明細書における本発明の概念から逸脱することなく上述したものよりも多くの変更形態が可能であることが明らかであろう。本発明はしたがって、添付の特許請求の範囲の主旨及びそれらの均等物を除いて限定されるべきではない。
While embodiments and applications of the present invention have been illustrated and described, those skilled in the art having the benefit of this disclosure may make more modifications than those described above without departing from the inventive concepts herein. It will be clear that there is. Accordingly, the invention is not to be restricted except in the spirit of the appended claims and their equivalents.
Claims (6)
ボンディングヘッド本体（２）、及び
焼結セラミック材料の単一片からなるとともに互いに反対側にある底面（４）及び上面（５）と、第1の接触領域（２３）及び第２の接触領域（２４）と、を有し、前記ボンディングヘッド（１）に対して真空によって着脱可能に保持することができる平坦な吸引部材（３）を備え、
前記吸引部材（３）では：
前記底面（４）には少なくとも１つの凹部（９）が形成されており、
１つ又は複数の冷却流路（１２）が前記上面（５）の下に設けられており、前記１つ又は複数の冷却流路（１２）は入口（１３）及び出口（１４）を有し、
電気抵抗加熱（２０）が前記１つ又は複数の冷却流路（１２）の下又は上に配置されており、
温度センサー（２１）が一体化されており、前記電気抵抗加熱（２０）は第１の接触領域（２３）に接続されており、前記温度センサー（２１）は第２の接触領域（２４）に接続されており；
前記ボンディングヘッド本体（２）の底面（６）又は前記吸引部材（３）の前記上面（５）は１つ又は複数の凹部（７）を有し、前記ボンディングヘッド本体（２）は、前記１つ又は複数の凹部（７）に開口しているとともに前記吸引部材（３）を吸引するための真空を供給することができる１つ又は複数の第１の流路（８）を有し、
前記ボンディングヘッド本体（２）及び前記吸引部材（３）は、前記吸引部材（３）の前記底面（４）の前記少なくとも１つの凹部（９）に開口しているとともに半導体チップ（１１）を吸引するための真空を供給することができる少なくとも１つの第２の流路（１０）を有し；
前記ボンディングヘッド本体（２）は、前記１つ又は複数の冷却流路（１２）の前記入口（１３）と連通接続している１つ又は複数の第３の流路（１８）、及び前記１つ又は複数の冷却流路（１２）の前記出口（１４）と連通接続している１つ又は複数の第４の流路（１９）を有し、
接触素子（２５）が前記ボンディングヘッド本体（２）に取り付けられており、前記接触素子（２５）は、前記吸引部材（３）が吸引されると上方に移動することにより、前記第１の接触領域（２３）及び前記第２の接触領域（２４）に接触し、それによって、前記吸引部材（３）は、前記電気抵抗加熱（２０）によって加熱することができ、冷却媒体を前記１つ又は複数の第３の流路（１８）を通して供給するとともに前記冷却媒体を前記１つ又は複数の第４の流路（１９）を通して排出することによって冷却することができ、また、前記温度センサー（２１）によって測定された温度を制御ユニットに送信することができる、ボンディングヘッド。 A bonding head (1),
A bonding head body (2), a bottom surface (4) and a top surface (5) made of a single piece of sintered ceramic material and opposite to each other ; a first contact area (23) and a second contact area (24 ) and, have a, with a flat suction member which can be removably held by a vacuum (3) to said bonding head (1),
In the suction member (3):
At least one recess (9) is formed in the bottom surface (4),
One or more cooling channels (12) are provided below the top surface (5), the one or more cooling channels ( 12 ) having an inlet (13) and an outlet (14). ,
Electrical resistance heating (20) is disposed below or above the one or more cooling channels (12);
Temperature sensor (21) are integrated, the electrical resistance heating (20) is connected to the first contact area (23), said temperature sensor (21) to the second contact area (24) Connected;
The bottom surface (6) of the bonding head body (2) or the upper surface (5) of the suction member (3) has one or a plurality of recesses (7), and the bonding head body (2) One or more first flow paths (8) that open to one or more recesses (7) and can supply a vacuum for sucking the suction member (3),
The bonding head body (2) and said suction member (3) is aspirated semiconductor chip (11) with being the opening in at least one recess (9) of the bottom (4) of the suction member (3) Having at least one second flow path (10) capable of supplying a vacuum to
The bonding head body (2) includes one or more third flow paths (18) in communication with the inlet (13) of the one or more cooling flow paths (12), and the 1 One or more fourth channels (19) in communication with the outlet (14) of one or more cooling channels (12);
Contact element (25) is attached to the bonding head body (2), said contact element (25), by said suction member (3) is moved when it is sucked upwards, the contact of the first region (23) and in contact with the second contact region (24), whereby said suction member (3), the can be heated by electrical resistance heating (20), a cooling medium, wherein the one or Cooling can be achieved by supplying through a plurality of third flow paths (18) and exhausting the cooling medium through the one or more fourth flow paths (19), and also by the temperature sensor (21 The bonding head which can send the temperature measured by) to the control unit.
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| Application Number | Priority Date | Filing Date | Title |
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| CH00245/13A CH707480B1 (en) | 2013-01-21 | 2013-01-21 | Bonding head with a heating and cooling suction device. |
| CH00245/13 | 2013-01-21 |
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| JP (1) | JP6350932B2 (en) |
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| TWI582881B (en) | 2017-05-11 |
| KR20140094458A (en) | 2014-07-30 |
| KR102228798B1 (en) | 2021-03-17 |
| JP2014140032A (en) | 2014-07-31 |
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