JP6341680B2 - 集束イオン・ビームの低ｋＶ強化 - Google Patents

集束イオン・ビームの低ｋＶ強化 Download PDF

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Publication number
JP6341680B2
JP6341680B2 JP2014023442A JP2014023442A JP6341680B2 JP 6341680 B2 JP6341680 B2 JP 6341680B2 JP 2014023442 A JP2014023442 A JP 2014023442A JP 2014023442 A JP2014023442 A JP 2014023442A JP 6341680 B2 JP6341680 B2 JP 6341680B2
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charged particle
particle beam
column
bias voltage
booster tube
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Japanese (ja)
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JP2014165174A5 (OSRAM
JP2014165174A (ja
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モスタファ・マーゾウス
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エフ・イ−・アイ・カンパニー
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/07—Eliminating deleterious effects due to thermal effects or electric or magnetic fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H01J3/026—Eliminating deleterious effects due to thermal effects, electric or magnetic field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H01J37/1474—Scanning means
    • H01J37/1477—Scanning means electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/21—Means for adjusting the focus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/248—Components associated with high voltage supply
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/047—Changing particle velocity
    • H01J2237/0473—Changing particle velocity accelerating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/047—Changing particle velocity
    • H01J2237/0473—Changing particle velocity accelerating
    • H01J2237/04735—Changing particle velocity accelerating with electrostatic means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/047—Changing particle velocity
    • H01J2237/0475—Changing particle velocity decelerating
    • H01J2237/04756—Changing particle velocity decelerating with electrostatic means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/151—Electrostatic means
    • H01J2237/1518—Electrostatic means for X-Y scanning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153—Correcting image defects, e.g. stigmators
    • H01J2237/1534—Aberrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31749—Focused ion beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Electron Beam Exposure (AREA)
JP2014023442A 2013-02-27 2014-02-10 集束イオン・ビームの低ｋＶ強化 Active JP6341680B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/779,142 US8933414B2 (en) 2013-02-27 2013-02-27 Focused ion beam low kV enhancement
US13/779,142 2013-02-27

Publications (3)

Publication Number Publication Date
JP2014165174A JP2014165174A (ja) 2014-09-08
JP2014165174A5 JP2014165174A5 (OSRAM) 2017-04-27
JP6341680B2 true JP6341680B2 (ja) 2018-06-13

Family

ID=50151208

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014023442A Active JP6341680B2 (ja) 2013-02-27 2014-02-10 集束イオン・ビームの低ｋＶ強化

Country Status (4)

Country Link
US (3) US8933414B2 (OSRAM)
EP (1) EP2772930B1 (OSRAM)
JP (1) JP6341680B2 (OSRAM)
CN (1) CN104008943B (OSRAM)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8933414B2 (en) * 2013-02-27 2015-01-13 Fei Company Focused ion beam low kV enhancement
US9666407B2 (en) * 2015-02-25 2017-05-30 Industry-University Cooperation Foundation Sunmoon University Electrostatic quadrupole deflector for microcolumn
JP2019003863A (ja) * 2017-06-16 2019-01-10 株式会社島津製作所 電子ビーム装置、ならびに、これを備えるｘ線発生装置および走査電子顕微鏡
CN109633359B (zh) * 2019-01-10 2021-05-28 许继电源有限公司 一种三母线中单母线接地绝缘监测方法和监测装置
JP7154593B2 (ja) * 2019-02-15 2022-10-18 株式会社日立ハイテクサイエンス 複合荷電粒子ビーム装置、及び制御方法
JP7308582B2 (ja) * 2019-10-18 2023-07-14 株式会社日立ハイテクサイエンス 集束イオンビーム装置、及び集束イオンビーム装置の制御方法
JP7308581B2 (ja) * 2019-10-18 2023-07-14 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置、複合荷電粒子ビーム装置、及び荷電粒子ビーム装置の制御方法
CN112713070B (zh) * 2019-10-25 2022-10-18 中国电子科技集团公司第四十八研究所 一种真空机械扫描装置
DE102019133658A1 (de) * 2019-12-10 2021-06-10 Carl Zeiss Smt Gmbh Vorrichtung und Verfahren zum Bearbeiten einer mikrostrukturierten Komponente
JP7496601B2 (ja) * 2020-06-29 2024-06-07 株式会社ブイ・テクノロジー 加工装置
US11887810B2 (en) 2022-04-20 2024-01-30 Applied Materials Israel Ltd. Reduced charging by low negative voltage in FIB systems

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0617103U (ja) * 1992-08-07 1994-03-04 日新電機株式会社 低エネルギーイオン銃の真空排気装置
US5393985A (en) * 1992-11-26 1995-02-28 Shimadzu Corporation Apparatus for focusing an ion beam
JP2945952B2 (ja) * 1995-03-06 1999-09-06 科学技術庁金属材料技術研究所長 減速集束イオンビーム堆積装置
JP2000133185A (ja) * 1998-10-30 2000-05-12 Nikon Corp 偏向器及びそれを用いた荷電粒子線装置
US7601953B2 (en) * 2006-03-20 2009-10-13 Alis Corporation Systems and methods for a gas field ion microscope
JP2006114225A (ja) * 2004-10-12 2006-04-27 Hitachi High-Technologies Corp 荷電粒子線装置
US7897918B2 (en) * 2004-11-15 2011-03-01 DCG Systems System and method for focused ion beam data analysis
EP1703537B9 (en) * 2005-03-17 2008-10-22 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Analysing system and charged particle beam device
KR101384260B1 (ko) * 2005-12-05 2014-04-11 전자빔기술센터 주식회사 전자칼럼의 전자빔 포커싱 방법
EP1826809A1 (en) * 2006-02-22 2007-08-29 FEI Company Particle-optical apparatus equipped with a gas ion source
JP2010519697A (ja) * 2007-02-22 2010-06-03 アプライド マテリアルズ イスラエル リミテッド 高スループットｓｅｍツール
US8314404B2 (en) * 2009-09-18 2012-11-20 Fei Company Distributed ion source acceleration column
US8227752B1 (en) * 2011-02-17 2012-07-24 Carl Zeiss Nts Gmbh Method of operating a scanning electron microscope
EP2444990B1 (en) * 2010-10-19 2014-06-25 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Simplified particle emitter and method of operating thereof
JP5438161B2 (ja) * 2012-04-13 2014-03-12 株式会社アドバンテスト Ｄａ変換装置
US8742361B2 (en) * 2012-06-07 2014-06-03 Fei Company Focused charged particle column for operation at different beam energies at a target
US8933414B2 (en) * 2013-02-27 2015-01-13 Fei Company Focused ion beam low kV enhancement

Also Published As

Publication number Publication date
EP2772930A2 (en) 2014-09-03
US8933414B2 (en) 2015-01-13
US9087672B2 (en) 2015-07-21
EP2772930A3 (en) 2017-04-19
US20150325403A1 (en) 2015-11-12
CN104008943B (zh) 2018-02-16
US9443692B2 (en) 2016-09-13
EP2772930B1 (en) 2018-07-04
US20150083929A1 (en) 2015-03-26
JP2014165174A (ja) 2014-09-08
CN104008943A (zh) 2014-08-27
US20140239175A1 (en) 2014-08-28

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