JP6326443B2 - 黄色フィルタユニットを有するイメージセンサー - Google Patents
黄色フィルタユニットを有するイメージセンサー Download PDFInfo
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- JP6326443B2 JP6326443B2 JP2016070958A JP2016070958A JP6326443B2 JP 6326443 B2 JP6326443 B2 JP 6326443B2 JP 2016070958 A JP2016070958 A JP 2016070958A JP 2016070958 A JP2016070958 A JP 2016070958A JP 6326443 B2 JP6326443 B2 JP 6326443B2
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- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/0205—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows
- G01J3/0237—Adjustable, e.g. focussing
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
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- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/0205—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows
- G01J3/0224—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows using polarising or depolarising elements
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/12—Generating the spectrum; Monochromators
- G01J3/18—Generating the spectrum; Monochromators using diffraction elements, e.g. grating
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/30—Measuring the intensity of spectral lines directly on the spectrum itself
- G01J3/36—Investigating two or more bands of a spectrum by separate detectors
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- G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
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- G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
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- G02B6/29379—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means characterised by the function or use of the complete device
- G02B6/29395—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means characterised by the function or use of the complete device configurable, e.g. tunable or reconfigurable
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- G—PHYSICS
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
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- G02B6/26—Optical coupling means
- G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
- G02B6/293—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
- G02B6/29379—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means characterised by the function or use of the complete device
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
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- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
- H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
- H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
- H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
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- G—PHYSICS
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/12—Generating the spectrum; Monochromators
- G01J2003/1213—Filters in general, e.g. dichroic, band
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- Optics & Photonics (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Spectrometry And Color Measurement (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Optical Filters (AREA)
Description
10…検知層
11…基板
12…検知ユニット
12a、12b、12c…検知ユニット
13…パッシベーション層
20…フィルタユニット
20a…黄色フィルタユニット
20b…緑色フィルタユニット
20c…青色フィルタユニット
20d…透明フィルタユニット
30…マイクロレンズ
40…プロセスモジュール
P1…基準面
E1…画素グループ
E2、E21、E22、E23、E24、E25、E26、E27…カラーグループ
IR…赤色光成分
Clear…透明フィルタユニット
Claims (13)
- 複数のノーマルセンサーユニット、および、複数の分光計センサーユニットを有するセンサーアレイと、
第1格子ピッチを有し、前記センサーアレイ層上に設置されて、N個 (Nは正の整数)の前記分光計センサーユニットを被覆する第1導波モード共鳴 (以下、GMRと称す)構造と、
第2格子ピッチを有し、前記センサーアレイ層上に設置されて、N個の前記分光計センサーユニットを被覆する第2GMR構造と、
前記センサーアレイ層上に設置されて、前記ノーマルセンサーユニットを被覆する複数のカラーフィルターユニットと、
前記第1GMR構造及び前記第2GMR構造上に配置され、第1方向の光線を偏光させる第1偏光子を備え、
前記第1GMR構造と前記第2GMR構造の各格子は、前記第1方向に垂直である第2方向に平行な格子であるイメージセンサー。 - 格子を有さない構造であって、前記センサーアレイ層上に設置されて、N個の前記分光計センサーユニットを被覆するクリア構造を備え、
前記第1GMR構造、前記第2GMR構造、および、前記クリア構造は、幅1.1〜4.4μm、長さ1.1〜4.4μmの長方形領域をそれぞれ占有する請求項1に記載のイメージセンサー。 - 前記第1GMR構造は、前記第1格子ピッチの第1格子領域、および、格子がない第1クリア領域に分割され、
前記第2GMR構造は、前記第2格子ピッチの第2格子領域、および、格子がない第2クリア領域に分割される
請求項1に記載のイメージセンサー。 - 前記第1クリア領域は、前記第1格子領域の1辺側に配置され、前記第2クリア領域は、前記第2格子領域の1辺側に配置される
請求項3に記載のイメージセンサー。 - 前記第1クリア領域は前記第1格子領域を取り囲み、
前記第2クリア領域は前記第2格子領域を取り囲む
請求項3に記載のイメージセンサー。 - 前記第1偏光子は前記クリア構造上に配置される請求項2に記載のイメージセンサー。
- 前記第1格子ピッチを有し、前記センサーアレイ層上に設けられ、N個の前記分光計センサーユニットを被覆する第3GMR構造と、
前記第2格子ピッチを有し、前記センサーアレイ層上に設けられ、N個の前記分光計センサーユニットを被覆する第4GMR構造と、
格子を有さない構造であり、前記センサーアレイ層上に設置されて、N個の前記分光計センサーユニットを被覆する第2クリア構造と、
前記第3GMR構造、前記第4GMR構造、および、前記第2クリア構造上に配置され、前記第2方向の光線を偏光させる第2偏光子とを備え、
前記第3GMR構造と前記第4GMR構造の各格子は、前記第1方向に平行な格子である
請求項6に記載のイメージセンサー。 - 前記第1GMR構造は第1信号を測定する構造であり、前記第2GMR構造は第2信号を測定する構造であり、前記クリア構造は参照信号を測定する構造であり、
前記第1信号と前記参照信号との間の差異、および、前記第2信号と前記参照信号との間の差異により、測定スペクトルを形成することを特徴とする請求項2に記載のイメージセンサー。 - 前記第1格子ピッチの第3格子領域、および、格子がない第3クリア領域に分割された構造であり、前記センサーアレイ層上に設けられ、N個の前記分光計センサーユニットを被覆する第3GMR構造と、
前記第2格子ピッチの第4格子領域、および、格子がない第4クリア領域に分割された構造であり、前記センサーアレイ層上に設けられ、N個の前記分光計センサーユニットを被覆する第4GMR構造と、
前記第3GMR構造と前記第4GMR構造上に配置され、前記第2方向の光線を偏光させる第2偏光子とを備え、
前記第3格子領域と前記第4格子領域の前記格子は、前記第1方向に平行な格子であることを特徴とする請求項3に記載のイメージセンサー。 - 前記第1GMR構造と前記第2GMR構造は、
誘電体膜上に設置される導波路層、
前記導波路層上に設置される格子層、および、
前記格子層上に設置されるクラッド層をそれぞれ有し、
前記導波路層と前記格子層の屈折率は、前記誘電体膜と前記クラッド層の屈折率より大きい
請求項1に記載のイメージセンサー。 - 前記第1GMR構造と前記センサーアレイ層との間、および、前記第2GMR構造と前記センサーアレイ層との間に高熱伝導材料を備え、
前記第1GMR構造の前記第1格子ピッチ、および、前記第2GMR構造の前記第2格子ピッチは、前記高熱伝導材料を介して前記第1GMR構造と前記第2GMR構造を加熱又は冷却することにより変化する
請求項1に記載のイメージセンサー。 - 前記第1GMR構造と前記センサーアレイ層との間、および、前記第2GMR構造と前記センサーアレイ層との間に設けられる圧電材料を備え、
前記第1GMR構造の前記第1格子ピッチ、および、前記第2GMR構造の前記第2格子ピッチは、前記圧電材料に供給される電圧を変化させることにより変化する
請求項1に記載のイメージセンサー。 - 前記第1GMR構造と前記第2GMR構造は圧電材料で形成され、
前記第1GMR構造の前記第1格子ピッチ、および、前記第2GMR構造の前記第2格子ピッチは、前記圧電材料に供給される電圧を変化させることにより変化する
請求項1に記載のイメージセンサー。
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Application Number | Priority Date | Filing Date | Title |
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US14/959,928 US9876995B2 (en) | 2015-12-04 | 2015-12-04 | Image sensor |
US14/959,928 | 2015-12-04 |
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JP6326443B2 true JP6326443B2 (ja) | 2018-05-16 |
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US11424279B2 (en) * | 2017-05-16 | 2022-08-23 | Sony Semiconductor Solutions Corporation | Imaging element and electronic device including imaging device |
US11719575B2 (en) | 2017-08-24 | 2023-08-08 | Tohoku University | Transmission guided-mode resonant grating integrated spectroscopy device and method for manufacturing same |
US10367020B2 (en) * | 2017-11-15 | 2019-07-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Polarizers for image sensor devices |
DE102018124442A1 (de) | 2017-11-15 | 2019-05-16 | Taiwan Semiconductor Manufacturing Co. Ltd. | Polarisatoren für Bildsensorvorrichtungen |
JP2019129178A (ja) * | 2018-01-22 | 2019-08-01 | ソニーセミコンダクタソリューションズ株式会社 | 半導体素子及び電子機器 |
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JP2002258199A (ja) | 2001-02-28 | 2002-09-11 | Harison Toshiba Lighting Corp | 光学走査装置、画像形成装置および画像読取装置 |
JP2005207890A (ja) | 2004-01-22 | 2005-08-04 | Nippon Soken Inc | 赤外線検出器 |
JP2008177191A (ja) | 2007-01-16 | 2008-07-31 | Matsushita Electric Ind Co Ltd | 固体撮像装置およびそれを用いたカメラ |
JP2010027875A (ja) | 2008-07-18 | 2010-02-04 | Panasonic Corp | 固体撮像素子 |
JP4770928B2 (ja) * | 2009-01-13 | 2011-09-14 | ソニー株式会社 | 光学素子および固体撮像素子 |
JP5121764B2 (ja) | 2009-03-24 | 2013-01-16 | 株式会社東芝 | 固体撮像装置 |
JP5428509B2 (ja) * | 2009-05-11 | 2014-02-26 | ソニー株式会社 | 2次元固体撮像装置、及び、2次元固体撮像装置における偏光光データ処理方法 |
TWI530711B (zh) * | 2010-07-12 | 2016-04-21 | 前街投資管理公司管理之前街公司多元收益級別 | 用於產生三維影像資訊之方法和設備 |
JP2012059865A (ja) * | 2010-09-08 | 2012-03-22 | Sony Corp | 撮像素子および撮像装置 |
JP2012151421A (ja) | 2011-01-21 | 2012-08-09 | Ricoh Co Ltd | イメージセンシング装置 |
JP5760811B2 (ja) * | 2011-07-28 | 2015-08-12 | ソニー株式会社 | 固体撮像素子および撮像システム |
JP2013138055A (ja) | 2011-12-28 | 2013-07-11 | Hitachi High-Technologies Corp | 検査修正装置、検査修正方法およびファイバレーザ |
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