JP6321219B2 - 光起電装置及びその製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000000463 material Substances 0.000 claims description 39
- 238000000034 method Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 20
- 239000000758 substrate Substances 0.000 description 19
- 239000000975 dye Substances 0.000 description 14
- 230000000694 effects Effects 0.000 description 13
- 239000011787 zinc oxide Substances 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 9
- 238000003384 imaging method Methods 0.000 description 7
- 230000009102 absorption Effects 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 6
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- -1 2-ethylhexyl Chemical group 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 4
- 230000009022 nonlinear effect Effects 0.000 description 4
- 235000019592 roughness Nutrition 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000011669 selenium Substances 0.000 description 3
- 229910004613 CdTe Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000004040 coloring Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910052747 lanthanoid Inorganic materials 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 150000002910 rare earth metals Chemical class 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 229910001940 europium oxide Inorganic materials 0.000 description 1
- AEBZCFFCDTZXHP-UHFFFAOYSA-N europium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Eu+3].[Eu+3] AEBZCFFCDTZXHP-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 230000009021 linear effect Effects 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009103 reabsorption Effects 0.000 description 1
- PYWVYCXTNDRMGF-UHFFFAOYSA-N rhodamine B Chemical compound [Cl-].C=12C=CC(=[N+](CC)CC)C=C2OC2=CC(N(CC)CC)=CC=C2C=1C1=CC=CC=C1C(O)=O PYWVYCXTNDRMGF-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000004054 semiconductor nanocrystal Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical compound [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/055—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Photovoltaic Devices (AREA)
Description
−互いに離隔された複数の光起電セルと、
−前記セルを受容する支持体と、
−前記セルに接触し、前記セルに近接する表面を有する第1のガイドを備える導光板であって、前記近接表面が、前記セル及び前記支持体に対して配向する、導光板と、
を備える光起電装置を対象とする。
−互いに離隔される複数の光起電セルと、
−前記セルが付近に置かれる支持体と、
−前記光起電セルに接触し、前記セルに近接する表面を有する第1のガイドを備える導光板であって、前記近接表面が、前記セル及び前記支持体に対して配向される、導光板と、
を備える光起電装置の製造方法に関する。
−前記光起電セルは、前記支持体の付近に配され、
−前記セルの間に、前記第1のガイドと前記支持体との間に位置し、前記近接表面の屈折率より低い屈折率を有する材料を含む領域を配することによって、前記導光板が、前記光起電セルに接触して配され、前記材料は、前記近接表面に接触して配される。
4 基板
6 支持体
8 光起電セル
10 導光板
12 キャビティ
14 反射表面
16 上部表面
18 第1のガイド
20 第2のガイド
22 近接表面
23 領域
24 材料
Claims (16)
- 互いに離隔された複数の光起電セルと、
前記セルを受容する支持体と、
前記セルの近位にある表面を有する第1のガイドを備え、前記セルに接触する導光板であって、前記近位にある表面が、前記セル及び前記支持体に対して配向する、導光板と、
を備える光起電装置であって、
前記光起電装置が、前記複数の光起電セルの間に、前記支持体と前記第1のガイドとの間に位置する、前記近位にある表面の屈折率より小さい屈折率を有する材料を含む領域を備え、前記材料が、前記近位にある表面に接触する、光起電装置。 - 前記支持体が、前記第1のガイドの近位にある表面に対して配向された反射表面を有する反射体であることを特徴とする、請求項1に記載の光起電装置。
- 前記第1のガイドが蛍光集光器であることを特徴とする、請求項1に記載の光起電装置。
- 前記支持体及び前記第1のガイドの近位にある表面が、1μmから20μmの距離だけ離隔されることを特徴とする、請求項1に記載の光起電装置。
- 前記近位にある表面及び前記支持体の間の距離が、2以上の前記第1のガイドの好ましい発光波長に相当する、前記装置の固有波長の倍数に実質的に等しいことを特徴とする、請求項4に記載の光起電装置。
- 1つ又はそれ以上の光起電セルが、前記第1のガイドに対して前記支持体から突出して配され、前記第1のガイドが、前記セルに接触し、少なくとも前記セルによって前記支持体から離隔されていることを特徴とする、請求項1に記載の装置。
- 前記材料が空気であることを特徴とする、請求項1に記載の光起電装置。
- 前記導光板が、前記材料によって互いに離隔される複数の第2のガイドを備え、第2のガイドの各々が、前記第1のガイドの近位にある表面と光起電セルとの間に置かれることを特徴とする、請求項1に記載の光起電装置。
- 前記第2のガイドによって、前記第1のガイドの近位にある表面が少なくとも前記領域において前記支持体から離されることを特徴とする、請求項8に記載の光起電装置。
- 第2のガイドの各々が、対応する光起電セルの前記表面に接触して配され、前記セルの表面の寸法に実質的に等しい寸法を有する表面を有し、所定の第2のガイドの前記表面が、前記対応する光起電セルの前記表面に実質的に端部間で面するように配されることを特徴とする、請求項8に記載の光起電装置。
- 前記第2のガイドの少なくとも1つが、ベース及び円柱の寸法が対応する光起電セルの前記表面の寸法に実質的に等しい略正角柱形状のパッドの形状を有することを特徴とする、請求項8に記載の光起電装置。
- 前記第2のガイドの1つ又は各々が、前記第1のガイドの屈折率と対応する光起電セルの表面の屈折率との間に含まれる屈折率を有することを特徴とする、請求項8に記載の光起電装置。
- 互いに離隔される複数の光起電セルと、
前記セルが付近に置かれる支持体と、
前記セルの近位にある表面を有する第1のガイドを備え、前記光起電セルに接触する導光板であって、前記近位にある表面が、前記セル及び前記支持体に対して配向される、導光板と、
を備える光起電装置の製造方法であって、
前記光起電セルが前記支持体の付近に配され、
前記複数の光起電セルの間に、前記第1のガイドと前記支持体との間に位置し、前記近位にある表面の屈折率より低い屈折率を有する材料を含む領域を配することによって、前記導光板が、前記光起電セルに接触して配され、前記材料が、前記近位にある表面に接触して配される、光起電装置の製造方法。 - 1つ又はそれ以上の透明な第2のガイドが得られ、その各々が、前記第1のガイドと1つの光起電セルとの間に置かれることを特徴とする、請求項13に記載の光起電装置の製造方法。
- 第2のガイドの各々が、対応する光起電セルに直接接触する堆積物によって形成されることを特徴とする、請求項14に記載の光起電装置の製造方法。
- 対応する光起電セルが前記支持体から突出するように前記光起電セルの全て又は一部が前記支持体の付近に堆積によって形成され、前記第1のガイドが前記突出するセルに接触して堆積されることを特徴とする、請求項13に記載の光起電装置の製造方法。
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FR1455122 | 2014-06-05 | ||
FR1455122A FR3022073B1 (fr) | 2014-06-05 | 2014-06-05 | Dispositif photovoltaique a concentrateur fluorescent et procede de fabrication associe |
PCT/FR2015/051460 WO2015185855A1 (fr) | 2014-06-05 | 2015-06-02 | Dispositif photovoltaïque et procédé de fabrication associé |
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JP2017517155A JP2017517155A (ja) | 2017-06-22 |
JP6321219B2 true JP6321219B2 (ja) | 2018-05-09 |
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US (1) | US10770611B2 (ja) |
EP (1) | EP3152787B1 (ja) |
JP (1) | JP6321219B2 (ja) |
CN (1) | CN106463560B (ja) |
FR (1) | FR3022073B1 (ja) |
WO (1) | WO2015185855A1 (ja) |
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US11677038B2 (en) * | 2011-05-28 | 2023-06-13 | Banpil Photonics, Inc. | Perpetual energy harvester and method of fabrication |
EP3857276A4 (en) * | 2018-09-24 | 2022-08-03 | Board Of Trustees Of Michigan State University | TRANSPARENT LUMINOUS SOLAR CONCENTRATOR |
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JP2013254854A (ja) * | 2012-06-07 | 2013-12-19 | Sharp Corp | 太陽電池モジュールおよび太陽光発電装置 |
CN102800730A (zh) * | 2012-07-09 | 2012-11-28 | 友达光电股份有限公司 | 光伏装置 |
JP5929578B2 (ja) * | 2012-07-13 | 2016-06-08 | 株式会社デンソー | 太陽電池モジュール及び太陽電池モジュール集合体 |
JP2015216138A (ja) * | 2012-09-10 | 2015-12-03 | シャープ株式会社 | 太陽電池モジュール及び太陽光発電装置 |
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US20180182910A1 (en) | 2018-06-28 |
FR3022073A1 (fr) | 2015-12-11 |
FR3022073B1 (fr) | 2018-02-23 |
US10770611B2 (en) | 2020-09-08 |
JP2017517155A (ja) | 2017-06-22 |
EP3152787B1 (fr) | 2021-08-18 |
CN106463560B (zh) | 2019-10-18 |
EP3152787A1 (fr) | 2017-04-12 |
WO2015185855A1 (fr) | 2015-12-10 |
CN106463560A (zh) | 2017-02-22 |
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