JP6318007B2 - データ処理方法、データ処理装置および処理装置 - Google Patents

データ処理方法、データ処理装置および処理装置 Download PDF

Info

Publication number
JP6318007B2
JP6318007B2 JP2014111875A JP2014111875A JP6318007B2 JP 6318007 B2 JP6318007 B2 JP 6318007B2 JP 2014111875 A JP2014111875 A JP 2014111875A JP 2014111875 A JP2014111875 A JP 2014111875A JP 6318007 B2 JP6318007 B2 JP 6318007B2
Authority
JP
Japan
Prior art keywords
data
predicted value
processing
value
smoothed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2014111875A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015128129A5 (enExample
JP2015128129A (ja
Inventor
渡辺　成一
成一 渡辺
智己 井上
智己 井上
茂 中元
茂 中元
功祐 福地
功祐 福地
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp filed Critical Hitachi High Technologies Corp
Priority to JP2014111875A priority Critical patent/JP6318007B2/ja
Priority to TW103122645A priority patent/TWI597794B/zh
Priority to KR1020140097409A priority patent/KR101646613B1/ko
Priority to US14/447,692 priority patent/US10073818B2/en
Publication of JP2015128129A publication Critical patent/JP2015128129A/ja
Priority to KR1020160066776A priority patent/KR101795523B1/ko
Publication of JP2015128129A5 publication Critical patent/JP2015128129A5/ja
Application granted granted Critical
Publication of JP6318007B2 publication Critical patent/JP6318007B2/ja
Priority to US16/053,158 priority patent/US10783220B2/en
Priority to US16/996,486 priority patent/US11308182B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
    • G06F17/10—Complex mathematical operations
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
    • G06F17/10—Complex mathematical operations
    • G06F17/11—Complex mathematical operations for solving equations, e.g. nonlinear equations, general mathematical optimization problems
    • G06F17/13—Differential equations
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
    • G06F17/10—Complex mathematical operations
    • G06F17/18—Complex mathematical operations for evaluating statistical data, e.g. average values, frequency distributions, probability functions, regression analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Data Mining & Analysis (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Analysis (AREA)
  • Pure & Applied Mathematics (AREA)
  • Computational Mathematics (AREA)
  • Mathematical Optimization (AREA)
  • General Engineering & Computer Science (AREA)
  • Software Systems (AREA)
  • Databases & Information Systems (AREA)
  • Algebra (AREA)
  • Operations Research (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Probability & Statistics with Applications (AREA)
  • Bioinformatics & Computational Biology (AREA)
  • Evolutionary Biology (AREA)
  • Bioinformatics & Cheminformatics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Management, Administration, Business Operations System, And Electronic Commerce (AREA)
JP2014111875A 2013-11-29 2014-05-30 データ処理方法、データ処理装置および処理装置 Active JP6318007B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2014111875A JP6318007B2 (ja) 2013-11-29 2014-05-30 データ処理方法、データ処理装置および処理装置
TW103122645A TWI597794B (zh) 2013-11-29 2014-07-01 Data processing method, data processing device and processing device
KR1020140097409A KR101646613B1 (ko) 2013-11-29 2014-07-30 데이터 처리 방법, 데이터 처리 장치 및 처리 장치
US14/447,692 US10073818B2 (en) 2013-11-29 2014-07-31 Data processing method, data processing apparatus and processing apparatus
KR1020160066776A KR101795523B1 (ko) 2013-11-29 2016-05-30 데이터 처리 방법
US16/053,158 US10783220B2 (en) 2013-11-29 2018-08-02 Data processing method, data processing apparatus and processing apparatus
US16/996,486 US11308182B2 (en) 2013-11-29 2020-08-18 Data processing method, data processing apparatus and processing apparatus

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013246891 2013-11-29
JP2013246891 2013-11-29
JP2014111875A JP6318007B2 (ja) 2013-11-29 2014-05-30 データ処理方法、データ処理装置および処理装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2017207735A Division JP6453421B2 (ja) 2013-11-29 2017-10-27 データ処理方法、データ処理装置および処理装置

Publications (3)

Publication Number Publication Date
JP2015128129A JP2015128129A (ja) 2015-07-09
JP2015128129A5 JP2015128129A5 (enExample) 2017-03-09
JP6318007B2 true JP6318007B2 (ja) 2018-04-25

Family

ID=53265456

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014111875A Active JP6318007B2 (ja) 2013-11-29 2014-05-30 データ処理方法、データ処理装置および処理装置

Country Status (4)

Country Link
US (3) US10073818B2 (enExample)
JP (1) JP6318007B2 (enExample)
KR (2) KR101646613B1 (enExample)
TW (1) TWI597794B (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10386828B2 (en) 2015-12-17 2019-08-20 Lam Research Corporation Methods and apparatuses for etch profile matching by surface kinetic model optimization
US9792393B2 (en) 2016-02-08 2017-10-17 Lam Research Corporation Methods and apparatuses for etch profile optimization by reflectance spectra matching and surface kinetic model optimization
US10032681B2 (en) 2016-03-02 2018-07-24 Lam Research Corporation Etch metric sensitivity for endpoint detection
US10197908B2 (en) 2016-06-21 2019-02-05 Lam Research Corporation Photoresist design layout pattern proximity correction through fast edge placement error prediction via a physics-based etch profile modeling framework
US10254641B2 (en) 2016-12-01 2019-04-09 Lam Research Corporation Layout pattern proximity correction through fast edge placement error prediction
US10534257B2 (en) 2017-05-01 2020-01-14 Lam Research Corporation Layout pattern proximity correction through edge placement error prediction
KR102092855B1 (ko) * 2018-02-14 2020-03-24 숭실대학교 산학협력단 수중 센서 네트워크를 이용한 자기장 기반의 물체 위치 추정 시스템 및 그 방법
US10572697B2 (en) 2018-04-06 2020-02-25 Lam Research Corporation Method of etch model calibration using optical scatterometry
KR20250078603A (ko) 2018-04-10 2025-06-02 램 리써치 코포레이션 레지스트 및 에칭 모델링
US11921433B2 (en) 2018-04-10 2024-03-05 Lam Research Corporation Optical metrology in machine learning to characterize features
US10794940B2 (en) 2018-07-02 2020-10-06 Lg Chem, Ltd. System for accurately determining an amount of electrical current flowing through a hall effect current sensor
US10977405B2 (en) 2019-01-29 2021-04-13 Lam Research Corporation Fill process optimization using feature scale modeling
CN111814106A (zh) * 2020-07-09 2020-10-23 平安科技（深圳）有限公司 时序数据滞后性处理方法、装置、电子设备及存储介质
KR102783719B1 (ko) * 2024-07-03 2025-03-18 한국해양과학기술원 빅데이터 기반의 조업어장 해양 쓰레기 발생량 예측 시스템 및 방법

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6153728A (ja) 1984-08-24 1986-03-17 Hitachi Ltd エツチング終点判定方法
US6197116B1 (en) * 1996-08-29 2001-03-06 Fujitsu Limited Plasma processing system
JPH10283335A (ja) * 1997-04-10 1998-10-23 Fuji Electric Co Ltd リカレントネットワークによる予測方法
JP3383236B2 (ja) * 1998-12-01 2003-03-04 株式会社日立製作所 エッチング終点判定方法及びエッチング終点判定装置
JP3884894B2 (ja) * 2000-03-01 2007-02-21 株式会社日立製作所 プラズマエッチング処理装置
TW492106B (en) * 2000-06-20 2002-06-21 Hitachi Ltd Inspection method for thickness of film to be processed using luminous beam-splitter and method of film processing
US6782297B2 (en) * 2001-05-24 2004-08-24 Eric Paul Tabor Methods and apparatus for data smoothing
US6903826B2 (en) * 2001-09-06 2005-06-07 Hitachi, Ltd. Method and apparatus for determining endpoint of semiconductor element fabricating process
JP2004110300A (ja) 2002-09-17 2004-04-08 Japan Research Institute Ltd データ予測方法、データ予測装置、コンピュータプログラム、及び記録媒体
US7020791B1 (en) * 2002-09-19 2006-03-28 Nortel Networks Limited Clock recovery using a double-exponential smoothing process
TWI246725B (en) 2002-10-31 2006-01-01 Tokyo Electron Ltd Method and apparatus for detecting endpoint
WO2007034482A2 (en) * 2005-09-20 2007-03-29 Sterna Technologies (2005) Ltd. A method and system for managing data and organizational constraints
JP4833687B2 (ja) * 2006-02-27 2011-12-07 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP4943716B2 (ja) 2006-03-01 2012-05-30 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP6553398B2 (ja) * 2015-05-12 2019-07-31 株式会社日立ハイテクノロジーズ プラズマ処理装置、データ処理装置およびデータ処理方法

Also Published As

Publication number Publication date
US10073818B2 (en) 2018-09-11
KR20160067074A (ko) 2016-06-13
US20180341625A1 (en) 2018-11-29
US20150154145A1 (en) 2015-06-04
US10783220B2 (en) 2020-09-22
KR20150062920A (ko) 2015-06-08
JP2015128129A (ja) 2015-07-09
KR101795523B1 (ko) 2017-11-08
TW201523759A (zh) 2015-06-16
US11308182B2 (en) 2022-04-19
TWI597794B (zh) 2017-09-01
KR101646613B1 (ko) 2016-08-08
US20200380066A1 (en) 2020-12-03

Similar Documents

Publication Publication Date Title
JP6318007B2 (ja) データ処理方法、データ処理装置および処理装置
US11605530B2 (en) Plasma processing apparatus, data processing apparatus and data processing method
JP4833687B2 (ja) プラズマ処理装置
JP6072613B2 (ja) プラズマ処理方法
JP2008218898A (ja) プラズマ処理装置
KR20030095936A (ko) 에칭처리장치 및 에칭처리방법
JP5411215B2 (ja) プラズマ処理装置
JP2013222910A (ja) プラズマ処理方法およびプラズマ処理装置
JP4782585B2 (ja) プラズマエッチング装置及び方法
JP6453421B2 (ja) データ処理方法、データ処理装置および処理装置
KR20150066447A (ko) 거리를 구하는 방법, 정전 척을 제전하는 방법, 및, 처리 장치
CN114521287A (zh) 等离子处理装置以及等离子处理方法
JP4943716B2 (ja) プラズマ処理装置
JP2001007084A (ja) エッチング終点判定方法
JP6914318B2 (ja) プラズマ処理装置、データ処理装置およびデータ処理方法
JP6820902B2 (ja) プラズマ処理装置、データ処理装置およびデータ処理方法
JP4324545B2 (ja) エッチング処理装置及び処理方法
JPH11149994A (ja) プラズマ処理方法
US20050115924A1 (en) Integration function of RF signal to analyze steady state and non-steady state ( initializaion) of plasmas

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20161207

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20161207

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20161213

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20161207

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20170117

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20170124

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20170803

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20170804

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20170825

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20171003

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20171027

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20180306

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20180402

R150 Certificate of patent or registration of utility model

Ref document number: 6318007

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350