JP6311003B2 - マルチチップモジュール(mcm)及びそれを作製するための方法並びにシステム - Google Patents
マルチチップモジュール(mcm)及びそれを作製するための方法並びにシステム Download PDFInfo
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- JP6311003B2 JP6311003B2 JP2016500312A JP2016500312A JP6311003B2 JP 6311003 B2 JP6311003 B2 JP 6311003B2 JP 2016500312 A JP2016500312 A JP 2016500312A JP 2016500312 A JP2016500312 A JP 2016500312A JP 6311003 B2 JP6311003 B2 JP 6311003B2
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Description
分野
本開示は、概して、マルチチップモジュール(multi-chip module:MCM)と、MCMを作製するための技術とに関する。より特定的には、本開示は、親水性層および疎水性層を用いることによって基板におけるネガ型特徴に自己埋込みされる(self-populated)ポジ型特徴を含むMCMに関する。
技術者らは、近年、3次元(3D:3-dimensional)の半導体チップ積層体を組込むためにマルチチップモジュール(MCM)を用いることを提案してきた。このようなMCMに伴う主要な難題として、チップ同士を互いにアラインさせる点が挙げられる。
本開示の一実施形態は、第1の表面を有する第1の基板を含むマルチチップモジュール(MCM)を提供する。第1の基板は、第1の表面上に配置された第1のネガ型特徴を含む。所与の第1のネガ型特徴は、第1の表面よりも下方に窪んでおり、第1の端縁によって規定された第1の開口部を有する。第1の基板はさらに、第1のネガ型特徴に配置され、親水性材料を含む第1の層を含む。さらに、MCMは、第1のネガ型特徴における第1の層上に配置され、第1の表面よりも上に突き出ているポジ型特徴と、第1の表面に面する第2の表面を有する第2の基板とを含む。第2の基板は、第2の表面上に配置された第2のネガ型特徴を含む。なお、所与の第2のネガ型特徴が第2の表面よりも下方に窪んでおり、第2の端縁によって規定された第2の開口部を有することに留意されたい。さらに、第2のネガ型特徴は、第1の基板が第2の基板に機械的に結合されるように、ポジ型特徴に結合される。
さらに、第1の基板は、第1のネガ型特徴を囲む第1の表面の領域に配置された第2の層を含み得る。第2の層は疎水性材料を含む。たとえば、第2の層はシリコーンを含み得る。この第2の層は、1nm未満の厚さを有してもよい。
別の実施形態は、MCMを作製するための方法を提供する。この方法においては、第1のネガ型特徴が第1の基板の第1の表面上に規定される。所与の第1のネガ型特徴は、第1の表面よりも下方に窪んでおり、第1の端縁によって規定された第1の開口部を有する。次いで、第1の層が第1のネガ型特徴に配置される。第1の層は親水性材料を含む。次いで、第2の層が、第1のネガ型特徴を囲む第1の表面の領域における第1の表面上に配置される。第2の層は疎水性材料を含む。さらに、ポジ型特徴は第1のネガ型特徴における第1の層上に配置される。ポジ型特徴は第1の表面よりも上に突き出ている。さらに、第2のネガ型特徴は、第2の基板のうち第1の表面に面する第2の表面上において規定される。所与の第2のネガ型特徴は第2の表面よりも下方に窪んでおり、第2の端縁によって規定された第2の開口部を有する。加えて、第2のネガ型特徴は、第1の基板が第2の基板に機械的に結合されるように、ポジ型特徴に機械的に結合される。
マルチチップモジュール(MCM)、MCMを含むシステム、およびMCMを作製するための技術についての実施形態を説明する。このMCMは少なくとも2つの基板を含む。少なくとも2つの基板は、当該基板の対向面上におけるポジ型特徴およびネガ型特徴によって機械的に結合され、アラインされる。これらのポジ型特徴およびネガ型特徴は、互いに接合し、互いに自己ロックし得る。ポジ型特徴は、ネガ型特徴における親水性層を用いて、基板のうち少なくとも1つの基板上のネガ型特徴に自己埋込みされてもよい。この親水性層は、基板のうち少なくとも1つの基板の上面上におけるネガ型特徴を囲む疎水性層とともに用いられてもよい。
Claims (12)
- マルチチップモジュール(MCM)であって、
第1の表面を有する第1の基板を備え、前記第1の基板は、
前記第1の表面上に配置された第1のネガ型特徴を含み、所与の第1のネガ型特徴は、前記第1の表面よりも下方に窪んでいるとともに、第1の端縁によって規定された第1の開口部を有し、
前記第1のネガ型特徴に配置された第1の層を含み、前記第1の層は親水性材料を含み、
前記第1のネガ型特徴を囲む前記第1の表面のある領域に配置された第2の層を含み、前記第2の層は疎水性材料を含み、
前記第1のネガ型特徴における前記第1の層上に配置されたポジ型特徴を備え、前記ポジ型特徴は、前記第1の表面よりも上に突き出ており、
前記第1の表面に面する第2の表面を有する第2の基板を備え、前記第2の基板は、第2の表面上に配置された第2のネガ型特徴を含み、所与の第2のネガ型特徴は、第2の表面よりも下方に窪んでいるとともに、第2の端縁によって規定された第2の開口部を有し、
前記第2のネガ型特徴は、前記第1の基板が前記第2の基板に機械的に結合されるように、前記ポジ型特徴に結合される、MCM。 - 前記ポジ型特徴は、丸い球状体を含む、請求項1に記載のMCM。
- 前記第1のネガ型特徴および前記第2のネガ型特徴は、ピットを含む、請求項1または2に記載のMCM。
- 前記第2の層は、1nm未満の厚さを有する、請求項1に記載のMCM。
- 前記第2の層は、シリコーンを含む、請求項1から4のいずれか1項に記載のMCM。
- マルチチップモジュール(MCM)であって、
第1の表面を有する第1の基板を備え、前記第1の基板は、
前記第1の表面上に配置された第1のネガ型特徴を含み、所与の第1のネガ型特徴は、前記第1の表面よりも下方に窪んでいるとともに、第1の端縁によって規定された第1の開口部を有し、
前記第1のネガ型特徴に配置された第1の層を含み、前記第1の層は親水性材料を含み、
前記第1のネガ型特徴における前記第1の層上に配置されたポジ型特徴を備え、前記ポジ型特徴は、前記第1の表面よりも上に突き出ており、
前記第1の表面に面する第2の表面を有する第2の基板を備え、前記第2の基板は、第2の表面上に配置された第2のネガ型特徴を含み、所与の第2のネガ型特徴は、第2の表面よりも下方に窪んでいるとともに、第2の端縁によって規定された第2の開口部を有し、
前記第2のネガ型特徴は、前記第1の基板が前記第2の基板に機械的に結合されるように、前記ポジ型特徴に結合され、前記第1の層は、二酸化ケイ素を含む、MCM。 - 前記第1の基板は、半導体を含むとともに、側壁角を有し、
前記第1の基板の前記側壁角は、前記半導体の対称面に対応する、請求項1〜6のいずれか1項に記載のMCM。 - システムであって、
プロセッサと、
前記プロセッサによって実行されるように構成されたプログラムモジュールを格納するメモリと、
MCMとを備え、前記MCMは、
第1の表面を有する第1の基板を含み、前記第1の基板は、
前記第1の表面上に配置された第1のネガ型特徴を含み、所与の第1のネガ型特徴は、前記第1の表面よりも下方に窪んでおり、第1の端縁によって規定された第1の開口部を有し、
前記第1のネガ型特徴に配置された第1の層を含み、前記第1の層は親水性材料を含み、
前記第1のネガ型特徴を囲む前記第1の表面のある領域に配置された第2の層を含み、前記第2の層は疎水性材料を含み、
前記第1のネガ型特徴における前記第1の層上に配置されたポジ型特徴を備え、前記ポジ型特徴は、前記第1の表面よりも上に突き出ており、
前記第1の表面に面する第2の表面を有する第2の基板を含み、前記第2の基板は、第2の表面上に配置された第2のネガ型特徴を含み、所与の第2のネガ型特徴は、第2の表面よりも下方に窪んでいるとともに、第2の端縁によって規定された第2の開口部を有し、
前記第2のネガ型特徴は、前記第1の基板が前記第2の基板に機械的に結合されるように、前記ポジ型特徴に結合される、システム。 - MCMを作製するための方法であって、
第1の基板の第1の表面上に第1のネガ型特徴を規定するステップを備え、所与の第1のネガ型特徴は、前記第1の表面よりも下方に窪んでいるとともに、第1の端縁によって規定された第1の開口部を有し、
前記第1のネガ型特徴に第1の層を配置するステップを備え、前記第1の層は親水性材料を含み、
第1のネガ型特徴を囲む第1の表面のある領域に第2の層を配置するステップを備え、前記第1の層は疎水性材料を含み、
第1のネガ型特徴における前記第1の層上にポジ型特徴を配置するステップを備え、前記ポジ型特徴は、前記第1の表面よりも上に突き出ており、
第2の基板の前記第1の表面に面する第2の表面上に第2のネガ型特徴を規定するステップを備え、所与の第2のネガ型特徴は、前記第2の表面よりも下方に窪んでいるとともに、第2の端縁によって規定された第2の開口部を有し、
前記第1の基板が前記第2の基板に機械的に結合されるように、前記第2のネガ型特徴を機械的に前記ポジ型特徴に結合するステップを含む、方法。 - 前記第2のネガ型特徴を機械的に前記ポジ型特徴に結合する前に、前記方法は、前記第1の基板をウエハから水圧で割断するステップをさらに備える、請求項9に記載の方法。
- 前記第2のネガ型特徴を機械的に前記ポジ型特徴に結合する前に、前記方法は、前記第2の層を除去するステップをさらに備える、請求項9または10に記載の方法。
- 前記ポジ型特徴は丸い球状体を含み、前記第1のネガ型特徴および前記第2のネガ型特徴はピットを含む、請求項9〜11のいずれか1項に記載の方法。
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