JP6302700B2 - 基板処理装置及び基板処理方法 - Google Patents

基板処理装置及び基板処理方法 Download PDF

Info

Publication number
JP6302700B2
JP6302700B2 JP2014029000A JP2014029000A JP6302700B2 JP 6302700 B2 JP6302700 B2 JP 6302700B2 JP 2014029000 A JP2014029000 A JP 2014029000A JP 2014029000 A JP2014029000 A JP 2014029000A JP 6302700 B2 JP6302700 B2 JP 6302700B2
Authority
JP
Japan
Prior art keywords
substrate
drying
volatile solvent
liquid
unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2014029000A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014207438A (ja
JP2014207438A5 (https=
Inventor
林　航之介
航之介 林
古矢　正明
正明 古矢
崇 大田垣
崇 大田垣
裕次 長嶋
裕次 長嶋
淳 木名瀬
淳 木名瀬
正泰 安部
正泰 安部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shibaura Mechatronics Corp
Original Assignee
Shibaura Mechatronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shibaura Mechatronics Corp filed Critical Shibaura Mechatronics Corp
Priority to JP2014029000A priority Critical patent/JP6302700B2/ja
Priority to US14/212,218 priority patent/US9607865B2/en
Priority to KR1020140031020A priority patent/KR101634428B1/ko
Priority to EP14160175.7A priority patent/EP2782128B1/en
Priority to TW103109915A priority patent/TWI597769B/zh
Priority to CN201410100514.4A priority patent/CN104064495B/zh
Publication of JP2014207438A publication Critical patent/JP2014207438A/ja
Publication of JP2014207438A5 publication Critical patent/JP2014207438A5/ja
Application granted granted Critical
Publication of JP6302700B2 publication Critical patent/JP6302700B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3314—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Solid Materials (AREA)
  • Cleaning By Liquid Or Steam (AREA)
JP2014029000A 2013-03-18 2014-02-18 基板処理装置及び基板処理方法 Active JP6302700B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2014029000A JP6302700B2 (ja) 2013-03-18 2014-02-18 基板処理装置及び基板処理方法
US14/212,218 US9607865B2 (en) 2013-03-18 2014-03-14 Substrate processing device and substrate processing method
EP14160175.7A EP2782128B1 (en) 2013-03-18 2014-03-17 Substrate processing device and substrate processing method
TW103109915A TWI597769B (zh) 2013-03-18 2014-03-17 基板處理裝置及基板處理方法
KR1020140031020A KR101634428B1 (ko) 2013-03-18 2014-03-17 기판 처리 장치 및 기판 처리 방법
CN201410100514.4A CN104064495B (zh) 2013-03-18 2014-03-18 基板处理装置和基板处理方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013054567 2013-03-18
JP2013054567 2013-03-18
JP2014029000A JP6302700B2 (ja) 2013-03-18 2014-02-18 基板処理装置及び基板処理方法

Publications (3)

Publication Number Publication Date
JP2014207438A JP2014207438A (ja) 2014-10-30
JP2014207438A5 JP2014207438A5 (https=) 2017-11-30
JP6302700B2 true JP6302700B2 (ja) 2018-03-28

Family

ID=50731902

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014029000A Active JP6302700B2 (ja) 2013-03-18 2014-02-18 基板処理装置及び基板処理方法

Country Status (6)

Country Link
US (1) US9607865B2 (https=)
EP (1) EP2782128B1 (https=)
JP (1) JP6302700B2 (https=)
KR (1) KR101634428B1 (https=)
CN (1) CN104064495B (https=)
TW (1) TWI597769B (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6849368B2 (ja) * 2016-09-30 2021-03-24 芝浦メカトロニクス株式会社 基板処理装置

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6292325A (ja) 1985-10-17 1987-04-27 Nec Corp ウエハ−乾燥装置
JPH09148297A (ja) * 1995-11-24 1997-06-06 Hitachi Ltd 基板の乾燥方法およびこれを用いる乾燥装置およびこれを用いる半導体装置の製造方法
JP3171807B2 (ja) 1997-01-24 2001-06-04 東京エレクトロン株式会社 洗浄装置及び洗浄方法
JP3330300B2 (ja) 1997-02-28 2002-09-30 東京エレクトロン株式会社 基板洗浄装置
KR100271764B1 (ko) 1997-12-24 2000-12-01 윤종용 반도체장치 제조용 현상 장치 및 그의 제어방법
JPH11340187A (ja) 1998-05-28 1999-12-10 Matsushita Electric Ind Co Ltd 洗浄乾燥装置および洗浄乾燥方法
JPH11354487A (ja) 1998-06-03 1999-12-24 Dainippon Screen Mfg Co Ltd 基板乾燥装置および基板乾燥方法
EP1054457B1 (en) * 1999-05-20 2010-08-04 Kaneka Corporation Method and apparatus for manufacturing a semiconductor device
DE10030431A1 (de) 2000-06-21 2002-01-10 Karl Suess Kg Praez Sgeraete F Verfahren und Vorrichtung zum Reinigen und/oder Bonden von Substraten
US6808566B2 (en) * 2001-09-19 2004-10-26 Tokyo Electron Limited Reduced-pressure drying unit and coating film forming method
JP4056858B2 (ja) * 2001-11-12 2008-03-05 東京エレクトロン株式会社 基板処理装置
US6843855B2 (en) * 2002-03-12 2005-01-18 Applied Materials, Inc. Methods for drying wafer
JP2004259734A (ja) 2003-02-24 2004-09-16 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
TW200633033A (en) 2004-08-23 2006-09-16 Koninkl Philips Electronics Nv Hot source cleaning system
US7642205B2 (en) 2005-04-08 2010-01-05 Mattson Technology, Inc. Rapid thermal processing using energy transfer layers
KR100696378B1 (ko) 2005-04-13 2007-03-19 삼성전자주식회사 반도체 기판을 세정하는 장치 및 방법
JP2008034779A (ja) 2006-06-27 2008-02-14 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
JP5043406B2 (ja) * 2006-11-21 2012-10-10 大日本スクリーン製造株式会社 基板乾燥方法および基板乾燥装置
WO2008105467A1 (ja) * 2007-02-27 2008-09-04 Kabushiki Kaisha Toshiba 塗布装置、塗布体の製造方法及び流体吹出装置
JP2009076856A (ja) * 2007-08-28 2009-04-09 Dainippon Screen Mfg Co Ltd 基板処理装置
DE102007058002B4 (de) 2007-12-03 2016-03-17 Mattson Thermal Products Gmbh Vorrichtung zum thermischen Behandeln von scheibenförmigen Halbleitersubstraten
JP5413016B2 (ja) 2008-07-31 2014-02-12 東京エレクトロン株式会社 基板の洗浄方法、基板の洗浄装置及び記憶媒体
JP5234985B2 (ja) * 2009-03-31 2013-07-10 大日本スクリーン製造株式会社 基板処理装置及び基板処理方法
JP5140641B2 (ja) * 2009-06-29 2013-02-06 株式会社荏原製作所 基板処理方法及び基板処理装置
JP5146522B2 (ja) * 2010-11-26 2013-02-20 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP5254308B2 (ja) 2010-12-27 2013-08-07 東京エレクトロン株式会社 液処理装置、液処理方法及びその液処理方法を実行させるためのプログラムを記録した記録媒体
US20120260517A1 (en) 2011-04-18 2012-10-18 Lam Research Corporation Apparatus and Method for Reducing Substrate Pattern Collapse During Drying Operations
WO2012165377A1 (ja) * 2011-05-30 2012-12-06 東京エレクトロン株式会社 基板処理方法、基板処理装置および記憶媒体
JP2012250230A (ja) * 2011-06-02 2012-12-20 Tokyo Ohka Kogyo Co Ltd 加熱装置、塗布装置及び加熱方法
JP5686261B2 (ja) 2011-07-29 2015-03-18 セメス株式会社ＳＥＭＥＳ ＣＯ．， Ｌｔｄ 基板処理装置及び基板処理方法
KR101329304B1 (ko) 2011-07-29 2013-11-14 세메스 주식회사 기판처리장치 및 기판처리방법
JP6000822B2 (ja) 2012-11-26 2016-10-05 東京エレクトロン株式会社 基板洗浄方法および基板洗浄システム

Also Published As

Publication number Publication date
CN104064495A (zh) 2014-09-24
US9607865B2 (en) 2017-03-28
EP2782128A3 (en) 2014-10-22
JP2014207438A (ja) 2014-10-30
US20140261549A1 (en) 2014-09-18
KR101634428B1 (ko) 2016-06-28
EP2782128A2 (en) 2014-09-24
TW201447997A (zh) 2014-12-16
EP2782128B1 (en) 2017-01-11
CN104064495B (zh) 2017-09-08
KR20140114301A (ko) 2014-09-26
TWI597769B (zh) 2017-09-01

Similar Documents

Publication Publication Date Title
JP6351993B2 (ja) 基板処理装置及び基板処理方法
JP6455962B2 (ja) 基板処理装置及び基板処理方法
JP6400919B2 (ja) 基板処理装置及び基板処理方法
JP6426927B2 (ja) 基板処理装置及び基板処理方法
KR101624038B1 (ko) 기판 처리 장치 및 기판 처리 방법
JP2015092539A (ja) 基板処理装置及び基板処理方法
JP6276924B2 (ja) 基板処理装置
JP6302700B2 (ja) 基板処理装置及び基板処理方法
JP6585243B2 (ja) 基板処理装置及び基板処理方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170214

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20170214

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20171018

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20180129

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20180213

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20180305

R150 Certificate of patent or registration of utility model

Ref document number: 6302700

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150