JP6300713B2 - 半導体デバイス内のトラップの寿命を解析する方法および装置 - Google Patents

半導体デバイス内のトラップの寿命を解析する方法および装置 Download PDF

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JP6300713B2
JP6300713B2 JP2014249647A JP2014249647A JP6300713B2 JP 6300713 B2 JP6300713 B2 JP 6300713B2 JP 2014249647 A JP2014249647 A JP 2014249647A JP 2014249647 A JP2014249647 A JP 2014249647A JP 6300713 B2 JP6300713 B2 JP 6300713B2
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lifetime
signal
semiconductor device
exponential
over time
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JP2015130494A (ja
JP2015130494A5 (https=
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アンドレイ・ニアゼフ
クン・ガオ
クーン・フー・テオ
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2642—Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2894—Aspects of quality control [QC]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/207—Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Manufacturing & Machinery (AREA)
JP2014249647A 2014-01-07 2014-12-10 半導体デバイス内のトラップの寿命を解析する方法および装置 Active JP6300713B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/149,345 US9691861B2 (en) 2014-01-07 2014-01-07 Method for analyzing discrete traps in semiconductor devices
US14/149,345 2014-01-07

Publications (3)

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JP2015130494A JP2015130494A (ja) 2015-07-16
JP2015130494A5 JP2015130494A5 (https=) 2017-09-14
JP6300713B2 true JP6300713B2 (ja) 2018-03-28

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US (1) US9691861B2 (https=)
JP (1) JP6300713B2 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7108386B2 (ja) * 2017-08-24 2022-07-28 住友化学株式会社 電荷トラップ評価方法
CN109596961B (zh) * 2018-10-23 2021-10-15 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） GaN器件的可靠性测试方法、装置和系统
CN114585867B (zh) 2019-10-15 2023-08-15 住友重机械工业株式会社 超低温制冷机、超低温制冷机的诊断装置及诊断方法
JP7368248B2 (ja) * 2020-01-24 2023-10-24 武漢天馬微電子有限公司 トランジスタの特性のシミュレーション方法、トランジスタを含む電子回路の特性のシミュレーション方法、および、トランジスタの特性のシミュレーションプログラム
CN115469201A (zh) * 2021-05-24 2022-12-13 中兴通讯股份有限公司 半导体材料特性表征测试方法及其系统
CN116047252B (zh) * 2023-01-03 2025-09-26 北京工业大学 一种异质半导体器件陷阱参数的精确测量方法
CN120068443B (zh) * 2025-02-25 2025-10-21 南京理工大学 低复杂度微波器件气体击穿阈值瞬态高效预测方法及系统

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02135452A (ja) * 1988-11-17 1990-05-24 Fuji Xerox Co Ltd 電子写真感光体の感光層におけるキャリア寿命測定方法及びその装置
AU2003296113A1 (en) * 2002-12-26 2004-07-22 Nippon Telegraph And Telephone Corporation Wave transmission medium and waveguide circuit
GB2404103B (en) * 2003-07-15 2005-06-29 Toshiba Res Europ Ltd A quantum communication system
US7592876B2 (en) * 2005-12-08 2009-09-22 Intel Corporation Leakage oscillator based aging monitor
US8521443B2 (en) * 2008-10-16 2013-08-27 Oxfordian Method to extract parameters from in-situ monitored signals for prognostics
US8615034B2 (en) * 2008-10-19 2013-12-24 Agilent Technologies, Inc. Method for analyzing random telegraph signal and threshold level determination method therefor
JP4858527B2 (ja) * 2008-11-10 2012-01-18 トヨタ自動車株式会社 半導体装置の製造方法
CN102353882B (zh) * 2011-06-09 2014-02-19 北京大学 一种半导体器件的栅介质层陷阱密度和位置的测试方法
US9329223B2 (en) * 2011-06-30 2016-05-03 The Curators Of The University Of Missouri Deep level transient spectrometer
US8817807B2 (en) * 2012-06-11 2014-08-26 Cisco Technology, Inc. System and method for distributed resource control of switches in a network environment

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JP2015130494A (ja) 2015-07-16
US20150192635A1 (en) 2015-07-09
US9691861B2 (en) 2017-06-27

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