JP2015130494A5 - - Google Patents
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- JP2015130494A5 JP2015130494A5 JP2014249647A JP2014249647A JP2015130494A5 JP 2015130494 A5 JP2015130494 A5 JP 2015130494A5 JP 2014249647 A JP2014249647 A JP 2014249647A JP 2014249647 A JP2014249647 A JP 2014249647A JP 2015130494 A5 JP2015130494 A5 JP 2015130494A5
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- semiconductor device
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- 238000000034 method Methods 0.000 claims 36
- 239000004065 semiconductor Substances 0.000 claims 26
- 238000004519 manufacturing process Methods 0.000 claims 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 1
- 238000001914 filtration Methods 0.000 claims 1
- 239000011159 matrix material Substances 0.000 claims 1
- 238000005259 measurement Methods 0.000 claims 1
- 238000003908 quality control method Methods 0.000 claims 1
- 238000001228 spectrum Methods 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/149,345 US9691861B2 (en) | 2014-01-07 | 2014-01-07 | Method for analyzing discrete traps in semiconductor devices |
| US14/149,345 | 2014-01-07 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015130494A JP2015130494A (ja) | 2015-07-16 |
| JP2015130494A5 true JP2015130494A5 (https=) | 2017-09-14 |
| JP6300713B2 JP6300713B2 (ja) | 2018-03-28 |
Family
ID=53494978
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014249647A Active JP6300713B2 (ja) | 2014-01-07 | 2014-12-10 | 半導体デバイス内のトラップの寿命を解析する方法および装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US9691861B2 (https=) |
| JP (1) | JP6300713B2 (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7108386B2 (ja) * | 2017-08-24 | 2022-07-28 | 住友化学株式会社 | 電荷トラップ評価方法 |
| CN109596961B (zh) * | 2018-10-23 | 2021-10-15 | 中国电子产品可靠性与环境试验研究所((工业和信息化部电子第五研究所)(中国赛宝实验室)) | GaN器件的可靠性测试方法、装置和系统 |
| CN114585867B (zh) | 2019-10-15 | 2023-08-15 | 住友重机械工业株式会社 | 超低温制冷机、超低温制冷机的诊断装置及诊断方法 |
| JP7368248B2 (ja) * | 2020-01-24 | 2023-10-24 | 武漢天馬微電子有限公司 | トランジスタの特性のシミュレーション方法、トランジスタを含む電子回路の特性のシミュレーション方法、および、トランジスタの特性のシミュレーションプログラム |
| CN115469201A (zh) * | 2021-05-24 | 2022-12-13 | 中兴通讯股份有限公司 | 半导体材料特性表征测试方法及其系统 |
| CN116047252B (zh) * | 2023-01-03 | 2025-09-26 | 北京工业大学 | 一种异质半导体器件陷阱参数的精确测量方法 |
| CN120068443B (zh) * | 2025-02-25 | 2025-10-21 | 南京理工大学 | 低复杂度微波器件气体击穿阈值瞬态高效预测方法及系统 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02135452A (ja) * | 1988-11-17 | 1990-05-24 | Fuji Xerox Co Ltd | 電子写真感光体の感光層におけるキャリア寿命測定方法及びその装置 |
| AU2003296113A1 (en) * | 2002-12-26 | 2004-07-22 | Nippon Telegraph And Telephone Corporation | Wave transmission medium and waveguide circuit |
| GB2404103B (en) * | 2003-07-15 | 2005-06-29 | Toshiba Res Europ Ltd | A quantum communication system |
| US7592876B2 (en) * | 2005-12-08 | 2009-09-22 | Intel Corporation | Leakage oscillator based aging monitor |
| US8521443B2 (en) * | 2008-10-16 | 2013-08-27 | Oxfordian | Method to extract parameters from in-situ monitored signals for prognostics |
| US8615034B2 (en) * | 2008-10-19 | 2013-12-24 | Agilent Technologies, Inc. | Method for analyzing random telegraph signal and threshold level determination method therefor |
| JP4858527B2 (ja) * | 2008-11-10 | 2012-01-18 | トヨタ自動車株式会社 | 半導体装置の製造方法 |
| CN102353882B (zh) * | 2011-06-09 | 2014-02-19 | 北京大学 | 一种半导体器件的栅介质层陷阱密度和位置的测试方法 |
| US9329223B2 (en) * | 2011-06-30 | 2016-05-03 | The Curators Of The University Of Missouri | Deep level transient spectrometer |
| US8817807B2 (en) * | 2012-06-11 | 2014-08-26 | Cisco Technology, Inc. | System and method for distributed resource control of switches in a network environment |
-
2014
- 2014-01-07 US US14/149,345 patent/US9691861B2/en active Active
- 2014-12-10 JP JP2014249647A patent/JP6300713B2/ja active Active
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